CN105449642B - A kind of guard method of Boost circuit and circuit - Google Patents
A kind of guard method of Boost circuit and circuit Download PDFInfo
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- CN105449642B CN105449642B CN201511027746.2A CN201511027746A CN105449642B CN 105449642 B CN105449642 B CN 105449642B CN 201511027746 A CN201511027746 A CN 201511027746A CN 105449642 B CN105449642 B CN 105449642B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
- H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
- H02H7/1203—Circuits independent of the type of conversion
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- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
The invention discloses a kind of guard method of Boost circuit and circuit, including Boost circuit 1, on-off circuit 2, input voltage port, output voltage port, PWM drive signal.On-off circuit 2 is connected on the main loop of power circuit of Boost circuit 2.During normal work, on-off circuit 2 is in constantly on state, equivalent to one wire.When the abnormalities such as input overvoltage, input undervoltage, output overcurrent, output short-circuit occurs in Boost circuit, PWM drive signal stops output, and on-off circuit 2 automatically shuts down after delay a period of time, whole circuit is protected.After Boost circuit abnormal disappearance, switch can enter constantly on state again, and the normal work of whole circuit is not influenceed.Turning on and off by controlling switch circuit 2 of the invention, realizes the defencive function of Boost circuit, and control circuit is simple, and cost is low, and power density and reliability are high.
Description
Technical field
The present invention relates to Boost circuit, more particularly to Boost input overvoltage, input undervoltage, output overcurrent, output is short
Road guard method and circuit.
Background technology
With the progress of Power Electronic Technique, Switching Power Supply constantly develops to high power density, high efficiency, high reliability,
The defencive function of Switching Power Supply has become an important indicator of reliability, Boost circuit as Switching Power Supply one kind
Most basic topology, can be applied in non-isolated product, and power density and efficiency can be made very high.But Boost circuit
When realizing the protections such as input overvoltage, input undervoltage, output overcurrent, output short-circuit, there is inherent shortcoming in circuit.Fig. 1 is basic
Boost circuit, when Boost circuit occur input overvoltage, input undervoltage, output overcurrent, the unusual condition of output short-circuit when, lead
Control IC is detected after abnormal signal, PWM drive signal is turned off, main switch TR1 will be switched off.But it is due to depositing for diode D1
Under above-mentioned unusual condition, input voltage can be directly output to output end by diode D1, and now output voltage is approximately equal to
Input voltage, it is impossible to complete switch off.Fig. 2 is the Boost circuit that diode D1 is substituted with metal-oxide-semiconductor TR0, although the circuit can pass through
Two metal-oxide-semiconductors TR0, TR1 are turned off simultaneously, defencive function is realized.But in normal work, it is necessary to control two MOS simultaneously
Turn-on and turn-off, and sequential needs accurate control so that control becomes complicated, cost rise, reliability and power density
Reduction.Therefore existing Boost circuit realizes that defencive function is primarily present following shortcoming：
(1) using the switching tube of a metal-oxide-semiconductor and a diode as Boost circuit, will be unable to realize input overvoltage,
The defencive functions such as input undervoltage, output overcurrent, output short-circuit.
(2) while using switching tube of two metal-oxide-semiconductors as Boost circuit, control circuit is complicated, and cost is high, reliability
It is low with power density.
The content of the invention
Have in view of that, one of the technical problem to be solved in the present invention is：Overcome in the prior art that Boost circuit can not be low
Under the conditions of cost, high power density, high reliability, the protections such as input overvoltage, input undervoltage, output overcurrent, output short-circuit are realized
The defect of function is there is provided a kind of guard method of Boost circuit, and the guard method of described Boost circuit can both have been realized low
Cost, high power density, high reliability, can realize the protections such as input overvoltage, input undervoltage, output overcurrent, output short-circuit again
Function.
Corresponding to this, the second technical problem to be solved by the present invention is：A kind of protection circuit of Boost circuit is provided.
The present invention for solve one of above-mentioned technical problem there is provided technical scheme be：
A kind of guard method of Boost circuit：Connected on the main loop of power circuit of Boost an on-off circuit, described switch
Circuit is used for the output for controlling described Boost circuit；When described Boost circuit normal work, described on-off circuit
In constantly on state, equivalent to one wire does not influence the normal work of whole circuit；When described Boost circuit goes out
During the abnormalities such as now input overvoltage, input undervoltage, output overcurrent, output short-circuit, described on-off circuit delay a period of time
After automatically shut down, described Boost main power circuits will be cut off, and realize the protection to described Boost circuit；When described
After Boost circuit abnormal disappearance, described on-off circuit can enter constantly on state again, and the normal work of whole circuit is not influenceed
Make.
More preferably, the PWM for turning on and off the Boost circuit main switch described in being controlled by of described on-off circuit drives
Dynamic signal.
More preferably, described on-off circuit has the storage effect of short time to described PWM drive signal.
More preferably, the time of described storage effect can set.
The present invention for solve above-mentioned technical problem two there is provided technical scheme be：
A kind of protection circuit of Boost circuit：Including Boost circuit, on-off circuit；Described switching circuit in series is in institute
On the main loop of power circuit for the Boost circuit stated, the output of the described Boost circuit of control；When the described normal work of Boost circuit
When making, described on-off circuit is in constantly on state, and equivalent to one wire does not influence the normal work of whole circuit；
When the abnormalities such as input overvoltage, input undervoltage, output overcurrent, output short-circuit occurs in described Boost circuit, described opens
Close circuit delay to automatically shut down afterwards for a period of time, described Boost main power circuits will be cut off, and be realized to described Boost
The protection of circuit；After described Boost circuit abnormal disappearance, described on-off circuit can enter constantly on state again, no
Influence the normal work of whole circuit.
More preferably, the PWM for turning on and off the Boost circuit main switch described in being controlled by of described on-off circuit drives
Dynamic signal.
More preferably, described on-off circuit has the storage effect of short time to described PWM drive signal.
More preferably, the time of described storage effect can set.
It is preferred that, described Boost circuit includes：First inductance, the first diode, the first electric capacity, the first main switch,
Input positive terminal mouthful Vin, inputs reference ground GND, output plus terminal mouthful+Vo, output negative terminal mouthful-Vo；Described on-off circuit includes the
Two diodes, the second electric capacity, second switch pipe, first resistor；Input positive terminal described in one end connection of the first described inductance
Mouthful Vin, the first main switch described in the anode of the first described diode of the other end connection of the first described inductance and connection
The drain electrode of pipe；Input reference ground GND described in the source electrode connection of the first described main switch；The moon of the first described diode
Output plus terminal mouthful+Vo described in one end of the first described electric capacity of pole connection and connection；The other end of the first described electric capacity connects
Meet described output negative terminal mouthful-Vo；Output negative terminal mouthful-Vo described in the drain electrode connection of described second switch pipe, described the
Input reference ground GND described in the source electrode connection of two switching tubes；The grid connection PWM drive signal of the first described main switch
With the anode of the second diode described in connection；The grid of second switch pipe described in the negative electrode connection of the second described diode
Pole；The grid of second switch pipe described in one end connection of described first resistor, the other end of described first resistor is connected
Described input reference ground GND；The grid of second switch pipe described in one end connection of the second described electric capacity, described second
Input reference ground GND described in the other end connection of electric capacity.
It is preferred that, the second described capacitor equivalent is the parasitism electricity between the grid and source electrode of described second switch pipe
Hold.
It is preferred that, described Boost circuit includes：First inductance, the first diode, the first electric capacity, the first main switch,
Input positive terminal mouthful Vin, inputs reference ground GND, output plus terminal mouthful+Vo, output negative terminal mouthful-Vo；Described on-off circuit includes the
Two diodes, the second electric capacity, second switch pipe, first resistor；Input positive terminal described in one end connection of the first described inductance
Mouthful Vin, the first main switch described in the anode of the first described diode of the other end connection of the first described inductance and connection
The drain electrode of pipe；Output negative terminal mouthful-Vo described in the source electrode connection of the first described main switch；The moon of the first described diode
Output plus terminal mouthful+Vo described in one end of the first described electric capacity of pole connection and connection；The other end of the first described electric capacity connects
Meet described output negative terminal mouthful-Vo；Output negative terminal mouthful-Vo described in the drain electrode connection of described second switch pipe, described the
Input reference ground GND described in the source electrode connection of two switching tubes；The grid connection PWM drive signal of the first described main switch
With the anode of the second diode described in connection；The grid of second switch pipe described in the negative electrode connection of the second described diode
Pole；The grid of second switch pipe described in one end connection of described first resistor, the other end of described first resistor is connected
Described input reference ground GND；The grid of second switch pipe described in one end connection of the second described electric capacity, described second
Input reference ground GND described in the other end connection of electric capacity.
It is preferred that, the second described capacitor equivalent is the parasitism electricity between the grid and source electrode of described second switch pipe
Hold.
The present invention operation principle embodiment part will labor, will not be described here.
Compared with prior art, the present invention has the advantages that following prominent：
(1), can when the unusual conditions such as input overvoltage, input undervoltage, output overcurrent, output short-circuit occurs in Boost circuit
Realize quick, reliable protection.
(2) while the protection such as input overvoltage, input undervoltage, output overcurrent, output short-circuit of Boost circuit is realized,
Without extra increased control circuit, simple whole circuit control, low cost, power density and reliability can be achieved high.
Brief description of the drawings
Fig. 1 is the general principle figure of existing Boost circuit diode rectification scheme；
Fig. 2 is the general principle figure of existing Boost circuit metal-oxide-semiconductor rectification scheme；
Fig. 3 is theory diagram of the invention；
Fig. 4 is the circuit diagram of the embodiment of the present invention one；
Fig. 5 is the circuit diagram of the embodiment of the present invention two；
Oscillogram when Fig. 6 is the embodiment of the present invention one, two circuit normal work of embodiment；
Ripple when Fig. 7 is the embodiment of the present invention one, the abnormal conditions such as output overcurrent, output short-circuit occurs in the circuit of embodiment two
Shape figure.
Embodiment
The design of the technology of the present invention is an on-off circuit of being connected on Boost main power circuits, described on-off circuit
The PWM drive signal for being controlled by Boost circuit main switch is turned on and off, is occurred when main control IC detects Boost circuit
When inputting the unusual conditions such as overvoltage, input undervoltage, output overcurrent, output short-circuit, PWM drive signal stops output, on-off circuit
Automatically shut down after delay a period of time, whole circuit will be cut off completely, so as to be played a protective role to circuit abnormality state.
While realizing the protection such as input overvoltage, input undervoltage, output overcurrent, output short-circuit of Boost circuit, without extra increased
Circuit is controlled, simple whole circuit control, low cost, power density and reliability can be achieved high.
In order to be better understood from technical scheme, the present invention is entered below in conjunction with the drawings and specific embodiments
One step is described in detail.
Further illustrated with reference to circuit is implemented.
Embodiment one
Fig. 4 is the circuit diagram of the embodiment of the present invention one, and it includes：Boost circuit 1, on-off circuit 2.On-off circuit 1 is connected
On the main loop of power circuit of Boost circuit 2；Boost circuit 1 includes the first inductance L1, the first diode D1, the first electric capacity C1,
First main switch TR1, input positive terminal mouth Vin, input reference ground GND, output plus terminal mouthful+Vo, output negative terminal mouthful-Vo, PWM drive
Dynamic signal；On-off circuit 2 includes the second diode D2, the second electric capacity C2, second switch pipe TR2, first resistor R1；First inductance
L1 one end connection input positive terminal mouthful Vin, the first inductance L1 other end connect the first diode D1 anode and connection first
Main switch TR1 drain electrode；First main switch TR1 source electrode connection input reference ground GND；First diode D1 negative electrode connects
Meet the first electric capacity C1 one end and connection output plus terminal mouthful+Vo；First electric capacity C1 other end connection output negative terminal mouthful-Vo；The
Two switch transistor T R2 drain electrode connection output negative terminal mouthful-Vo, second switch pipe TR2 source electrode connection input reference ground GND；First
Main switch TR1 the second diode D2 of grid connection PWM drive signal and connection anode；Second diode D2 negative electrode connects
Connect second switch pipe TR2 grid；First resistor R1 one end connection second switch pipe TR2 grid, first resistor R1's is another
One end connection input reference ground GND；Second electric capacity C2 one end connection second switch pipe TR2 grid, the second electric capacity C2's is another
One end connection input reference ground GND；Second electric capacity C2 can also be equivalent to the parasitism between second switch pipe TR2 grid and source electrode
Electric capacity.
Its operation principle is as follows：
Normal work, when PWM drive signal exports high level, while two switch transistor T R1, TR2 drivings are turned on, when
When PWM drive signal exports low level, main switch TR1 drive level will be pulled low immediately, complete normal switch motion,
Switch transistor T R2 is acted on due to diode D2 unilateal conduction, and its drive level can not be directly pulled low, can only be slow by resistance R1
On The Drug Release, the time (storage effect i.e. described in claims) of electric discharge is determined by electric capacity C2 and resistance R1, is discharged when this
When time is set as the multiple switch cycle, because each cycle electric capacity C2 can be again filled with by PWM drive signal, final electric capacity
C2 voltage will be maintained on a high level, switch transistor T R2 will be in constantly on state, equivalent to one wire, because
This on-off circuit added almost has no effect to normal operating conditions.Switch transistor T R2 does not have switching loss during normal work
And drive loss, pressure voltage is also very low, and available metal-oxide-semiconductor turns on internal resistance very little, can almost be equal to the internal resistance of wire, typically may be used
To choose the metal-oxide-semiconductor of volume very little, the power density of whole product is had little influence on.
When the unusual conditions such as input overvoltage, input undervoltage, output overcurrent, output short-circuit occurs in product, control IC will stop
Only output PWM drive signal or interval a very long time export one section of pwm signal, then main switch TR1 will stop immediately
Only work, and the electric capacity C2 between switch transistor T R2 grids and source electrode is discharged by resistance R1, postpones switching tube after several switch periods
TR2 will also be complete switched off, and whole circuit is complete switched off, and play the protective effect of unusual condition.This protection to Boost circuit
Scheme can replicate all defencive functions having with Synchronization Control IC completely.
After abnormality disappearance, PWM drive signal is normally exported, and product can recover normal working condition immediately.
Embodiment two
Fig. 5 is the circuit diagram of the embodiment of the present invention two, and it includes：Boost circuit 1, on-off circuit 2.On-off circuit 1 is connected
On the main loop of power circuit of Boost circuit 2；Boost circuit 1 includes the first inductance L1, the first diode D1, the first electric capacity C1,
First main switch TR1, input positive terminal mouth Vin, input reference ground GND, output plus terminal mouthful+Vo, output negative terminal mouthful-Vo, PWM drive
Dynamic signal；On-off circuit 2 includes the second diode D2, the second electric capacity C2, second switch pipe TR2, first resistor R1；First inductance
L1 one end connection input positive terminal mouthful Vin, the first inductance L1 other end connect the first diode D1 anode and connection first
Main switch TR1 drain electrode；First main switch TR1 source electrode connection output negative terminal mouthful-Vo；First diode D1 negative electrode connects
Meet the first electric capacity C1 one end and connection output plus terminal mouthful+Vo；First electric capacity C1 other end connection output negative terminal mouthful-Vo；The
Two switch transistor T R2 drain electrode connection output negative terminal mouthful-Vo, second switch pipe TR2 source electrode connection input reference ground GND；First
Main switch TR1 the second diode D2 of grid connection PWM drive signal and connection anode；Second diode D2 negative electrode connects
Connect second switch pipe TR2 grid；First resistor R1 one end connection second switch pipe TR2 grid, first resistor R1's is another
One end connection input reference ground GND；Second electric capacity C2 one end connection second switch pipe TR2 grid, the second electric capacity C2's is another
One end connection input reference ground GND；Second electric capacity C2 can also be equivalent to the parasitism between second switch pipe TR2 grid and source electrode
Electric capacity.
Its operation principle and embodiment one are just the same, will not be repeated here.
The implementation of the present invention is not limited to this, according to the above of the present invention, is known using the ordinary skill of this area
Know and customary means, under the premise of above-mentioned basic fundamental thought of the invention is not departed from, the present invention can also make other a variety of shapes
Modification, replacement or the change of formula, all fall within rights protection scope of the present invention.
Claims (10)
1. a kind of guard method of Boost circuit, an on-off circuit of being connected on the main loop of power circuit of Boost, described switch electricity
Road is used for the output for controlling described Boost circuit；When described Boost circuit normal work, at described on-off circuit
In constantly on state, equivalent to one wire does not influence the normal work of whole circuit；When described Boost circuit occurs
When inputting the abnormalities such as overvoltage, input undervoltage, output overcurrent, output short-circuit, described on-off circuit postponed after a period of time
Automatically shut down, described Boost main power circuits will be cut off, and realize the protection to described Boost circuit；When described
After Boost circuit abnormal disappearance, described on-off circuit can enter constantly on state again, and the normal work of whole circuit is not influenceed
Make；It is characterized in that：The PWM for turning on and off the Boost circuit main switch described in being controlled by of described on-off circuit drives
Dynamic signal.
2. according to the method described in claim 1, it is characterised in that：Described on-off circuit has to described PWM drive signal
There is the storage effect of short time.
3. method according to claim 2, it is characterised in that：The time of described storage effect can set.
4. a kind of protection circuit of Boost circuit, including Boost circuit, on-off circuit；Described switching circuit in series is described
Boost circuit main loop of power circuit on, the output of the described Boost circuit of control；When described Boost circuit normal work
When, described on-off circuit is in constantly on state, and equivalent to one wire does not influence the normal work of whole circuit；When
When there are the abnormalities such as input overvoltage, input undervoltage, output overcurrent, output short-circuit in described Boost circuit, described switch
Circuit delay is automatically shut down afterwards for a period of time, and described Boost main power circuits will be cut off, and is realized to described Boost electricity
The protection on road；After described Boost circuit abnormal disappearance, described on-off circuit can enter constantly on state again, not shadow
Ring the normal work of whole circuit；It is characterized in that：Turning on and off for described on-off circuit is controlled by described Boost electricity
The PWM drive signal of road main switch.
5. circuit according to claim 4, it is characterised in that：Described on-off circuit has to described PWM drive signal
There is the storage effect of short time.
6. circuit according to claim 5, it is characterised in that：The time of described storage effect can set.
7. circuit according to claim 4, it is characterised in that：Described Boost circuit includes：First inductance, the one or two
Pole pipe, the first electric capacity, the first main switch, input positive terminal mouthful Vin inputs reference ground GND, output plus terminal mouthful+Vo, exports negative terminal
Mouth-Vo；Described on-off circuit includes the second diode, the second electric capacity, second switch pipe, first resistor；The first described electricity
Input positive terminal mouthful Vin described in one end connection of sense, the other end of the first described inductance connects the first described diode
The drain electrode of the first main switch described in anode and connection；The input that the source electrode connection of the first described main switch is described is referred to
Ground GND；Output plus terminal mouthful described in one end of the first described electric capacity of the negative electrode connection of the first described diode and connection+
Vo；Output negative terminal mouthful-Vo described in the other end connection of the first described electric capacity；The drain electrode connection institute of described second switch pipe
The output negative terminal mouthful-Vo stated, the source electrode of described second switch pipe connects described input reference ground GND；The first described master
The anode of the second diode described in the grid connection PWM drive signal of switching tube and connection；The moon of the second described diode
The grid of the described second switch pipe of pole connection；The grid of second switch pipe described in one end connection of described first resistor,
Input reference ground GND described in the other end connection of described first resistor；Described in one end connection of the second described electric capacity
The grid of second switch pipe, the other end of the second described electric capacity connects described input reference ground GND.
8. circuit according to claim 7, it is characterised in that：The second described capacitor equivalent is described second switch pipe
Grid and source electrode between parasitic capacitance.
9. circuit according to claim 4, it is characterised in that：Described Boost circuit includes：First inductance, the one or two
Pole pipe, the first electric capacity, the first main switch, input positive terminal mouthful Vin inputs reference ground GND, output plus terminal mouthful+Vo, exports negative terminal
Mouth-Vo；Described on-off circuit includes the second diode, the second electric capacity, second switch pipe, first resistor；The first described electricity
Input positive terminal mouthful Vin described in one end connection of sense, the other end of the first described inductance connects the first described diode
The drain electrode of the first main switch described in anode and connection；Output negative terminal described in the source electrode connection of the first described main switch
Mouth-Vo；Output plus terminal mouthful described in one end of the first described electric capacity of the negative electrode connection of the first described diode and connection+
Vo；Output negative terminal mouthful-Vo described in the other end connection of the first described electric capacity；The drain electrode connection institute of described second switch pipe
The output negative terminal mouthful-Vo stated, the source electrode of described second switch pipe connects described input reference ground GND；The first described master
The anode of the second diode described in the grid connection PWM drive signal of switching tube and connection；The moon of the second described diode
The grid of the described second switch pipe of pole connection；The grid of second switch pipe described in one end connection of described first resistor,
Input reference ground GND described in the other end connection of described first resistor；Described in one end connection of the second described electric capacity
The grid of second switch pipe, the other end of the second described electric capacity connects described input reference ground GND.
10. circuit according to claim 9, it is characterised in that：The second described capacitor equivalent is described second switch
Parasitic capacitance between the grid and source electrode of pipe.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511027746.2A CN105449642B (en) | 2015-12-30 | 2015-12-30 | A kind of guard method of Boost circuit and circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511027746.2A CN105449642B (en) | 2015-12-30 | 2015-12-30 | A kind of guard method of Boost circuit and circuit |
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| CN105449642A CN105449642A (en) | 2016-03-30 |
| CN105449642B true CN105449642B (en) | 2017-11-07 |
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| CN201511027746.2A Active CN105449642B (en) | 2015-12-30 | 2015-12-30 | A kind of guard method of Boost circuit and circuit |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105977919A (en) * | 2016-06-17 | 2016-09-28 | 山东超越数控电子有限公司 | Design method for short-circuit protection |
| CN107658853B (en) * | 2017-09-12 | 2019-03-15 | 嘉善中正新能源科技有限公司 | The current foldback circuit of BOOST cooperation PUSH-PULL cascade circuit |
| CN109390917B (en) * | 2018-12-19 | 2021-06-25 | 北京天诚同创电气有限公司 | Control method and device of DCDC power supply and DCDC power supply protection circuit |
| CN113178846A (en) * | 2021-06-15 | 2021-07-27 | 阳光电源股份有限公司 | Boost converter and boost system |
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| CN102013802A (en) * | 2010-12-17 | 2011-04-13 | 上海小糸车灯有限公司 | BOOST circuit with short circuit protection function |
| CN102612209A (en) * | 2012-01-20 | 2012-07-25 | 中国科学院上海技术物理研究所 | Recoverable protective circuit of boosting LED (light emitting diode) driving power supply and design method of recoverable protective circuit |
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| CN103606884A (en) * | 2013-11-25 | 2014-02-26 | 深圳市华星光电技术有限公司 | Over-current protection circuit, LED backlight drive circuit and liquid crystal display |
| CN203690895U (en) * | 2014-01-10 | 2014-07-02 | 深圳市垅运照明电器有限公司 | DC-DC boost short circuit protection circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7859868B2 (en) * | 2008-03-26 | 2010-12-28 | Hipro Electronics Co., Ltd. | Synchronous rectifier control circuit with deadtime adjustment to prevent crossover conduction |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102013802A (en) * | 2010-12-17 | 2011-04-13 | 上海小糸车灯有限公司 | BOOST circuit with short circuit protection function |
| CN102612209A (en) * | 2012-01-20 | 2012-07-25 | 中国科学院上海技术物理研究所 | Recoverable protective circuit of boosting LED (light emitting diode) driving power supply and design method of recoverable protective circuit |
| CN203180783U (en) * | 2013-04-12 | 2013-09-04 | 深圳市海洋王照明工程有限公司 | Boosted circuit |
| CN203368003U (en) * | 2013-07-01 | 2013-12-25 | 深圳Tcl新技术有限公司 | Dual protection device for Boost circuit |
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| CN105449642A (en) | 2016-03-30 |
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