CN204681274U - A kind of brshless DC motor metal-oxide-semiconductor drive circuit - Google Patents
A kind of brshless DC motor metal-oxide-semiconductor drive circuit Download PDFInfo
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- CN204681274U CN204681274U CN201520389214.2U CN201520389214U CN204681274U CN 204681274 U CN204681274 U CN 204681274U CN 201520389214 U CN201520389214 U CN 201520389214U CN 204681274 U CN204681274 U CN 204681274U
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Abstract
The utility model discloses a kind of brshless DC motor metal-oxide-semiconductor drive circuit, comprise the first ~ the second diode, the first ~ six triode, the first ~ four metal-oxide-semiconductor, the first ~ ten electric capacity, the first ~ ten resistance, 15V voltage input end, 5V voltage input end, pwm signal input, 48V voltage input end, output.Single-chip microcomputer receives the signal of Hall element etc., through internal calculation, exports fixing pwm signal to control opening and turning off the rotation controlling motor of metal-oxide-semiconductor and lower metal-oxide-semiconductor in one-period.Pwm signal controls the break-make of drive circuit related device, controls the switch of power MOS pipe with this.Wherein, the charging/discharging function of bootstrap capacitor can improve the precision of switch control rule well.Further, use the method for metal-oxide-semiconductor parallel connection can increase the band carrying capacity of drive circuit, meet the brushless DC motor system of different capacity demand.
Description
Technical field
The utility model relates to a kind of drive circuit, particularly relates to a kind of brshless DC motor metal-oxide-semiconductor drive circuit.
Background technology
Brushless DC motor obtains increasingly extensive application in every field, and output is huge, is the main development direction of motor, has now been successfully applied to multiple fields such as military affairs, aviation, computer, Digit Control Machine Tool, robot and electric bicycle.For the metal-oxide-semiconductor drive circuit of existing brshless DC motor, it is excessive that its control strategy adopted there will be switch MOS pipe gate drive current more, thus cause loss too high and the defect such as drive circuit power is less than normal, therefore, need a kind of new metal-oxide-semiconductor drive circuit to solve the problems referred to above, reach the better control action of motor.
Utility model content
Technical problem to be solved in the utility model is: provide a kind of brshless DC motor metal-oxide-semiconductor drive circuit, by the gate drive voltage of reasonable disposition power MOS pipe, reduce its switching loss, increase the service life, and by the cooperative pattern of multitube, add the power of drive circuit.
The utility model is for solving the problems of the technologies described above by the following technical solutions:
A kind of brshless DC motor metal-oxide-semiconductor drive circuit, comprises the first ~ the second diode, the first ~ six triode, the first ~ four metal-oxide-semiconductor, the first ~ ten electric capacity, the first ~ ten resistance;
One end of 15V voltage input end and the first electric capacity, the anode of the first diode, one end of 3rd resistance, the collector electrode of the second triode is connected, and 5V voltage input end is connected through the base stage of the first resistance with the first triode, and pwm signal input is connected through the emitter of the second resistance with the first triode, the collector electrode of the first triode and one end of the 4th resistance, the base stage of the 3rd triode is connected, the other end of the 4th resistance and the negative electrode of the first diode, the collector electrode of the 3rd triode, one end of second electric capacity is connected, the emitter of the 3rd triode and the anode of the second diode, one end of 6th resistance, the base stage of the 4th triode is connected, and the negative electrode of the second diode is through the collector electrode of the 5th resistance and the 4th triode, the grid of the first metal-oxide-semiconductor, the grid of the second metal-oxide-semiconductor, one end of 3rd electric capacity is connected, the other end of the 6th resistance and the emitter of the 4th triode, one end of 7th resistance, the other end of the second electric capacity, the other end of the 3rd electric capacity, the source electrode of the first metal-oxide-semiconductor, the source electrode of the second metal-oxide-semiconductor, the drain electrode of the 3rd metal-oxide-semiconductor, the drain electrode of the 4th metal-oxide-semiconductor, output is connected, the drain electrode of the first metal-oxide-semiconductor, common and the 48V voltage input end of the drain electrode of the second metal-oxide-semiconductor, one end of 4th electric capacity, one end of 5th electric capacity is connected, the other end of the 4th electric capacity, the equal ground connection of the other end of the 5th electric capacity,
5V voltage input end is also connected with the base stage of the 5th triode, the collector electrode of the 5th triode and the other end of the 3rd resistance, the base stage of the second triode is connected, the emitter of the 5th triode is through one end of the 9th resistance and the tenth resistance, pwm signal input is connected, the other end of the tenth resistance is connected with the base stage of the 6th triode, the grounded emitter of the 6th triode, the collector electrode of the 6th triode and one end of the 8th resistance, the grid of the 3rd metal-oxide-semiconductor, the grid of the 4th metal-oxide-semiconductor, one end of 6th electric capacity is connected, the other end of the 8th resistance is connected with the emitter of the second triode, the other end of the 6th electric capacity and the source electrode of the 3rd metal-oxide-semiconductor, the source electrode of the 4th metal-oxide-semiconductor, the other end of the 7th resistance, one end of 7th electric capacity, one end of 8th electric capacity, one end of 9th electric capacity, one end of tenth electric capacity is connected, the other end of the seven ~ ten electric capacity is all connected with 48V voltage input end.
As preferred embodiment of the present utility model, the model of described second diode is 4148.
As preferred embodiment of the present utility model, described 3rd electric capacity is bootstrap capacitor.
As preferred embodiment of the present utility model, the model of described first triode is 8050.
As preferred embodiment of the present utility model, the model of described first ~ four metal-oxide-semiconductor is TO-220.
The utility model adopts above technical scheme compared with prior art, has following technique effect:
1, the utility model brshless DC motor metal-oxide-semiconductor drive circuit, by the gate drive voltage of reasonable disposition power MOS pipe, reduces its switching loss, extends useful life.
2, the utility model brshless DC motor metal-oxide-semiconductor drive circuit, by the cooperative pattern of multitube, adds the power of drive circuit.
3, the utility model brshless DC motor metal-oxide-semiconductor drive circuit, circuit is simple and practical, good stability, reduces failure rate.
4, the utility model brshless DC motor metal-oxide-semiconductor drive circuit, with low cost, is easy to safeguard, market is widely used.
Accompanying drawing explanation
Fig. 1 is the integrated stand composition of the utility model brshless DC motor metal-oxide-semiconductor drive circuit.
Fig. 2 is the theory diagram of the utility model brshless DC motor metal-oxide-semiconductor drive circuit.
Wherein: D1 ~ D2 is the first ~ the second diode, G1 ~ G6 is the first ~ six triode, V1 ~ V4 is the first ~ four metal-oxide-semiconductor, C1 ~ C10 is the first ~ ten electric capacity, R1 ~ R10 is the first ~ ten resistance, C is output.
Embodiment
Be described below in detail execution mode of the present utility model, the example of described execution mode is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Being exemplary below by the execution mode be described with reference to the drawings, only for explaining the utility model, and can not being interpreted as restriction of the present utility model.
As shown in Figure 1, brshless DC motor metal-oxide-semiconductor drive circuit, comprises metal-oxide-semiconductor drive circuit, lower metal-oxide-semiconductor drive circuit and current sampling circuit.Upper metal-oxide-semiconductor drive circuit, one end of+15V voltage signal and electric capacity C1, the anode of diode D1, one end of resistance R3, the collector electrode of triode G2 is connected, + 5V voltage signal is connected with resistance R1 one end, and the resistance R1 other end is connected with the base stage of triode G1, and the emitter of triode G1 is connected with one end of resistance R2, another termination pwm control signal of resistance R2, the collector electrode of triode G1 and one end of resistance R4, the base stage of triode G3 is connected, the other end of resistance R4 and the negative electrode of diode D1, the collector electrode of triode G3, one end of electric capacity C2 is connected, the emitter of triode G3 and the anode of diode D2, one end of resistance R6, the base stage of triode G4 is connected, and the negative electrode of diode D2 is connected with one end of resistance R5, the other end of resistance R5 and the collector electrode of triode G4, the grid of metal-oxide-semiconductor V1, the grid of metal-oxide-semiconductor V2, one end of electric capacity C3 is connected, the other end of resistance R6 and the emitter of triode G4, one end of resistance R7, the other end of electric capacity C2, the other end of electric capacity C3, the source electrode of metal-oxide-semiconductor V1, the source electrode of metal-oxide-semiconductor V2, the drain electrode of metal-oxide-semiconductor V3, the drain electrode of metal-oxide-semiconductor V4, export C to be connected, the drain electrode of metal-oxide-semiconductor V1, the drain electrode of metal-oxide-semiconductor V2 is common with+48V voltage signal, one end of electric capacity C4, one end of electric capacity C5 is connected, the other end of electric capacity C4, the other end ground connection of electric capacity C5.
Lower metal-oxide-semiconductor drive circuit, + 5V voltage signal is connected with the base stage of triode G5, the collector electrode of triode G5 and the other end of resistance R3, the base stage of triode G2 is connected, the emitter of triode G5 is connected with one end of resistance R9, the other end of resistance R9 and one end of resistance R10, pwm control signal is connected, the resistance R10 other end is connected with triode G6 base stage, triode G6 grounded emitter, one end of triode G6 collector electrode and resistance R8, the grid of metal-oxide-semiconductor V3, the grid of metal-oxide-semiconductor V4, one end of electric capacity C6 is connected, the other end of resistance R8 is connected with the emitter of triode G2, the other end of electric capacity C6 and the source electrode of metal-oxide-semiconductor V3, the source electrode of metal-oxide-semiconductor V4, the other end of resistance R7, one end of electric capacity C7, one end of electric capacity C8, one end of electric capacity C9, one end of electric capacity C10 is connected, electric capacity C7, C8, C9, the other end of C10 is connected with+48V voltage signal jointly, current sampling circuit is made up of electric capacity C7, C8, C9, C10.
Brshless DC motor metal-oxide-semiconductor drive circuit, it is divided into metal-oxide-semiconductor drive circuit (i.e. V1 and V2) and lower metal-oxide-semiconductor drive circuit (i.e. V3 and V4).These two metal-oxide-semiconductor drive circuits separately work alone, and so do the failure rate that can reduce because circuit butt coupling etc. causes and extend its useful life, considerably increasing the stability of circuit.
Upper metal-oxide-semiconductor drive circuit, when pwm control signal is high level, metal-oxide-semiconductor V1 and V2 conducting, now, bootstrap capacitor C3 charges, after treating that pwm control signal level conversion makes relevant triode end so that associated driver circuitry quits work, bootstrap capacitor C3, by discharge diode G4 repid discharge, makes metal-oxide-semiconductor V1, V2 end at once, is in off state, improve control precision, thus reach the better control effects of motor.
Brshless DC motor metal-oxide-semiconductor drive circuit, commonly six pipe switching circuits, the utility model is by the working method of paralleling MOS pipe, the brshless DC motor metal-oxide-semiconductor drive circuit of six pipes, nine pipes, 12 pipes can be realized, so can meet the power demand of the brshless DC motor of different loads amount, such as electric bicycle is just larger with the power demand difference of electro-tricycle, and the former can adopt six pipes to drive, and latter can take nine pipes or 12 pipes to drive as required.
The object of multiple small capacitances parallel connection (i.e. C7 ~ C10) is adopted to be stray inductance in order to reduce electric capacity self, so both can reach the demand of bulky capacitor, stray inductance can be reduced again, voltage regulation filtering effect well can be played, make sample rate current undistorted, greatly improve the band carrying capacity of drive circuit, the power demand of the brshless DC motor under different service conditions is met, make the operation strategies of this drive circuit wider, market value is higher.
As shown in Figure 2, the operation principle of the utility model brshless DC motor metal-oxide-semiconductor drive circuit is: single-chip microcomputer receives the signal of Hall element etc., through internal calculation, in one-period, export fixing pwm signal control opening and turning off the rotation controlling motor of metal-oxide-semiconductor and lower metal-oxide-semiconductor.Pwm signal controls the break-make of drive circuit related device, controls the switch of power MOS pipe with this.Wherein, the charging/discharging function of bootstrap capacitor C3 can improve the precision of switch control rule well.Further, use the method for metal-oxide-semiconductor parallel connection can increase the band carrying capacity of drive circuit, meet the brushless DC motor system of different capacity demand.
The utility model, by the gate drive voltage of reasonable disposition power MOS pipe, reduces its switching loss, increases the service life by the cooperative pattern of multitube, increase the power of drive circuit.So, can reach the better control action of motor.
Above embodiment is only and technological thought of the present utility model is described; protection range of the present utility model can not be limited with this; every technological thought according to the utility model proposes, any change that technical scheme basis is done, all falls within the utility model protection range.
Claims (5)
1. a brshless DC motor metal-oxide-semiconductor drive circuit, is characterized in that: comprise the first ~ the second diode, the first ~ six triode, the first ~ four metal-oxide-semiconductor, the first ~ ten electric capacity, the first ~ ten resistance;
One end of 15V voltage input end and the first electric capacity, the anode of the first diode, one end of 3rd resistance, the collector electrode of the second triode is connected, and 5V voltage input end is connected through the base stage of the first resistance with the first triode, and pwm signal input is connected through the emitter of the second resistance with the first triode, the collector electrode of the first triode and one end of the 4th resistance, the base stage of the 3rd triode is connected, the other end of the 4th resistance and the negative electrode of the first diode, the collector electrode of the 3rd triode, one end of second electric capacity is connected, the emitter of the 3rd triode and the anode of the second diode, one end of 6th resistance, the base stage of the 4th triode is connected, and the negative electrode of the second diode is through the collector electrode of the 5th resistance and the 4th triode, the grid of the first metal-oxide-semiconductor, the grid of the second metal-oxide-semiconductor, one end of 3rd electric capacity is connected, the other end of the 6th resistance and the emitter of the 4th triode, one end of 7th resistance, the other end of the second electric capacity, the other end of the 3rd electric capacity, the source electrode of the first metal-oxide-semiconductor, the source electrode of the second metal-oxide-semiconductor, the drain electrode of the 3rd metal-oxide-semiconductor, the drain electrode of the 4th metal-oxide-semiconductor, output is connected, the drain electrode of the first metal-oxide-semiconductor, common and the 48V voltage input end of the drain electrode of the second metal-oxide-semiconductor, one end of 4th electric capacity, one end of 5th electric capacity is connected, the other end of the 4th electric capacity, the equal ground connection of the other end of the 5th electric capacity,
5V voltage input end is also connected with the base stage of the 5th triode, the collector electrode of the 5th triode and the other end of the 3rd resistance, the base stage of the second triode is connected, the emitter of the 5th triode is through one end of the 9th resistance and the tenth resistance, pwm signal input is connected, the other end of the tenth resistance is connected with the base stage of the 6th triode, the grounded emitter of the 6th triode, the collector electrode of the 6th triode and one end of the 8th resistance, the grid of the 3rd metal-oxide-semiconductor, the grid of the 4th metal-oxide-semiconductor, one end of 6th electric capacity is connected, the other end of the 8th resistance is connected with the emitter of the second triode, the other end of the 6th electric capacity and the source electrode of the 3rd metal-oxide-semiconductor, the source electrode of the 4th metal-oxide-semiconductor, the other end of the 7th resistance, one end of 7th electric capacity, one end of 8th electric capacity, one end of 9th electric capacity, one end of tenth electric capacity is connected, the other end of the seven ~ ten electric capacity is all connected with 48V voltage input end.
2. brshless DC motor metal-oxide-semiconductor drive circuit as claimed in claim 1, is characterized in that: the model of described second diode is 4148.
3. brshless DC motor metal-oxide-semiconductor drive circuit as claimed in claim 1, is characterized in that: described 3rd electric capacity is bootstrap capacitor.
4. brshless DC motor metal-oxide-semiconductor drive circuit as claimed in claim 1, is characterized in that: the model of described first triode is 8050.
5. brshless DC motor metal-oxide-semiconductor drive circuit as claimed in claim 1, is characterized in that: the model of described first ~ four metal-oxide-semiconductor is TO-220.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520389214.2U CN204681274U (en) | 2015-06-08 | 2015-06-08 | A kind of brshless DC motor metal-oxide-semiconductor drive circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520389214.2U CN204681274U (en) | 2015-06-08 | 2015-06-08 | A kind of brshless DC motor metal-oxide-semiconductor drive circuit |
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| CN204681274U true CN204681274U (en) | 2015-09-30 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105763108A (en) * | 2016-04-21 | 2016-07-13 | 江苏科技大学 | MOS transistor drive circuit for brushless direct current motor |
| CN105811819A (en) * | 2016-04-21 | 2016-07-27 | 江苏科技大学 | MOS (Metal Oxide Semiconductor) tube drive circuit used for motor control |
| CN114744929A (en) * | 2022-06-09 | 2022-07-12 | 深圳市助尔达电子科技有限公司 | Motor drive power adapter |
-
2015
- 2015-06-08 CN CN201520389214.2U patent/CN204681274U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105763108A (en) * | 2016-04-21 | 2016-07-13 | 江苏科技大学 | MOS transistor drive circuit for brushless direct current motor |
| CN105811819A (en) * | 2016-04-21 | 2016-07-27 | 江苏科技大学 | MOS (Metal Oxide Semiconductor) tube drive circuit used for motor control |
| CN105811819B (en) * | 2016-04-21 | 2018-08-17 | 佛山市耀升制冷科技有限公司 | A kind of motor control metal-oxide-semiconductor driving circuit |
| CN108667362A (en) * | 2016-04-21 | 2018-10-16 | 惠安县信达友工业设计有限公司 | A kind of method that motor control is driven with metal-oxide-semiconductor |
| CN114744929A (en) * | 2022-06-09 | 2022-07-12 | 深圳市助尔达电子科技有限公司 | Motor drive power adapter |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150930 Termination date: 20160608 |
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| CF01 | Termination of patent right due to non-payment of annual fee |