CN105763108A - MOS transistor drive circuit for brushless direct current motor - Google Patents
MOS transistor drive circuit for brushless direct current motor Download PDFInfo
- Publication number
- CN105763108A CN105763108A CN201610251034.7A CN201610251034A CN105763108A CN 105763108 A CN105763108 A CN 105763108A CN 201610251034 A CN201610251034 A CN 201610251034A CN 105763108 A CN105763108 A CN 105763108A
- Authority
- CN
- China
- Prior art keywords
- resistance
- audion
- oxide
- metal
- drive circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P6/00—Arrangements for controlling synchronous motors or other dynamo-electric motors using electronic commutation dependent on the rotor position; Electronic commutators therefor
- H02P6/08—Arrangements for controlling the speed or torque of a single motor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Control Of Direct Current Motors (AREA)
Abstract
The invention discloses an MOS transistor drive circuit for a brushless direct current motor. The MOS transistor drive circuit includes an upper MOS transistor drive circuit and a lower MOS transistor drive circuit, wherein the upper MOS transistor drive circuit and the lower MOS transistor drive circuit independently work respectively. The circuit structure can solve the problems that for a current motor MOS transistor drive circuit, the MOS transistor gate drive current for turning on or turning off is too heavy so that the loss is too high and the drive current power is relatively small, and has the advantages of being simple in structure, being stable in performance, being lower in cost and being high in accuracy.
Description
Technical field
The present invention relates to a kind of drive circuit, particularly to the metal-oxide-semiconductor drive circuit of a kind of brshless DC motor.
Background technology
Motor has been successfully applied to multiple fields such as military affairs, aviation, computer, Digit Control Machine Tool, robot and electric bicycle.For the metal-oxide-semiconductor drive circuit of existing motor, its control strategy adopted there will be that switch metal-oxide-semiconductor gate drive current is excessive causes loss too high and the defect such as drive circuit power is less than normal more, haves much room for improvement.
Summary of the invention
The purpose of the present invention, it is in that to provide a kind of brshless DC motor metal-oxide-semiconductor drive circuit, it can solve, and existing motor metal-oxide-semiconductor drive circuit switch metal-oxide-semiconductor gate drive current is excessive to be caused loss too high and drives the problems such as current power is less than normal, has simple in construction, stable performance, the feature that less costly and accuracy is high.
In order to reach above-mentioned purpose, the solution of the present invention is:
A kind of brshless DC motor metal-oxide-semiconductor drive circuit, including interconnective upper metal-oxide-semiconductor drive circuit and lower metal-oxide-semiconductor drive circuit.
Above-mentioned upper metal-oxide-semiconductor drive circuit includes the first to the 8th resistance, the first to the second diode, first to fourth audion, the first to the second electric capacity and the first metal-oxide-semiconductor, wherein, + 15V voltage signal and the anode of the first diode, one end of the first resistance, the first audion emitter stage be connected, one end of+3.3V voltage signal and the second resistance is connected, the other end of the second resistance and the base stage of the second audion are connected, the emitter stage of the second audion and one end of the 3rd resistance are connected, another termination PWMA+ control signal of the 3rd resistance；The colelctor electrode of the second audion and one end of the 4th resistance, the base stage of the 3rd audion is connected, the other end of the 4th resistance and the negative electrode of the first diode, the colelctor electrode of the 3rd audion, one end of first electric capacity, one end of 5th resistance is connected, the colelctor electrode of the 3rd audion and the anode of the second diode, one end of 6th resistance, the base stage of the 4th audion is connected, the negative electrode of the second diode and one end of the 7th resistance are connected, the other end of the 7th resistance and the emitter stage of the 4th audion, the grid of the first metal-oxide-semiconductor, one end of second electric capacity is connected, the other end of the 6th resistance and the colelctor electrode of the 4th audion, one end of 8th resistance, the other end of the first electric capacity, the other end of the 5th resistance, the other end of the second electric capacity, the source electrode of the first metal-oxide-semiconductor, outfan is connected.
The model that above-mentioned first electric capacity adopts is 50V/47UF.
The drain electrode of above-mentioned first metal-oxide-semiconductor connects+48V voltage signal.
nullAbove-mentioned lower metal-oxide-semiconductor drive circuit includes the 9th to the 11st resistance、3rd diode、5th to the 6th audion、3rd to the 4th electric capacity and the second metal-oxide-semiconductor，Wherein，The base stage of+3.3V voltage signal and the 5th audion、One end of 3rd electric capacity is connected，The other end ground connection of the 3rd electric capacity，The colelctor electrode of the 5th audion and the other end of the first resistance、The base stage of the first audion is connected，The emitter stage of the 5th audion and one end of the 9th resistance are connected，The other end of the 9th resistance is connected with PWMA-control signal，The colelctor electrode of the first audion and one end of the tenth resistance、The base stage of the 6th audion、The anode of the 3rd diode is connected，The negative electrode of the 3rd diode and one end of the 11st resistance are connected，The other end of the 11st resistance and the colelctor electrode of the 6th audion、One end of 4th electric capacity、The grid of the second metal-oxide-semiconductor is connected，The drain electrode of the second metal-oxide-semiconductor connects outfan，The other end of the tenth resistance and the emitter stage of the 6th audion、The other end of the 8th resistance、The other end of the 4th electric capacity、The source electrode of the second metal-oxide-semiconductor is commonly connected to sampling end.
After adopting such scheme, the invention have the characteristics that:
(1) by the gate drive voltage of reasonable disposition power MOS pipe, reduce its switching loss, increase the service life, it is achieved motor is better controlled；
(2) by the cooperative pattern of multitube, can reduce because of fault rate and extend its service life；
(3) circuit is simple and practical, good stability, with low cost, it is easy to safeguarding, market is widely used.
Accompanying drawing explanation
Fig. 1 is the integrated stand composition of the present invention.
Detailed description of the invention
Below with reference to accompanying drawing, technical scheme is described in detail.
As it is shown in figure 1, the present invention provides a kind of brshless DC motor metal-oxide-semiconductor drive circuit, including upper metal-oxide-semiconductor drive circuit and lower metal-oxide-semiconductor drive circuit, introduce separately below.
Upper metal-oxide-semiconductor drive circuit includes 8 resistance R1-R8,2 diode D1-D2,4 audion Q1-Q4,2 electric capacity C1-C2 and 1 metal-oxide-semiconductor V1, wherein, + 15V voltage signal and the anode of diode D1, one end of resistance R1, audion Q1 emitter stage be connected, + 3.3V voltage signal is connected with one end of resistance R2, the other end of resistance R2 is connected with the base stage of audion Q2, the emitter stage of audion Q2 is connected with one end of resistance R3, another termination PWMA+ control signal of resistance R3；One end of the colelctor electrode of audion Q2 and resistance R4, the base stage of audion Q3 is connected, the negative electrode of the other end of resistance R4 and diode D1, the colelctor electrode of audion Q3, one end of electric capacity C1, one end of resistance R5 is connected, the anode of the colelctor electrode of audion Q3 and diode D2, one end of resistance R6, the base stage of audion Q4 is connected, the negative electrode of diode D2 is connected with one end of resistance R7, the emitter stage of the other end of resistance R7 and audion Q4, the grid of metal-oxide-semiconductor V1, one end of electric capacity C2 is connected, the colelctor electrode of the other end of resistance R6 and audion Q4, one end of resistance R8, the other end of electric capacity C1, the other end of resistance R5, the other end of electric capacity C2, the source electrode of metal-oxide-semiconductor V1, the drain electrode of metal-oxide-semiconductor V2, output terminals A is connected.
nullDescribed lower metal-oxide-semiconductor drive circuit includes 3 resistance R9-R11、1 diode D3、2 audion Q5-Q6、2 electric capacity C3-C4 and 1 metal-oxide-semiconductor V2，Wherein，The base stage of+3.3V voltage signal and audion Q5、One end of electric capacity C3 is connected，The other end ground connection of electric capacity C3，The other end of the colelctor electrode of audion Q5 and resistance R1、The base stage of audion Q1 is connected，The emitter stage of audion Q5 is connected with one end of resistance R9，The other end of resistance R9 is connected with PWMA-control signal，One end of the colelctor electrode of audion Q1 and resistance R10、The base stage of audion Q6、The anode of diode D3 is connected，The negative electrode of diode D3 is connected with one end of resistance R11，The colelctor electrode of the other end of resistance R11 and audion Q6、One end of electric capacity C4、The grid of metal-oxide-semiconductor V2 is connected，The emitter stage of the other end of resistance R10 and audion Q6、The other end of resistance R8、The other end of electric capacity C4、The source electrode of metal-oxide-semiconductor V2 is commonly connected to sampling end (sampling).
Adopting circuit structure provided by the invention, upper metal-oxide-semiconductor drive circuit separates with lower metal-oxide-semiconductor drive circuit and works alone, and so can reduce because circuit connects the fault rate that coupling etc. causes, be greatly increased the stability of circuit, increase the service life.On the other hand, the pwm control signal of PWM output module output is not directly or indirectly added on metal-oxide-semiconductor, but by the reasonable disposition of combinational circuit, reduces its impact to device, extends the service life of related device.
During work, single-chip microcomputer receives the signal of Hall element etc., after calculating, within a cycle, export fixing pwm signal control turning on and off of two metal-oxide-semiconductors V1, V2, thus controlling the rotation of brshless DC motor, the break-make of drive circuit related device is controlled, thus reaching to control the purpose of metal-oxide-semiconductor switch by pwm signal.In upper metal-oxide-semiconductor drive circuit, electric capacity C1 is as bootstrap capacitor, and its discharge and recharge can improve the pwm signal control accuracy to metal-oxide-semiconductor well, reaches brshless DC motor is better controlled effect.When PWMA control signal is high level, metal-oxide-semiconductor V1 turns on, now, bootstrap capacitor C1 charges, treat that PWMA control signal level conversion makes the cut-off of relevant audion so that after associated driver circuitry quits work, bootstrap capacitor C1 passes through discharge diode Q4 repid discharge, makes metal-oxide-semiconductor V1 be immediately turned off, it is off state, improves control accuracy.
Above example is only the technological thought that the present invention is described, it is impossible to limits protection scope of the present invention, every technological thought proposed according to the present invention, any change done on technical scheme basis with this, each falls within scope.
Claims (5)
1. a brshless DC motor metal-oxide-semiconductor drive circuit, it is characterised in that: include interconnective upper metal-oxide-semiconductor drive circuit and lower metal-oxide-semiconductor drive circuit.
2. a kind of brshless DC motor metal-oxide-semiconductor drive circuit as claimed in claim 1, it is characterized in that: described upper metal-oxide-semiconductor drive circuit includes the first to the 8th resistance, the first to the second diode, first to fourth audion, the first to the second electric capacity and the first metal-oxide-semiconductor, wherein, the anode of+15V voltage signal and the first diode, one end of first resistance, the emitter stage of the first audion is connected, one end of+3.3V voltage signal and the second resistance is connected, the other end of the second resistance and the base stage of the second audion are connected, the emitter stage of the second audion and one end of the 3rd resistance are connected, another termination PWMA+ control signal of 3rd resistance；The colelctor electrode of the second audion and one end of the 4th resistance, the base stage of the 3rd audion is connected, the other end of the 4th resistance and the negative electrode of the first diode, the colelctor electrode of the 3rd audion, one end of first electric capacity, one end of 5th resistance is connected, the colelctor electrode of the 3rd audion and the anode of the second diode, one end of 6th resistance, the base stage of the 4th audion is connected, the negative electrode of the second diode and one end of the 7th resistance are connected, the other end of the 7th resistance and the emitter stage of the 4th audion, the grid of the first metal-oxide-semiconductor, one end of second electric capacity is connected, the other end of the 6th resistance and the colelctor electrode of the 4th audion, one end of 8th resistance, the other end of the first electric capacity, the other end of the 5th resistance, the other end of the second electric capacity, the source electrode of the first metal-oxide-semiconductor, outfan is connected.
3. a kind of brshless DC motor metal-oxide-semiconductor drive circuit as claimed in claim 2, it is characterised in that: the model that described first electric capacity adopts is 50V/47UF.
4. a kind of brshless DC motor metal-oxide-semiconductor drive circuit as claimed in claim 2, it is characterised in that: the drain electrode of described first metal-oxide-semiconductor connects+48V voltage signal.
null5. a kind of brshless DC motor metal-oxide-semiconductor drive circuit as claimed in claim 2，It is characterized in that: described lower metal-oxide-semiconductor drive circuit includes the 9th to the 11st resistance、3rd diode、5th to the 6th audion、3rd to the 4th electric capacity and the second metal-oxide-semiconductor，Wherein，The base stage of+3.3V voltage signal and the 5th audion、One end of 3rd electric capacity is connected，The other end ground connection of the 3rd electric capacity，The colelctor electrode of the 5th audion and the other end of the first resistance、The base stage of the first audion is connected，The emitter stage of the 5th audion and one end of the 9th resistance are connected，The other end of the 9th resistance is connected with PWMA-control signal，The colelctor electrode of the first audion and one end of the tenth resistance、The base stage of the 6th audion、The anode of the 3rd diode is connected，The negative electrode of the 3rd diode and one end of the 11st resistance are connected，The other end of the 11st resistance and the colelctor electrode of the 6th audion、One end of 4th electric capacity、The grid of the second metal-oxide-semiconductor is connected，The drain electrode of the second metal-oxide-semiconductor connects outfan，The other end of the tenth resistance and the emitter stage of the 6th audion、The other end of the 8th resistance、The other end of the 4th electric capacity、The source electrode of the second metal-oxide-semiconductor is commonly connected to sampling end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610251034.7A CN105763108A (en) | 2016-04-21 | 2016-04-21 | MOS transistor drive circuit for brushless direct current motor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610251034.7A CN105763108A (en) | 2016-04-21 | 2016-04-21 | MOS transistor drive circuit for brushless direct current motor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105763108A true CN105763108A (en) | 2016-07-13 |
Family
ID=56325448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610251034.7A Pending CN105763108A (en) | 2016-04-21 | 2016-04-21 | MOS transistor drive circuit for brushless direct current motor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105763108A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050194925A1 (en) * | 2004-02-10 | 2005-09-08 | Denso Corporation | Apparatus for controlling three-phase AC motor on two-phase modulation technique |
| CN101420198A (en) * | 2008-12-05 | 2009-04-29 | 广州华南智信微系统有限公司 | Five phase DC brushless motor controller |
| CN202004718U (en) * | 2011-05-06 | 2011-10-05 | 重庆建兴智能仪表有限责任公司 | High-efficiency sensorless brushless motor vector controller for power supplying of lithium battery for electric vehicle |
| CN204681274U (en) * | 2015-06-08 | 2015-09-30 | 无锡机电高等职业技术学校 | A kind of brshless DC motor metal-oxide-semiconductor drive circuit |
-
2016
- 2016-04-21 CN CN201610251034.7A patent/CN105763108A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050194925A1 (en) * | 2004-02-10 | 2005-09-08 | Denso Corporation | Apparatus for controlling three-phase AC motor on two-phase modulation technique |
| CN101420198A (en) * | 2008-12-05 | 2009-04-29 | 广州华南智信微系统有限公司 | Five phase DC brushless motor controller |
| CN202004718U (en) * | 2011-05-06 | 2011-10-05 | 重庆建兴智能仪表有限责任公司 | High-efficiency sensorless brushless motor vector controller for power supplying of lithium battery for electric vehicle |
| CN204681274U (en) * | 2015-06-08 | 2015-09-30 | 无锡机电高等职业技术学校 | A kind of brshless DC motor metal-oxide-semiconductor drive circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201975986U (en) | Full-bridge drive circuit of square wave inverter | |
| CN204681274U (en) | A kind of brshless DC motor metal-oxide-semiconductor drive circuit | |
| CN105449642B (en) | A kind of guard method of Boost circuit and circuit | |
| CN201750125U (en) | Short circuit self-locking protection circuit | |
| CN103762848A (en) | Drive circuit for switch type double-end direct-current converter | |
| CN105811819A (en) | MOS (Metal Oxide Semiconductor) tube drive circuit used for motor control | |
| CN104052337B (en) | Motor driving circuit | |
| CN105763108A (en) | MOS transistor drive circuit for brushless direct current motor | |
| CN217508279U (en) | Low-voltage large-current direct-current input anti-reverse connection circuit with pre-charging function | |
| CN112039321A (en) | Power-on and power-off locking protection circuit of servo driver IGBT module | |
| CN202713267U (en) | Field effect transistor driving circuit | |
| CN103956946A (en) | Low-voltage high-power direct-current motor control circuit with overcurrent protection function | |
| CN214001803U (en) | Reverse connection prevention protection circuit of electric power steering system | |
| CN103532474A (en) | MOS (metal oxide semiconductor) tube driving circuit of motor controller | |
| CN109149925B (en) | A kind of buck circuit | |
| CN207166838U (en) | A kind of backlight constant current drive circuit | |
| CN205545181U (en) | Parasitic conduction effect eliminating circuit | |
| CN113315334A (en) | Linear driver drive control system | |
| CN106849926A (en) | A kind of pressure nmos switch control circuit wide | |
| CN206283485U (en) | A kind of simple SICMOS drive circuits | |
| CN204851729U (en) | A PWM fan control circuit for refrigerator | |
| CN203788206U (en) | Low-voltage large-power direct current motor control circuit with over-current protection | |
| CN203788150U (en) | Drive circuit for switch type double-end direct-current converter | |
| CN211183395U (en) | Direct current load positive and negative conversion circuit for small voltage control | |
| CN203872148U (en) | Refrigerator electromagnetic door drive inductor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160713 |