CN207884494U - A kind of positive-negative power generation circuit suitable for IGBT drivings - Google Patents
A kind of positive-negative power generation circuit suitable for IGBT drivings Download PDFInfo
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- CN207884494U CN207884494U CN201820341219.1U CN201820341219U CN207884494U CN 207884494 U CN207884494 U CN 207884494U CN 201820341219 U CN201820341219 U CN 201820341219U CN 207884494 U CN207884494 U CN 207884494U
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- 238000010248 power generation Methods 0.000 title claims abstract description 8
- 239000003990 capacitor Substances 0.000 claims abstract description 37
- 230000000087 stabilizing effect Effects 0.000 claims abstract description 19
- 230000008878 coupling Effects 0.000 claims abstract description 5
- 238000010168 coupling process Methods 0.000 claims abstract description 5
- 238000005859 coupling reaction Methods 0.000 claims abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
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Abstract
Description
技术领域technical field
本实用新型涉及IGBT驱动电路,更具体的是涉及一种适用于IGBT驱动的正负电源产生电路。The utility model relates to an IGBT drive circuit, in particular to a positive and negative power supply generation circuit suitable for IGBT drive.
背景技术Background technique
米勒效应所产生的电容和峰值问题在日常工作中,属于一种比较常见的情况。在IGBT模块操作中,如果没有及时处理米勒电容问题,很容易造成IGBT损坏。在日常的工作过程中,IGBT模块操作时一旦出现了米勒效应的寄生电容问题,往往见于明显的在0到15V类型的门极驱动器,也就是工程师们常说的单电源驱动器。门集-电极之间的耦合在IGBT关断期间,高du/dt瞬态可诱导寄生IGBT道通,也就是门集电压尖峰,这对于IGBT乃至整机来说,都是一种潜在的危险。通常情况下,为了防止出现寄生IGBT通道的情况发生,通常有三种解决办法。第一个办法是为配置添加门极和发射极之间的电容,第二是通过使用负门极电压驱动,第三个是改变门极电阻。如果使用第一方案,那么会使驱动电源功耗增加,相同的门极驱动电阻情况下IGBT的开关损耗也会增加。第二个方案则需要考虑到额外费用和成本问题。第三种方法会增加开通损耗。The capacitance and peak problems caused by the Miller effect are a relatively common situation in daily work. In the operation of the IGBT module, if the Miller capacitance problem is not dealt with in time, it is easy to cause damage to the IGBT. In the daily work process, once the parasitic capacitance problem of the Miller effect occurs during the operation of the IGBT module, it is often seen in the obvious 0 to 15V type gate driver, which is what engineers often call a single-supply driver. Gate-collector-electrode coupling During IGBT turn-off, high du/dt transients can induce parasitic IGBT pass-through, that is, gate-collector voltage spikes, which is a potential hazard for the IGBT and even the entire machine . Generally, in order to prevent the occurrence of parasitic IGBT channels, there are usually three solutions. The first is to add capacitance between the gate and emitter to the configuration, the second is by driving with a negative gate voltage, and the third is to change the gate resistance. If the first solution is used, the power consumption of the driving power will increase, and the switching loss of the IGBT will also increase under the same gate drive resistance. The second option requires consideration of additional costs and costs. The third method will increase the turn-on loss.
IGBT模块工作时驱动电源过高会导致短路电流过大,甚至击穿IGBT栅极,过低会导致IGBT发热严重,降低IGBT寿命。而由于寄生米勒电容的存在,高的关断du/dt会给栅极充电,导致IGBT误开通,因此需要一个负电源可靠的关断。现有技术中,一般采用齐纳二极管来产生正负电源,而齐纳二极管稳压范围有限,输入电源波动时稳压效果就会降低。When the IGBT module is working, the driving power is too high, which will cause the short-circuit current to be too large, and even break down the IGBT gate. If the driving power is too low, it will cause serious heating of the IGBT and reduce the life of the IGBT. Due to the existence of parasitic Miller capacitance, high turn-off du/dt will charge the gate, resulting in false turn-on of IGBT, so a negative power supply is required for reliable turn-off. In the prior art, Zener diodes are generally used to generate positive and negative power supplies, but the Zener diodes have a limited voltage stabilization range, and the voltage stabilization effect will be reduced when the input power fluctuates.
实用新型内容Utility model content
本实用新型的目的在于:提供一种能够在IGBT驱动输入电源波动范围过大时,降低输出电源的波动的适用于IGBT驱动的正负电源产生电路。The purpose of the utility model is to provide a positive and negative power generating circuit suitable for IGBT driving, which can reduce the fluctuation of the output power when the fluctuation range of the IGBT driving input power is too large.
本实用新型为了实现上述目的具体采用以下技术方案:The utility model specifically adopts the following technical solutions in order to achieve the above object:
一种适用于IGBT驱动的正负电源产生电路,包括输入电源、稳压芯片、齐纳二极管和电阻R1,所述输入电源之间连接有两个耦合电容器,电容器C2与电容器C3之间串联,所述齐纳二极管的阳极与所述电容器C2与电容器C3之间的节点连接,所述齐纳二极管的阳极接地,其阴极与电阻R1的一端连接,所述电阻R1的另一端连接到输入电压,输入电压与所述稳压芯片的输入端连接,所述电阻R1与齐纳二极管阴极之间的节点与所述稳压芯片的信号地相连接,所述稳压芯片的输出端连接正负电源产生电路的低压输出端Vo,低压输出端Vo连接有电容器C1,电容器C1的另一端接地。A positive and negative power generation circuit suitable for IGBT driving, comprising an input power supply, a voltage stabilizing chip, a Zener diode and a resistor R1, two coupling capacitors are connected between the input power supplies, and capacitor C2 and capacitor C3 are connected in series, The anode of the Zener diode is connected to the node between the capacitor C2 and the capacitor C3, the anode of the Zener diode is connected to the ground, the cathode thereof is connected to one end of the resistor R1, and the other end of the resistor R1 is connected to the input voltage , the input voltage is connected to the input terminal of the voltage stabilizing chip, the node between the resistor R1 and the cathode of the Zener diode is connected to the signal ground of the voltage stabilizing chip, and the output terminal of the voltage stabilizing chip is connected to positive and negative The low-voltage output terminal Vo of the power generation circuit is connected to a capacitor C1, and the other end of the capacitor C1 is grounded.
工作原理:IGBT驱动输入电源串接两个分压电容C2和C3,电阻R1和齐纳二极管串联连接后并联在其中一个稳压电容C2上,取电阻R1两端电压作为稳压芯片的输入,稳压芯片输出端连接滤波电容器C1到电容器C2端,电容器C1两端电压Vo就是输出正电源,电容器C3两端电压就是输出负电源。当输入电源波动时,只要大于齐纳二极管的最低电压,稳压器能稳定输出正电源Vo和负电源。Working principle: The IGBT drive input power supply is connected in series with two voltage-dividing capacitors C2 and C3, and the resistor R1 and Zener diode are connected in series and then connected in parallel to one of the voltage-stabilizing capacitors C2. The voltage across the resistor R1 is taken as the input of the voltage-stabilizing chip. The output terminal of the voltage regulator chip is connected to the filter capacitor C1 and the capacitor C2 terminal, the voltage Vo across the capacitor C1 is the output positive power supply, and the voltage across the capacitor C3 is the output negative power supply. When the input power fluctuates, as long as it is greater than the minimum voltage of the Zener diode, the voltage regulator can stably output positive power Vo and negative power.
本实用新型的有益效果:与现有技术相比,本发明利用稳压芯片的宽输入电压范围,高精度稳压输出,只要电源电压高于齐纳二极管的最低电压,就可以得到稳定的输出电压,这样就扩大了输入电源波动范围,也解决了输出波动问题。Beneficial effects of the utility model: Compared with the prior art, the present invention utilizes the wide input voltage range of the voltage stabilizing chip and high-precision voltage stabilizing output, as long as the power supply voltage is higher than the minimum voltage of the Zener diode, a stable output can be obtained Voltage, which expands the range of input power fluctuations and also solves the problem of output fluctuations.
附图说明Description of drawings
图1是本实用新型的结构示意图。Fig. 1 is the structural representation of the utility model.
具体实施方式Detailed ways
为使本实用新型的目的、技术方案和优点更加清楚明白,下面结合实施例和附图,对本实用新型作进一步的详细说明,本实用新型的示意性实施方式及其说明仅用于解释本实用新型,并不作为对本实用新型的限定。In order to make the purpose, technical solutions and advantages of the utility model clearer, the utility model will be further described in detail below in conjunction with the examples and accompanying drawings. The schematic implementation of the utility model and its description are only used to explain the utility model Novelty, not as a limitation to the utility model.
如图1所示,本实施提供一种适用于IGBT驱动的正负电源产生电路,包括输入电源、稳压芯片U1、齐纳二极管Zd和电阻R1,所述输入电源之间连接有两个耦合电容器,电容器C2与电容器C3之间串联,所述齐纳二极管Zd的阳极连接在电容器C2和电容器C3之间的节点上,所述齐纳二极管Zd阳极接地,其阴极与电阻R1的一端连接,所述电阻R1的另一端连接到输入电压VSS,输入电压VSS与所述稳压芯片U1的输入端vin连接,所述电阻R1与齐纳二极管Zd阴极之间的节点与所述稳压芯片U1的信号地gnd相连接,所述稳压芯片U1的输出端vout连接正负电源产生电路的低压输出端Vo,低压输出端Vo连接有电容器C1,电容器C1的另一端接地。As shown in Figure 1, this implementation provides a positive and negative power generation circuit suitable for IGBT driving, including an input power supply, a voltage regulator chip U1, a Zener diode Zd, and a resistor R1, and two couplings are connected between the input power supplies The capacitor is connected in series between the capacitor C2 and the capacitor C3, the anode of the zener diode Zd is connected to the node between the capacitor C2 and the capacitor C3, the anode of the zener diode Zd is grounded, and its cathode is connected to one end of the resistor R1, The other end of the resistor R1 is connected to the input voltage VSS, the input voltage VSS is connected to the input terminal vin of the voltage stabilizing chip U1, and the node between the resistor R1 and the cathode of the Zener diode Zd is connected to the voltage stabilizing chip U1 The signal ground of the voltage regulator chip U1 is connected to the ground gnd, the output terminal vout of the voltage stabilizing chip U1 is connected to the low voltage output terminal Vo of the positive and negative power supply generation circuit, the low voltage output terminal Vo is connected to the capacitor C1, and the other end of the capacitor C1 is grounded.
本实施例中,IGBT驱动输入电源串接两个分压电容C2和C3,电阻R1和齐纳二极管Zd串联连接后并联在其中一个稳压电容C2上,取电阻R1两端电压作为稳压芯片U1的输入,稳压芯片输出端vout连接滤波电容器C1到电容器C2端,电容器C1两端电压Vo就是输出正电源,电容器C3两端电压就是输出负电源。当输入电源波动时,只要大于齐纳二极管Zd的最低电压,稳压器能稳定输出正电源Vo和负电源。In this embodiment, the IGBT drive input power supply is connected in series with two voltage dividing capacitors C2 and C3, the resistor R1 and the Zener diode Zd are connected in series and then connected in parallel to one of the voltage stabilizing capacitors C2, and the voltage at both ends of the resistor R1 is taken as the voltage stabilizing chip The input of U1, the output terminal vout of the voltage regulator chip is connected to the filter capacitor C1 to the capacitor C2 terminal, the voltage Vo across the capacitor C1 is the output positive power supply, and the voltage across the capacitor C3 is the output negative power supply. When the input power fluctuates, as long as it is greater than the minimum voltage of the Zener diode Zd, the voltage regulator can stably output positive power Vo and negative power.
以上所述,仅为本实用新型的较佳实施例,并不用以限制本实用新型,本实用新型的专利保护范围以权利要求书为准,凡是运用本实用新型的说明书及附图内容所作的等同结构变化,同理均应包含在本实用新型的保护范围内。The above is only a preferred embodiment of the utility model, and is not intended to limit the utility model. The scope of patent protection of the utility model is subject to the claims. Equivalent structural changes should be included in the protection scope of the present utility model in the same way.
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| CN201820341219.1U CN207884494U (en) | 2018-03-13 | 2018-03-13 | A kind of positive-negative power generation circuit suitable for IGBT drivings |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111030662A (en) * | 2019-12-02 | 2020-04-17 | 精进电动科技股份有限公司 | An IGBT gate drive circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111030662A (en) * | 2019-12-02 | 2020-04-17 | 精进电动科技股份有限公司 | An IGBT gate drive circuit |
| CN111030662B (en) * | 2019-12-02 | 2024-01-23 | 精进电动科技股份有限公司 | IGBT grid driving circuit |
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Granted publication date: 20180918 |