CN104467559A - Brushless motor H-bridge drive circuit - Google Patents
Brushless motor H-bridge drive circuit Download PDFInfo
- Publication number
- CN104467559A CN104467559A CN201410752077.4A CN201410752077A CN104467559A CN 104467559 A CN104467559 A CN 104467559A CN 201410752077 A CN201410752077 A CN 201410752077A CN 104467559 A CN104467559 A CN 104467559A
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- Prior art keywords
- drive circuit
- nmos tube
- triode
- arm
- input
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/08—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for dynamo-electric motors
- H02H7/0833—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for dynamo-electric motors for electric motors with control arrangements
- H02H7/0838—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for dynamo-electric motors for electric motors with control arrangements with H-bridge circuit
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P6/00—Arrangements for controlling synchronous motors or other dynamo-electric motors using electronic commutation dependent on the rotor position; Electronic commutators therefor
- H02P6/08—Arrangements for controlling the speed or torque of a single motor
- H02P6/085—Arrangements for controlling the speed or torque of a single motor in a bridge configuration
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
The invention relates to a brushless motor H-bridge drive circuit. The brushless motor H-bridge drive circuit is composed of two arm drive circuit bodies. The two arm drive circuit bodies are the same in circuit structure. In the left arm drive circuit body, an NMOS tube Q7 and an NMOS tube Q8 are connected between a power signal VCC2 and the ground in series, a corresponding source and a corresponding drain of the NMOS tube Q7 and the NMOS tube Q8 are connected, and the joint is set to be an output port of the left arm drive circuit body; the upper left arm input end of an upper-left and lower-right drive branch circuit is connected with the control end of the MOS tube Q7 through an MOS tube drive circuit; the lower left arm input end of a lower-left and upper-right drive branch circuit is connected to the control end of the MOS tube Q8 through an MOS tube drive circuit. Compared with the prior art, the brushless motor H-bridge drive circuit has the advantages that the circuit structure is simple, selected elements are common elements, and the circuit cost is effectively reduced; due to additionally-arranged protection units, the phenomenon that high levels occur at the upper arm input end and the lower arm input end at the same time can be effectively prevented, an electric tool can be prevented from being damaged, and the safety performance is high.
Description
Technical field
The present invention relates to field of power tools, specifically a kind of brushless electric machine H-bridge drive circuit.
Background technology
Along with the maturation gradually of brushless dc machine technology, the application of high-power brushless motor is more and more extensive.Existing brushless motor H bridge chip is in order to highly versatile, and design withstand voltage is higher, so cost is relatively high.Most of H-bridge drive circuit lacks protective circuit on the other hand, once occur that the input of upper underarm all occurs high level, power supply signal can be made directly to be connected to the ground and cause electric tool to be damaged, so this abnormal conditions are not allowed to occur.
Summary of the invention
For above-mentioned prior art, the technical problem to be solved in the present invention is to provide a kind of brushless electric machine H-bridge drive circuit, and fail safe is high and with low cost.
In order to solve the problem, brushless electric machine H-bridge drive circuit of the present invention, this circuit is made up of two-arm drive circuit, and the circuit structure of two-arm drive circuit is identical; In left arm drive circuit, NMOS tube Q7 and NMOS tube Q8 is connected between power supply signal VCC2 and ground, and the source electrode of its correspondence and drain interconnection also arrange the output port that this node is left arm drive circuit; Bottom right, upper left drives the left upper arm input of branch road to be connected to the control end of metal-oxide-semiconductor Q7 by a metal-oxide-semiconductor drive circuit; Lower-left upper right drives the lower-left arm input of branch road to be connected to the control end of metal-oxide-semiconductor Q8 by a metal-oxide-semiconductor drive circuit.
Preferably, in described metal-oxide-semiconductor drive circuit, input is connected to the base stage of triode Q1 by resistance R3, and triode Q1 is connected between power supply signal VCC1 and ground, and wherein the collector electrode of triode Q1 is connected with power supply signal VCC1 with diode D1 by pull-up resistor R1; Node between the collector electrode of triode Q1 and resistance R1 be connected to NMOS tube Q4 grid, be connected to the grid of PMOS Q3 by resistance R2 simultaneously, wherein the drain interconnection of PMOS Q3 and NMOS tube Q4 is in parallel with electric capacity C1, the source electrode of PMOS Q3 is connected to the negative electrode of diode D1, the source electrode of NMOS tube Q4 is connected to the source electrode of NMOS tube Q7, and the node between PMOS Q3 and NMOS tube Q4 is connected to the grid of NMOS tube Q7.
Preferably, also comprise and be connected to left upper arm input port and lower-left arm and input protected location between wide mouth.
Preferably, described protected location is provided with a triode Q9, and be connected between node between resistance R3 and triode Q1 base stage and ground, the base stage of triode Q9 is connected to the input port of lower-left arm by resistance R7.
Compared with prior art, tool of the present invention has the following advantages:
One, circuit structure is simple, and selected is universal component, effectively reduces circuit cost.
Two, the protected location increased can effectively prevent underarm input from occurring the phenomenon of high level simultaneously, and avoid electric tool to be damaged, security performance is high.
Accompanying drawing explanation
Fig. 1 is brushless electric machine H bridge left arm drive circuit schematic diagram of the invention process.
Fig. 2 is the brushless electric machine H bridge left arm drive circuit schematic diagram with defencive function.
Fig. 3 is brushless electric machine H-bridge drive circuit schematic diagram of the invention process.
Embodiment
In order to allow those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, the present invention is further elaborated.
As shown in FIG. 1 to 3, a kind of brushless electric machine H-bridge drive circuit, this circuit is made up of two-arm drive circuit the specific embodiment of the present invention, and the circuit structure of two-arm drive circuit is identical.
In left arm drive circuit, NMOS tube Q7 and NMOS tube Q8 is connected between power supply signal VCC2 and ground, the source electrode of its correspondence and drain interconnection also arrange the output port that this node is left arm drive circuit, it is characterized in that: bottom right, upper left drives the left upper arm input of branch road to be connected to the control end of metal-oxide-semiconductor Q7 by a metal-oxide-semiconductor drive circuit; Lower-left upper right drives the lower-left arm input of branch road to be connected to the control end of metal-oxide-semiconductor Q8 by a metal-oxide-semiconductor drive circuit.
In metal-oxide-semiconductor drive circuit for driving N metal-oxide-semiconductor Q7, input is connected to the base stage of triode Q1 by resistance R3, triode Q1 is connected between power supply signal VCC1 and ground, and wherein the collector electrode of triode Q1 is connected with power supply signal VCC1 with diode D1 by pull-up resistor R1; Node between the collector electrode of triode Q1 and resistance R1 be connected to NMOS tube Q4 grid, be connected to the grid of PMOS Q3 by resistance R2 simultaneously, wherein the drain interconnection of PMOS Q3 and NMOS tube Q4 is in parallel with electric capacity C1, the source electrode of PMOS Q3 is connected to the negative electrode of diode D1, the source electrode of NMOS tube Q4 is connected to the source electrode of NMOS tube Q7, and the node between PMOS Q3 and NMOS tube Q4 is connected to the grid of NMOS tube Q7.
In metal-oxide-semiconductor drive circuit for driving N metal-oxide-semiconductor Q8, input is connected to the base stage of triode Q2 by resistance R6, triode Q2 is connected between power supply signal VCC1 and ground, and wherein the collector electrode of triode Q2 is connected with power supply signal VCC1 by pull-up resistor R4; Node between the collector electrode of triode Q2 and resistance R4 be connected to NMOS tube Q6 grid, be connected to the grid of PMOS Q5 by resistance R5 simultaneously, be connected between power supply signal VCC1 and ground after the drain interconnection of wherein PMOS Q5 and NMOS tube Q6, the node between PMOS Q5 and NMOS tube Q6 is connected to the grid of NMOS tube Q8.
In right arm drive circuit, NMOS tube Q16 and NMOS tube Q17 is connected between power supply signal VCC2 and ground, and the source electrode of its correspondence and drain interconnection also arrange the output port that this node is right arm drive circuit; Lower-left upper right drives the right upper arm input of branch road to be connected to the control end of metal-oxide-semiconductor Q16 by a metal-oxide-semiconductor drive circuit; Bottom right, upper left drives the bottom right arm input of branch road to be connected to the control end of metal-oxide-semiconductor Q17 by a metal-oxide-semiconductor drive circuit.
In metal-oxide-semiconductor drive circuit for driving N metal-oxide-semiconductor Q16, input is connected to the base stage of triode Q10 by resistance R10, triode Q10 is connected between power supply signal VCC1 and ground, and wherein the collector electrode of triode Q10 is connected with power supply signal VCC1 with diode D2 by pull-up resistor R8; Node between the collector electrode of triode Q10 and resistance R8 be connected to NMOS tube Q13 grid, be connected to the grid of PMOS Q12 by resistance R9 simultaneously, wherein the drain interconnection of PMOS Q12 and NMOS tube Q13 is in parallel with electric capacity C2, the source electrode of PMOS Q12 is connected to the negative electrode of diode D2, the source electrode of NMOS tube Q13 is connected to the source electrode of NMOS tube Q16, and the node between PMOS Q12 and NMOS tube Q13 is connected to the grid of NMOS tube Q16.
In metal-oxide-semiconductor drive circuit for driving N metal-oxide-semiconductor Q17, input is connected to the base stage of triode Q11 by resistance R13, triode Q11 is connected between power supply signal VCC1 and ground, and wherein the collector electrode of triode Q11 is connected with power supply signal VCC1 by pull-up resistor R11; Node between the collector electrode of triode Q11 and resistance R11 be connected to NMOS tube Q15 grid, be connected to the grid of PMOS Q14 by resistance R12 simultaneously, be connected between power supply signal VCC1 and ground after the drain interconnection of wherein PMOS Q14 and NMOS tube Q15, the node between PMOS Q14 and NMOS tube Q15 is connected to the grid of NMOS tube Q17.
Also comprise the protected location be connected between left upper arm input port and lower-left arm input port and the protected location be connected between right upper arm input port and bottom right arm input port.
Protected location for left arm is provided with a triode Q9, and be connected between node between resistance R3 and triode Q1 base stage and ground, the base stage of triode Q9 is connected to the input port of lower-left arm by resistance R7.
Protected location for right arm is provided with a triode Q18, and be connected between node between resistance R10 and triode Q10 base stage and ground, the base stage of triode Q18 is connected to the input port of bottom right arm by resistance R14.
Wherein, the input signal arranging left upper arm is IN-H1, and the input signal of lower-left arm is IN-L1, and the input signal of right upper arm is IN-H2, and the input signal of bottom right arm is IN-L2, and the output signal of left arm is OUT-1, and the output signal of right arm is OUT-2.Output interface OUT-1 and OUT-2 receives the two ends of motor M.
The operation principle of this concrete implementing circuit is as follows:
When input interface IN-H1, IN-L2 are high level, when IN-L1, IN-H2 are low level, delivery outlet OUT-1 and VCC2 is connected, and delivery outlet OUT-2 and GND is connected.Electric current flows to OUT-2 by OUT-1 by motor M.When input interface IN-L1, IN-H2 are high level, when IN-H1, IN-L2 are low level, delivery outlet OUT-1 and GND is connected, and delivery outlet OUT-2 and VCC2 is connected.Electric current flows to OUT-1 by OUT-2.Therefore the electric current commutation of delivery outlet OUT-1 and OUT-2 can be realized by the level switching input port.The I/O port of single-chip microcomputer is controlled motor M by the signal of telecommunication IN-H and IN-L.
In left arm drive circuit, when input interface IN-L is low level, triode Q2 closes, and the input of NMOS tube Q6 can be drawn high and conducting by resistance R4, and the input of NMOS tube Q8 can be dragged down by NMOS tube Q6 and close; When input interface IN-L is high level, triode Q2 conducting, the input of PMOS Q5 can be dragged down and conducting by resistance R5, and the input of NMOS tube Q8 can be drawn high and conducting by PMOS Q5; Now output OUT-1 ground connection.When OUT-1 ground connection, VCC1 can be charged to electric capacity C1 by diode D1.
When input interface IN-H is low level, triode Q1 closes, and the input of NMOS tube Q4 can be drawn high and conducting by resistance R1, and the input of NMOS tube Q7 can be dragged down by NMOS tube Q4 and close; When input interface IN-H is high level, triode Q1 conducting, the input of PMOS Q3 can be dragged down and conducting by R2, and the input of NMOS tube Q7 can be drawn high and conducting by PMOS Q3; Now output OUT-1 is the voltage of VCC2.
Therefore, output OUT ground connection or the real-time conversion with power supply signal VCC2 can be realized by the level change of input IN-H, IN-L.
Because the circuit structure of two-arm drive circuit is identical, this sentences left arm drive circuit is that example is described, and the operation principle of right arm drive circuit is identical with the operation principle of left arm drive circuit, is not repeating.
In addition, the metal-oxide-semiconductor drive circuit that left upper arm is used for driving N metal-oxide-semiconductor Q7 is the driving voltage utilizing electric capacity C1 to raise NMOS tube Q7, makes the grid voltage of NMOS tube Q7 higher than power supply signal VCC2.Realizing principle is: instantly during pipe NMOS tube Q8 conducting, and OUT-1 end is connected to the ground, and power supply signal VCC1, by diode D1, charges to electric capacity C1.Electric capacity C1 both end voltage approximates power supply signal VCC1.When NMOS tube Q8 closes, when NMOS tube Q7 opens, OUT-1 is connected with power supply signal VCC2.The voltage that now grid voltage of NMOS tube Q7 equals power supply signal VCC2 adds the voltage of electric capacity C1.
Wherein, power supply signal VCC1 is the driving voltage needed for NMOS tube Q7 and NMOS tube Q8, generally between 12V ~ 18V.Power supply signal VCC2 is exactly the voltage needed for brushless electric machine M, and the voltage of brushless electric machine M nominal is higher, and power supply signal VCC2 is higher.So power supply signal VCC2 is generally greater than power supply signal VCC1.
When input interface IN-L and IN-H is high level simultaneously, NMOS tube Q7 and NMOS tube Q8 meeting conducting simultaneously, power supply signal VCC2 is directly connected to the ground, and causes the exception of circuit.So after adding protected location, when input interface IN-L is high level, the input of triode Q9 can be driven high and conducting, and the input of triode Q1 can be grounded.Even if IN-H is high level, triode Q1 is also in closed condition, and NMOS tube Q7 is also closed condition, thus the high level of input interface IN-H is converted to low level.Therefore there will not be NMOS tube Q7 and NMOS tube Q8 conducting simultaneously, cause the abnormal conditions that power supply signal VCC2 is directly connected with GND, effectively ensure the reliability of integrated circuit.
It should be noted that, in the present embodiment, do not launch the place of carrying out setting forth in detail, being those skilled in the art can realize according to existing common practise and practical experience.
The above is better embodiment of the present invention, not does any pro forma restriction to the present invention.It should be noted that; when not deviating from the present invention's spirit and essence thereof; those of ordinary skill in the art are when making various corresponding change and distortion according to the present invention, but these change and are out of shape the protection range that all should belong to the claim appended by the present invention.
Claims (4)
1. a brushless electric machine H-bridge drive circuit, this circuit is made up of two-arm drive circuit, and the circuit structure of two-arm drive circuit is identical; In left arm drive circuit, NMOS tube Q7 and NMOS tube Q8 is connected between power supply signal VCC2 and ground, the source electrode of its correspondence and drain interconnection also arrange the output port that this node is left arm drive circuit, it is characterized in that: bottom right, upper left drives the left upper arm input of branch road to be connected to the control end of metal-oxide-semiconductor Q7 by a metal-oxide-semiconductor drive circuit; Lower-left upper right drives the lower-left arm input of branch road to be connected to the control end of metal-oxide-semiconductor Q8 by a metal-oxide-semiconductor drive circuit.
2. brushless electric machine H-bridge drive circuit according to claim 1, it is characterized in that, in described metal-oxide-semiconductor drive circuit, input is connected to the base stage of triode Q1 by resistance R3, triode Q1 is connected between power supply signal VCC1 and ground, and wherein the collector electrode of triode Q1 is connected with power supply signal VCC1 with diode D1 by pull-up resistor R1; Node between the collector electrode of triode Q1 and resistance R1 be connected to NMOS tube Q4 grid, be connected to the grid of PMOS Q3 by resistance R2 simultaneously, in parallel with electric capacity C1 after the drain interconnection of wherein PMOS Q3 and NMOS tube Q4, the source electrode of PMOS Q3 is connected to the negative electrode of diode D1, the source electrode of NMOS tube Q4 is connected to the source electrode of NMOS tube Q7, and the node between PMOS Q3 and NMOS tube Q4 is connected to the grid of NMOS tube Q7.
3. brushless electric machine H-bridge drive circuit according to claim 2, is characterized in that, also comprises being connected to left upper arm input port and lower-left arm and inputting protected location between wide mouth.
4. brushless electric machine H-bridge drive circuit according to claim 3; it is characterized in that; described protected location is provided with a triode Q9, and be connected between node between resistance R3 and triode Q1 base stage and ground, the base stage of triode Q9 is connected to the input port of lower-left arm by resistance R7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410752077.4A CN104467559A (en) | 2014-12-11 | 2014-12-11 | Brushless motor H-bridge drive circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410752077.4A CN104467559A (en) | 2014-12-11 | 2014-12-11 | Brushless motor H-bridge drive circuit |
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| CN104467559A true CN104467559A (en) | 2015-03-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410752077.4A Pending CN104467559A (en) | 2014-12-11 | 2014-12-11 | Brushless motor H-bridge drive circuit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105655980A (en) * | 2016-03-23 | 2016-06-08 | 南京双环电器股份有限公司 | Protection control circuit of electric extinguisher |
| CN106803729A (en) * | 2015-11-26 | 2017-06-06 | 国家电网公司 | Self-shield direct current motor drive circuit and direct current drive twist grinding machine |
| CN108667362A (en) * | 2016-04-21 | 2018-10-16 | 惠安县信达友工业设计有限公司 | A kind of method that motor control is driven with metal-oxide-semiconductor |
| CN111682503A (en) * | 2020-06-17 | 2020-09-18 | 苏州纳芯微电子股份有限公司 | Undervoltage protection circuit |
-
2014
- 2014-12-11 CN CN201410752077.4A patent/CN104467559A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106803729A (en) * | 2015-11-26 | 2017-06-06 | 国家电网公司 | Self-shield direct current motor drive circuit and direct current drive twist grinding machine |
| CN105655980A (en) * | 2016-03-23 | 2016-06-08 | 南京双环电器股份有限公司 | Protection control circuit of electric extinguisher |
| CN108667362A (en) * | 2016-04-21 | 2018-10-16 | 惠安县信达友工业设计有限公司 | A kind of method that motor control is driven with metal-oxide-semiconductor |
| CN111682503A (en) * | 2020-06-17 | 2020-09-18 | 苏州纳芯微电子股份有限公司 | Undervoltage protection circuit |
| WO2021253704A1 (en) * | 2020-06-17 | 2021-12-23 | 苏州纳芯微电子股份有限公司 | Under-voltage protection circuit |
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Application publication date: 20150325 |