CN113809730A - High-voltage direct-current input reverse connection protection circuit - Google Patents
High-voltage direct-current input reverse connection protection circuit Download PDFInfo
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- CN113809730A CN113809730A CN202111310088.3A CN202111310088A CN113809730A CN 113809730 A CN113809730 A CN 113809730A CN 202111310088 A CN202111310088 A CN 202111310088A CN 113809730 A CN113809730 A CN 113809730A
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- direct current
- reverse connection
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- 239000003990 capacitor Substances 0.000 claims abstract description 33
- 238000004146 energy storage Methods 0.000 claims abstract description 30
- 230000002265 prevention Effects 0.000 claims abstract description 24
- 230000002457 bidirectional effect Effects 0.000 claims description 8
- 229910044991 metal oxide Inorganic materials 0.000 abstract 2
- 150000004706 metal oxides Chemical class 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 101100100146 Candida albicans NTC1 gene Proteins 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H11/00—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result
- H02H11/002—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
- H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
- H02H7/1213—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for DC-DC converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Emergency Protection Circuit Devices (AREA)
- Direct Current Feeding And Distribution (AREA)
Abstract
The invention discloses a reverse connection protection circuit for high-voltage direct-current input, which comprises a reverse connection prevention overshoot protection circuit, an MOS (metal oxide semiconductor) tube driving circuit, an auxiliary source power supply circuit, an energy storage capacitor and a single chip microcomputer, wherein the main circuit comprises a direct-current input end, and the reverse connection prevention overshoot protection circuit comprises two NMOSs (N-channel metal oxide semiconductors) and a charging resistor; the auxiliary source power supply circuit is powered by an energy storage capacitor, and a power supply pin of the singlechip is connected with the output end of the auxiliary source power supply circuit; the positive electrode of the energy storage capacitor is connected with the positive electrode of the direct current input end, and the two NMOSs are connected between the negative electrode of the energy storage capacitor and the negative electrode of the direct current input end after being connected in series in a reverse direction; the control end of the MOS tube driving circuit is connected with the control signal output end of the singlechip, and the grids of the two NMOSs are connected with the driving signal output end of the MOS tube driving circuit; the charging resistor is connected in parallel with the NMOS which is connected positively. The invention has the functions of reverse connection prevention and overshoot prevention, has small impact current when starting up, and has low power loss when the main circuit normally runs.
Description
Technical Field
The invention relates to direct current input protection of a DC-DC power supply, in particular to a reverse connection protection circuit for high-voltage direct current input.
Background
In the DC-DC power supply, a protection circuit of a DC power supply input comprises an anti-reverse connection protection circuit.
Under normal conditions, the input reverse connection prevention protection of the direct current power supply is realized by utilizing the unidirectional conductivity of a diode, and a diode reverse connection prevention protection circuit is shown in fig. 1, has simple and reliable structure and low cost, but has quite large loss on the diode under the condition of inputting large current. For example, the input current rating is 14A, the diode drop is typically 0.7V, and the losses on the diode are at least: pd is 14A × 0.7V or 9.8W, which not only generates heat seriously and needs a heat sink to assist heat dissipation, but also has a considerable influence on circuit efficiency. The diode reverse connection prevention protection circuit is only suitable for circuits with low current and low efficiency requirement.
The MOS tube type reverse connection prevention protection circuit realizes reverse connection prevention protection by utilizing the characteristic of an internal body diode of the MOS tube, and can solve the problems of overlarge voltage drop and power consumption in a reverse connection prevention scheme of a diode power supply because the internal resistance of the MOS tube can be in the milliohm level at present.
As shown in fig. 2, the reverse polarity protection connects the field effect transistor for protection in series with the circuit to be protected. When the input voltage is reversely connected, the MOS-FET body diode characteristic can make the circuit form short circuit, so as to prevent the current from burning the field effect transistor element in the circuit and protect the whole circuit.
However, the circuit shown in fig. 2 is very easy to ignite during the on/off operation, and the surge current at the high-voltage input is very large, which causes damage to devices such as MOS-FETs.
Disclosure of Invention
The invention aims to provide a high-voltage direct-current input reverse connection protection circuit with a small impact current when a main circuit is started.
In order to solve the technical problems, the invention adopts the technical scheme that the high-voltage direct-current input reverse connection protection circuit comprises a reverse connection prevention overshoot protection circuit, an MOS tube driving circuit, an auxiliary source power supply circuit, an energy storage capacitor and a single chip microcomputer, wherein the main circuit comprises a direct-current input end, and the reverse connection prevention overshoot protection circuit comprises two NMOSs and a charging resistor; the auxiliary source power supply circuit is powered by an energy storage capacitor, and a power supply pin of the singlechip is connected with the output end of the auxiliary source power supply circuit; the positive electrode of the energy storage capacitor is connected with the positive electrode of the direct current input end, and the two NMOSs are connected between the negative electrode of the energy storage capacitor and the negative electrode of the direct current input end after being connected in series in a reverse direction; the control end of the MOS tube driving circuit is connected with the control signal output end of the singlechip, and the grids of the two NMOSs are connected with the driving signal output end of the MOS tube driving circuit; the charging resistor is connected in parallel with the NMOS which is connected positively.
In the reverse connection protection circuit for the high-voltage direct-current input, the drain electrode of the first NMOS is connected with the negative electrode of the energy storage capacitor, the source electrode of the second NMOS is connected with the source electrode of the first NMOS, and the drain electrode of the second NMOS is connected with the positive electrode of the direct-current input end; the charging resistor is a thermistor, and the thermistor is connected with the first NMOS in parallel.
In the reverse connection protection circuit for high-voltage direct-current input, the NMOS comprises a plurality of N-channel MOS transistors connected in parallel.
The MOS tube driving circuit comprises a triode and a relay; one end of the relay coil is connected with the positive electrode of the output end of the auxiliary power supply circuit, the other end of the relay coil is connected with the collector of the triode, the base of the triode is used as the control end of the MOS tube driving circuit and is connected with the control signal output end of the singlechip, and the emitter of the triode is grounded; the first end of the normally open contact of the relay is connected with the positive electrode of the output end of the auxiliary power supply circuit, and the second end of the normally open contact of the relay is used as the driving signal output end of the MOS tube driving circuit and is connected with the grid electrode of the anti-reverse anti-overshoot circuit NMOS.
The source electrode of the NMOS is connected with the grid electrode of the NMOS through the normally closed contact of the relay.
The MOS tube driving circuit comprises a driving circuit corresponding to the NMOS, and the driving circuit comprises a grid resistor, a pull-down resistor and a bidirectional voltage-stabilizing tube; the grid resistor is connected between the second end of the normally open contact of the relay and the grid of the corresponding NMOS; the pull-down resistor is connected between the grid and the source of the corresponding NMOS, and the bidirectional voltage-stabilizing tube is connected with the corresponding pull-down resistor in parallel.
When the main circuit is started, the high-voltage direct-current voltage is input from the direct-current input end of the main circuit to charge the energy storage capacitor, the charging voltage of the energy storage capacitor reaches a set value, the auxiliary source power supply circuit, the single chip microcomputer and the relay do not work, and the NMOS is in a turn-off state; the charging current input by the positive pole of the direct current input end of the main circuit flows back to the negative pole of the direct current input end through the energy storage electrolytic capacitor, the thermistor connected with the first NMOS in parallel and the body diode of the second NMOS, and the thermistor plays a role in preventing overshoot during starting.
According to the reverse connection protection circuit for the high-voltage direct current input, when the main circuit is started and the direct current input end is in wrong connection with the reverse high-voltage direct current voltage, the auxiliary source power supply circuit, the single chip microcomputer and the relay do not work, the NMOS is in a turn-off state, and the body diode of the second NMOS is in a cut-off state, so that the reverse connection prevention effect during starting is achieved.
The reverse connection protection circuit for high-voltage direct-current input has reverse connection prevention and overshoot prevention functions, has small impact current when starting up, and has low power loss when a main circuit normally runs.
Drawings
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Fig. 1 is a circuit diagram of a reverse protection circuit for a prior art high voltage dc input.
Fig. 2 is another circuit diagram of a reverse protection circuit for a prior art high voltage dc input.
Fig. 3 is a circuit diagram of a reverse connection protection circuit for high voltage dc input according to an embodiment of the present invention.
Detailed Description
The structure and the principle of the high-voltage direct-current input reverse connection protection circuit of the embodiment of the invention are shown in fig. 3, and the high-voltage direct-current input reverse connection protection circuit comprises a reverse connection prevention overshoot prevention circuit, an MOS tube driving circuit, an auxiliary source power supply circuit, an energy storage capacitor C137 and a single chip microcomputer.
The main circuit comprises a direct current input end, the direct current input end comprises a positive electrode +480VVIN of the direct current input end, a negative electrode 480VRTN of the direct current input end and an input filter circuit consisting of two-stage common-mode inductors LX1 and LX2, filter capacitors C253 and C258, and capacitors CY2, CY3, CY4 and CY5 to ground, the connection point of CY2 and CY3 is grounded AGND, and the connection point of CY4 and CY5 is grounded AGND; AGND is connected to the housing by screws.
The anti-reverse-connection anti-overshoot circuit comprises two NMOS switches and a thermistor NTC1 serving as a charging resistor of an energy storage capacitor, wherein the first NMOS switch comprises N-channel MOS transistors Q15 and Q22 which are connected in parallel, and the second NMOS switch comprises N-channel MOS transistors Q26 and Q23 which are connected in parallel
The auxiliary power supply circuit mainly takes a PWM controller TNY286D as a main IC, and adopts a power supply circuit of 140: 27 of the transformer. The auxiliary power supply circuit is powered by the energy storage capacitor C137.
The power supply pin of the singlechip is connected with the output end of the auxiliary power supply circuit. The anode of the energy storage capacitor C137 is connected with the anode of the direct current input end by +480VVIN through the input filter circuit, and the two NMOS switches are connected between the cathode of the energy storage capacitor C137 and the cathode of the direct current input end by 480VRTN after being connected in series in a reverse direction. The control end of the MOS tube driving circuit is connected with the control signal output end RLY of the single chip microcomputer, and the grids of the two NMOS switches are connected with the driving signal output end of the MOS tube driving circuit. The thermistor NTC1 is connected in parallel with the NMOS switches (NMOS transistors Q15 and Q22) that are being connected.
As shown in fig. 3, the drains of the NMOS transistors Q15 and Q22 are connected to the negative electrode of the energy storage capacitor C137, the sources of the switches of the NMOS transistors Q26 and Q23 are connected to the sources of the NMOS transistors Q15 and Q22, and the drains of the switches of the NMOS transistors Q26 and Q23 are connected to the positive electrode +480VVIN of the dc input terminal. The thermistor NTC1 is connected in parallel with the NMOS transistors Q15 and Q22.
The MOS tube driving circuit comprises an NPN transistor Q63 and a relay RLY 1. One end of the coil of the relay RLY1 is connected with the positive electrode VCCDC of the output end of the auxiliary power supply circuit, the other end is connected with the collector of an NPN triode Q63 through current limiting resistors R29 and R160, the base of the NPN triode Q63 is used as the control end of the MOS tube driving circuit and is connected with the control signal output end RLY of the single chip microcomputer through a resistor R34, and the emitter of the NPN triode Q63 is connected with the input ground GND. The first end of a normally open contact of the relay RLY1 is connected with the positive electrode VCCDC of the output end of the auxiliary power supply circuit through the current limiting resistor R26 and the diode D26, and the second end of the normally open contact of the relay RLY1 is used as the driving signal output end of the MOS tube driving circuit and is connected with the grid of the NMOS switch of the anti-reverse-connection overshoot prevention circuit.
The sources of all NMOS transistors are connected with the gates of the NMOS transistors through the normally closed contact of the relay RLY1, and the capacitor C74 is connected in parallel with the normally closed contact of RLY 1.
The MOS tube driving circuit comprises a driving circuit corresponding to the NMOS switch.
The first drive circuit includes gate resistors R156 and R157, a pull-down resistor R194, and a bidirectional regulator tube Z1. The gate resistors R156 and R157 are connected between the second end of the normally open contact of the relay RLY1 and the gates of the NMOS transistors Q15 and Q22. The pull-down resistor R194 is connected between the grid electrodes and the source electrodes of the NMOS tubes Q15 and Q22, and the bidirectional voltage regulator tube Z1 is connected with the pull-down resistor R194 in parallel.
The second driving circuit comprises gate resistors R62 and R98, a pull-down resistor R161 and a bidirectional voltage regulator tube Z2. The gate resistors R62 and R98 are connected between the second end of the normally open contact of the relay RLY1 and the gates of the NMOS transistors Q26 and Q23. The pull-down resistor R161 is connected between the grid and the source of the NMOS transistors Q26 and Q23, and the bidirectional voltage regulator tube Z2 is connected with the pull-down resistor R161 in parallel.
When the main circuit is started, high-voltage direct-current voltage is input from the direct-current input end of the main circuit, the charging voltage of the energy storage capacitor C137 does not reach a set value, the auxiliary source power supply circuit, the single chip microcomputer and the relay do not start to work, the grid levels of the NMOS tubes Q15, Q22, Q23 and Q26 are pulled down, and the NMOS tubes Q15, Q22, Q23 and Q26 are in a turn-off state. The charging current input by the positive electrode +480VVIN of the direct current input end of the main circuit passes through the energy storage electrolytic capacitor, the thermistor NTCI connected with the NMOS tubes Q15 and Q22 in parallel and the NMOS tube Q23, and the body diode of the Q26 flows back to the negative electrode 480VRTN of the direct current input end. The resistance value of the thermistor NTC1 is 8 omega, the overshoot prevention effect is achieved when the computer is started, and the overshoot prevention effect is better when the value of the thermistor is larger.
When the charging voltage of the energy storage capacitor C137 reaches a set value, the auxiliary source power supply circuit starts to work, the base electrode of the triode Q63 is sent with a high level after the single chip microcomputer is powered on, the triode Q63 is switched on, the relay RLY1 is controlled to work, the levels of the grids of the NMOS transistors Q15, Q22, Q23 and Q26 are converted into the high level, and the NMOS transistors Q15, Q22, Q23 and Q26 are switched on. The working current input by the positive electrode +480VVIN of the direct current input end of the main circuit flows through the NMOS tubes Q15 and Q22 and the NMOS tubes Q23 and Q26 to return to the negative electrode 480VRTN of the direct current input end, and the working loss of the main circuit is greatly reduced.
When the main circuit is started, and the direct current input end is in misconnection with reverse high-voltage direct current voltage, no charging voltage exists because the energy storage capacitor C137 is not charged, the auxiliary source power supply circuit, the single chip microcomputer and the relay do not work, the NMOS tubes Q15, Q22, Q23 and Q26 are in an off state, and the NMOS tubes Q23 and Q26 diodes are also in an off state, so that the effect of preventing reverse connection is achieved.
The high-voltage direct-current input reverse connection protection circuit has the advantages of reverse connection prevention and overshoot prevention, small impact current during starting, low power loss during normal operation of a main circuit, simplicity, maturity, and wide application prospect.
Claims (8)
1. A high-voltage direct-current input reverse connection protection circuit comprises a main circuit and a direct-current input end, and is characterized by comprising a reverse connection prevention overshoot circuit, an MOS tube driving circuit, an auxiliary source power supply circuit, an energy storage capacitor and a single chip microcomputer, wherein the reverse connection prevention overshoot circuit comprises two NMOSs and a charging resistor; the auxiliary source power supply circuit is powered by an energy storage capacitor, and a power supply pin of the singlechip is connected with the output end of the auxiliary source power supply circuit; the positive electrode of the energy storage capacitor is connected with the positive electrode of the direct current input end, and the two NMOSs are connected between the negative electrode of the energy storage capacitor and the negative electrode of the direct current input end after being connected in series in a reverse direction; the control end of the MOS tube driving circuit is connected with the control signal output end of the singlechip, and the grids of the two NMOSs are connected with the driving signal output end of the MOS tube driving circuit; the charging resistor is connected in parallel with the NMOS which is connected positively.
2. The reverse connection protection circuit of the high-voltage direct current input according to claim 1, wherein the drain electrode of the first NMOS is connected with the negative electrode of the energy storage capacitor, the source electrode of the second NMOS is connected with the source electrode of the first NMOS, and the drain electrode of the second NMOS is connected with the positive electrode of the direct current input end; the charging resistor is a thermistor, and the thermistor is connected with the first NMOS in parallel.
3. The reverse connection protection circuit of high-voltage direct current input of claim 1, wherein the NMOS comprises a plurality of N-channel MOS tubes connected in parallel.
4. The reverse connection protection circuit of the high-voltage direct current input according to claim 2, wherein the MOS tube driving circuit comprises a triode and a relay; one end of the relay coil is connected with the positive electrode of the output end of the auxiliary power supply circuit, the other end of the relay coil is connected with the collector of the triode, the base of the triode is used as the control end of the MOS tube driving circuit and is connected with the control signal output end of the singlechip, and the emitter of the triode is grounded; the first end of the normally open contact of the relay is connected with the positive electrode of the output end of the auxiliary power supply circuit, and the second end of the normally open contact of the relay is used as the driving signal output end of the MOS tube driving circuit and is connected with the grid electrode of the anti-reverse anti-overshoot circuit NMOS.
5. The reverse connection protection circuit of the high-voltage direct current input of claim 4 is characterized in that the source electrode of the NMOS is connected with the grid electrode of the NMOS through the normally closed contact of the relay.
6. The high-voltage direct current input reverse connection protection circuit according to claim 4, wherein the MOS tube driving circuit comprises a driving circuit corresponding to an NMOS, and the driving circuit comprises a grid resistor, a pull-down resistor and a bidirectional voltage regulator tube; the grid resistor is connected between the second end of the normally open contact of the relay and the grid of the corresponding NMOS; the pull-down resistor is connected between the grid and the source of the corresponding NMOS, and the bidirectional voltage-stabilizing tube is connected with the corresponding pull-down resistor in parallel.
7. The reverse connection protection circuit of the high-voltage direct current input according to claim 5, characterized in that when the main circuit is started, the high-voltage direct current voltage is input from the direct current input end of the main circuit to charge the energy storage capacitor, the charging voltage of the energy storage capacitor reaches a set value, the auxiliary power supply circuit, the single chip microcomputer and the relay do not work, and the NMOS is in a turn-off state; the charging current input by the positive pole of the direct current input end of the main circuit flows back to the negative pole of the direct current input end through the energy storage electrolytic capacitor, the thermistor connected with the first NMOS in parallel and the body diode of the second NMOS, and the thermistor plays a role in preventing overshoot during starting.
8. The reverse connection protection circuit of the high-voltage direct current input according to claim 5, characterized in that when the main circuit is started and the direct current input end is misconnected with the reverse high-voltage direct current voltage, the auxiliary power supply circuit, the single chip microcomputer and the relay do not work, the NMOS is in a turn-off state, and the body diode of the second NMOS is in a turn-off state, so that the reverse connection protection circuit of the starting is realized.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111310088.3A CN113809730B (en) | 2021-11-08 | 2021-11-08 | Reverse connection protection circuit for high-voltage direct current input |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111310088.3A CN113809730B (en) | 2021-11-08 | 2021-11-08 | Reverse connection protection circuit for high-voltage direct current input |
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| Publication Number | Publication Date |
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| CN113809730A true CN113809730A (en) | 2021-12-17 |
| CN113809730B CN113809730B (en) | 2024-08-27 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202111310088.3A Active CN113809730B (en) | 2021-11-08 | 2021-11-08 | Reverse connection protection circuit for high-voltage direct current input |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116667303A (en) * | 2023-07-28 | 2023-08-29 | 深圳市高斯宝电气技术有限公司 | Input anti-reverse connection circuit of DC power supply |
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| JP2007082374A (en) * | 2005-09-16 | 2007-03-29 | Denso Corp | Protection circuit on reverse connection of power supply |
| CN201393327Y (en) * | 2009-04-23 | 2010-01-27 | 青海新能源(集团)有限公司 | Commercial power supplementing type photovoltaic double-line illumination controlling device in extremely cold area |
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| CN116667303A (en) * | 2023-07-28 | 2023-08-29 | 深圳市高斯宝电气技术有限公司 | Input anti-reverse connection circuit of DC power supply |
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| CN113809730B (en) | 2024-08-27 |
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