CN218526302U - High-power electronic switch with high-precision overcurrent protection function - Google Patents
High-power electronic switch with high-precision overcurrent protection function Download PDFInfo
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- CN218526302U CN218526302U CN202222259292.3U CN202222259292U CN218526302U CN 218526302 U CN218526302 U CN 218526302U CN 202222259292 U CN202222259292 U CN 202222259292U CN 218526302 U CN218526302 U CN 218526302U
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Abstract
The utility model discloses a high-power electronic switch with high accuracy current protect function, including electronic switch, electronic switch includes high accuracy current protection circuit, fuse group, NMOS nest of tubes, punctures protection circuit, booster power, drive circuit and MCU microcontroller, and electronic switch has 4 pins, and 4 pins are SGIN pin, VIN pin, VO pin, GND pin respectively; VIN pin is connected to battery BAT's positive pole, GND pin is connected to battery BAT's negative pole, and VO pin is connected to LOAD's one end, and LOAD's the other end is connected to battery BAT's negative pole equally, and SGIN pin is connected to external control signal. The utility model discloses a high-power electronic switch with high accuracy overcurrent protection function has solved traditional electronic switch current-carrying capacity and power capacity and all is smaller, be unfavorable for miniaturization and low cost design, be difficult to realize comparatively accurate overcurrent protection, do not possess the problem of puncture protect function when taking place PMOS pipe breakdown phenomenon.
Description
Technical Field
The utility model belongs to the technical field of electronic switch's technique and specifically relates to a high-power electronic switch with high accuracy overcurrent protect function is related to.
Background
When the mechanical switch is switched on and off, the contact of the mechanical switch can be eroded by electric arc for a long time, and the performance of the mechanical switch is gradually reduced along with the lengthening of working time, which shows that the on-resistance is greatly improved, and even the mechanical switch cannot be switched off.
Electronic relays, solid-state relays, and the like employ semiconductor devices as electronic switches of switch actuators, and no arc, no contact erosion, or the like occurs when switching states, and replacement of mechanical switches has been achieved in many fields. However, the conventional electronic switch usually adopts PMOS transistors as the switching devices, so the current-carrying capacity and the power capacity are both small, and the number of the PMOS transistors used is large, which is not favorable for miniaturization and low-cost design.
In addition, the traditional electronic switch usually adopts a method for detecting the conduction voltage drop of the PMOS transistor to realize overcurrent protection, but the conduction voltage drop of the PMOS transistor is greatly influenced by temperature, parasitic parameters and the like, and the detection voltage level is low, so that more accurate overcurrent protection is difficult to realize. Moreover, when the breakdown phenomenon of the PMOS transistor occurs in the conventional electronic switch, the conventional electronic switch does not have the breakdown protection function, so that the load is in a working loop for a long time and is damaged.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model is not enough to above-mentioned prior art, and provide a high-power electronic switch with high accuracy overcurrent protect function, when providing great power capacity, use the less semiconductor device of quantity, size and cost have obvious advantage to possess high accuracy overcurrent protect function and puncture protect function simultaneously, it is more stable than traditional PMOS pipe electronic switch work.
In order to achieve the above object, the specific technical solution of the high-power electronic switch with high-precision overcurrent protection function of the present invention is as follows:
a high-power electronic switch with a high-precision overcurrent protection function comprises an electronic switch, wherein the electronic switch comprises a high-precision overcurrent protection circuit, a fuse set, an NMOS tube set, a breakdown protection circuit, a boosting power supply, a driving circuit and an MCU (micro control unit), and the electronic switch is provided with 4 pins which are respectively an SGIN pin, a VIN pin, a VO pin and a GND pin;
the VIN pin is connected to the anode of the battery BAT, the GND pin is connected to the cathode of the battery BAT, the VO pin is connected to one end of the LOAD, the other end of the LOAD is also connected to the cathode of the battery BAT, and the SGIN pin is connected to an external control signal.
Further, the high-precision overcurrent protection circuit comprises a shunt R1, a shunt R2, a shunt R3, a shunt R4, a shunt R5, a shunt R6, a shunt monitor CSA1, a pull-down resistor R7, a current-limiting resistor R8, a voltage regulator tube Z1 and a filter capacitor C1;
one end of the shunt R1, the shunt R2, the shunt R3, the shunt R4, the shunt R5 and the shunt R6 are connected together in short and connected to the positive input of the shunt monitor CSA 1;
the other ends of the shunt R1, the shunt R2, the shunt R3, the shunt R4, the shunt R5 and the shunt R6 are connected together in a short circuit mode, connected to the negative input of the shunt monitor CSA1 and connected to the input end of the fuse set;
the output end of the shunt monitor CSA1 is respectively connected to a GND pin and a 2-pin of the MCU through a pull-down resistor R7 and a current-limiting resistor R8;
one end of a voltage-stabilizing tube Z1 is in short circuit with one end of a filter capacitor C1 and is connected to a pin 2 of the MCU;
the other end of the voltage-regulator tube Z1 is in short circuit with the other end of the filter capacitor C1 and is connected with a GND pin.
Further, the fuse set comprises a fuse FU1, a fuse FU2, a fuse FU3, a fuse FU4, a fuse FU5 and a fuse FU6;
one ends of the fuse FU1, the fuse FU2, the fuse FU3, the fuse FU4, the fuse FU5 and the fuse FU6 are connected together in a short circuit mode and serve as the input end of the fuse set to be connected with the high-precision overcurrent protection circuit;
fuse FU1, fuse FU2, fuse FU3, fuse FU4, fuse FU5 and fuse FU 6's other end short-circuit connects together, is connected to the input of NMOS nest of tubes as the output of fuse group.
Further, the NMOS tube group comprises an NMOS tube S1 and an NMOS tube S2;
the drain electrodes of the NMOS tube S1 and the NMOS tube S2 are connected together in a short circuit mode and serve as the input end of the NMOS tube group to be connected with the fuse group;
the source electrodes of the NMOS tube S1 and the NMOS tube S2 are connected to a VO pin in a short-circuit mode;
the gates of the NMOS transistor S1 and the NMOS transistor S2 are shorted together and connected to the output terminal of the driving circuit.
Further, the breakdown protection circuit comprises an NMOS tube S3 and a driving resistor R9;
the drain electrode of the NMOS tube S3 is connected to the VO pin, the source electrode of the NMOS tube S3 is connected to the GND pin, and the grid electrode of the NMOS tube S3 is connected to the 5 pins of the MCU micro controller through the driving resistor R9.
Further, the boosting power supply comprises a boosting inductor L1, a boosting diode D1, an NMOS (N-channel metal oxide semiconductor) tube S4, a driving resistor R10 and an output capacitor C2;
one end of the boosting inductor L1 is connected to the VIN pin, and the other end of the boosting inductor L1 is connected to the anode of the boosting diode D1;
the common end of the boosting inductor L1 and the boosting diode D1 is connected to the drain electrode of the NMOS tube S4;
the grid electrode of the NMOS tube S4 is connected to a 3 pin of the MCU through a driving resistor R10;
the cathode of the boost diode D1 is connected to one end of the output capacitor C2, and the other end of the output capacitor C2 is connected to the GND pin;
the common end of the boost diode D1 and the output capacitor C2 is connected to the output end of the drive circuit.
Further, the driving circuit comprises an optocoupler OC1, a voltage regulator tube Z2, a current limiting resistor R11 and a current limiting resistor R12;
the anode of the optocoupler OC1 is connected to the 5 pins of the MCU, and the cathode of the optocoupler OC1 is connected to a GND pin through a current-limiting resistor R11;
the collector of the optocoupler OC1 is in short circuit with the cathode of the voltage regulator tube Z2 to serve as the output end of the driving circuit, and the output end of the driving circuit is connected with the NMOS tube group and the boosting power supply respectively;
and an emitter of the optical coupler OC1 is connected with the VO pin after being in short circuit with an anode of the voltage regulator tube Z2, and is connected to the GND pin through a current-limiting resistor R12.
Compared with the prior art, the beneficial effects of the utility model are that:
the utility model discloses a high-power electronic switch with high-precision overcurrent protection function, the high-precision overcurrent protection circuit adopts a diverter and a diverter detector structure to provide the electronic switch with high-precision overcurrent protection function; the fuse set and the breakdown protection circuit jointly provide a breakdown protection function for the electronic switch; the use of the NMOS tube group improves the power capacity of the electronic switch, and reduces the size and the cost; the boosting power supply and the driving circuit jointly realize the driving of the NMOS tube group.
Drawings
Fig. 1 is a circuit diagram of a high-power electronic switch with high-precision overcurrent protection function according to the present invention;
the symbols in the figure illustrate: 1. an electronic switch; 2. a high-precision overcurrent protection circuit; 3. a fuse set; 4. an NMOS tube group; 5. a breakdown protection circuit; 6. a boost power supply; 7. a drive circuit.
Detailed Description
In order to better understand the purpose, structure and function of the present invention, the following description is made in detail with reference to the accompanying drawings and the preferred embodiments for a high power electronic switch with high precision overcurrent protection function.
Example 1:
referring to fig. 1, the present invention provides a technical solution: a high-power electronic switch with a high-precision overcurrent protection function comprises an electronic switch 1, wherein the electronic switch 1 comprises a high-precision overcurrent protection circuit 2, a fuse group 3, an NMOS tube group 4, a breakdown protection circuit 5, a boosting power supply 6, a driving circuit 7 and an MCU microcontroller, the electronic switch 1 is provided with 4 pins, and the 4 pins are an SGIN pin, a VIN pin, a VO pin and a GND pin respectively;
the VIN pin is connected to the anode of the battery BAT, the GND pin is connected to the cathode of the battery BAT, the VO pin is connected to one end of the LOAD, the other end of the LOAD is also connected to the cathode of the battery BAT, and the SGIN pin is connected to an external control signal;
the electronic switch 1 is switched on and off under the control of an external control signal, and output and stop are realized at the VO pin, so that the function of controlling whether the LOAD LOAD is connected to a working loop is realized.
Further, the high-precision overcurrent protection circuit 2 comprises a shunt R1, a shunt R2, a shunt R3, a shunt R4, a shunt R5, a shunt R6, a shunt monitor CSA1, a pull-down resistor R7, a current-limiting resistor R8, a voltage regulator tube Z1 and a filter capacitor C1;
one end of the shunt R1, the shunt R2, the shunt R3, the shunt R4, the shunt R5 and the shunt R6 are connected together in short and connected to the positive input of the shunt monitor CSA 1;
the other ends of the shunt R1, the shunt R2, the shunt R3, the shunt R4, the shunt R5 and the shunt R6 are connected in short, connected to the negative input of the shunt monitor CSA1 and connected to the input end of the fuse set 3;
the output end of the shunt monitor CSA1 is respectively connected to a GND pin and a 2 pin of the MCU through a pull-down resistor R7 and a current-limiting resistor R8;
one end of a voltage-stabilizing tube Z1 is in short circuit with one end of a filter capacitor C1 and is connected to a pin 2 of the MCU;
the other end of the voltage-regulator tube Z1 is in short circuit with the other end of the filter capacitor C1 and is connected with a GND pin;
the voltage and the current at the two ends of the shunt are in a linear relation, and after the shunt monitor CSA1 is amplified, the MCU micro-controller can accurately calculate the current according to the voltage value at the pin 2, so that the high-precision overcurrent protection function is realized. When the NMOS pipe group 4 is turned off, the output voltage of the shunt monitor CSA1 exceeds the bearing capacity of the MCU, and at the moment, a voltage stabilizing circuit formed by the current limiting resistor R8 and the voltage stabilizing tube Z1 can clamp the pin voltage of the MCU to a lower level, so that the damage of the MCU is avoided.
Further, the fuse set 3 comprises a fuse FU1, a fuse FU2, a fuse FU3, a fuse FU4, a fuse FU5 and a fuse FU6;
one ends of the fuse FU1, the fuse FU2, the fuse FU3, the fuse FU4, the fuse FU5 and the fuse FU6 are connected together in a short circuit mode and serve as the input end of the fuse set 3 to be connected with the high-precision overcurrent protection circuit 2;
the other ends of the fuse FU1, the fuse FU2, the fuse FU3, the fuse FU4, the fuse FU5 and the fuse FU6 are short-circuited together to serve as the output end of the fuse set 3 and be connected to the input end of the NMOS tube set 4; when the current flowing through the fuse set 3 exceeds the upper limit of the capacity thereof, it blows out to thereby protect the LOAD.
Further, the NMOS tube group 4 includes an NMOS tube S1 and an NMOS tube S2;
the drains of the NMOS tube S1 and the NMOS tube S2 are connected together in a short circuit and are used as the input end of the NMOS tube group 4 to be connected with the fuse group 3;
the source electrodes of the NMOS tube S1 and the NMOS tube S2 are connected to the VO pin in a short-circuit mode;
the grids of the NMOS tube S1 and the NMOS tube S2 are short-circuited together and connected to the output end of the drive circuit 7;
the NMOS tube has large capacity and low breakover voltage, and can meet the requirement of high power by adopting a parallel connection mode of 2 pieces.
Further, the breakdown protection circuit 5 comprises an NMOS transistor S3 and a driving resistor R9;
the drain electrode of the NMOS tube S3 is connected to the VO pin, the source electrode of the NMOS tube S3 is connected to the GND pin, and the grid electrode of the NMOS tube S3 is connected to the 5 pins of the MCU through a driving resistor R9;
when the electronic switch 1 is turned off, if the high-precision overcurrent protection circuit 2 detects that current flows, the situation of MOS tube breakdown is shown; at the moment, the MCU microcontroller outputs high level at the 5 pins to drive the NMOS tube S3 to be conducted, and a transient large current is generated to fuse the fuse set 3, so that the breakdown protection function is realized.
Further, the boost power supply 6 comprises a boost inductor L1, a boost diode D1, an NMOS transistor S4, a drive resistor R10, and an output capacitor C2;
one end of the boosting inductor L1 is connected to the VIN pin, and the other end of the boosting inductor L1 is connected to the anode of the boosting diode D1;
the common end of the boosting inductor L1 and the boosting diode D1 is connected to the drain electrode of the NMOS tube S4;
the grid electrode of the NMOS tube S4 is connected to a 3 pin of the MCU through a driving resistor R10;
the cathode of the boost diode D1 is connected to one end of the output capacitor C2, and the other end of the output capacitor C2 is connected to the GND pin;
the common end of the boost diode D1 and the output capacitor C2 is connected to the output end of the drive circuit 7;
the MCU microcontroller outputs a high-frequency PWM signal at the 3 pin to drive the NMOS tube S4 to be switched on and off to form a BOOST circuit; at this time, the voltage of the output capacitor C2 is much higher than VIN, and thus can be used as a driving power source for the NMOS transistor set 4.
Further, the driving circuit 7 comprises an optocoupler OC1, a voltage regulator tube Z2, a current limiting resistor R11 and a current limiting resistor R12;
the anode of the optocoupler OC1 is connected to a pin 5 of the MCU microcontroller, and the cathode of the optocoupler OC1 is connected to a GND pin through a current-limiting resistor R11;
the collector of the optocoupler OC1 is in short circuit with the cathode of the voltage regulator tube Z2 to serve as the output end of the driving circuit 7, and the output end of the driving circuit is connected with the NMOS tube group 4 and the boosting power supply 6 respectively;
an emitter of the optocoupler OC1 is connected with a VO pin after being in short circuit with an anode of the voltage regulator tube Z2, and is connected to a GND pin through a current limiting resistor R12;
when the MCU SGIN receives a starting signal, a 4-pin output low level enables the optical coupler OC1 to be closed, and at the moment, after high voltage generated by the boosting power supply 6 is clamped by the voltage regulator tube Z2, stable driving voltage is generated between the grid sources of the NMOS tube group 4, so that the electronic switch is switched on; when the MCU SGIN receives a closing signal, a high level is output at the 4-pin to enable the optical coupler OC1 to be switched on, and at the moment, the 4-grid source voltage of the NMOS pipe group is clamped to zero, so that the electronic switch is switched off.
The working principle is as follows:
the utility model provides a high-power electronic switch with high accuracy overcurrent protect function, include: the high-precision overcurrent protection circuit comprises a high-precision overcurrent protection circuit 2, a fuse set 3, an NMOS tube set 4, a breakdown protection circuit 5, a boosting power supply 6, a driving circuit 7 and an MCU microcontroller.
The high-precision overcurrent protection circuit 2 includes, but is not limited to: shunts R1, R2, R3, R4, R5 and R6, a shunt monitor CSA1, a pull-down resistor R7, a current-limiting resistor R8, a voltage-stabilizing tube Z1 and a filter capacitor C1. The voltage drop of the shunt is adopted in the main power loop as the judgment basis of overcurrent protection, and the shunt detector is used for linear proportional amplification, so that the accuracy of overcurrent protection is far higher than that of the traditional electronic switch.
The fuse set 3 includes, but is not limited to: fuses FU1, FU2, FU3, FU4, FU5, FU6. The fuse set is added to effectively solve the problem that the load caused by MOS tube breakdown cannot be separated from a working circuit, when the MOS tube breakdown is detected, the fuse set is rapidly fused, so that the load can be rapidly separated from the working circuit, the breakdown protection is realized, and the working reliability of the electronic switch is further improved.
The NMOS transistor bank 4 includes, but is not limited to: NMOS tubes S1 and S2. For the semiconductor device selected by the electronic switch, because the NMOS tube has lower on-resistance, higher power capacity and lower cost compared with the PMOS tube, when the NMOS tube is selected as the switch device, the used NMOS tubes are fewer, and have large power capacity, small size and low cost.
The breakdown protection circuit 5 includes, but is not limited to: NMOS pipe S3, drive resistance R9. When the MOS tube breaks down, the protection circuit starts to break down, so that a large current instantly passes through the fuse set, the fuse set is fused, and breakdown protection is realized. Can provide the breakdown protection function which is not provided by the traditional electronic switch.
The boost power supply 6 includes, but is not limited to: the voltage boosting circuit comprises a voltage boosting inductor L1, a voltage boosting diode D1, an NMOS (N-channel metal oxide semiconductor) tube S4, a driving resistor R10 and an output capacitor C2. Since the NMOS is used as the switching device, a gate voltage required when it is turned on is higher than an external power supply voltage, and thus a high voltage is generated by the boosting power supply to provide a condition for driving the NMOS transistor.
The driving circuit 7 includes, but is not limited to: the optical coupler OC1, a voltage regulator tube Z2 and current-limiting resistors R11 and R12. The NMOS tube and the system float to the ground, and different electric potentials are grounded by adopting an optical coupler, so that the drive of the NMOS tube is realized.
It is to be understood that the present invention has been described with reference to certain embodiments, and that various changes or equivalents may be substituted for elements thereof by those skilled in the art without departing from the spirit and scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from the essential scope thereof. Therefore, the present invention is not limited to the specific embodiments disclosed herein, and all embodiments falling within the scope of the claims of the present application are intended to be covered by the present invention.
Claims (7)
1. A high-power electronic switch with high-precision overcurrent protection function is characterized in that: the electronic switch comprises an electronic switch (1), wherein the electronic switch (1) comprises a high-precision overcurrent protection circuit (2), a fuse set (3), an NMOS (N-channel metal oxide semiconductor) tube set (4), a breakdown protection circuit (5), a boosting power supply (6), a driving circuit (7) and an MCU (microprogrammed control unit), and the electronic switch (1) is provided with 4 pins which are respectively an SGIN (single ground terminal) pin, a VIN (vehicle identification) pin, a VO (voltage) pin and a GND (ground) pin;
the VIN pin is connected to the anode of the battery BAT, the GND pin is connected to the cathode of the battery BAT, the VO pin is connected to one end of the LOAD LOAD, the other end of the LOAD LOAD is also connected to the cathode of the battery BAT, and the SGIN pin is connected to an external control signal.
2. The high-power electronic switch with high-precision overcurrent protection function according to claim 1, wherein the high-precision overcurrent protection circuit (2) comprises a shunt R1, a shunt R2, a shunt R3, a shunt R4, a shunt R5, a shunt R6, a shunt monitor CSA1, a pull-down resistor R7, a current-limiting resistor R8, a voltage regulator tube Z1, and a filter capacitor C1;
one end of the shunt R1, the shunt R2, the shunt R3, the shunt R4, the shunt R5 and the shunt R6 are connected together in short and connected to the positive input of the shunt monitor CSA 1;
the other ends of the shunt R1, the shunt R2, the shunt R3, the shunt R4, the shunt R5 and the shunt R6 are connected together in a short circuit mode, connected to the negative input of the shunt monitor CSA1 and connected to the input end of the fuse set (3);
the output end of the shunt monitor CSA1 is respectively connected to a GND pin and a 2 pin of the MCU through a pull-down resistor R7 and a current-limiting resistor R8;
one end of a voltage-stabilizing tube Z1 is in short circuit with one end of a filter capacitor C1 and is connected to a pin 2 of the MCU;
the other end of the voltage-regulator tube Z1 is in short circuit with the other end of the filter capacitor C1 and is connected with a GND pin.
3. The high power electronic switch with high precision overcurrent protection function according to claim 1, wherein the fuse set (3) comprises a fuse FU1, a fuse FU2, a fuse FU3, a fuse FU4, a fuse FU5, a fuse FU6;
one ends of the fuse FU1, the fuse FU2, the fuse FU3, the fuse FU4, the fuse FU5 and the fuse FU6 are connected together in a short circuit mode and serve as the input end of the fuse set (3) to be connected with the high-precision overcurrent protection circuit (2);
the other ends of the fuse FU1, the fuse FU2, the fuse FU3, the fuse FU4, the fuse FU5 and the fuse FU6 are short-circuited together to serve as the output end of the fuse set (3) and be connected to the input end of the NMOS pipe set (4).
4. The high power electronic switch with high precision overcurrent protection function according to claim 1, characterized in that the NMOS tube group (4) includes NMOS tube S1 and NMOS tube S2;
the drains of the NMOS tube S1 and the NMOS tube S2 are connected together in a short circuit mode and serve as the input end of the NMOS tube group (4) to be connected with the fuse group (3);
the source electrodes of the NMOS tube S1 and the NMOS tube S2 are connected to a VO pin in a short-circuit mode;
the grids of the NMOS tube S1 and the NMOS tube S2 are short-circuited together and connected to the output end of the drive circuit (7).
5. The high power electronic switch with high precision over-current protection function according to claim 1, characterized in that the breakdown protection circuit (5) comprises an NMOS transistor S3 and a driving resistor R9;
the drain electrode of the NMOS tube S3 is connected to the VO pin, the source electrode of the NMOS tube S3 is connected to the GND pin, and the grid electrode of the NMOS tube S3 is connected to the 5 pins of the MCU micro controller through the driving resistor R9.
6. The high-power electronic switch with high-precision overcurrent protection function according to claim 1, wherein the boost power supply (6) comprises a boost inductor L1, a boost diode D1, an NMOS transistor S4, a drive resistor R10, and an output capacitor C2;
one end of a boosting inductor L1 is connected to the VIN pin, and the other end of the boosting inductor L1 is connected to the anode of a boosting diode D1;
the common end of the boosting inductor L1 and the boosting diode D1 is connected to the drain electrode of the NMOS tube S4;
the grid electrode of the NMOS tube S4 is connected to a 3-pin of the MCU through a driving resistor R10;
the cathode of the boost diode D1 is connected to one end of the output capacitor C2, and the other end of the output capacitor C2 is connected to the GND pin;
the common end of the boost diode D1 and the output capacitor C2 is connected to the output end of the drive circuit (7).
7. The high-power electronic switch with high-precision overcurrent protection function according to claim 1, wherein the drive circuit (7) comprises an optical coupler OC1, a voltage regulator tube Z2, a current-limiting resistor R11, and a current-limiting resistor R12;
the anode of the optocoupler OC1 is connected to the 5 pins of the MCU, and the cathode of the optocoupler OC1 is connected to a GND pin through a current-limiting resistor R11;
the collector of the optocoupler OC1 is in short circuit with the cathode of the voltage regulator tube Z2 to serve as the output end of the driving circuit (7), and the optocoupler is respectively connected with the NMOS tube group (4) and the boosting power supply (6);
and an emitter of the optical coupler OC1 is connected with the VO pin after being in short circuit with an anode of the voltage regulator tube Z2, and is connected to the GND pin through a current-limiting resistor R12.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222259292.3U CN218526302U (en) | 2022-08-26 | 2022-08-26 | High-power electronic switch with high-precision overcurrent protection function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222259292.3U CN218526302U (en) | 2022-08-26 | 2022-08-26 | High-power electronic switch with high-precision overcurrent protection function |
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| Publication Number | Publication Date |
|---|---|
| CN218526302U true CN218526302U (en) | 2023-02-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202222259292.3U Active CN218526302U (en) | 2022-08-26 | 2022-08-26 | High-power electronic switch with high-precision overcurrent protection function |
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| Country | Link |
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| CN (1) | CN218526302U (en) |
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- 2022-08-26 CN CN202222259292.3U patent/CN218526302U/en active Active
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