CN111181128A - Protection circuit based on e-fuse chip - Google Patents
Protection circuit based on e-fuse chip Download PDFInfo
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- CN111181128A CN111181128A CN202010094785.9A CN202010094785A CN111181128A CN 111181128 A CN111181128 A CN 111181128A CN 202010094785 A CN202010094785 A CN 202010094785A CN 111181128 A CN111181128 A CN 111181128A
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- 239000003990 capacitor Substances 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 208000018777 Vulvar intraepithelial neoplasia Diseases 0.000 description 13
- 238000010586 diagram Methods 0.000 description 4
- 101100112673 Rattus norvegicus Ccnd2 gene Proteins 0.000 description 2
- 208000014259 low grade vulvar intraepithelial neoplasia Diseases 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/26—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to difference between voltages or between currents; responsive to phase angle between voltages or between currents
- H02H3/28—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to difference between voltages or between currents; responsive to phase angle between voltages or between currents involving comparison of the voltage or current values at two spaced portions of a single system, e.g. at opposite ends of one line, at input and output of apparatus
- H02H3/30—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to difference between voltages or between currents; responsive to phase angle between voltages or between currents involving comparison of the voltage or current values at two spaced portions of a single system, e.g. at opposite ends of one line, at input and output of apparatus using pilot wires or other signalling channel
- H02H3/305—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to difference between voltages or between currents; responsive to phase angle between voltages or between currents involving comparison of the voltage or current values at two spaced portions of a single system, e.g. at opposite ends of one line, at input and output of apparatus using pilot wires or other signalling channel involving current comparison
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
Abstract
The invention relates to a protection circuit based on an e-fuse chip. The protection circuit comprises an e-fuse chip and three MOSFETs arranged in parallel; the three MOSFETs are Q1, Q2 and Q3 respectively; the GATE port of the e-fuse chip is directly connected with the G pole of the Q3, the GATE port of the e-fuse chip is connected with the G poles of the Q1 and the Q2 through the driving module, and the S poles of the three MOSFETs arranged in parallel are output ends of the protection circuit. The invention adds a driving module and a switch tube Q3 on the basis of an ADM1278 protection circuit; the SOA and RDSON of Q3 are larger and mainly used for bearing inrush current during starting, and the SOA and RDSON of Q1 and Q2 are smaller and used for conducting larger load current; and better working performance is ensured in both the starting stage and the running stage.
Description
Technical Field
The invention relates to a protection circuit based on an e-fuse chip, and belongs to the technical field of power supply protection of servers.
Background
The good and stable power supply performance is the premise of normal work of the server, and in order to ensure the reliability of power supply, an e-fuse chip is usually arranged on a power supply path to be used for overcurrent, overvoltage and other protection, and the core technology of the e-fuse chip is to realize the protection function by controlling the on/off of an MOSFET matched with the e-fuse chip.
The working principle of the MOSFET is as follows: the voltage driving module outputs Vgate, when the Vgate exceeds the threshold voltage required by the conduction of the MOSFET, the D pole and the S pole of the MOSFET start to be conducted, current flows to VOUT from VIN, when the Vgate value is increased to a certain set value, the MOSFET is completely conducted, at the moment, the conduction impedance between the D pole and the S pole is minimum, and when the Vgate is lower than the threshold voltage required by the conduction of the MOSFET, the D pole and the S pole are disconnected, and the MOSFET achieves a switching function.
The ADM1278 is a common e-fuse chip, obtains the current flowing through the precision resistor by measuring the voltage difference between two ends of the precision resistor, and turns off the MOSFET through a Vgate signal when detecting that the current is overlarge so as to realize the overcurrent protection function.
Because the current that a single MOSFET can bear is limited, the current specification is higher, the current capacity is improved by generally adopting a mode of connecting MOSFETs in parallel, when the system is powered on, if the output terminal COUT is larger, a higher inrushing current can be generated on a power supply path, because the driving signal Vgate can not be suddenly changed, the MOSFET is in an incomplete conduction state at the stage, the two ends of the MOSFET have larger voltage drop, the voltage and the inrushing current are combined to generate larger heat power consumption on the MOSFET, and when the power consumption is overlarge, the MOSFET can be damaged. Therefore, in the MOSFET specification, the SOA (safe operating area) is specified, the VDS and the ID are different in the time that the MOSFET can bear when the size is different, and the parameter difference is mainly affected by RDSON (impedance when the MOSFET is fully turned on).
For example, two MOSFETs are used in parallel, and due to characteristic differences between different MOSFETs, Vgate threshold voltages required for starting conduction of different MOSFETs are also different, when a Vgate driving signal is output from the ADM1278, a MOSFET with a low threshold voltage starts to be conducted, inrush current flows through the MOSFET, the temperature of the MOSFET increases, the threshold voltage for conducting the MOSFET is a negative temperature coefficient, and the value of the threshold voltage decreases with the increase in temperature, so that the opening degree of the MOSFET which is started earlier is further increased.
The worst case is that one MOSFET takes over all inrush currents. Therefore, in order to ensure the power supply stability, the MOSFET selection needs to be evaluated in the worst case, that is, one MOSFET undertakes all turn-on inrush currents. Therefore, the selected MOSFET should have a higher SOA, but when the SOA is higher, the corresponding MOSFET has a larger impedance RDSON when being completely turned on, so that the loss on the RDSON is increased, and the system efficiency is reduced. Therefore, compromise selection is needed, the type selection difficulty is high, and the application of high current and large capacitive load is limited when the e-fuse chip only outputs one driving signal due to the limitation of the MOSFET SOA.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a protection circuit based on an e-fuse chip.
The technical scheme of the invention is as follows:
a protection circuit based on an e-fuse chip comprises the e-fuse chip and three MOSFETs arranged in parallel; the three MOSFETs are Q1, Q2 and Q3 respectively; the GATE port of the e-fuse chip is directly connected with the G pole of the Q3, the GATE port of the e-fuse chip is connected with the G poles of the Q1 and the Q2 through the driving module, and the S poles of the three MOSFETs arranged in parallel are output ends of the protection circuit.
The Vgate output by the e-fuse is used to drive Q3, and the output signal of the Vgate from the drive module is used to control Q1 and Q2.
Preferably, a GND port of the e-fuse chip is grounded, and is connected with the output end of the protection circuit after being connected with the capacitor; the input of the protection circuit is respectively connected with the VCC port and the HS of the e-fuse chip+Connecting ports; the input of the protection circuit also passes through a precision resistor and the HS of the e-fuse chip-Connecting ports; HS of e-fuse chip-The port is connected to the D pole of Q1.
Preferably, the RDSON of Q3 is greater than the RDSON of Q1, Q2, respectively, and the RDSON of Q3 differs from that of Q1, Q2 by at least 5m Ω.
Generally, when the RDSON is large, the SOA is relatively large, when the RDSON is small, the SOA is relatively small, and a suitable SOA is usually selected according to a specific circuit. The SOA and RDSON of Q3 are large enough to bear a large inrush current when the system is started, and when the output voltage reaches 90% of the input voltage, the driving module outputs Vgate1 to control Q1 and Q2 to turn on, wherein the SOA and RDSON of Q1 and Q2 are small enough to bear a high conduction current and have a small conduction loss. The problem that the application scene of a large-current and large-capacity load is limited due to the influence of an MOSFET SOA when only one drive is output by an e-fuse chip in the current stage is solved, and MOSFET type selection is facilitated.
Preferably, the driving module comprises a comparator and a MOSFET Q4, and the driving module comprises three input signals VIN _2, VOUT, Vgate and an output signal Vgate _ 1; VIN _2 is the input signal of Q1, Q2 and Q3; VOUT is an output signal of Q1, Q2 and Q3; VIN _2 gets the voltage V1 through the voltage dividing resistors R1 and R2 and is connected to the negative terminal of the comparator, VOUT is connected to the positive terminal of the comparator, and VIN _2 gets the voltage through the voltage dividing resistors R3 and R4 to provide the power supply for the comparator.
More preferably, R2 ═ 9R 1. R2 is 9R1, so V1 is 90% VIN _2, when the system is started, the driving signal output by ADM1278 controls Q3 to be turned on, and VOUT gradually increases, when VOUT > V1, that is, VOUT > 90% VIN _2, the comparator outputs a high level signal to drive Q4 to be turned on, and the Vgate signal passes through Q4 to obtain Vgate _1 for driving Q1 and Q2 to be turned on, because G poles of Q1 and Q2 have very small capacitance to ground. Therefore, Q4 almost has no inrush current, and can select a common MOSFET to realize a switching function, so that the problem that the application scene of a large-current large-capacity load is limited due to the influence of an MOSFET SOA can be solved under the condition that the e-fuse chip only outputs one driving signal by using the driving module, and the MOSFET is convenient to select the type.
The invention has the beneficial effects that:
1. in the prior art, a common ADM1278 chip can only output one MOSFET driving signal, is limited in a large-current large-capacitive load application scene under the influence of a MOSFET SOA and cannot meet the requirement of a large-current large-capacitive load; the invention adds a driving module and a switch tube Q3 on the basis of an ADM1278 protection circuit; the SOA and RDSON of Q3 are larger and mainly used for bearing inrush current during starting, and the SOA and RDSON of Q1 and Q2 are smaller and used for conducting larger load current; when the ADM1278 outputs a driving signal to enable the Q3 to be firstly switched on, when the driving module detects that the output voltage signal is higher than 90% of the input voltage signal, the driving module outputs the driving signal to switch on the Q1 and the Q2; and better working performance is ensured in both the starting stage and the running stage.
2. The circuit of the invention has simple structure and lower realization cost; and 4, the mosfet type selection is convenient.
Drawings
FIG. 1 is a schematic diagram of the operation of a prior art MOSFET;
FIG. 2 is a prior art over-current and over-voltage protection circuit with an ADM1278 configured with MOSFETs, wherein Rsense is a precision resistor;
FIG. 3 is a prior art circuit for parallel application of two MOSFETs;
FIG. 4 is a diagram of a MOSFET SOA;
FIG. 5 is a schematic diagram of a protection circuit based on an e-fuse chip according to embodiment 1;
fig. 6 is a circuit diagram of the driving module according to the present invention.
Detailed Description
The invention is further described below, but not limited thereto, with reference to the following examples and the accompanying drawings.
Description of terms:
MOSFET: english is called as a whole: Metal-Oxide-Semiconductor Field-Effect Transistor; a metal-oxide semiconductor field effect transistor.
EFUSE: english is called as a whole: electronic Fuse; an electronic fuse.
Example 1
As shown in fig. 5.
A protection circuit based on an e-fuse chip comprises the e-fuse chip and three MOSFETs arranged in parallel; the three MOSFETs are Q1, Q2 and Q3 respectively; the GATE port of the e-fuse chip is directly connected with the G pole of the Q3, the GATE port of the e-fuse chip is connected with the G poles of the Q1 and the Q2 through the driving module, and the S poles of the three MOSFETs arranged in parallel are output ends of the protection circuit.
Wherein the e-fuse chip is ADM 1278. The Vgate output by the e-fuse is used to drive Q3, and the output signal of the Vgate from the drive module is used to control Q1 and Q2.
The GND port of the e-fuse chip is grounded, and is connected with the output end of the protection circuit after being connected with the capacitor COUT; the input VIN-1 of the protection circuit is respectively connected with the VCC port and the HS of the e-fuse chip+Connecting ports; the input VIN-1 of the protection circuit also passes through the HS of the precision resistor Rsense and the e-fuse chip-Connecting ports; HS of e-fuse chip-The port is connected to the D pole of Q1.
The RDSON of Q1 and Q2 are the same, and the RDSON of Q3 is 5m Ω greater than the RDSON of Q1 and Q2, respectively. The SOA and RDSON of Q3 are large enough to bear a large inrush current when the system is started, and when the output voltage reaches 90% of the input voltage, the driving module outputs Vgate1 to control Q1 and Q2 to turn on, wherein the SOA and RDSON of Q1 and Q2 are small enough to bear a high conduction current and have a small conduction loss. The method solves the problem that the application scene of the large-current large-capacity load is limited due to the influence of the MOSFET SOA when the e-fuse chip only outputs one drive at the present stage, and is convenient for MOSFET model selection.
In this embodiment, the input voltage is 12V, Rsense is 1m Ω, and COUT is 1000 uf.
Example 2
As shown in fig. 6.
The e-fuse chip-based protection circuit according to embodiment 1, further comprising a driving module including a comparator and a MOSFET Q4, wherein the driving module includes three input signals VIN _2, VOUT, Vgate and an output signal Vgate _ 1; VIN _2 is the input signal of Q1, Q2 and Q3; VOUT is an output signal of Q1, Q2 and Q3; VIN _2 gets the voltage V1 through the voltage dividing resistors R1 and R2 and is connected to the negative terminal of the comparator, VOUT is connected to the positive terminal of the comparator, VIN _2 gets the voltage VCC through the voltage dividing resistors R3 and R4 to provide the power supply for the comparator.
In this embodiment, the comparator is a single-path differential comparator TL 331; r1 ═ 9K Ω, R2 ═ 1K Ω, R3 ═ 7K Ω, and R4 ═ 5K Ω.
Example 3
The protection circuit based on the e-fuse chip as described in embodiment 2, further, R2 ═ 9R 1. R2 is 9R1, so V1 is 90% VIN _2, when the system is started, the driving signal output by ADM1278 controls Q3 to be turned on, and VOUT gradually increases, when VOUT > V1, that is, VOUT > 90% VIN _2, the comparator outputs a high level signal to drive Q4 to be turned on, and the Vgate signal passes through Q4 to obtain Vgate _1 for driving Q1 and Q2 to be turned on, because G poles of Q1 and Q2 have very small capacitance to ground. Therefore, Q4 almost has no inrushcurrent, and can select a common MOSFET to realize a switching function, so that the problem that the application scene of a large-current large-capacity load is limited due to the influence of an MOSFET SOA can be solved under the condition that the e-fuse chip only outputs one driving signal by using the driving module, and the MOSFET is convenient to select.
Claims (5)
1. The protection circuit based on the e-fuse chip is characterized by comprising the e-fuse chip and three MOSFETs (metal oxide semiconductor field effect transistors) which are arranged in parallel; the three MOSFETs are Q1, Q2 and Q3 respectively; the GATE port of the e-fuse chip is directly connected with the G pole of Q3, and the GATE port of the e-fuse chip is connected with the G poles of Q1 and Q2 through a driving module; the S poles of the three MOSFETs arranged in parallel are output ends of the protection circuit.
2. The e-fuse chip-based protection circuit as claimed in claim 1, wherein a GND port of the e-fuse chip is grounded, and the GND port is connected with a capacitor and then connected with an output end of the protection circuit; the input of the protection circuit is respectively connected with the VCC port and the HS of the e-fuse chip+Connecting ports; the input of the protection circuit also passes through a precision resistor and the HS of the e-fuse chip-Connecting ports; HS of e-fuse chip-The port is connected to the D pole of Q1.
3. The e-fuse chip based protection circuit of claim 1, wherein the RDSON of Q3 is greater than the RDSON of Q1, Q2, respectively, and the RDSON of Q3 differs from the RDSON of Q1, Q2 by at least 5m Ω.
4. The e-fuse chip-based protection circuit as claimed in claim 1, wherein the driving module comprises a comparator and a MOSFET Q4, the driving module comprises three input signals VIN _2, VOUT, Vgate and one output signal Vgate _ 1; VIN _2 is the input signal of Q1, Q2 and Q3; VOUT is an output signal of Q1, Q2 and Q3; VIN _2 gets the voltage V1 through the voltage dividing resistors R1 and R2 and is connected to the negative terminal of the comparator, VOUT is connected to the positive terminal of the comparator, and VIN _2 gets the voltage through the voltage dividing resistors R3 and R4 to provide the power supply for the comparator.
5. The e-fuse chip-based protection circuit as claimed in claim 4, wherein R2-9R 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010094785.9A CN111181128A (en) | 2020-02-16 | 2020-02-16 | Protection circuit based on e-fuse chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010094785.9A CN111181128A (en) | 2020-02-16 | 2020-02-16 | Protection circuit based on e-fuse chip |
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| CN111181128A true CN111181128A (en) | 2020-05-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202010094785.9A Pending CN111181128A (en) | 2020-02-16 | 2020-02-16 | Protection circuit based on e-fuse chip |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112667061A (en) * | 2020-12-10 | 2021-04-16 | 浪潮电子信息产业股份有限公司 | Current control circuit applied to server and server |
| CN117239701A (en) * | 2023-11-14 | 2023-12-15 | 苏州元脑智能科技有限公司 | Electronic fuse circuit, chip, mainboard and electronic equipment |
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| CN110661405A (en) * | 2019-09-29 | 2020-01-07 | 苏州浪潮智能科技有限公司 | Load protection circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2009055696A (en) * | 2007-08-27 | 2009-03-12 | Fuji Electric Device Technology Co Ltd | Gate drive circuit of semiconductor device and gate drive method |
| CN106953624A (en) * | 2017-04-20 | 2017-07-14 | 天索（苏州）控制技术有限公司 | MOSFET parallel connection current foldback circuits |
| CN207117166U (en) * | 2017-06-08 | 2018-03-16 | 郑州云海信息技术有限公司 | A kind of Power Supply Hot Swap protection circuit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112667061A (en) * | 2020-12-10 | 2021-04-16 | 浪潮电子信息产业股份有限公司 | Current control circuit applied to server and server |
| CN112667061B (en) * | 2020-12-10 | 2023-01-10 | 浪潮电子信息产业股份有限公司 | Current control circuit applied to server and server |
| CN117239701A (en) * | 2023-11-14 | 2023-12-15 | 苏州元脑智能科技有限公司 | Electronic fuse circuit, chip, mainboard and electronic equipment |
| CN117239701B (en) * | 2023-11-14 | 2024-02-20 | 苏州元脑智能科技有限公司 | Electronic fuse circuit, chip, mainboard and electronic equipment |
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Application publication date: 20200519 |