CN110601512A - Discrete high-side driving circuit system - Google Patents
Discrete high-side driving circuit system Download PDFInfo
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
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Abstract
Description
技术领域technical field
本发明涉及高边驱动电路技术领域，特别涉及一种自保护的分立式高边驱动电路系统。The invention relates to the technical field of high-side driving circuits, in particular to a self-protected discrete high-side driving circuit system.
背景技术Background technique
在工业领域中，一个系统或设备往往集成了各种各样的小功能执行器，且所集成的数量也较多，目前实现执行器的驱动电路：一是使用多块集成芯片来构成其驱动电路，它们能完全满足执行器的驱动要求，但现有集成芯片中对于小功能(驱动能力小于200mA以内为中等电流能力)驱动器集成数目不够，为完成其功能往往被迫使用该集成芯片中的一些大电流驱动模块部分，目的是为了减小集成芯片使用数目，但这样使用会造成成本增高。二是使用芯片厂家集成好的PMOSFET、NMOSFET或IGBT，它们是能满足执行器的驱动要求，而驱动电路作为输出电路，对于短路保护/过流保护/限流的自保护功能是必须的，若芯片厂家集成此功能，价格会增加不少，若在此基础上再自行开发其过流保护/限流保护功能，PCB(印制电路板)面积将是一个问题，系统集成难度增加，其结构将相对复杂。In the industrial field, a system or device often integrates various small-function actuators, and the number of integrated actuators is also large. At present, the drive circuit of the actuator is realized: one is to use multiple integrated chips to form its drive They can fully meet the driving requirements of the actuator, but the number of integrated drivers for small functions (the driving capacity is less than 200mA is medium current capacity) in the existing integrated chip is not enough, and it is often forced to use the integrated chip in order to complete its function. Some high-current drive module parts are designed to reduce the number of integrated chips used, but such use will increase the cost. The second is to use the PMOSFET, NMOSFET or IGBT integrated by the chip manufacturer, which can meet the driving requirements of the actuator, and the driving circuit is used as the output circuit, which is necessary for the self-protection function of short circuit protection/overcurrent protection/current limiting. Chip manufacturers integrate this function, and the price will increase a lot. If they develop their own over-current protection/current-limiting protection function on this basis, the PCB (printed circuit board) area will be a problem, and the difficulty of system integration will increase. will be relatively complex.
发明内容Contents of the invention
鉴于以上内容，有必要提供一种分立式高边驱动电路系统，该分立式高边驱动电路系统即能够有效解决电流驱动和PCB面积的问题，又能够有效实现过流保护/限流保护的目的，且整体成本低。In view of the above, it is necessary to provide a discrete high-side drive circuit system, which can effectively solve the problems of current drive and PCB area, and can effectively realize over-current protection/current-limiting protection purpose, and the overall cost is low.
为达到上述目的，本发明所采用的技术方案是：In order to achieve the above object, the technical scheme adopted in the present invention is:
一种分立式高边驱动电路系统，包括控制电路、驱动电路和保护电路，所述控制电路包括控制信号输入Vin、分压电阻R1、分压电阻R2、限流电阻R3和开关管Q1，所述驱动电路包括开关管Q3和防反二极管D1，所述保护电路包括开关管Q2、降低EMC电阻R4和限流反馈电阻R5；A discrete high-side driving circuit system, including a control circuit, a driving circuit and a protection circuit, the control circuit including a control signal input Vin, a voltage dividing resistor R1, a voltage dividing resistor R2, a current limiting resistor R3 and a switch tube Q1, The drive circuit includes a switch tube Q3 and an anti-reverse diode D1, and the protection circuit includes a switch tube Q2, an EMC reduction resistor R4 and a current-limiting feedback resistor R5;
其中，所述控制电路中，所述分压电阻R1的一端连接控制信号输入Vin，另一端分别连接分压电阻R2的一端和开关管Q1的控制端，所述分压电阻R2的另一端和开关管Q1的第二端并联接地，所述开关管Q1的第一端连接限流电阻R3的一端，所述限流电阻R3的另一端分别连接驱动电路中的开关管Q3的控制端和保护电路中的开关管Q2的第一端，所述开关管Q3的第一端连接防反二极管D1的阳极，所述防反二极管D1的阴极连接输出负载Vout，所述开关管Q2的第二端分别连接电源Vcc和限流反馈电阻R5的一端，所述限流反馈电阻R5的另一端分别连接开关管Q3的第二端和降低EMC电阻R4的一端，所述降低EMC电阻R4的另一端连接开关管Q2的控制端。Wherein, in the control circuit, one end of the voltage dividing resistor R1 is connected to the control signal input Vin, and the other end is respectively connected to one end of the voltage dividing resistor R2 and the control end of the switch tube Q1, and the other end of the voltage dividing resistor R2 and The second end of the switch tube Q1 is connected to the ground in parallel, the first end of the switch tube Q1 is connected to one end of the current limiting resistor R3, and the other end of the current limiting resistor R3 is respectively connected to the control terminal of the switch tube Q3 and the protection terminal in the drive circuit. The first end of the switch tube Q2 in the circuit, the first end of the switch tube Q3 is connected to the anode of the anti-reverse diode D1, the cathode of the anti-reverse diode D1 is connected to the output load Vout, and the second end of the switch tube Q2 Connect one end of the power supply Vcc and the current-limiting feedback resistor R5 respectively, the other end of the current-limiting feedback resistor R5 is respectively connected to the second end of the switch tube Q3 and one end of the EMC-reducing resistor R4, and the other end of the EMC-reducing resistor R4 is connected to The control terminal of the switch tube Q2.
优选的，所述分压电阻R1和分压电阻R2的阻值相同。Preferably, the resistance values of the voltage dividing resistor R1 and the voltage dividing resistor R2 are the same.
优选的，所述防反二极管D1为肖特基二极管。Preferably, the anti-reverse diode D1 is a Schottky diode.
优选的，所述限流反馈电阻R5的阻值等于开关管Q2的开启电压Uon/电流阈值，其中，所述电流阈值为分立式高边驱动电路系统的电流阈值。Preferably, the resistance value of the current-limiting feedback resistor R5 is equal to the turn-on voltage Uon/current threshold of the switch tube Q2, wherein the current threshold is the current threshold of the discrete high-side drive circuit system.
优选的，所述开关管Q1为NPN三极管或者MOS场效应晶体管，所述开关管Q2、开关管Q3均为PNP三极管或者MOS场效应晶体管。Preferably, the switch Q1 is an NPN transistor or a MOS field effect transistor, and the switch Q2 and the switch Q3 are both PNP transistors or MOS field effect transistors.
优选的，所述开关管Q1为NPN三极管，所述开关管Q2、开关管Q3均为PNP三极管，此时，NPN三极管或者PNP三极管中的基极为上文所说的控制端，集电极为第一端，发射极为第二端。Preferably, the switching tube Q1 is an NPN transistor, and the switching tube Q2 and the switching tube Q3 are both PNP transistors. At this time, the base of the NPN transistor or the PNP transistor is the control terminal mentioned above, and the collector is the first One end, the emitter is the second end.
与现有技术相比，本发明具有以下有益效果：Compared with the prior art, the present invention has the following beneficial effects:
本发明通过开关管、电阻和防反二极管构成的高边驱动电路来实现过流保护和限流保护的目的，相比现有电路系统和集成芯片，其电路简单可靠，且成本较低，并能够有效解决电流驱动和PCB面积的问题，本发明适用于小功能(驱动能力小于200mA以内为中等电流能力)驱动器。The invention achieves the purpose of overcurrent protection and current limiting protection through the high-side drive circuit composed of switch tube, resistor and anti-reverse diode. Compared with the existing circuit system and integrated chip, the circuit is simple and reliable, and the cost is low, and the The problem of current driving and PCB area can be effectively solved, and the invention is suitable for drivers with small functions (the driving capacity is less than 200mA, which is medium current capacity).
附图说明Description of drawings
图1是本发明一种分立式高边驱动电路系统的电路结构图。FIG. 1 is a circuit structure diagram of a discrete high-side driving circuit system of the present invention.
主要元件符号说明Explanation of main component symbols
图中：控制信号输入Vin、分压电阻R1、分压电阻R2、限流电阻R3、开关管Q1、开关管Q3、防反二极管D1、开关管Q2、降低EMC电阻R4、限流反馈电阻R5。In the figure: control signal input Vin, voltage divider resistor R1, voltage divider resistor R2, current limiting resistor R3, switch tube Q1, switch tube Q3, anti-reverse diode D1, switch tube Q2, EMC reduction resistor R4, current limit feedback resistor R5 .
如下具体实施方式将结合上述附图进一步说明本发明。The following specific embodiments will further illustrate the present invention in conjunction with the above-mentioned drawings.
具体实施方式Detailed ways
请参阅图1，在本发明的一种较佳实施方式中，一种分立式高边驱动电路系统，包括控制电路、驱动电路和保护电路，所述控制电路包括控制信号输入Vin、分压电阻R1、分压电阻R2、限流电阻R3和开关管Q1，所述驱动电路包括开关管Q3和防反二极管D1，所述保护电路包括开关管Q2、降低EMC(电磁兼容性)电阻R4和限流反馈电阻R5。Please refer to Fig. 1, in a preferred embodiment of the present invention, a discrete high-side drive circuit system includes a control circuit, a drive circuit and a protection circuit, the control circuit includes a control signal input Vin, a voltage divider Resistor R1, voltage dividing resistor R2, current limiting resistor R3 and switch tube Q1, the drive circuit includes switch tube Q3 and anti-reverse diode D1, and the protection circuit includes switch tube Q2, reducing EMC (electromagnetic compatibility) resistor R4 and Current-Limiting Feedback Resistor R5.
其中，所述控制电路中，所述分压电阻R1的一端连接控制信号输入Vin，另一端分别连接分压电阻R2的一端和开关管Q1的控制端，所述分压电阻R2的另一端和开关管Q1的第二端并联接地，所述开关管Q1的第一端连接限流电阻R3的一端，所述限流电阻R3的另一端分别连接驱动电路中的开关管Q3的控制端和保护电路中的开关管Q2的第一端，所述开关管Q3的第一端连接防反二极管D1的阳极，所述防反二极管D1的阴极连接输出负载Vout，所述开关管Q2的第二端分别连接电源Vcc和限流反馈电阻R5的一端，所述限流反馈电阻R5的另一端分别连接开关管Q3的第二端和降低EMC电阻R4的一端，所述降低EMC电阻R4的另一端连接开关管Q2的控制端。Wherein, in the control circuit, one end of the voltage dividing resistor R1 is connected to the control signal input Vin, and the other end is respectively connected to one end of the voltage dividing resistor R2 and the control end of the switch tube Q1, and the other end of the voltage dividing resistor R2 and The second end of the switch tube Q1 is connected to the ground in parallel, the first end of the switch tube Q1 is connected to one end of the current limiting resistor R3, and the other end of the current limiting resistor R3 is respectively connected to the control terminal of the switch tube Q3 and the protection terminal in the drive circuit. The first end of the switch tube Q2 in the circuit, the first end of the switch tube Q3 is connected to the anode of the anti-reverse diode D1, the cathode of the anti-reverse diode D1 is connected to the output load Vout, and the second end of the switch tube Q2 Connect one end of the power supply Vcc and the current-limiting feedback resistor R5 respectively, the other end of the current-limiting feedback resistor R5 is respectively connected to the second end of the switch tube Q3 and one end of the EMC-reducing resistor R4, and the other end of the EMC-reducing resistor R4 is connected to The control terminal of the switch tube Q2.
本发明通过上述的电路设置，成本较低，且能够解决电流驱动和PCB面积的问题，并能够实现过流保护/限流保护的目的。Through the above-mentioned circuit arrangement, the present invention has low cost, can solve the problems of current driving and PCB area, and can realize the purpose of over-current protection/current-limiting protection.
其中，在本发明的控制电路中，所述开关管Q1用于改善控制器的驱动能力，该控制器为本发明提供控制信号输入Vin，而其本身的驱动能力偏弱；所述分压电阻R1和分压电阻R2用于保障开关管Q1的控制端电压远大于开关管Q1的开启电压，两者一般是集成在开关管Q1中，而在本实施方式中，所述分压电阻R1和分压电阻R2的阻值相同，两者的阻值范围均为2kΩ-100kΩ，优选取用10kΩ；所述限流电阻R3用于在所述分立式高边驱动电路系统的驱动输出处于正常状态时保障开关管Q3的控制端能够正常下拉至地，在驱动输出处于过流状态时保证开关管Q3的控制端能够正常下拉至电源Vcc，从而起到限流保护的作用，在本实施方式中，所述限流电阻R3的阻值范围为470Ω-4.7kΩ，优选取用1.78kΩ。Wherein, in the control circuit of the present invention, the switch tube Q1 is used to improve the driving capability of the controller, which provides the control signal input Vin for the present invention, but its own driving capability is relatively weak; the voltage dividing resistor R1 and voltage divider resistor R2 are used to ensure that the voltage at the control terminal of switch tube Q1 is much greater than the turn-on voltage of switch tube Q1, and the two are generally integrated in switch tube Q1. In this embodiment, the voltage divider resistor R1 and The resistance value of the voltage dividing resistor R2 is the same, and the resistance value range of both is 2kΩ-100kΩ, preferably 10kΩ; the current limiting resistor R3 is used for the drive output of the discrete high-side drive circuit system to be in a normal state state, ensure that the control terminal of the switch tube Q3 can be normally pulled down to the ground, and ensure that the control terminal of the switch tube Q3 can be normally pulled down to the power supply Vcc when the drive output is in an overcurrent state, so as to play the role of current limiting protection. In this embodiment Among them, the resistance range of the current limiting resistor R3 is 470Ω-4.7kΩ, preferably 1.78kΩ.
在本发明的所述驱动电路中，所述开关管Q3为本发明所述分立式高边驱动电路系统的输出器件，考虑到开关管Q3的散热问题和PCB面积，本实施方式中，选取输出电流小于1A的开关作为开关管Q3的输出；所述防反二极管D1用于支持短路到电源Vcc，还用于防止外接输出接反的情况下对开关管Q3产生损伤，从而起到短路保护的目的，在本实施方式中，所述防反二极管D1为低压降耐高压的肖特基二极管，优选取用耐压值为48V的肖特基二极管。In the drive circuit of the present invention, the switch tube Q3 is the output device of the discrete high-side drive circuit system of the present invention. Considering the heat dissipation problem of the switch tube Q3 and the PCB area, in this embodiment, select A switch with an output current of less than 1A is used as the output of the switch tube Q3; the anti-reverse diode D1 is used to support a short circuit to the power supply Vcc, and is also used to prevent damage to the switch tube Q3 when the external output is reversed, thereby providing short circuit protection For the purpose, in this embodiment, the anti-reverse diode D1 is a Schottky diode with low voltage drop and high voltage resistance, preferably a Schottky diode with a withstand voltage value of 48V.
在本发明的所述保护电路中，所述开关管Q2起到自保护开关的作用；所述降低EMC电阻R4用于增加开关管Q2开启过程中的米勒效应时间，从而降低整个电路的EMC，需要说明的是，若整个电路的EMC能够满足要求，可省略所述降低EMC电阻R4，此时，将所述降低EMC电阻R4进行短接(即所述降低EMC电阻R4贴0ohm)，在本实施方式中，所述降低EMC电阻R4的阻值范围为1kΩ-100kΩ，优选取用10kΩ；所述限流反馈电阻R5用于分立式高边驱动电路系统的电流检测及过流保护，当所述分立式高边驱动电路系统的驱动输出电流达到该系统的电流阈值(小于等于200mA)时，所述限流反馈电阻R5消耗的电压刚好等于开关管Q2的开启电压Uon，此时，所述开关管Q2导通、开关管Q3关闭(即分立式高边驱动电路系统关闭)，从而起到自保护所述分立式高边驱动电路系统的输出作用，因此，所述限流反馈电阻R5的阻值等于开关管Q2的开启电压Uon/电流阈值，其中，所述电流阈值为分立式高边驱动电路系统的电流阈值，在本实施方式中，所述限流反馈电阻R5的阻值范围为0.1Ω-100Ω，优选取用10Ω，以满足中等电流能力。In the protection circuit of the present invention, the switch tube Q2 acts as a self-protection switch; the EMC reduction resistor R4 is used to increase the Miller effect time during the turn-on process of the switch tube Q2, thereby reducing the EMC of the entire circuit , it should be noted that if the EMC of the entire circuit can meet the requirements, the EMC reduction resistor R4 can be omitted. At this time, the EMC reduction resistor R4 is short-circuited (that is, the EMC reduction resistance R4 is attached to 0ohm). In this embodiment, the resistance range of the EMC-reducing resistor R4 is 1kΩ-100kΩ, preferably 10kΩ; the current-limiting feedback resistor R5 is used for current detection and overcurrent protection of the discrete high-side drive circuit system, When the drive output current of the discrete high-side drive circuit system reaches the current threshold of the system (less than or equal to 200mA), the voltage consumed by the current-limiting feedback resistor R5 is just equal to the turn-on voltage Uon of the switch tube Q2, at this time , the switch tube Q2 is turned on, and the switch tube Q3 is turned off (that is, the discrete high-side drive circuit system is closed), thereby playing the role of self-protecting the output of the discrete high-side drive circuit system. Therefore, the limit The resistance value of the current feedback resistor R5 is equal to the turn-on voltage Uon/current threshold of the switch tube Q2, wherein the current threshold is the current threshold of the discrete high-side drive circuit system. In this embodiment, the current-limiting feedback resistor The resistance value of R5 ranges from 0.1Ω to 100Ω, preferably 10Ω to meet the medium current capability.
进一步地，在本发明中，所述开关管Q1为NPN三极管或者MOS场效应晶体管，优选选用NPN三极管，所述开关管Q2、开关管Q3均为PNP三极管或者MOS场效应晶体管，优选选用PNP三极管，此时，NPN三极管或者PNP三极管中的基极为上文所说的控制端，集电极为第一端，发射极为第二端。在本实施方式中，所述开关管Q1为电流小于100mA的NPN三极管，所述开关管Q2为电流小于100mA的PNP三极管，所述开关管Q3为电流为500mA的PNP三极管。Further, in the present invention, the switching tube Q1 is an NPN transistor or a MOS field effect transistor, preferably an NPN transistor, and the switching tube Q2 and the switching tube Q3 are both PNP transistors or MOS field effect transistors, preferably a PNP transistor , at this time, the base of the NPN transistor or the PNP transistor is the control terminal mentioned above, the collector is the first terminal, and the emitter is the second terminal. In this embodiment, the switch Q1 is an NPN transistor with a current of less than 100mA, the switch Q2 is a PNP transistor with a current of less than 100mA, and the switch Q3 is a PNP transistor with a current of 500mA.
上述说明是针对本发明较佳可行实施例的详细说明，但实施例并非用以限定本发明的专利申请范围，凡本发明所提示的技术精神下所完成的同等变化或修饰变更，均应属于本发明所涵盖专利范围。The above description is a detailed description of the preferred feasible embodiments of the present invention, but the embodiments are not used to limit the scope of the patent application of the present invention. All equivalent changes or modifications completed under the technical spirit suggested by the present invention shall belong to The scope of patents covered by the present invention.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111105747A (en) * | 2019-12-30 | 2020-05-05 | 大峡谷照明系统（苏州）股份有限公司 | Drive circuit and display device |
| CN111600370A (en) * | 2019-12-27 | 2020-08-28 | 青岛鼎信通讯股份有限公司 | Direct current supply scheduling circuit of terminal class based on charge-discharge protection of super capacitor |
| CN113872582A (en) * | 2021-09-28 | 2021-12-31 | 智新控制系统有限公司 | A high-side drive circuit and drive system |
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| CN210469110U (en) * | 2019-09-24 | 2020-05-05 | 广西新发展交通集团有限公司 | A discrete high-side drive circuit system |
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| EP0854573A2 (en) * | 1997-01-21 | 1998-07-22 | Ford Motor Company | Short circuit protection for high side driver |
| CN202841092U (en) * | 2012-08-07 | 2013-03-27 | 惠州市德赛西威汽车电子有限公司 | High-side switch output circuit with short-circuit protection function |
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| CN210469110U (en) * | 2019-09-24 | 2020-05-05 | 广西新发展交通集团有限公司 | A discrete high-side drive circuit system |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111600370A (en) * | 2019-12-27 | 2020-08-28 | 青岛鼎信通讯股份有限公司 | Direct current supply scheduling circuit of terminal class based on charge-discharge protection of super capacitor |
| CN111105747A (en) * | 2019-12-30 | 2020-05-05 | 大峡谷照明系统（苏州）股份有限公司 | Drive circuit and display device |
| CN113872582A (en) * | 2021-09-28 | 2021-12-31 | 智新控制系统有限公司 | A high-side drive circuit and drive system |
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