CN103944398A - Double-transistor flyback switching power supply with high voltage input - Google Patents

Double-transistor flyback switching power supply with high voltage input Download PDF

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Publication number
CN103944398A
CN103944398A CN201410146638.6A CN201410146638A CN103944398A CN 103944398 A CN103944398 A CN 103944398A CN 201410146638 A CN201410146638 A CN 201410146638A CN 103944398 A CN103944398 A CN 103944398A
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China
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power supply
double
diode
oxide
transformer
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CN201410146638.6A
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Chinese (zh)
Inventor
付靖
苏潮
黄关烧
陈铭
薛小波
黎裕文
周立专
孙文艺
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Guangdong Mingyang Longyuan Power Electronics Co Ltd
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Guangdong Mingyang Longyuan Power Electronics Co Ltd
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Priority to CN201410146638.6A priority Critical patent/CN103944398A/en
Publication of CN103944398A publication Critical patent/CN103944398A/en
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Abstract

The invention discloses a double-transistor flyback switching power supply with high voltage input. The double-transistor flyback switching power supply with high voltage input comprises a MOS transistor driving circuit, a double-MOS-transistor flyback main topological circuit, a contactor power supply circuit and a 24 V power supply circuit. The MOS transistor driving circuit is used for receiving a PWM signal output by an external controller and driving MOS transistors in the double-MOS-transistor flyback main topological circuit to be connected and disconnected; the double-MOS-transistor flyback main topological circuit directly obtains electricity from a power unit direct-current bus, and the double MOS transistors of the double-MOS-transistor flyback main topological circuit are controlled by the MOS transistor driving circuit to be connected and disconnected so that charging and flyback discharging of a transformer can be implemented; the contactor power supply circuit serves as a first load of flyback discharging of the double-MOS-transistor flyback main topological circuit; the 24 V power supply circuit serves as a second load of flyback discharging of the double-MOS-transistor flyback main topological circuit. According to the double-transistor flyback switching power supply with high voltage input, a double-transistor flyback switching power supply scheme is adopted, the electricity is directly obtained from the power unit direct-current bus and is converted into electricity with various voltage classes needed by a control system, an external isolation transformer is not needed, high voltage direct input can be achieved, the effect that the input voltage range is wide can be achieved, and the problems that the cost is high, the size is large and maintainability is poor are solved.

Description

A kind of double-transistor flyback formula Switching Power Supply of high input voltage
Technical field
The present invention relates to Switching Power Supply, especially a kind of double-transistor flyback formula Switching Power Supply of high input voltage.
Background technology
When power cell control system is worked in high-pressure frequency-conversion, SVG, need multiple voltage grade Power supply, supply power mode is all to utilize Switching Power Supply at present, major way is: 1, utilize the power supply of external high pressure isolating transformer, re-use regular tap power supply isolating transformer secondary voltage is converted to required voltage.2, utilize extraordinary integrated power supply power supply.
For the first scheme, its shortcoming is that price is high, high voltage isolating transformer volume is large, manufacturing process complexity, especially when Switching Power Supply input voltage range is very wide, input High Level DC Voltage and reach 1000V when above, traditional single-end flyback switching power supply, because metal-oxide-semiconductor will bear the input voltage of high twice, causes being difficult to find suitable switching tube, also can make whole power supply cost rise violently simultaneously.For first scheme, its shortcoming is that price is high, and Lead Time is long, and technical scheme is generally underground, maintainable poor.
Summary of the invention
For solving the problems of the technologies described above, the object of this invention is to provide one and can meet each grade power supply requirement in control system, realize high reliability and double-transistor flyback formula Switching Power Supply cheaply.
The technical solution used in the present invention is:
A double-transistor flyback formula Switching Power Supply for high input voltage, is characterized in that comprising:
One metal-oxide-semiconductor drive circuit, also drives metal-oxide-semiconductor conducting and the shutoff of two main topological circuits of metal-oxide-semiconductor inverse-excitation type for receiving the pwm signal of peripheral control unit output;
The main topological circuit of a pair of metal-oxide-semiconductor inverse-excitation type, it is power taking from power cell DC bus directly, and discharged with inverse-excitation type to implement transformer charging by the conducting of its pair of metal-oxide-semiconductor of metal-oxide-semiconductor drive circuit control and shutoff;
One contactor power-supplying circuit is the first load of the main topological circuit inverse-excitation type electric discharge of two metal-oxide-semiconductor inverse-excitation types;
One 24V power-supplying circuit is the second load of the main topological circuit inverse-excitation type electric discharge of two metal-oxide-semiconductor inverse-excitation types.
Further, described metal-oxide-semiconductor drive circuit comprises NPN type the first triode, positive-negative-positive the second triode, the first electric capacity, the first transformer, the first resistance, the second resistance, the base stage of this first triode and the second triode is connected with the pwm signal end of peripheral control unit output simultaneously, the emitter of the first triode is connected with emitter and first electric capacity of the second triode respectively, the collector electrode of the first triode connects power supply VCC, the grounded collector of the second triode; The winding two ends, former limit of the first transformer connect respectively the first electric capacity and ground, and on it, the upper end of secondary winding connects the first resistance, and the upper end of lower secondary winding connects the second resistance.
Further, the described pair of main topological circuit of metal-oxide-semiconductor inverse-excitation type comprises the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the first diode, the second diode, the second transformer; The grid of the first metal-oxide-semiconductor is connected with the first resistance, its source electrode is connected with the upper secondary winding lower end of the first transformer, the negative electrode of the second diode, the winding upper end, former limit of the second transformer respectively, and its drain electrode is connected with the negative electrode of power vd C and the first diode respectively; The grid of the second metal-oxide-semiconductor is connected with the second resistance, and its source electrode is connected with the lower secondary winding lower end of the first transformer and ground respectively, and it drains respectively and the anodic bonding of the second transformer primary side winding lower end and the first diode, the plus earth of the second diode.
Further, described contactor power-supplying circuit comprises the 3rd diode, the 3rd resistance, the second filter capacitor, the anode of the 3rd diode is connected with the upper secondary winding upper end of the second transformer, the negative electrode of the 3rd diode connects the 3rd resistance, the 3rd resistance other end is connected with the positive pole of the second filter capacitor, the negative pole of the second filter capacitor is connected with upper secondary winding lower end and the ground of the second transformer respectively, and the tie point Q1 between the 3rd resistance and the second filter capacitor is contactor power supply side.
Further, described contactor power-supplying circuit also comprises five diode in parallel with the second filter capacitor, and wherein, the negative electrode of the 5th diode is connected with the positive pole of the second filter capacitor.
Further, described 24V power-supplying circuit comprises the 4th diode and the 3rd filter capacitor, the anode of the 4th diode is connected with the lower secondary winding upper end of the second transformer, the negative electrode of the 4th diode is connected with the positive pole of the 3rd filter capacitor and the tie point Q2 of the two is 24V power supply side, and the negative pole of the 3rd filter capacitor is connected with lower secondary winding lower end and the ground of the second transformer.
Beneficial effect of the present invention:
The present invention adopts double-transistor flyback formula Switching Power Supply scheme, directly power taking from power cell DC bus, be converted to the required multiple voltage grade of control system, without external isolation transformer, can realize high pressure directly inputs, the effect of wide input voltage range, has solved again the problem that cost is high, volume is large, maintainability is poor simultaneously.
Brief description of the drawings
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described further.
Fig. 1 is the circuit theory diagrams of high input voltage double-transistor flyback formula Switching Power Supply of the present invention.
Embodiment
Shown in Fig. 1, a kind of double-transistor flyback formula Switching Power Supply of high input voltage, comprising:
Metal-oxide-semiconductor drive circuit 10, also drives metal-oxide-semiconductor conducting and the shutoff of two main topological circuits 20 of metal-oxide-semiconductor inverse-excitation type for receiving the pwm signal of peripheral control unit output; This metal-oxide-semiconductor drive circuit 10 comprises NPN type the first triode Q1, positive-negative-positive the second triode Q2, the first capacitor C 1, the first transformer TR1, the first resistance R 1, the second resistance R 2, the base stage of this first triode Q1 and the second triode Q2 is connected with the pwm signal end of peripheral control unit output simultaneously, the emitter of the first triode Q1 is connected with emitter and the first capacitor C 1 of the second triode Q2 respectively, the collector electrode of the first triode Q1 connects power supply VCC, the grounded collector of the second triode Q2; The winding TR1A two ends, former limit of the first transformer TR1 connect respectively the first capacitor C 1 and ground, and on it, the upper end of secondary winding TR1B connects the first resistance R 1, and the upper end of lower secondary winding TR1C connects the second resistance R 2;
The main topological circuit 20 of two metal-oxide-semiconductor inverse-excitation types, it is power taking from power cell DC bus directly, and power taking end is VDC, and the conducting that is subject to metal-oxide-semiconductor drive circuit 10 to control its pair of metal-oxide-semiconductor is discharged with inverse-excitation type to implement transformer charging with shutoff; This pair of main topological circuit 20 of metal-oxide-semiconductor inverse-excitation type comprises the first metal-oxide-semiconductor Q4, the second metal-oxide-semiconductor Q3, the first diode D1, the second diode D2, the second transformer TR2; The grid of the first metal-oxide-semiconductor Q4 is connected with the first resistance R 1, its source electrode is connected with the upper secondary winding TR1B lower end of the first transformer TR1, the negative electrode of the second diode D2, the winding TR2A upper end, former limit of the second transformer TR2 respectively, and its drain electrode is connected with the negative electrode of power vd C and the first diode D1 respectively; The grid of the second metal-oxide-semiconductor Q3 is connected with the second resistance R 2, its source electrode is connected with lower secondary winding TR1C lower end and the ground of the first transformer TR1 respectively, its drain electrode respectively with the anodic bonding of the second winding TR2A lower end, the former limit of transformer TR2 and the first diode D1, the plus earth of the second diode D2;
Contactor power-supplying circuit 30 is the first load of the main topological circuit 20 inverse-excitation type electric discharges of two metal-oxide-semiconductor inverse-excitation types; This contactor power-supplying circuit 30 comprises the 3rd diode D3, the 3rd resistance R 3, the second filter capacitor C2, the anode of the 3rd diode D3 is connected with the upper secondary winding TR2B upper end of the second transformer TR2, the negative electrode of the 3rd diode D3 connects the 3rd resistance R 3, the 3rd resistance R 3 other ends are connected with the positive pole of the second filter capacitor C2, the negative pole of the second filter capacitor C2 is connected with upper secondary winding TR2B lower end and the ground of the second transformer TR2 respectively, and the tie point Q1 between the 3rd resistance R 3 and the second filter capacitor C2 is contactor power supply side RELAY SUPPLY; In addition, contactor power-supplying circuit 30 also comprises the five diode D5 in parallel with the second filter capacitor C2, wherein, the negative electrode of the 5th diode D5 is connected with the positive pole of the second filter capacitor C2, the 5th diode D5 is contactor coil anti-paralleled diode, in the time of coil voltage reversal, play afterflow effect, protection load;
24V power-supplying circuit 40 is the second load of the main topological circuit 20 inverse-excitation type electric discharges of two metal-oxide-semiconductor inverse-excitation types; This 24V power-supplying circuit 40 comprises the 4th diode D4 and the 3rd filter capacitor C3, the anode of the 4th diode D4 is connected with the lower secondary winding TR2C upper end of the second transformer TR2, the negative electrode of the 4th diode D4 is connected with the positive pole of the 3rd filter capacitor C3 and the tie point Q2 of the two is 24V power supply side, and the negative pole of the 3rd filter capacitor C3 is connected with lower secondary winding TR2C lower end and the ground of the second transformer TR2.
Operation principle of the present invention is, pwm switching signal is from the input of A point, and through triode Q1, the push-pull configuration amplifying circuit that Q2 forms, to amplify drive current, by capacitor C 1, promotes driving transformer TR1, control switch pipe Q3, and Q4 opens simultaneously, turn-offs; Work as Q3, when Q4 opens, it is upper that input voltage is added in the former limit TR2A of transformer TR2, and TR2A the 5th pin is for negative, secondary TR2B the 6th pin is for negative, and TR2C the 11st pin is for negative, and now secondary diode D3, D4 end, without secondary current, former limit TR2A shows as an inductance, in charged state; Work as Q3, when Q4 disconnects, all former limits, secondary all change polarity (flyback) simultaneously, and secondary TR2B the 6th pin is being for just, and TR2C the 11st pin is being for just, secondary diode D3, D4 conducting, and the magnetic field energy being stored in the inductance of former limit is transferred to secondary.
Because of the effect of parasitic leakage inductance, in the time turn-offing, leakage inductance energy makes diode D1, and D2 is open-minded, and leakage inductance energy is returned to power supply; General single-end flyback switching power supply, uses an injectron, the maximum voltage that this switching tube bears in the time turn-offing) U dSmax=U dCmax+ N* (U o+ V d)+U pkmax+ U s, wherein U dCmaxfor the highest input direct voltage, U ofor output voltage, V dfor the pressure drop of output rectifier diode, N is transformer primary, the secondary turn ratio, U pkmaxfor reflected voltage, U sfor voltage security allowance; Therefore in the time that input voltage is higher, turn ratio N is larger, consider safety allowance, single-end flyback switching power supply switching tube need be selected to bear the device that maximum voltage is twice input voltage.And in two-tube reaction type Switching Power Supply structure, due to diode D1, the clamping action of D2, makes switching tube Q3, Q4 bears the Gao Buhui of voltage and exceedes input direct voltage.
Secondary winding TR2C is by diode D4, and filter capacitor C3, provides control system required 24V voltage.Secondary winding TR2B is by diode D3, resistance R 3, and filter capacitor C2, provides contactor control coil required voltage, and R3 is NTC thermistor, works the metering function while charging to capacitor C 2 while powering in circuit.
The foregoing is only preferential execution mode of the present invention, the present invention is not limited to above-mentioned execution mode, as long as within the technical scheme that realizes the object of the invention with basic identical means all belongs to protection scope of the present invention.

Claims (6)

1. a double-transistor flyback formula Switching Power Supply for high input voltage, is characterized in that comprising:
One metal-oxide-semiconductor drive circuit (10), also drives metal-oxide-semiconductor conducting and the shutoff of two main topological circuits of metal-oxide-semiconductor inverse-excitation type (20) for receiving the pwm signal of peripheral control unit output;
The main topological circuit of a pair of metal-oxide-semiconductor inverse-excitation type (20), it is power taking from power cell DC bus directly, and the conducting that is subject to metal-oxide-semiconductor drive circuit (10) to control its pair of metal-oxide-semiconductor is charged and inverse-excitation type electric discharge to implement transformer with shutoff;
One contactor power-supplying circuit (30) is the first load of the main topological circuits of two metal-oxide-semiconductor inverse-excitation types (20) inverse-excitation type electric discharge;
One 24V power-supplying circuit (40) is the second load of the main topological circuits of two metal-oxide-semiconductor inverse-excitation types (20) inverse-excitation type electric discharge.
2. the double-transistor flyback formula Switching Power Supply of a kind of high input voltage according to claim 1, it is characterized in that: described metal-oxide-semiconductor drive circuit (10) comprises NPN type the first triode (Q1), positive-negative-positive the second triode (Q2), the first electric capacity (C1), the first transformer (TR1), the first resistance (R1), the second resistance (R2), the base stage of this first triode (Q1) and the second triode (Q2) is connected with the pwm signal end of peripheral control unit output simultaneously, the emitter of the first triode (Q1) is connected with emitter and first electric capacity (C1) of the second triode (Q2) respectively, the collector electrode of the first triode (Q1) connects power supply VCC, the grounded collector of the second triode (Q2), the two ends, former limit winding (TR1A) of the first transformer (TR1) connect respectively the first electric capacity (C1) and ground, and on it, the upper end of secondary winding (TR1B) connects the first resistance (R1), and the upper end of lower secondary winding (TR1C) connects the second resistance (R2).
3. the double-transistor flyback formula Switching Power Supply of a kind of high input voltage according to claim 2, is characterized in that: the described pair of main topological circuit of metal-oxide-semiconductor inverse-excitation type (20) comprises the first metal-oxide-semiconductor (Q4), the second metal-oxide-semiconductor (Q3), the first diode (D1), the second diode (D2), the second transformer (TR2); The grid of the first metal-oxide-semiconductor (Q4) is connected with the first resistance (R1), its source electrode is connected with upper secondary winding (TR1B) lower end of the first transformer (TR1), the negative electrode of the second diode (D2), the upper end, former limit winding (TR2A) of the second transformer (TR2) respectively, and its drain electrode is connected with the negative electrode of power vd C and the first diode (D1) respectively; The grid of the second metal-oxide-semiconductor (Q3) is connected with the second resistance (R2), its source electrode is connected with lower secondary winding (TR1C) lower end and the ground of the first transformer (TR1) respectively, its drain electrode respectively with the anodic bonding of winding (TR2A) lower end, the former limit of the second transformer (TR2) and the first diode (D1), the plus earth of the second diode (D2).
4. the double-transistor flyback formula Switching Power Supply of a kind of high input voltage according to claim 3, it is characterized in that: described contactor power-supplying circuit (30) comprises the 3rd diode (D3), the 3rd resistance (R3), the second filter capacitor (C2), the anode of the 3rd diode (D3) is connected with upper secondary winding (TR2B) upper end of the second transformer (TR2), the negative electrode of the 3rd diode (D3) connects the 3rd resistance (R3), the 3rd resistance (R3) other end is connected with the positive pole of the second filter capacitor (C2), the negative pole of the second filter capacitor (C2) is connected with upper secondary winding (TR2B) lower end and the ground of the second transformer (TR2) respectively, tie point Q1 between the 3rd resistance (R3) and the second filter capacitor (C2) is contactor power supply side.
5. the double-transistor flyback formula Switching Power Supply of a kind of high input voltage according to claim 4, it is characterized in that: described contactor power-supplying circuit (30) also comprises five diode (D5) in parallel with the second filter capacitor (C2), wherein, the negative electrode of the 5th diode (D5) is connected with the positive pole of the second filter capacitor (C2).
6. the double-transistor flyback formula Switching Power Supply of a kind of high input voltage according to claim 3, it is characterized in that: described 24V power-supplying circuit (40) comprises the 4th diode (D4) and the 3rd filter capacitor (C3), the anode of the 4th diode (D4) is connected with lower secondary winding (TR2C) upper end of the second transformer (TR2), the negative electrode of the 4th diode (D4) is connected with the positive pole of the 3rd filter capacitor (C3) and the tie point Q2 of the two is 24V power supply side, the negative pole of the 3rd filter capacitor (C3) is connected with lower secondary winding (TR2C) lower end and the ground of the second transformer (TR2).
CN201410146638.6A 2014-04-11 2014-04-11 Double-transistor flyback switching power supply with high voltage input Pending CN103944398A (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105515396A (en) * 2016-02-02 2016-04-20 无锡隆玛科技股份有限公司 Photovoltaic power module
CN105578656A (en) * 2016-01-27 2016-05-11 张家港麦智电子科技有限公司 LED constant-current driving power supply with 120-347V AC wide input voltage range
CN106130328A (en) * 2016-08-20 2016-11-16 嘉兴国电通新能源科技有限公司 A kind of double-tube series inverse-excitation type switch power-supply
CN109586561A (en) * 2018-10-30 2019-04-05 上海沪工焊接集团股份有限公司 A kind of two-tube driving circuit and its control method
CN111786559A (en) * 2019-04-03 2020-10-16 深圳市正弦电气股份有限公司 Double-tube flyback power circuit
CN112620842A (en) * 2020-12-15 2021-04-09 南京理工大学 Flyback pulse power supply for wire cut electrical discharge machining
CN113541448A (en) * 2021-07-22 2021-10-22 山东鲁软数字科技有限公司智慧能源分公司 Magnetic isolation multi-input multi-output flexible direct current power transmission supply circuit

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202759386U (en) * 2012-08-09 2013-02-27 深圳Tcl新技术有限公司 Flyback switch power supply circuit and flyback switch power supply
CN203056996U (en) * 2012-12-27 2013-07-10 易泰帝传动技术(烟台)有限公司 Multipath output double-transistor flyback isolation switch power supply apparatus
CN203562960U (en) * 2013-11-20 2014-04-23 上海追日电气有限公司 High-frequency switching power supply, active filter and inverter
CN203840205U (en) * 2014-04-11 2014-09-17 广东明阳龙源电力电子有限公司 Double transistor flyback switching power supply with high voltage input

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202759386U (en) * 2012-08-09 2013-02-27 深圳Tcl新技术有限公司 Flyback switch power supply circuit and flyback switch power supply
CN203056996U (en) * 2012-12-27 2013-07-10 易泰帝传动技术(烟台)有限公司 Multipath output double-transistor flyback isolation switch power supply apparatus
CN203562960U (en) * 2013-11-20 2014-04-23 上海追日电气有限公司 High-frequency switching power supply, active filter and inverter
CN203840205U (en) * 2014-04-11 2014-09-17 广东明阳龙源电力电子有限公司 Double transistor flyback switching power supply with high voltage input

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105578656A (en) * 2016-01-27 2016-05-11 张家港麦智电子科技有限公司 LED constant-current driving power supply with 120-347V AC wide input voltage range
CN105515396A (en) * 2016-02-02 2016-04-20 无锡隆玛科技股份有限公司 Photovoltaic power module
CN105515396B (en) * 2016-02-02 2018-04-10 无锡隆玛科技股份有限公司 Photo-voltaic power supply module
CN106130328A (en) * 2016-08-20 2016-11-16 嘉兴国电通新能源科技有限公司 A kind of double-tube series inverse-excitation type switch power-supply
CN109586561A (en) * 2018-10-30 2019-04-05 上海沪工焊接集团股份有限公司 A kind of two-tube driving circuit and its control method
CN111786559A (en) * 2019-04-03 2020-10-16 深圳市正弦电气股份有限公司 Double-tube flyback power circuit
CN112620842A (en) * 2020-12-15 2021-04-09 南京理工大学 Flyback pulse power supply for wire cut electrical discharge machining
CN112620842B (en) * 2020-12-15 2022-06-28 南京理工大学 Flyback pulse power supply for wire cut electrical discharge machining
CN113541448A (en) * 2021-07-22 2021-10-22 山东鲁软数字科技有限公司智慧能源分公司 Magnetic isolation multi-input multi-output flexible direct current power transmission supply circuit

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