CN106712497B - A kind of cross-coupling charge pump - Google Patents
A kind of cross-coupling charge pump Download PDFInfo
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- CN106712497B CN106712497B CN201611261657.9A CN201611261657A CN106712497B CN 106712497 B CN106712497 B CN 106712497B CN 201611261657 A CN201611261657 A CN 201611261657A CN 106712497 B CN106712497 B CN 106712497B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
The present invention provides a kind of cross-coupling charge pump, comprising: boost module；Transmission module includes the first transmitting switch and the second transmitting switch, and the input terminal of the first transmitting switch and the second transmitting switch is separately connected the first output end and second output terminal of boost module；First transmitting switch is connected with the output end of the second transmitting switch；The grid end of first transmitting switch and second transmitting switch is separately connected the first grid voltage control circuit and the second grid voltage control circuit, for the grid swing of the first transmitting switch and the second transmitting switch to be increased to 2 times of supply voltages.The present invention only just completes the function of increasing the grid swing of PMOS transmitting switch with 2 MOSFET, occupies smaller chip area.Moreover, underlayer voltage of the control to pipe, reduces dual loss when subthreshold value and conducting；In addition, the configuration of the present invention is simple, signal stabilization, circuit topology high degree of symmetry, effectively reduce the influence of the non-ideal factors bring such as circuit mismatch, have good robustness.
Description
Technical field
The present invention relates to field of power management, more particularly to a kind of cross-coupling charge pump.
Background technique
AMOLED (Active Matrix/Organic Light Emitting Diode, active-matrix organic light emission two
Polar body panel) display panel driving chip major function receive MCU (Micro Control Unit, micro-control unit) passed
The display for the number format passed and control signal provide the grid driving voltage opened line by line, and control pixel to display panel
The source driving voltage of gray scale, grid driving voltage needed for the small-medium size AMOLED in conventional portable device is ± (3~8) V,
Source driving voltage is 0.3~4.2V.These driving voltages are generated by the power-supply management system (MPS) being integrated in driving chip
's.Wherein, power-supply management system divides according to working method, is broadly divided into three classes, respectively low-voltage-drop linear voltage regulator
(LDO), inductive type Switching Power Supply and capacitive switches power supply, and capacitive switches power supply is also known as charge pump.
For the application of portable communication apparatus, for inductive type Switching Power Supply, low-voltage drop linear pressure stabilizing
Not only area occupied is small for device and charge pump, but also designs without magnetic, has certain advantage, but LDO can be only done decompression and turn
It changes, charge pump can be then boosted on a large scale for supply voltage, be depressured and back-pressure, therefore as portable communication apparatus
The best solution of middle display driver chip power-supply management system.
Charge pump is divided into Dickson charge pump topology according to different topological structures, and ladder is topological, Fibonacci topology,
The structures such as capacitor mixed connection topology and cross-coupling topology, wherein the cross-coupling type charge of automatic reverse biasing can be provided
Pump shows higher efficiency and smaller ripple.As shown in Figure 1, existing cross-coupling type charge pump circuit includes: first
Cross-coupled pair, the second cross-coupled pair and two capacitors.Wherein, the first cross-coupled pair be NMOS tube MN1 and MN2,
NMOS tube MN1 connects input voltage vin with the drain terminal of MN2, and the source of NMOS tube MN1 connects the top crown of a capacitor, the capacitor
Bottom crown connect clock signal clk 1；The source of NMOS tube MN2 connects the top crown of a capacitor, the bottom crown connection of the capacitor
Clock signal clk 2.The top crown of two capacitors is separately connected the input terminal of the second cross-coupled pair, and the second cross-coupled pair is
PMOS tube MP1 and MP2, PMOS tube MP1 is connected with the output end of MP2, and connects output capacitance Cout and load LOAD.PMOS tube
The gate source voltage amplitude of oscillation of MP1 and MP2 is between Vin and 2Vin, according to the current formula of MOSFET:
If increasing gate source voltage amplitude of oscillation VGS, then the conductivity of above-mentioned transmitting switch will necessarily improve, to improve charge
The efficiency of transmission of pump.Therefore, it is transported extensively using the modified form cross-coupling charge pump of Level-Shift (level translator)
With the modified form cross-coupling charge pump of Level-Shift can increase the gate source voltage amplitude of oscillation, but Level-Shift needs account for
With biggish chip area, and due to its working principle is that be based on positive feedback, if occurring mismatching in manufacturing process etc. non-
Desirable factors, the regenerative feedback loop of circuit can not probably work, therefore the stability of the circuit is poor.
In capacitive direct current transducer (DC-DC), the conductivity of transmitting switch has important shadow to the transfer efficiency of circuit
It rings.If conductivity is lower, there will be more voltage loss on the equivalent resistance of transmitting switch, to reduce transfer efficiency.
The use of level translator (Level-Shift) can improve the problem, but the module chip occupying area is larger, and its work
Make to be based on regenerative feedback loop, is easy to be influenced by circuit mismatch, robustness is poor.
Therefore, on the basis of being not take up chip large area, the conductivity of transmitting switch how is improved, improves conversion effect
Rate improves robustness and has become one of those skilled in the art's urgent problem to be solved.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of cross-coupling charge pumps, use
In solving in the prior art the problems such as charge pump transfer efficiency is low, chip occupying area is big, poor robustness.
In order to achieve the above objects and other related objects, the present invention provides a kind of cross-coupling charge pump, the intersection coupling
Charge pump is closed to include at least:
Boost module, for boosting to supply voltage；
Transmission module is connected to the output end of the boost module, for exporting the voltage after boosting；
Wherein, the transmission module includes the first transmitting switch and the second transmitting switch, first transmitting switch and institute
The input terminal for stating the second transmitting switch is separately connected the first output end and second output terminal of the boost module；Described first passes
Defeated switch is connected with the output end of second transmitting switch, as output end；First transmitting switch and described second passes
The grid end of defeated switch is separately connected the first grid voltage control circuit and the second grid voltage control circuit, is used for first transmitting switch
2 times of supply voltages are increased to the grid swing of second transmitting switch.
Preferably, first grid voltage control circuit and second grid voltage control circuit respectively include: lower amplitude of oscillation transmission
Pipe and upper amplitude of oscillation transfer tube, the lower amplitude of oscillation transfer tube and the upper amplitude of oscillation transfer tube are connected in series, the lower amplitude of oscillation transfer tube
Source ground connection, the upper amplitude of oscillation transfer tube source connection transmitting switch output end, the grid end of the lower amplitude of oscillation transfer tube
Connect clock control signal, the input terminal of the grid end connection transmitting switch of the upper amplitude of oscillation transfer tube.
Preferably, the boost module includes first pair of pipe, second pair of pipe, first capacitor and second capacitor, and described first
Pipe is connect with second pair of pipe cross-coupling, it is described first pair pipe connect with the drain terminal of second pair of pipe supply voltage,
Source is separately connected the top crown of the first capacitor and second capacitor, when the bottom crown of the first capacitor connects first
Clock signal, the bottom crown connection second clock of second capacitor control signal, the first capacitor and second electricity
The top crown of appearance is as output end.
It is highly preferred that the boost module further includes clock when being connected to first underlayer voltage at first pair of tube bottom end
Circuit processed and the second underlayer voltage clock control circuit for being connected to second pair of tube bottom end, the first underlayer voltage clock
Control circuit and the second underlayer voltage clock control circuit respectively include: upper trombone slide and lower trombone slide, the upper trombone slide and institute
It states lower trombone slide to be connected in series, the source of the upper trombone slide connects supply voltage, the source ground connection of the lower trombone slide, the upper trombone slide
It is connected with the grid end of the lower trombone slide and connect control signal, the control signal of the first underlayer voltage clock control circuit is
First clock control signal, the control signal of the second underlayer voltage clock control circuit are that second clock controls signal.
It is highly preferred that the transmission module further includes the first substrate control pipe and the second substrate control pipe, first lining
The drain terminal of bottom control pipe connects the input terminal of first transmitting switch, source connects the bottom end of first transmitting switch, grid
End connects the input terminal of second transmitting switch；The drain terminal of the second substrate control pipe connects second transmitting switch
Input terminal, source connect the bottom end of second transmitting switch, grid end connects the input terminal of first transmitting switch.
As described above, cross-coupling charge pump of the invention, has the advantages that
The grid voltage control circuit that cross-coupling charge pump of the invention is only constituted with 2 MOSFET, which just completes, increases PMOS
The function of the grid swing of transmitting switch occupies smaller chip area.Moreover, increasing the substrate electricity to NMOS transmitting switch
Voltage-controlled system reduces dual loss when subthreshold value and conducting.In addition, cross-coupling charge pump construction of the invention is simple, letter
Number stabilization, and circuit topology high degree of symmetry effectively reduce the influence of the non-ideal factors bring such as circuit mismatch, have fine
Robustness.
Detailed description of the invention
Fig. 1 is shown as the structural schematic diagram of cross-coupling type charge pump circuit in the prior art.
Fig. 2 is shown as the structural schematic diagram of cross-coupling charge pump of the invention.
Component label instructions
1 cross-coupling charge pump
11 boost modules
111 first underlayer voltage clock control circuits
112 second underlayer voltage clock control circuits
12 transmission modules
The voltage-controlled system electricity of 121 first grids
122 second grid voltage control circuits
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Please refer to Fig. 2.It should be noted that illustrating what only the invention is illustrated in a schematic way provided in the present embodiment
Basic conception, only shown in schema then with related component in the present invention rather than component count, shape when according to actual implementation
And size is drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its assembly layout
Kenel may also be increasingly complex.
As shown in Fig. 2, the present invention provides a kind of cross-coupling charge pump 1, the cross-coupling charge pump 1 is included at least:
Boost module 11 and transmission module 12.
As shown in Fig. 2, the boost module 11 is connected to the input terminal of the transmission module 12, for supply voltage
Vin boosts.
Specifically, as shown in Fig. 2, the boost module 11 includes first couple of pipe Mn1, second couple of pipe Mn2, the first substrate electricity
Press clock control circuit 111, the second underlayer voltage clock control circuit 112, first capacitor C1 and the second capacitor C2.
More specifically, first couple of pipe Mn1 is connect with second pair of pipe Mn2 cross-coupling, and in the present embodiment, institute
Stating first couple of pipe Mn1 and second couple of pipe Mn2 is NMOS tube, the drain terminal connection supply voltage Vin of first couple of pipe Mn1,
Source, the source that grid end connects second couple of pipe Mn2 connect the grid end of second couple of pipe Mn2；Second couple of pipe Mn2's
Source, the source that drain terminal connection supply voltage Vin, grid end connect first couple of pipe Mn1 connect the grid of first couple of pipe Mn1
End.
More specifically, the first underlayer voltage clock control circuit 111 is connected to the bottom end of first couple of pipe Mn1,
Including the lower trombone slide Mn3 of trombone slide Mp3 and first on first, trombone slide Mp3 connects company with described first time trombone slide Mn3 on described first
It connects, in the present embodiment, trombone slide Mp3 is PMOS tube on described first, and described first descends trombone slide Mn3 for NMOS tube, described first
Source connection supply voltage Vin, the drain terminal of upper trombone slide Mp3 connects the drain terminal of the described first lower trombone slide Mn3 and connects as output end
Connect the bottom end of first couple of pipe Mn1, the source ground connection of the described first lower trombone slide Mn3, trombone slide Mp3 and described the on described first
Once the grid end of trombone slide Mn3 connects the first clock control signal CLK1.The second voltage clock control circuit 112 is connected to institute
State the bottom end of second couple of pipe Mn2, including the lower trombone slide Mn4 of trombone slide Mp4 and second on second, on described second trombone slide Mp4 with it is described
Second lower trombone slide Mn4 is connected in series, and in the present embodiment, trombone slide Mp4 is PMOS tube, the described second lower trombone slide on described second
Mn4 is NMOS tube, the source connection supply voltage Vin of trombone slide Mp4, the lower trombone slide Mn4 of drain terminal connection described second on described second
Drain terminal and the bottom end of two couples of pipe Mn4 is connected as output end, the source ground connection of the described second lower trombone slide Mn4, described the
Trombone slide Mp4 connects second clock control signal CLK2 with the grid end of the described second lower trombone slide Mn4 on two.
More specifically, the top crown of the first capacitor C1 connects the source of first couple of pipe Mn1 and as the liter
The second output terminal of die block 11, bottom crown connect the first clock control signal CLK1.The upper pole of the second capacitor C2
Plate connects the source of second couple of pipe Mn2 and the first output end as the boost module 11, bottom crown connection described the
Two clock control signal CLK2.
As shown in Fig. 2, the transmission module 12 is connected to the output end of the boost module 11, after exporting boosting
Voltage.
Specifically, as shown in Fig. 2, the transmission module 12 includes the first transmitting switch Mp1, the second transmitting switch Mp2, the
One grid voltage control circuit 121, the second grid voltage control circuit 122, the first substrate control pipe Mp5 and the second substrate control pipe Mp6.
More specifically, the input terminal of the first transmitting switch Mp1 and the second transmitting switch Mp2 be separately connected it is described
The first output end and second output terminal of boost module 11, the first transmitting switch Mp1 and the second transmitting switch Mp2's
Output end is connected, as output end.In the present embodiment, the first transmitting switch Mp1 and the second transmitting switch Mp2 is
PMOS tube, source is as input terminal, and drain terminal is as output end.
More specifically, first grid voltage control circuit 121 is connected to the grid end of the first transmitting switch Mp1, it is described
First grid voltage control circuit 121 includes: amplitude of oscillation transfer tube Mp7 series connection on the first lower amplitude of oscillation transfer tube Mn5 and first, described
Amplitude of oscillation transfer tube Mp7 on first lower amplitude of oscillation transfer tube Mn5 and described first, in the present embodiment, the described first lower amplitude of oscillation transmission
Pipe Mn5 is NMOS tube, and amplitude of oscillation transfer tube Mp7 is PMOS tube on described first, and the source of the described first lower amplitude of oscillation transfer tube Mn5 connects
Ground, drain terminal connect the drain terminal of amplitude of oscillation transfer tube Mp7 on described first and connect the first transmitting switch Mp1's as output end
Grid end, the source of amplitude of oscillation transfer tube Mp7 connects the output end of the first transmitting switch Mp1 on described first, under described first
The grid end of amplitude of oscillation transfer tube Mn5 connects the second clock and controls signal CLK2, the grid end of amplitude of oscillation transfer tube Mp7 on described first
Connect the input terminal of the first transmitting switch Mp1.Second grid voltage control circuit 122 is connected to second transmitting switch
The grid end of Mp2, second grid voltage control circuit 122 include: amplitude of oscillation transfer tube on the second lower amplitude of oscillation transfer tube Mn6 and second
Mp8 is connected in series, amplitude of oscillation transfer tube Mp8 on the described second lower amplitude of oscillation transfer tube Mn6 and described second, in the present embodiment, institute
Stating the second lower amplitude of oscillation transfer tube Mn6 is NMOS tube, and amplitude of oscillation transfer tube Mp8 is PMOS tube, the described second lower amplitude of oscillation on described second
The source ground connection of transfer tube Mn5, drain terminal connect on described second the drain terminal of amplitude of oscillation transfer tube Mp8 and as described in output end connections
The grid end of second transmitting switch Mp2, the source of amplitude of oscillation transfer tube Mp8 connects the second transmitting switch Mp2's on described second
The grid end of output end, the described second lower amplitude of oscillation transfer tube Mn6 connects the first clock control signal CLK1, puts on described second
The grid end of width transfer tube Mp8 connects the input terminal of the second transmitting switch Mp2.First grid voltage control circuit 121 and institute
The second grid voltage control circuit 122 is stated to be used for the grid swing of the first transmitting switch Mp1 and the second transmitting switch Mp2
Increase to 2 times of supply voltage Vin.
More specifically, in the present embodiment, the first substrate control pipe Mp5 is PMOS tube, the first substrate control
The drain terminal of pipe Mp5 connects the input terminal of the first transmitting switch Mp1, source connects the first transmitting switch Mp1 and described
The bottom end of amplitude of oscillation transfer tube Mp7 on first, grid end connect the input terminal of the second transmitting switch Mp2.In the present embodiment, institute
Stating the second substrate control pipe Mp6 is PMOS tube, and the drain terminal of the second substrate control pipe Mp6 connects second transmitting switch
The input terminal of Mp2, source connect the bottom end of amplitude of oscillation transfer tube Mp8 on the second transmitting switch Mp2 and described second, grid end connects
Connect the input terminal of the first transmitting switch Mp1.
It is the first transmitting switch Mp1, the second transmitting switch Mp2, amplitude of oscillation transfer tube Mp7 on described first, described
The substrate of amplitude of oscillation transfer tube Mp8, first substrate control pipe Mp5 and second substrate control pipe Mp6 connect lining on second
Bottom capacitor CB。
The output end connection output capacitance Cout and load LOAD of the transmission module 12.
The working principle of the cross-coupling charge pump 1 is as follows:
Since there are bulk effects by MOSFET, when source serves as a contrast voltage VSBWhen increase, MOSFET width of depletion region increases, threshold voltage
Increase, expression are as follows:
Wherein, γ is body-effect coefficient.
So trombone slide Mp3 cut-off, described on described first when the first clock control signal CLK1 is high level
First lower trombone slide Mn3 conducting, the underlayer voltage of first couple of pipe Mn1 are pulled down to ground level, the source of first couple of pipe Mn1
Serve as a contrast voltage VSBIncrease, threshold voltage VTHIncrease, at this time the gate source voltage V of first couple of pipe Mn1GSFor low level, described first
Pipe Mn1 is switched and is ended, simultaneously because threshold voltage VTHIncrease, the subthreshold value for being greatly reduced first couple of pipe Mn1 is led
Electrical loss.The lower electrode of the first capacitor C1 is high level (Vin) by ground level jump, since the voltage at capacitor both ends cannot
Mutation, therefore the top crown of the first capacitor C1 is 2Vin by Vin jump.
The first clock control signal CLK1 and the second clock control signal CLK2 be inverted signal, i.e., described second
Clock control signal CLK2 is low level, trombone slide Mp4 conducting on described second, the described second lower trombone slide Mn4 cut-off, described second
Supply voltage Vin is essentially pulled up to the underlayer voltage of pipe Mn2, the source of second couple of pipe Mn2 serves as a contrast voltage VSBIt is reduced to negative voltage,
Threshold voltage VTHReduce, at this time the gate source voltage V of second couple of pipe Mn2GSFor high level, second couple of pipe Mn2 switch is beaten
It opens, while according to formula (1), low threshold voltage increases the conducting electric current of switching tube, reduces voltage loss when conducting.Institute
It states the second capacitor C2 and is in charged state, top crown is charged to supply voltage Vin.
At this point, the first output end Vp1 of the boost module 11 is low level (Vin), second output terminal Vp2 is high level
(2Vin), the described first lower amplitude of oscillation transfer tube Mn5 end, amplitude of oscillation transfer tube Mp7 conducting on described first, then first transmission
Switch Mp1 cut-off；Described second lower amplitude of oscillation transfer tube Mn6 conducting, amplitude of oscillation transfer tube Mp8 cut-off on described second, then described the
Two transmitting switch Mp2 conducting, the 2Vin of the second output terminal of the boost module 11 are exported, while second substrate controls
Pipe Mp6 conducting, makes the underlayer voltage of the second transmitting switch Mp2 be pulled high to Vp2, i.e. 2Vin, effectively prevents because of drain terminal
Voltage, which increases, generates latch-up.
When the first clock control signal CLK1 is low level, the second clock control signal CLK2 is high level
When, working principle is similar, will not repeat them here.
Cross-coupling charge pump of the invention realizes the grid swing for increasing PMOS transmitting switch by grid voltage control circuit
Function, the grid voltage control circuit only uses 2 MOSFET to constitute, occupies smaller chip area；By being transmitted to PMOS
Latch-up is eliminated in the control of switch substrate；Increase the control of underlayer voltage clock control circuit simultaneously to the underlayer voltage of pipe, subtracts
Dual loss when small subthreshold value and conducting.In addition, cross-coupling charge pump construction of the invention is simple, signal stabilization, and
And circuit topology high degree of symmetry, the influence of the non-ideal factors bring such as circuit mismatch is effectively reduced, there is good robustness.
In conclusion the present invention provides a kind of cross-coupling charge pump, comprising: boost module, for supply voltage into
Row boosting；Transmission module is connected to the output end of the boost module, for exporting the voltage after boosting；Wherein, the transmission
Module includes the first transmitting switch and the second transmitting switch, the input terminal of first transmitting switch and second transmitting switch
It is separately connected the first output end and second output terminal of the boost module；First transmitting switch is opened with second transmission
The output end of pass is connected, as output end；The grid end of first transmitting switch and second transmitting switch is separately connected the
One grid voltage control circuit and the second grid voltage control circuit, for by the grid of first transmitting switch and second transmitting switch
The pressure amplitude of oscillation increases to 2 times of supply voltages.The grid voltage control circuit that cross-coupling charge pump of the invention only uses 2 MOSFET to constitute
The function of increasing the grid swing of PMOS transmitting switch is just completed, smaller chip area is occupied.Moreover, increasing to NMOS
The underlayer voltage of transmitting switch controls, and reduces dual loss when subthreshold value and conducting.In addition, cross-coupling electricity of the invention
Lotus pump configuration is simple, signal stabilization, and circuit topology high degree of symmetry, effectively reduces the non-ideal factors such as circuit mismatch and brings
Influence, have good robustness.So the present invention effectively overcomes various shortcoming in the prior art and has high industrial
Utility value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (4)
1. a kind of cross-coupling charge pump, which is characterized in that the cross-coupling charge pump includes at least:
Boost module, for boosting to supply voltage；
Transmission module is connected to the output end of the boost module, for exporting the voltage after boosting；
The transmission module includes the first transmitting switch and the second transmitting switch, and first transmitting switch and described second are transmitted
The input terminal of switch is separately connected the first output end and second output terminal of the boost module；First transmitting switch and institute
The output end for stating the second transmitting switch is connected, as output end；The grid of first transmitting switch and second transmitting switch
End is separately connected the first grid voltage control circuit and the second grid voltage control circuit, is used for first transmitting switch and described second
The grid swing of transmitting switch increases to 2 times of supply voltages；
Wherein, first grid voltage control circuit and second grid voltage control circuit respectively include: lower amplitude of oscillation transfer tube and upper
Amplitude of oscillation transfer tube, the lower amplitude of oscillation transfer tube and the upper amplitude of oscillation transfer tube are connected in series, the source of the lower amplitude of oscillation transfer tube
Ground connection, the output end of the source connection transmitting switch of the upper amplitude of oscillation transfer tube, when the grid end of the lower amplitude of oscillation transfer tube connects
Clock signal, the input terminal of the grid end connection transmitting switch of the upper amplitude of oscillation transfer tube.
2. cross-coupling charge pump according to claim 1, it is characterised in that: the boost module include first pair pipe,
Second pair of pipe, first capacitor and the second capacitor, first pair of pipe are connect with second pair of pipe cross-coupling, and described first pair
It manages and with the drain terminal of second pair of pipe connect supply voltage, source is separately connected the top crown and described second of the first capacitor
The top crown of capacitor, the bottom crown of the first capacitor connect the first clock control signal, and the bottom crown of second capacitor connects
Second clock control signal is connect, the top crown of the top crown of the first capacitor and second capacitor is as output end.
3. cross-coupling charge pump according to claim 2, it is characterised in that: the boost module further includes being connected to institute
The the second substrate electricity stated the first underlayer voltage clock control circuit at first pair of tube bottom end and be connected to second pair of tube bottom end
Press clock control circuit, the first underlayer voltage clock control circuit and the second underlayer voltage clock control circuit difference
It include: upper trombone slide and lower trombone slide, the upper trombone slide and the lower trombone slide are connected in series, the source connection power supply electricity of the upper trombone slide
Pressure, the source ground connection of the lower trombone slide, the upper trombone slide are connected with the grid end of the lower trombone slide and connect control signal, and described the
The control signal of one underlayer voltage clock control circuit is the first clock control signal, the second underlayer voltage clock control electricity
The control signal on road is that second clock controls signal.
4. cross-coupling charge pump according to claim 1, it is characterised in that: the transmission module further includes the first substrate
Control pipe and the second substrate control pipe, the drain terminal of first substrate control pipe connect the input terminal of first transmitting switch,
Source connects the bottom end of first transmitting switch, grid end connects the input terminal of second transmitting switch；Second substrate
The drain terminal of control pipe connects the input terminal of second transmitting switch, source connects the bottom end of second transmitting switch, grid end
Connect the input terminal of first transmitting switch.
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| US10250133B2 (en) * | 2017-07-18 | 2019-04-02 | Stmicroelectronics International N.V. | Single-stage CMOS-based voltage quadrupler circuit |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101662208A (en) * | 2008-08-26 | 2010-03-03 | 天利半导体（深圳）有限公司 | Charge pump circuit capable of realizing positive and negative high voltages |
| CN102723859A (en) * | 2012-06-14 | 2012-10-10 | 浙江大学 | Charge pump based on voltage multiplier cascade connection |
| US20150229207A1 (en) * | 2014-02-07 | 2015-08-13 | The Hong Kong University Of Science And Technology | Charge pumping apparatus for low voltage and high efficiency operation |
| CN106026637A (en) * | 2016-07-06 | 2016-10-12 | 西安紫光国芯半导体有限公司 | Charge pump circuit and its single-stage circuits |
-
2016
- 2016-12-30 CN CN201611261657.9A patent/CN106712497B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101662208A (en) * | 2008-08-26 | 2010-03-03 | 天利半导体（深圳）有限公司 | Charge pump circuit capable of realizing positive and negative high voltages |
| CN102723859A (en) * | 2012-06-14 | 2012-10-10 | 浙江大学 | Charge pump based on voltage multiplier cascade connection |
| US20150229207A1 (en) * | 2014-02-07 | 2015-08-13 | The Hong Kong University Of Science And Technology | Charge pumping apparatus for low voltage and high efficiency operation |
| CN106026637A (en) * | 2016-07-06 | 2016-10-12 | 西安紫光国芯半导体有限公司 | Charge pump circuit and its single-stage circuits |
Non-Patent Citations (1)
| Title |
|---|
| A Fully Integrated Multistage Cross-Coupled Voltage Multiplier With NO Reversion Power Loss in a Standard CMOS Process;Xiaojian Yu等;《IEEE》;20160811;第737-741页 * |
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| Publication number | Publication date |
|---|---|
| CN106712497A (en) | 2017-05-24 |
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