CN105793328B - 使包含氢硅烷的组合物聚合和随后将该聚合物用于制备含硅层的方法 - Google Patents

使包含氢硅烷的组合物聚合和随后将该聚合物用于制备含硅层的方法 Download PDF

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Publication number
CN105793328B
CN105793328B CN201480066856.7A CN201480066856A CN105793328B CN 105793328 B CN105793328 B CN 105793328B CN 201480066856 A CN201480066856 A CN 201480066856A CN 105793328 B CN105793328 B CN 105793328B
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Prior art keywords
hydrosilane
composition
substrate
polymerization
reaction vessel
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Expired - Fee Related
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CN201480066856.7A
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Chinese (zh)
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CN105793328A (zh
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A.P.卡迪茨贝迪尼
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Forschungszentrum Juelich GmbH
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Forschungszentrum Juelich GmbH
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/06—Preparatory processes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/122—Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Silicon Compounds (AREA)
  • Silicon Polymers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Formation Of Insulating Films (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
CN201480066856.7A 2013-12-11 2014-11-26 使包含氢硅烷的组合物聚合和随后将该聚合物用于制备含硅层的方法 Expired - Fee Related CN105793328B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102013020518.2 2013-12-11
DE102013020518.2A DE102013020518A1 (de) 2013-12-11 2013-12-11 Verfahren und Vorrichtung zur Polymerisation einer Zusammensetzung enthaltend Hydridosilane und anschließenden Verwendung der Polymerisate zur Herstellung von siliziumhaltigen Schichten
PCT/DE2014/000617 WO2015085980A1 (de) 2013-12-11 2014-11-26 Verfahren zur polymerisation einer zusammensetzung enthaltend hydridosilane und anschliessenden verwendung der polymerisate zur herstellung von siliciumhaltigen schichten

Publications (2)

Publication Number Publication Date
CN105793328A CN105793328A (zh) 2016-07-20
CN105793328B true CN105793328B (zh) 2019-07-09

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CN201480066856.7A Expired - Fee Related CN105793328B (zh) 2013-12-11 2014-11-26 使包含氢硅烷的组合物聚合和随后将该聚合物用于制备含硅层的方法

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US (1) US10053599B2 (enExample)
EP (1) EP3080192B1 (enExample)
JP (1) JP6586420B2 (enExample)
CN (1) CN105793328B (enExample)
DE (1) DE102013020518A1 (enExample)
WO (1) WO2015085980A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015225289A1 (de) 2015-12-15 2017-06-22 Evonik Degussa Gmbh Dotierte Zusammensetzungen, Verfahren zu ihrer Herstellung und ihre Verwendung
KR102097646B1 (ko) * 2016-03-11 2020-04-06 가부시키가이샤 리코 비상 정지 압력 센서, 안전 장치 및 안전 시스템
WO2017223323A1 (en) * 2016-06-25 2017-12-28 Applied Materials, Inc. Flowable amorphous silicon films for gapfill applications
KR102271768B1 (ko) 2017-04-07 2021-06-30 어플라이드 머티어리얼스, 인코포레이티드 반응성 어닐링을 사용하는 갭충전
DE102017010263A1 (de) * 2017-11-07 2019-05-09 Forschungszentrum Jülich GmbH Verfahren zur Herstellung von hydrogenierten amorphen siliziumhaltigen Komposit-Kolloiden und zur Verkapselung von Substanzen mit hydrogenierten amorphen siliziumhaltigen Komposit-Schichten, sowie hydrogenierte amorphe siliziumhaltige Komposit-Kolloide und mit siliziumhaltigen Komposit-Schichten verkapselte Substanzen und deren Verwendung
WO2019217985A1 (en) * 2018-05-14 2019-11-21 The University Of Melbourne A method of generating radicals by ultrasound
US11401166B2 (en) 2018-10-11 2022-08-02 L'Air Liaquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Process for producing isomer enriched higher silanes
US11097953B2 (en) 2018-10-11 2021-08-24 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Process for producing liquid polysilanes and isomer enriched higher silanes
US11230474B2 (en) 2018-10-11 2022-01-25 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Process for producing isomer enriched higher silanes
US10752507B2 (en) 2018-10-11 2020-08-25 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Process for producing liquid polysilanes and isomer enriched higher silanes
DE102023118799A1 (de) * 2023-07-17 2025-01-23 Forschungszentrum Jülich GmbH Silizium Dünnschichten hergestellt durch CVD mittels Flüssigsilanen mit einstellbarem Kohlenstoffgehalt

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CN1297576A (zh) * 1999-03-30 2001-05-30 精工爱普生株式会社 硅膜的形成方法和喷墨用油墨组合物
CN102597318A (zh) * 2009-11-18 2012-07-18 赢创德固赛有限公司 用于产生硅层的方法
CN102762639A (zh) * 2010-02-26 2012-10-31 赢创德固赛有限公司 用于低聚氢化硅烷的方法、可以凭借该方法制得的低聚物及其用途
CN103118977A (zh) * 2010-10-01 2013-05-22 赢创德固赛有限公司 制备高级氢化硅烷化合物的方法

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JP2003313299A (ja) * 2002-04-22 2003-11-06 Seiko Epson Corp 高次シラン組成物及び該組成物を用いたシリコン膜の形成方法
JP2004165474A (ja) * 2002-11-14 2004-06-10 Matsushita Electric Ind Co Ltd 光電変換素子及びその製造方法
EP1599298A4 (en) * 2003-02-20 2007-05-02 Lam Res Corp METHOD AND DEVICE FOR MEGASCULAR CLEANING OF PATTERNED SUBSTRATES
DE102005027757A1 (de) * 2005-06-15 2006-12-28 Gesellschaft zur Förderung von Medizin-, Bio- und Umwelttechnologien e.V. Verfahren zur Herstellung von Polymeren
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CN1297576A (zh) * 1999-03-30 2001-05-30 精工爱普生株式会社 硅膜的形成方法和喷墨用油墨组合物
CN102597318A (zh) * 2009-11-18 2012-07-18 赢创德固赛有限公司 用于产生硅层的方法
CN102762639A (zh) * 2010-02-26 2012-10-31 赢创德固赛有限公司 用于低聚氢化硅烷的方法、可以凭借该方法制得的低聚物及其用途
CN103118977A (zh) * 2010-10-01 2013-05-22 赢创德固赛有限公司 制备高级氢化硅烷化合物的方法

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Publication number Publication date
JP6586420B2 (ja) 2019-10-02
WO2015085980A1 (de) 2015-06-18
EP3080192B1 (de) 2023-09-20
DE102013020518A1 (de) 2015-06-11
JP2017509138A (ja) 2017-03-30
US20160297997A1 (en) 2016-10-13
EP3080192A1 (de) 2016-10-19
US10053599B2 (en) 2018-08-21
CN105793328A (zh) 2016-07-20

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