CN105765748B - 具有高热电优值的纳米结构的硒化铜及其制备方法 - Google Patents

具有高热电优值的纳米结构的硒化铜及其制备方法 Download PDF

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CN105765748B
CN105765748B CN201480061558.9A CN201480061558A CN105765748B CN 105765748 B CN105765748 B CN 105765748B CN 201480061558 A CN201480061558 A CN 201480061558A CN 105765748 B CN105765748 B CN 105765748B
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copper selenide
nanostructured
nanostructured copper
thermoelectric
merit
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CN201480061558.9A
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CN105765748A (zh
Inventor
巴斯卡尔·加特力
西瓦艾尔·巴斯拉
克里提·特亚吉
阿瓦尼诗·库玛·斯里瓦斯塔瓦
阿加依·达尔
拉梅什·钱德拉·布汉尼
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Council of Scientific and Industrial Research CSIR
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Council of Scientific and Industrial Research CSIR
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/60—Compounds characterised by their crystallite size
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/74—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by peak-intensities or a ratio thereof only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Powder Metallurgy (AREA)
  • Compositions Of Oxide Ceramics (AREA)
CN201480061558.9A 2013-09-12 2014-03-12 具有高热电优值的纳米结构的硒化铜及其制备方法 Expired - Fee Related CN105765748B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IN2693/DEL/2013 2013-09-12
PCT/IN2014/000161 WO2015037014A1 (en) 2013-09-12 2014-03-12 Nanostructured copper-selenide with high thermoelectric figure-of-merit and process for the preparation thereof
IN2693DE2013 IN2013DE02693A (enExample) 2013-09-12 2014-03-12

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CN105765748A CN105765748A (zh) 2016-07-13
CN105765748B true CN105765748B (zh) 2018-07-24

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Country Link
US (1) US9865791B2 (enExample)
CN (1) CN105765748B (enExample)
IN (1) IN2013DE02693A (enExample)
WO (1) WO2015037014A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107793155B (zh) * 2016-09-07 2020-01-14 武汉理工大学 一种超快速制备Cu2Se块体热电材料的方法
CN106981565B (zh) * 2017-02-23 2019-05-10 深圳前海华兆新能源有限公司 高稳定性Cu2-xSe复合热电材料及其制备方法
CN109659356B (zh) * 2018-12-18 2021-08-27 河南师范大学 基于硒化铜单层的具有负微分电阻和开关作用的纳米器件
CN110444656B (zh) * 2019-08-20 2022-10-04 上海第二工业大学 一种硫化亚铜复合碳化硅块体热电材料的制备方法
CN110635018A (zh) * 2019-09-11 2019-12-31 大连理工大学 一种具有高硬度的ZrNiSn基Half-Heusler热电材料及其制备方法
CN110739387B (zh) * 2019-10-25 2023-05-16 陕西师范大学 一种Cu2Se薄膜材料的制备方法
CN113013315B (zh) * 2021-02-05 2023-04-18 西安交通大学 N型银硫属化合物热电材料的制备方法及其多孔块体
JP7649727B2 (ja) * 2021-10-12 2025-03-21 住友電気工業株式会社 熱電変換材料、熱電変換素子および熱電変換モジュール
CN115285948B (zh) * 2022-08-18 2024-07-16 曲阜师范大学 一种铜硒化合物热电材料及其制备方法
CN116329550A (zh) * 2023-03-09 2023-06-27 空间液态金属科技发展(江苏)有限公司 一种采用放电等离子烧结工艺制备液态金属导热片的方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060235087A1 (en) * 2004-06-18 2006-10-19 Paschalis Alexandridis Preparation of metallic nanoparticles
CN103165809A (zh) * 2013-03-19 2013-06-19 武汉理工大学 自蔓延高温快速一步合成具有纳米结构Cu2Se热电材料粉体的方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9713015D0 (en) * 1997-06-20 1997-08-27 Mead Corp Article carrier
US9306145B2 (en) * 2012-03-09 2016-04-05 The Trustees Of Boston College Methods of synthesizing thermoelectric materials
JP6249426B2 (ja) * 2013-09-09 2017-12-20 エルジー・ケム・リミテッド 熱電材料

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060235087A1 (en) * 2004-06-18 2006-10-19 Paschalis Alexandridis Preparation of metallic nanoparticles
CN103165809A (zh) * 2013-03-19 2013-06-19 武汉理工大学 自蔓延高温快速一步合成具有纳米结构Cu2Se热电材料粉体的方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
"Enhanced thermoelectric figure-of-merit in spark plasma sintered nanostructured n-type SiGe alloys";Sivaiah Bathula et al.;《Applied Physics Letters》;20121121;第101卷;第213902-1页第1栏倒数第10行-第213902-2页第2栏第14行 *
"Thermoelectric properties of copper selenide with ordered selenium layer and disordered copper layer";Bo Yu et al.;《NANO energy》;20120307;第1卷;第473页第1栏第29行-第476页第1栏第6行 *

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WO2015037014A1 (en) 2015-03-19
US20160225972A1 (en) 2016-08-04
US9865791B2 (en) 2018-01-09
IN2013DE02693A (enExample) 2015-07-10
CN105765748A (zh) 2016-07-13

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