IN2013DE02693A - - Google Patents

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Publication number
IN2013DE02693A
IN2013DE02693A IN2693DE2013A IN2013DE02693A IN 2013DE02693 A IN2013DE02693 A IN 2013DE02693A IN 2693DE2013 A IN2693DE2013 A IN 2693DE2013A IN 2013DE02693 A IN2013DE02693 A IN 2013DE02693A
Authority
IN
India
Prior art keywords
merit
thermoelectric
cu2se
ball milling
nanostructured
Prior art date
Application number
Other languages
English (en)
Inventor
Bhasker Gahtori
Sivaiah Bathula
Kriti Tyagi
Avanish Kumar Srivastava
Ajay Dhar
Ramesh Chandra Budhani
Original Assignee
Council Scient Ind Res
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Council Scient Ind Res filed Critical Council Scient Ind Res
Priority to US15/021,661 priority Critical patent/US9865791B2/en
Priority to CN201480061558.9A priority patent/CN105765748B/zh
Priority to IN2693DE2013 priority patent/IN2013DE02693A/en
Priority to PCT/IN2014/000161 priority patent/WO2015037014A1/en
Publication of IN2013DE02693A publication Critical patent/IN2013DE02693A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/60—Compounds characterised by their crystallite size
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/74—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by peak-intensities or a ratio thereof only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Powder Metallurgy (AREA)
  • Compositions Of Oxide Ceramics (AREA)
IN2693DE2013 2013-09-12 2014-03-12 IN2013DE02693A (enExample)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US15/021,661 US9865791B2 (en) 2013-09-12 2014-03-12 Nanostructured copper-selenide with high thermoelectric figure-of-merit and process for the preparation thereof
CN201480061558.9A CN105765748B (zh) 2013-09-12 2014-03-12 具有高热电优值的纳米结构的硒化铜及其制备方法
IN2693DE2013 IN2013DE02693A (enExample) 2013-09-12 2014-03-12
PCT/IN2014/000161 WO2015037014A1 (en) 2013-09-12 2014-03-12 Nanostructured copper-selenide with high thermoelectric figure-of-merit and process for the preparation thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IN2693DE2013 IN2013DE02693A (enExample) 2013-09-12 2014-03-12

Publications (1)

Publication Number Publication Date
IN2013DE02693A true IN2013DE02693A (enExample) 2015-07-10

Family

ID=50792487

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2693DE2013 IN2013DE02693A (enExample) 2013-09-12 2014-03-12

Country Status (4)

Country Link
US (1) US9865791B2 (enExample)
CN (1) CN105765748B (enExample)
IN (1) IN2013DE02693A (enExample)
WO (1) WO2015037014A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115050884A (zh) * 2019-09-11 2022-09-13 大连理工大学 一种ZrNiSn基Half-Heusler热电材料及其制备方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107793155B (zh) * 2016-09-07 2020-01-14 武汉理工大学 一种超快速制备Cu2Se块体热电材料的方法
CN106981565B (zh) * 2017-02-23 2019-05-10 深圳前海华兆新能源有限公司 高稳定性Cu2-xSe复合热电材料及其制备方法
CN109659356B (zh) * 2018-12-18 2021-08-27 河南师范大学 基于硒化铜单层的具有负微分电阻和开关作用的纳米器件
CN110444656B (zh) * 2019-08-20 2022-10-04 上海第二工业大学 一种硫化亚铜复合碳化硅块体热电材料的制备方法
CN110739387B (zh) * 2019-10-25 2023-05-16 陕西师范大学 一种Cu2Se薄膜材料的制备方法
CN113013315B (zh) * 2021-02-05 2023-04-18 西安交通大学 N型银硫属化合物热电材料的制备方法及其多孔块体
JP7649727B2 (ja) * 2021-10-12 2025-03-21 住友電気工業株式会社 熱電変換材料、熱電変換素子および熱電変換モジュール
CN115285948B (zh) * 2022-08-18 2024-07-16 曲阜师范大学 一种铜硒化合物热电材料及其制备方法
CN116329550A (zh) * 2023-03-09 2023-06-27 空间液态金属科技发展(江苏)有限公司 一种采用放电等离子烧结工艺制备液态金属导热片的方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9713015D0 (en) * 1997-06-20 1997-08-27 Mead Corp Article carrier
US7718094B2 (en) * 2004-06-18 2010-05-18 The Research Foundation Of State University Of New York Preparation of metallic nanoparticles
US9306145B2 (en) * 2012-03-09 2016-04-05 The Trustees Of Boston College Methods of synthesizing thermoelectric materials
CN103165809B (zh) * 2013-03-19 2015-09-30 武汉理工大学 自蔓延高温快速一步合成具有纳米结构Cu2Se热电材料粉体的方法
JP6249426B2 (ja) * 2013-09-09 2017-12-20 エルジー・ケム・リミテッド 熱電材料

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115050884A (zh) * 2019-09-11 2022-09-13 大连理工大学 一种ZrNiSn基Half-Heusler热电材料及其制备方法

Also Published As

Publication number Publication date
CN105765748A (zh) 2016-07-13
US9865791B2 (en) 2018-01-09
CN105765748B (zh) 2018-07-24
WO2015037014A1 (en) 2015-03-19
US20160225972A1 (en) 2016-08-04

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