CN109659356B - 基于硒化铜单层的具有负微分电阻和开关作用的纳米器件 - Google Patents
基于硒化铜单层的具有负微分电阻和开关作用的纳米器件 Download PDFInfo
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- 239000002356 single layer Substances 0.000 title claims abstract description 34
- IRPLSAGFWHCJIQ-UHFFFAOYSA-N selanylidenecopper Chemical compound [Se]=[Cu] IRPLSAGFWHCJIQ-UHFFFAOYSA-N 0.000 title claims abstract description 32
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 229910021389 graphene Inorganic materials 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- QMULOZLYOQCZOH-UHFFFAOYSA-N copper;selenium(2-) Chemical compound [Cu+2].[Se-2] QMULOZLYOQCZOH-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- -1 transition metal sulfides Chemical class 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 206010034962 Photopsia Diseases 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910000065 phosphene Inorganic materials 0.000 description 1
- 238000002186 photoelectron spectrum Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004613 tight binding model Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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Abstract
本发明公开了一种基于硒化铜单层的具有负微分电阻和开关作用的纳米器件,属于纳米尺度电子器件技术领域。本发明的技术方案要点为:一种基于硒化铜单层的具有负微分电阻和开关作用的纳米器件,该纳米器件由具有六角蜂窝状结构的硒化铜单层构成,通过设计在具有类石墨烯结构的六角蜂窝状硒化铜单层上分别沿着扶手椅型和锯齿型方向搭建四电极双电路系统,实现负微分电阻和开关作用。
Description
技术领域
本发明属于纳米尺度电子器件技术领域,具体涉及一种基于硒化铜单层的具有负微分电阻和开关作用的纳米器件。
背景技术
随着科技和微加工技术的快速发展,电子器件已朝着更小(即结构尺度更小)、更快(反应速度更快)和更冷(功耗低、发热少)的趋势发展,越来越接近于分子甚至原子尺度。纳米电子器件已引起世界范围内的广泛关注和极大研究兴趣。
自从石墨烯在2004年被成功制备之后,因其独特的力学、电子和输运特性,二维材料已引起当今科学界的极大研究热潮。包括诸如石墨烯、氮化硼(h-BN)、过渡金属硫化物、磷烯、MX烯、锡烯、锗烯、硅烯、硼烯等二维材料已被陆续制备出来。研究表明,诸多二维材料具有优异的光电性质,有望成为新一代的高性能纳米器件的关键材料。
最近,中科院物理所Lin和Du课题组(Gao L.et al.,Epitaxial Growth ofHoneycomb Monolayer CuSe with Dirac Nodal Line Fermions,Adv.Mater.,30,1707055(2018))在国际上首次成功制备出了和石墨烯结构相同的六角蜂窝状硒化铜(CuSe)单层。他们采用分子束外延法在Cu(111)衬底上制备出了单层结构的硒化铜,并采用扫描隧道显微镜、角分辨光电子能谱和第一性原理计算方法确认了其六角蜂窝状结构。这种类石墨烯状的硒化铜单层拥有2个受到镜面反射对称性保护的二维狄拉克节点线费米子,在纳米器件领域具有潜在的应用价值。
然而,对于这种具有六角蜂窝状结构的硒化铜单层的一些电学性质及其在纳米电子器件领域的应用还尚未有相关报道。
发明内容
本发明解决的技术问题是提供了一种基于硒化铜单层的具有负微分电阻和开关作用的纳米器件,通过设计在具有类石墨烯结构的六角蜂窝状硒化铜单层上分别沿着扶手椅型和锯齿型方向搭建四电极双电路系统,实现负微分电阻和开关作用。
本发明为解决上述技术问题采用如下技术方案,基于硒化铜单层的具有负微分电阻和开关作用的纳米器件,其特征在于:所述纳米器件由具有六角蜂窝状结构的硒化铜(CuSe)单层构成。
进一步优选,所述的硒化铜单层上根据原子排列位置在相互垂直的扶手椅型方向(a-CuSe)和锯齿型方向(z-CuSe)分别搭建电路组建四电极双电路系统,且在两个电路方向上能够自由切换档位,使其处于扶手椅型方向闭合回路或锯齿型方向闭合回路,当电路在扶手椅型方向构成闭合回路时,该纳米器件表现出负微分电阻作用,且当电压高于0.5伏特时,电路处于关闭状态;当电路切换到锯齿型方向构成闭合回路时,电路始终处于导通状态。
进一步优选,所述四电极双电路系统由扶手椅型方向左、右电极及锯齿型方向左、右电极构成,且在两个电路方向上能够自由切换,调整档位使其分别处于扶手椅方向闭合回路和锯齿型方向闭合回路进而实现纳米器件的负微分电阻和开关作用。
本发明设计了六角蜂窝状硒化铜单层的四电极双电路具有负微分电阻和开关作用的纳米器件,通过调整档位使扶手椅型方向或锯齿型方向电路处于闭合回路状态,进而实现负微分电阻器件和开关功能。本发明的纳米器件结构超薄;其长短、宽度尺寸可随意调节控制;并且负微分电阻开启电压低(0.5伏特),功耗较低;开关比大,性能优良。
附图说明
图1是四电极双电路硒化铜单层纳米器件的原子尺度示意图,其中,Da和Sa是在扶手椅型方向(即X轴向)电路上的源极和漏极两个电极导线,Dz和Sz是在锯齿型方向(即Y轴向)电路上的源极和漏极两个电极导线;
图2是扶手椅型方向电路和锯齿型方向电路的电流-电压曲线。
具体实施方式
以下通过实施例对本发明的上述内容做进一步详细说明,但不应该将此理解为本发明上述主题的范围仅限于以下的实施例,凡基于本发明上述内容实现的技术均属于本发明的范围。
实施例
本发明构造了具有类石墨烯结构的六角蜂窝状硒化铜单层具有负微分电阻和开关作用的纳米器件结构。通过使用Virtual NanoLab-Atomistix ToolKit工具,采用密度泛函结合非平衡格林函数技术对硒化铜单层纳米器件的电子输运性质进行了研究(M.Brandbyge,et al.,Density-functional method for nonequilibrium electrontransport[J].Phys.Rev.B,2002,65:165401.)。通过对其电流-电压性质的测量和分析,揭示了该硒化铜单层材料作为原子尺度纳米器件的潜在应用价值,并为进一步设计和实现具有优良性能的基于硒化铜单层的纳米尺度负微分电阻器件和纳米开关提供了相关理论依据和模型构造方案。
基于硒化铜单层的四电极双电路纳米器件由扶手椅型方向左、右电极以及锯齿型方向左、右电极构成,如图1所示。扶手椅型方向和锯齿型方向电路分别构成两个闭合回路,且两条电路相互正交,并能够自由切换。
此纳米器件的电学性质测量,负微分电阻和开关作用实现可按照如下步骤完成:
一、将纳米器件设定在扶手椅型方向构成闭合回路。通过扶手椅型方向电路的电流-电压关系通过以下Landauer–Büttiker方法测量得到
其结果如图2中的扶手椅型曲线(a-CuSe)所示。当电压达到0.4伏特阈值电压时,开始出现负微分电阻现象,当电压超过0.5伏特时,通过电路电流为0,此时电路相当于处于断开状态,即对应开关的“关”态。
二、当调整档位处于硒化铜单层纳米器件的锯齿型方向构成闭合回路,通过锯齿型方向电路的电流-电压曲线关系可通过以下方法测量得到
其结果如图2中的锯齿型曲线(z-CuSe)所示。可以发现,在锯齿型方向电路表现出技术特性,其电流-电压曲线成线性增长,此时电路处于导通状态,即对应开关的“开”态。
本发明设计的六角蜂窝状结构硒化铜单层纳米器件结构超薄,长宽尺寸可随意调节,负微分电阻阈值电压低,功耗低,性能优良的特点。可根据电路实际需要任意设计其尺寸大小。即如图1所示,该硒化铜单层纳米器件的厚度仅为1个原子层厚,在X方向和Y方向的长度可随意剪切调整。
以上描述了本发明的基本形状构造、技术方案、工作原理、主要特征及优点。本行业的技术人员应该了解。本发明凡符合上述硒化铜单层纳米器件结构均落入本发明保护范围内。
Claims (2)
1.基于硒化铜单层的具有负微分电阻和开关作用的纳米器件,其特征在于:所述纳米器件由具有六角蜂窝状结构的硒化铜单层构成,所述的硒化铜单层上根据原子排列位置在相互垂直的扶手椅型方向和锯齿型方向分别搭建电路组建四电极双电路系统,且在两个电路方向上能够自由切换档位,使其处于扶手椅型方向闭合回路或锯齿型方向闭合回路,当电路在扶手椅型方向构成闭合回路时,该纳米器件表现出负微分电阻作用,且当电压高于0.5伏特时,电路处于关闭状态;当电路切换到锯齿型方向构成闭合回路时,电路始终处于导通状态。
2.根据权利要求1所述的基于硒化铜单层的具有负微分电阻和开关作用的纳米器件,其特征在于:所述四电极双电路系统由扶手椅型方向左、右电极及锯齿型方向左、右电极构成,且在两个电路方向上能够自由切换,调整档位使其分别处于扶手椅方向闭合回路和锯齿型方向闭合回路进而实现纳米器件的负微分电阻和开关作用。
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