CN105745764B - 用于太阳能电池和其他半导体装置的钝化的方法、设备和系统 - Google Patents

用于太阳能电池和其他半导体装置的钝化的方法、设备和系统 Download PDF

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CN105745764B
CN105745764B CN201480062697.3A CN201480062697A CN105745764B CN 105745764 B CN105745764 B CN 105745764B CN 201480062697 A CN201480062697 A CN 201480062697A CN 105745764 B CN105745764 B CN 105745764B
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back side
substrate
rtwcg
semiconductor substrate
silicon
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CN105745764A (zh
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格雷戈里·C·奈特
霍里亚·M·福尔
玛丽亚·福尔
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Special Materials Research And Technology Co Ltd (matt Spike)
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Special Materials Research And Technology Co Ltd (matt Spike)
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868Passivation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)
CN201480062697.3A 2013-09-16 2014-09-16 用于太阳能电池和其他半导体装置的钝化的方法、设备和系统 Expired - Fee Related CN105745764B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361878331P 2013-09-16 2013-09-16
US61/878,331 2013-09-16
US201461929906P 2014-01-21 2014-01-21
US61/929,906 2014-01-21
PCT/US2014/055933 WO2015039128A2 (en) 2013-09-16 2014-09-16 Methods, apparatus, and systems for passivation of solar cells and other semiconductor devices

Publications (2)

Publication Number Publication Date
CN105745764A CN105745764A (zh) 2016-07-06
CN105745764B true CN105745764B (zh) 2018-08-14

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US (1) US10217893B2 (de)
EP (1) EP3047524B1 (de)
CN (1) CN105745764B (de)
WO (1) WO2015039128A2 (de)

Families Citing this family (8)

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Publication number Priority date Publication date Assignee Title
US10619097B2 (en) * 2014-06-30 2020-04-14 Specmat, Inc. Low-[HF] room temperature wet chemical growth (RTWCG) chemical formulation
CN105576074A (zh) * 2014-10-08 2016-05-11 上海神舟新能源发展有限公司 一种n型双面电池的湿法刻蚀方法
US9972513B2 (en) * 2016-03-07 2018-05-15 Shibaura Mechatronics Corporation Device and method for treating a substrate with hydrofluoric and nitric acid
JP6746187B2 (ja) * 2016-11-02 2020-08-26 株式会社カネカ 太陽電池の製造方法
JP7088487B2 (ja) * 2018-02-20 2022-06-21 日清紡メカトロニクス株式会社 太陽電池モジュールの寿命予測方法
CN109216473B (zh) 2018-07-20 2019-10-11 常州大学 一种晶硅太阳电池的表界面钝化层及其钝化方法
CN111129171B (zh) * 2019-12-31 2022-03-04 横店集团东磁股份有限公司 一种用于碱抛的掩盖膜及其制备方法
CN115117207B (zh) * 2021-03-22 2023-12-22 浙江爱旭太阳能科技有限公司 Hjt电池钝化方法、hjt电池及其组件

Citations (11)

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US6391145B1 (en) * 1997-04-23 2002-05-21 Mitsubishi Denki Kabushiki Kaisha Solar cell, a method of producing the same and a semiconductor producing apparatus
CN101431113A (zh) * 2008-11-24 2009-05-13 常州天合光能有限公司 背部钝化的高效太阳电池结构及其生产工艺
CN101447528A (zh) * 2008-12-22 2009-06-03 上海晶澳太阳能光伏科技有限公司 一种双面钝化和激光打点制备背点接触晶体硅太阳电池的方法
CN101540350A (zh) * 2009-04-30 2009-09-23 中山大学 一种背面点接触晶体硅太阳电池的制备工艺
US7759258B2 (en) * 2004-12-31 2010-07-20 Industrial Technology Research Institute Method for making solar cell
CN102364692A (zh) * 2011-06-30 2012-02-29 常州天合光能有限公司 双面受光的全钝化结构晶体硅太阳能电池及其制作方法
CN202308019U (zh) * 2011-11-10 2012-07-04 常州华盛恒能光电有限公司 太阳能电池片去除磷硅玻璃装置
CN102610686A (zh) * 2012-03-28 2012-07-25 星尚光伏科技(苏州)有限公司 一种背接触晶体硅太阳能电池及其制作工艺
CN102656704A (zh) * 2009-05-01 2012-09-05 卡利太阳能有限公司 具有覆盖的后网格表面的双面太阳能电池
TW201251057A (en) * 2011-03-11 2012-12-16 Special Materials Res And Technology Inc Method, process and fabrication technology for high-efficiency low-cost crystalline silicon solar cells
CN103022262A (zh) * 2013-01-06 2013-04-03 奥特斯维能源(太仓)有限公司 一种背面点接触太阳能电池的制备方法

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US20070169806A1 (en) 2006-01-20 2007-07-26 Palo Alto Research Center Incorporated Solar cell production using non-contact patterning and direct-write metallization
US20110132444A1 (en) * 2010-01-08 2011-06-09 Meier Daniel L Solar cell including sputtered reflective layer and method of manufacture thereof
AU2011302575A1 (en) * 2010-09-16 2013-05-02 Specmat, Inc. Method, process and fabrication technology for high-efficency low-cost crytalline silicon solar cells

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6391145B1 (en) * 1997-04-23 2002-05-21 Mitsubishi Denki Kabushiki Kaisha Solar cell, a method of producing the same and a semiconductor producing apparatus
US7759258B2 (en) * 2004-12-31 2010-07-20 Industrial Technology Research Institute Method for making solar cell
CN101431113A (zh) * 2008-11-24 2009-05-13 常州天合光能有限公司 背部钝化的高效太阳电池结构及其生产工艺
CN101447528A (zh) * 2008-12-22 2009-06-03 上海晶澳太阳能光伏科技有限公司 一种双面钝化和激光打点制备背点接触晶体硅太阳电池的方法
CN101540350A (zh) * 2009-04-30 2009-09-23 中山大学 一种背面点接触晶体硅太阳电池的制备工艺
CN102656704A (zh) * 2009-05-01 2012-09-05 卡利太阳能有限公司 具有覆盖的后网格表面的双面太阳能电池
TW201251057A (en) * 2011-03-11 2012-12-16 Special Materials Res And Technology Inc Method, process and fabrication technology for high-efficiency low-cost crystalline silicon solar cells
CN102364692A (zh) * 2011-06-30 2012-02-29 常州天合光能有限公司 双面受光的全钝化结构晶体硅太阳能电池及其制作方法
CN202308019U (zh) * 2011-11-10 2012-07-04 常州华盛恒能光电有限公司 太阳能电池片去除磷硅玻璃装置
CN102610686A (zh) * 2012-03-28 2012-07-25 星尚光伏科技(苏州)有限公司 一种背接触晶体硅太阳能电池及其制作工艺
CN103022262A (zh) * 2013-01-06 2013-04-03 奥特斯维能源(太仓)有限公司 一种背面点接触太阳能电池的制备方法

Also Published As

Publication number Publication date
WO2015039128A3 (en) 2015-11-12
EP3047524B1 (de) 2020-11-04
WO2015039128A2 (en) 2015-03-19
CN105745764A (zh) 2016-07-06
EP3047524A2 (de) 2016-07-27
US10217893B2 (en) 2019-02-26
US20160233374A1 (en) 2016-08-11
EP3047524A4 (de) 2017-05-31

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