CN105679861B - 一种表面等离子增强的二维材料/半导体异质结太阳能电池及其制备方法 - Google Patents
一种表面等离子增强的二维材料/半导体异质结太阳能电池及其制备方法 Download PDFInfo
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Abstract
本发明公开了一种表面等离子增强的二维材料/半导体异质结太阳能电池，该太阳能电池自下而上依次有背面电极、半导体衬底、二维材料和金属量子点层，在二维材料层上还设有正面电极，在半导体衬底与二维材料层之间设有电极绝缘层。其制备方法如下：首先在半导体衬底一面制作背面电极，之后在另一面制作电极绝缘层，然后将二维材料转移至半导体衬底上，再在二维材料上制作金属量子点层以及正面电极。本发明的表面等离子增强的二维材料/半导体异质结太阳能电池利用表面等离子共振提高二维材料/半导体异质结太阳能电池的转化效率，工艺简单，便于推广。
Description
技术领域
本发明涉及一种太阳能电池及其制造方法，尤其涉及一种表面等离子增强的二维材料/半导体异质结太阳能电池及其制备方法，属于新型太阳能电池技术领域。
背景技术
太阳能电池作为一种新型绿色能源，是人类的可持续发展最重要的可再生能源。目前，晶体硅太阳能电池占据市场～90％的份额。但与常规发电相比，太阳电池发电成本仍然较高，限制了其广泛应用。太阳电池发电成本较高的原因之一是电池制造成本较高及光电转化效率较低。
自石墨烯材料发现以来，其在电学、光学、磁学以及力学方面表现出的优异性质如极高的载流子迁移率、高透光新、高的杨氏模量等引发了石墨烯在诸多领域应用的憧憬。其中石墨烯在太阳能电池领域的应用研究为石墨烯在能源领域的应用打开了大门。目前，已有研究者利用电场调控在石墨烯/砷化镓异质结太阳能电池取得18.5％的转化效率，已经与目前商用硅太阳能电池相当，预示着未来商业化的前景。在石墨烯材料开启了二维材料的大门以后，二维半导体材料比如二硫化钼、二硫化钨、二硒化钨、黑磷、二维碳化硅等大大拓展了二维材料体系。二维材料/半导体异质结的一个重要特点就是结区基本位于器件表面，因此通过前表面的设计可以有效的提高二维材料/半导体异质结太阳能电池的转化效率。
发明内容
本发明的目的在于提供一种表面等离子增强的二维材料/半导体异质结太阳能电池及其制备方法。
本发明的表面等离子增强的二维材料/半导体异质结太阳能电池，自下而上依次有背面电极、半导体层、二维材料层和金属量子点层，在二维材料层上还设有正面电极，在半导体层与二维材料层之间位于正面电极正下方设有电极绝缘层。
上述技术方案中，所述的半导体层为n型或p型掺杂的半导体材料。所述的二维材料层为石墨烯、二硫化钼、二硫化钨、二硒化钨、黑磷或二维碳化硅，所述的二维材料层的厚度为0.4-500nm。
所述的电极绝缘层是氧化硅、氮化硅、氮氧化硅、碳化硅、氧化铝、非晶硅、氮化铝、氟化镁、氧化钛、氧化锆或者高分子绝缘层，厚度2纳米至200微米。
所述的金属量子点层为金、银、铝、镍，量子点尺寸为5纳米至200纳米。
所述的背面电极是金、钯、银、钛、铬、镍、ITO、FTO、AZO的一种或者几种的复合电极。
所述的正面电极是金、钯、银、钛、铜、铂、铬、镍、ITO、FTO、AZO的一种或者几种的复合电极。
制造上述表面等离子增强的二维材料/半导体异质结太阳能电池的方法，包括如下步骤：
1)在洁净的半导体衬底一面制作背面电极；
2)在上述半导体衬底另一面利用模板法或者光刻工艺制作电极绝缘层；
3)通过柔性高分子材料作为支撑层将二维材料转移至步骤2)所得的半导体衬底具有电极绝缘层的一面上，使得二维材料覆盖在电极绝缘层上；
4)在二维材料上位于电极绝缘层上方的区域制作正面电极；
5)在二维材料上制作金属量子点层。
本发明的根据二维材料/半导体异质结位于器件表面的特征，利用表面等离子增强直接作用于异质结结区，相比较于传统pn结结区处于相对较深的位置，本发明提出的表面等离子共振可以有效提高二维材料/半导体异质结太阳能电池的转化效率，效果显著，工艺简单，便于推广。
附图说明
图1为表面等离子增强的二维材料/半导体异质结太阳能电池的结构示意图；
图2为表面等离子增强效应对太阳能电池电流密度-电压曲线的影响。
具体实施方式
下面结合附图和具体实施例对本发明做进一步说明。
参照图1，本发明的表面等离子增强的二维材料/半导体异质结太阳能电池，其特征在于自下而上依次有背面电极1、半导体层2、二维材料层4、金属量子点层5，在二维材料层上还设有正面电极6，在半导体层与二维材料层间位于正面电极下方设有电极绝缘层3。
实施例1：
1)在n型砷化镓背面利用热蒸发沉积铬金复合电极；
2)在砷化镓衬底另一面利用电子束蒸发以及掩膜法沉积100纳米厚的氧化铝电极绝缘层；
3)将0.4纳米厚的石墨烯利用PMMA作为支撑层转移到砷化镓衬底有电极绝缘层的一面并使部分石墨烯覆盖在氧化铝电极绝缘层上；
4)在电极绝缘层范围内的石墨烯上直接涂银浆并烘干作为正面电极；
5)在石墨烯上旋涂80纳米粒径的金量子点溶液得到表面等离子增强的石墨烯/砷化镓异质结太阳能电池。
得到的表面等离子增强的石墨烯/砷化镓异质结太阳能电池，光照情况下在表面的金颗粒表面产生局域场增强，这种场增强渗透到石墨烯/半导体结区，提高光在太阳能电池中的吸收和收集，提高光电转换效率，如附图2所示。
实施例2：
1)在n型硅背面利用热蒸发沉积钛银复合电极；
2)在硅衬底另一面利用等离子增强化学气相沉积以及掩膜法沉积200微米厚的氮化硅电极绝缘层；
3)将500纳米厚的二硫化钼利用PMMA作为支撑层转移到硅衬底有电极绝缘层的一面并使部分二硫化钼覆盖在氮化硅电极绝缘层上；
4)在电极绝缘层范围内的二硫化钼上利用磁控溅射沉积镍作为正面电极；
5)在石墨烯上旋涂200纳米粒径的银量子点溶液得到表面等离子增强的二硫化钼/硅异质结太阳能电池。
实施例3：
1)在p型磷化铟背面利用热蒸发沉积铜铂复合电极；
2)在磷化铟衬底另一面利用原子层沉积以及掩膜法沉积2纳米厚的氧化钛电极绝缘层；
3)将20纳米厚的二硫化钨利用PMMA作为支撑层转移到磷化铟衬底有电极绝缘层的一面并使部分二硫化钨覆盖在氧化铝电极绝缘层上；
4)在电极绝缘层范围内的二硫化钨上打印银浆并烘干作为正面电极；
5)在石墨烯上旋涂5纳米粒径的铝量子点溶液得到表面等离子增强的二硫化钨/磷化铟异质结太阳能电池。
实施例4：
1)在n型锗背面利用热蒸发沉积铬金复合电极；
2)在锗衬底另一面掩膜法旋涂得到500纳米厚的PI电极绝缘层；
3)将5纳米厚的二硒化钨利用PMMA作为支撑层转移到锗衬底有电极绝缘层的一面并使部分二硒化钨覆盖在PI电极绝缘层上；
4)在电极绝缘层范围内的二硒化钨上磁控溅射AZO作为正面电极；
5)在二硒化钨上热蒸发沉积10纳米厚的超薄镍层并在400摄氏度退火30分钟得到表面等离子增强的二硒化钨/锗异质结太阳能电池。
Claims (6)
1.一种表面等离子增强的二维材料/半导体异质结太阳能电池，其特征在于，自下而上依次有背面电极（1）、半导体层（2）、二维材料层（4）和金属量子点层（5），在二维材料层（4）上还设有正面电极（6），在半导体层与二维材料层之间位于正面电极（6）正下方设有电极绝缘层（3）；所述的二维材料层（4）为二硫化钼、二硫化钨、二硒化钨、黑磷或二维碳化硅，所述的二维材料层的厚度为0.4纳米至500纳米，所述的金属量子点层（5）为银、铝、镍，量子点尺寸为5纳米至200纳米。
2.根据权利要求1所述的表面等离子增强的二维材料/半导体异质结太阳能电池，其特征在于，所述的半导体层（2）为n型或p型掺杂的半导体材料。
3.根据权利要求1所述的表面等离子增强的二维材料/半导体异质结太阳能电池，其特征在于，所述的电极绝缘层是氧化硅、氮化硅、氮氧化硅、碳化硅、氧化铝、非晶硅、氮化铝、氟化镁、氧化钛、氧化锆或者高分子绝缘层，厚度2纳米至200微米。
4.根据权利要求1所述的表面等离子增强的二维材料/半导体异质结太阳能电池，其特征在于，所述的背面电极是金、钯、银、钛、铬、镍、ITO、FTO、AZO的一种或者几种的复合电极。
5.根据权利要求1所述的表面等离子增强的二维材料/半导体异质结太阳能电池，其特征在于，所述的正面电极是金、钯、银、钛、铜、铂、铬、镍、ITO、FTO、AZO的一种或者几种的复合电极。
6.制造如权利要求1-5任一项所述的表面等离子增强的二维材料/半导体异质结太阳能电池的方法，其特征在于该方法包括如下步骤：
1）在洁净的半导体衬底一面制作背面电极；
2）在上述半导体衬底另一面利用模板法或者光刻工艺制作电极绝缘层；
3）通过柔性高分子材料作为支撑层将二维材料转移至步骤2）所得的半导体衬底具有电极绝缘层的一面上，使得二维材料覆盖在电极绝缘层上；
4）在二维材料上位于电极绝缘层上方制作正面电极；
5）在二维材料上制作金属量子点层。
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