CN111755534B - 一种石墨烯/半导体内建电场调控的pn结太阳能电池及其制备方法 - Google Patents
一种石墨烯/半导体内建电场调控的pn结太阳能电池及其制备方法 Download PDFInfo
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Abstract
本发明公开了一种石墨烯/半导体内建电场调控的PN结太阳能电池及其制备方法，该太阳能电池自下而上依次包括：背面电极、半导体PN结衬底、石墨烯、正面电极和外部电场调控层，所述外部电场调控层与石墨烯接触。本发明的太阳能电池利用石墨烯/半导体异质结具有强内建电场的特点，利用此强内建电场加速PN结中的光生载流子分离，减少载流子在半导体PN结界面处的复合从而显著提高太阳能电池的光电转换效率。且器件在制作完成之后依然可以通过外部电场调控进行性能调节。本发明的石墨烯/半导体异质内建电场调控的PN结太阳能电池具有性能可调、转化效率高、工艺简单、便于推广的特点。
Description
技术领域
本发明涉及一种太阳能电池及其制造方法，尤其涉及一种石墨烯/半导体内建电场调控的半导体PN结太阳能电池及其制备方法，属于新型太阳能电池技术领域。
背景技术
目前，传统半导体PN结太阳能电池的效率需要提升来应对当今社会日益突出的能源需求，这样的提升需要新的物理内涵，比如减少半导体PN器件界面的载流子复合，提升热电子的输出效率，从而有效利用光生载流子的能量，提升太阳能电池的短路电流和开路电压，提升太阳能电池的效率。
石墨烯作为二维材料的代表，是少原子层导电晶体，自从2004年发现以来已经广泛应用于光电能源领域。在新型石墨烯太阳能电池中，将石墨烯与半导体结合形成石墨烯/半导体异质器件具有很强的内建电场，这样的内建电场可以用来加速流经此内建电场的多数载流子，从而提升半导体内光生载流子的利用效率。且单层石墨烯只吸收2.3％的入射光，这样在不损失入射光转换为半导体光生载流子的前提下，能够有效利用半导体内产生的光生载流子，从而获得高的转换效率。
发明内容
本发明的目的在于针对现有技术的不足，提供一种石墨烯/半导体内建电场调控的PN结太阳能电池及其制备方法。
本发明的石墨烯/半导体内建电场调控的半导体PN结太阳能电池，自下而上依次有背面电极、半导体PN结衬底层、石墨烯层、正面电极和外部电场调控层，所述的外部电场调控层与石墨烯层相接触。
上述技术方案中，所述的半导体PN结衬底层包括依次叠置的P型半导体、N型半导体、缓冲层和衬底层，其中半导体、缓冲层和衬底层可以为GaAs、Si、GaN、Ge、SiC、InGaAs、AlGaAs、AlGaN、GaInP、CdTe、InGaN等材料。
进一步的，所述的外部电场调控层是利用半导体量子点、外加栅压电场或极化材料形成静电场，量子点可以选用PbS、CdS等量子点，极化材料可以是PVDF、PE、PVC、PTFE等。
进一步的，所述的石墨烯层的厚度为0.4纳米至10纳米。
进一步的，所述的背面电极是金、钯、银、钛、铬、镍、ITO、FTO、AZO的一种或者几种的复合电极。
进一步的，所述的正面电极是金、钯、银、钛、铜、铂、铬、镍、ITO、FTO、AZO的一种或者几种的复合电极。
制造上述石墨烯/半导体内建电场调控的半导体PN结太阳能电池的方法，包括如下步骤：
1)在半导体PN结衬底层的背面制作背面电极；
2)在步骤1)所得的半导体PN结衬底层的正面上转移石墨烯，使得石墨烯覆盖在半导体PN结衬底层上形成石墨烯/半导体异质结；
3)在石墨烯上制作正面电极和外部电场调控层；
4)利用外部电场调控层对步骤3)所得的器件进行调节。
本发明的石墨烯/半导体内建电场调控的半导体PN结太阳能电池利用石墨烯与半导体PN结结合形成石墨烯/半导体异质结从而形成强内建电场，利用此强内建电场加速流经此内建电场的多数载流子，提升半导体PN结分离光生载流子的能力，减少载流子在半导体界面处的复合从而显著提高太阳能电池的光电转换效率。同时，由于外部电场调控层的加入，使得器件在制作完成之后依然可以通过外部电场调控进行性能调节，石墨烯/半导体异质结的加入也可以形成更高的开路电压。本发明的石墨烯外部电场调控的PN结太阳能电池具有性能可调、转化效率高、工艺简单、便于推广的特点。
附图说明
图1为本发明石墨烯/半导体内建电场调控的半导体PN结太阳能电池的结构示意图；
图2为极化聚偏氟乙烯(PVDF)薄膜电场调制的石墨烯/GaAs PN结太阳能电池的结构示意图；
图3为极化PVDF薄膜电场调制的石墨烯/GaAs PN结的J-V曲线图，其中黑色代表无光照情况下器件的J-V曲线；蓝色代表标准光照下无PVDF器件的J-V曲线；红色代表标准光照下有PVDF器件的J-V曲线。
具体实施方式
下面结合附图和具体实施例对本发明做进一步说明。
参照图1，本发明的石墨烯/半导体内建电场调控的半导体PN结太阳能电池，自下而上依次有背面电极1、半导体PN结衬底层2、石墨烯层3、正面电极4和外部电场调控层5，外部电场调控层5与石墨烯层直接接触。
实施例1：
1)首先在GaAs PN结衬底层的一面制作背面电极——Au电极；
2)在1)的基础上转移少层石墨烯，并制备正面Ag电极；
3)在2)得到的石墨烯/GaAs PN结器件上转移极化PVDF薄膜，得到极化PVDF薄膜电场调制的石墨烯/GaAs PN结太阳能电池。
参照图2，GaAs PN结衬底层包括依次叠置的P型GaAs、N型GaAs、N型GaInP、GaAs缓冲层和GaAs衬底层；本发明的基于石墨烯/半导体电场调控的GaAs PN结太阳能电池，由于石墨烯/GaAs异质结的内建电场高达0.5MV/cm，通过PVDF对石墨烯/GaAs异质界面施加外部电场，提升GaAs的PN结中分离光生载流子的能力，加速GaAs PN结之间载流子渡越，减少载流子在半导体界面处的复合，从而显著提高太阳能电池的光电转换效率。由于外部电场调控层的加入，使得器件在制作完成之后依然可以通过外部电场调控进行性能调节，石墨烯/GaAs异质结的加入也可以形成更高的开路电压。如图3所示，添加PVDF的器件拥有更高的短路电流与开路电压，光电转换效率更高。
本发明阐述的电场调制的石墨烯/GaAs PN结太阳能电池具有可调节、转化效率高、工艺简单、便于推广的特点。
实施例2：
1)首先在硅PN结衬底的一面制作背面电极——Au电极；
2)在1)的基础上转移少层石墨烯，并制备正面Ag电极；
3)在2)得到的石墨烯/硅PN结器件上施加栅压调节，得到外部栅压电场调制的石墨烯/硅PN结太阳能电池。
实施例3：
1)首先在氮化镓PN结衬底的一面制作背面电极——Ag电极；
2)在1)的基础上转移少层石墨烯，并制备正面Ag电极；
3)在2)得到的石墨烯/氮化镓PN结器件上旋涂半导体PbS量子点，得到半导体量子点调制的石墨烯/氮化镓PN结太阳电池。
实施例4：
1)首先在AlGaAs PN结衬底的一面制作背面电极——Au电极；
2)在1)的基础上转移少层石墨烯，并制备正面Au电极；
3)在2)得到的石墨烯/AlGaAs PN结器件上转移极化PE薄膜，得到极化PE薄膜电场调制的石墨烯/AlGaAs PN结太阳能电池。
Claims (6)
1.一种石墨烯/半导体内建电场调控的半导体PN结太阳能电池，其特征在于，自下而上依次有背面电极（1）、半导体PN结衬底层（2）、石墨烯层（3）、正面电极（4）和外部电场调控层（5），所述的外部电场调控层（5）与石墨烯层（3）相接触；所述的外部电场调控层（5）是利用外加量子点、栅压电场或极化材料形成静电场，提升半导体PN结分离光生载流子的能力，量子点选用PbS、CdS量子点，极化材料选自PVDF、PE、PVC、PTFE。
2.根据权利要求1所述的石墨烯/半导体内建电场调控的半导体PN结太阳能电池，其特征在于，所述的半导体PN结衬底层（2）包括依次叠置的P型半导体、N型半导体、缓冲层和衬底层，其中半导体、缓冲层和衬底层选自GaAs、Si、GaN、Ge、SiC、InGaAs、AlGaAs、AlGaN、GaInP、CdTe、InGaN材料。
3.根据权利要求1所述的石墨烯/半导体内建电场调控的半导体PN结太阳能电池，其特征在于，所述的背面电极（1）是金、钯、银、钛、铬、镍、ITO、FTO、AZO的一种或者几种的复合电极。
4.根据权利要求1所述的石墨烯/半导体内建电场调控的半导体PN结太阳能电池，其特征在于，所述的正面电极（4）是金、钯、银、钛、铜、铂、铬、镍、ITO、FTO、AZO的一种或者几种的复合电极。
5.根据权利要求1所述的石墨烯/半导体内建电场调控的半导体PN结太阳能电池，其特征在于，所述的石墨烯层（3）的厚度为0.4纳米至10纳米。
6.制造如权利要求1-5任一项所述的石墨烯/半导体内建电场调控的半导体PN结太阳能电池的方法，其特征在于，该方法包括如下步骤：
1）在半导体PN结衬底层的背面制作背面电极；
2）在步骤1）所得的半导体PN结衬底层的正面上转移石墨烯，使得石墨烯覆盖在半导体PN结衬底层上形成石墨烯/半导体异质结；
3）在石墨烯上制作正面电极及外部电场调控层；
4）利用外部电场调控层对步骤3）所得的器件进行调节。
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