CN104576787A - 一种电场调控的石墨烯/砷化镓太阳电池及其制备方法 - Google Patents
一种电场调控的石墨烯/砷化镓太阳电池及其制备方法 Download PDFInfo
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Abstract
本发明涉及一种电场调控的石墨烯/砷化镓太阳电池及其制备方法，该石墨烯/砷化镓太阳电池自下而上依次有背面电极、砷化镓层、石墨烯层、绝缘介质层和栅极，该太阳电池还设有正面电极，所述正面电极设置在石墨烯层上。其制备方法如下：先在砷化镓片一面制作背面电极；清洗后将石墨烯转移至砷化镓片另一面上；在石墨烯上制作正面电极；再在石墨烯上制作绝缘介质层；最后在绝缘介质层上制作栅极，获得太阳电池。本发明的电场调控的石墨烯/砷化镓太阳电池可以通过外加电场调控石墨烯的掺杂状态，进而可以进一步提高石墨烯/砷化镓太阳电池的光电转化效率。
Description
技术领域
本发明涉及一种太阳电池及其制造方法，尤其是一种电场调控的石墨烯/砷化镓太阳电池及其制备方法，属于太阳电池技术领域。
背景技术
太阳电池作为一种可再生绿色能源正在人类的可持续发展中起到非常关键的作用。光伏发电发展较早的德国已经有超过50%的发电来自于光伏发电，中国在2013年的光伏新增安装容量也达到12GW，于2012年相比增幅超过200%。在所有光伏发电技术中，硅基太阳电池，特别是晶体硅太阳电池占据市场约90%的份额。硅材料的提纯、硅太阳电池较复杂的工艺以及由此带来的环境污染问题也同时引起了广泛的关注。另一方面，硅电池技术在经历了60多年的发展后，发电效率的提升已经遇到瓶颈。硅材料禁带宽度较窄，同时是间接禁带，不是最理想的基础材料。砷化镓具有较合适的禁带宽度，也是直接带隙材料，同时还具有比硅更高的载流子迁移率，因此，空间高效率太阳电池一般采用砷化镓材料制造。但传统砷化镓太阳电池的制造成本较高，限制了其大范围应用。
自从石墨烯材料在2004年首次被发现，越来越多的研究发现石墨烯材料具有优异的电学、光学性质，如极高的载流子迁移率、高透光新、高的杨氏模量等。这些独特的性质使石墨烯可以广泛的应用于光伏发电领域。最近几年的研究发现，石墨烯/半导体异质结结构是一种理想的太阳电池结构，但目前得到的光电转化效率还明显低于市场主流硅太阳电池效率，其中重要的一个限制因素就是石墨烯的掺杂。石墨烯可以通过化学方法来进行掺杂，但稳定性较差。另外，石墨烯的掺杂特性可以通过外加电场来控制，因此，本发明提出了电场调控的石墨烯/砷化镓太阳电池结构，并利用简单工艺实现了所述太阳电池的制备，并获得了较目前石墨烯太阳电池最高效率更好的光电转化性能。
发明内容
本发明的目的在于提供一种光电转化效率高，制备工艺简单的电场调控的石墨烯/砷化镓太阳电池及其制备方法。
本发明的电场调控的石墨烯/砷化镓太阳电池，自下而上依次有背面电极、n型掺杂或p型掺杂的砷化镓层、石墨烯层、绝缘介质层和栅极，所述的太阳电池还设有正面电极，正面电极设置在石墨烯层上。
所述的石墨烯层中石墨烯通常为1-10层，
所述的绝缘介质层可以为Al2O3、SiO2、SiNx、TiO2、SiC、SiON、HfO2、AlN、BN、聚二甲基硅氧烷（PDMS）、聚甲基丙烯酸甲酯（PMMA）、聚对苯二甲酸乙二醇酯（PET）、聚碳酸酯（PC）和聚苯乙烯（PS）中的一种或几种的叠层，厚度通常为0.4nm-100μm。
所述的栅极通常为金、钯、银、钛、铬、镍、石墨烯、AZO、ITO和FTO中的一种或者几种的复合电极。
所述的背面电极可以为金、钯、银、钛、铬、镍、AZO、ITO和FTO中的一种或者几种的复合电极。
所述的正面电极可以为金、钯、银、钛、铜、铂、铬、镍、ITO、FTO和AZO中的一种或者几种的复合电极。
制备上述的电场调控的石墨烯/砷化镓太阳电池的方法，包括如下步骤：
1）在洁净的n型掺杂或p型掺杂的砷化镓片的一面制作背面电极；
2）将步骤1）所得砷化镓片在化学溶液中浸泡5s~30m进行表面清洗，取出并干燥；
3）将石墨烯转移至步骤2）所得砷化镓片的另一面上；
4）在石墨烯层上制作正面电极，并在石墨烯层表面预留生长绝缘介质层的面积；
5）在石墨烯层上制作绝缘介质层；
6）在绝缘介质层上制作栅极。
上述技术方案中，步骤2）所述的化学溶液可以为HCl、HNO3、H2SO4、KOH或NaOH的水溶液。
本发明与现有技术相比具有的有益效果是：
本发明制备的太阳电池可通过电场调控对石墨烯的掺杂特性进行控制，从而调控太阳电池的性能，可获得转化效率更高的石墨烯/砷化镓太阳电池，且本发明的方法工艺简单，便于推广。
附图说明：
图1为石墨烯/砷化镓太阳电池的结构示意图；
图2为调控电场对石墨烯/砷化镓太阳电池的电池效率的影响。
具体实施方式
以下结合附图对本发明做进一步说明。
参照图1，本发明的石墨烯/砷化镓太阳电池自下而上依次有背面电极1、n型掺杂或p型掺杂的砷化镓层2、石墨烯层3、绝缘介质层5和栅极6，所述的太阳电池还设有正面电极4，正面电极4设置在石墨烯层3上。
实施例1：
1）在n型砷化镓片一面利用电子束蒸发法沉积铬、镍、金复合电极；
2）将得到的样品浸入质量浓度10%的NaOH水溶液中进行表面清洗，30min后取出并干燥；
3）将单层石墨烯转移至2）处理后的砷化镓片的另一面上；
4）在石墨烯层上利用热蒸发工艺沉积银电极，并预留生长绝缘介质层的面积；
5）在石墨烯层上银电极之间预留的面积上通过磁控溅射沉积HfO2薄膜，厚度为5nm；
6）在HfO2薄膜上沉积20nm的金作为栅极。
得到的调控电场对石墨烯/砷化镓太阳电池的归一化转化效率的影响如图2所示，可以看出，随着负偏压的增加，电池转化效率增加，而正偏压会降低电池转化效率。
实施例2：
1）在p型砷化镓片一面利用电子束蒸发法沉积钛、钯、银复合电极；
2）将得到的样品浸入质量浓度10%的HCl水溶液中进行表面清洗，5s后取出并干燥；
3）将双层石墨烯转移至2）处理后的砷化镓片的另一面上；
4）在石墨烯层上利用磁控溅射工艺沉积ITO电极，并预留生长绝缘介质层的面积；
5）在石墨烯层上ITO电极之间的预留面积上通过磁控溅射沉积TiO2薄膜，厚度为0.4nm；
6）在TiO2薄膜上沉积10nm的AZO作为栅极。
实施例3：
1）在p型砷化镓片一面利用磁控溅射沉积ITO电极；
2）将得到的样品浸入质量浓度20%的HNO3水溶液中进行表面清洗5min后取出并干燥；
3）将10层石墨烯转移至2）处理后的砷化镓片的另一面上；
4）在石墨烯层上蒸镀金、钯复合电极，并预留生长绝缘介质层的面积；
5）在石墨烯层预留面积上通过化学气相沉积工艺制备SiNx薄膜，厚度为100nm；
6）在SiNx薄膜上沉积80nm的FTO作为栅极。
实施例4
1）在n型砷化镓片一面利用热蒸发法沉积铬、金复合电极；
2）将得到的样品浸入质量浓度20%的KOH水溶液中进行表面清洗，30m后取出并干燥；
3）将5层石墨烯转移至2）处理的砷化镓片的另一面上；
4）在石墨烯层上蒸镀铂、铬、镍复合电极，并预留生长绝缘介质层的面积；
5）在石墨烯层上预留面积处通过化学气相沉积工艺制备10nm厚度SiC和50nm厚度SiO2叠层薄膜；
6）在SiO2薄膜上沉积100nm的ITO作为栅极。
实施例5
1）在n型砷化镓片一面利用磁控溅射沉积AZO电极；
2）将得到的样品浸入质量浓度20%的H2SO4水溶液中进行表面清洗，10min后取出并干燥；
3）将8层石墨烯转移至2）处理后的砷化镓片的另一面上；
4）在石墨烯层上溅射FTO电极，并预留生长绝缘介质层的面积；
5）在石墨烯层上预留面积处通过旋涂工艺制备100μm厚的PDMS、PMMA、PET、PC、PS复合薄膜；
6）在复合薄膜上沉积100nm的钛、钯、银复合电极作为栅极。
Claims (9)
1.一种电场调控的石墨烯/砷化镓太阳电池，其特征在于自下而上依次有背面电极（1）、n型掺杂或p型掺杂的砷化镓层（2）、石墨烯层（3）、绝缘介质层（5）和栅极（6），所述的太阳电池还设有正面电极（4），正面电极（4）设置在石墨烯层（3）上。
2.根据权利要求1所述的电场调控的石墨烯/砷化镓太阳电池，其特征在于所述的石墨烯层（3）中的石墨烯为1-10层。
3.根据权利要求1所述的电场调控的石墨烯/砷化镓太阳电池，其特征在于所述的绝缘介质层（5）为Al2O3、SiO2、SiNx、TiO2、SiC、SiON、HfO2、AlN、BN、聚二甲基硅氧烷、聚甲基丙烯酸甲酯、聚对苯二甲酸乙二醇酯、聚碳酸酯和聚苯乙烯中的一种或几种的叠层。
4.根据权利要求1所述的电场调控的石墨烯/砷化镓太阳电池，其特征在于所述的绝缘介质层（5）厚度为0.4nm-100μm。
5.根据权利要求1所述的电场调控的石墨烯/砷化镓太阳电池，其特征在于所述的栅极（6）为金、钯、银、钛、铬、镍、石墨烯、AZO、ITO和FTO中的一种或者几种的复合电极。
6.根据权利要求1所述的电场调控的石墨烯/砷化镓太阳电池，其特征在于所述的背面电极（1）为金、钯、银、钛、铬、镍、AZO、ITO和FTO中的一种或者几种的复合电极。
7.根据权利要求1所述的电场调控的石墨烯/砷化镓太阳电池，其特征在于所述的正面电极（4）为金、钯、银、钛、铜、铂、铬、镍、ITO、FTO和AZO中的一种或者几种的复合电极。
8.制备如权利要求1~7任一项所述的电场调控的石墨烯/砷化镓太阳电池的方法，其特征在于包括如下步骤：
1）在洁净的n型掺杂或p型掺杂的砷化镓片（2）的一面制作背面电极（1）；
2）将步骤1）所得砷化镓片在化学溶液中浸泡5s~30m进行表面清洗，取出并干燥；
3）将石墨烯转移至步骤2）所得砷化镓片的另一面上；
4）在石墨烯层（3）上制作正面电极（4），并在石墨烯层表面预留生长绝缘介质层（5）的面积；
5）在石墨烯层（3）上制作绝缘介质层（5）；
6）在绝缘介质层（5）上制作栅极（6）。
9.根据权利要求8所述的电场调控的石墨烯/砷化镓太阳电池的制备方法，其特征在于步骤2）所述的化学溶液为HCl、HNO3、H2SO4、KOH或NaOH的水溶液。
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| CN111755534A (zh) * | 2020-06-10 | 2020-10-09 | 浙江大学 | 一种石墨烯/半导体内建电场调控的pn结太阳能电池及其制备方法 |
| CN111755534B (zh) * | 2020-06-10 | 2022-03-11 | 浙江大学 | 一种石墨烯/半导体内建电场调控的pn结太阳能电池及其制备方法 |
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