CN106229363B - 一种含有黑磷层的太阳能电池及黑磷层的制备方法 - Google Patents

一种含有黑磷层的太阳能电池及黑磷层的制备方法 Download PDF

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CN106229363B
CN106229363B CN201610609178.5A CN201610609178A CN106229363B CN 106229363 B CN106229363 B CN 106229363B CN 201610609178 A CN201610609178 A CN 201610609178A CN 106229363 B CN106229363 B CN 106229363B
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楼颖
孙可桢
刘苍旻
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Abstract

本发明提供一种含有黑磷层的太阳能电池及其黑磷层制备方法,太阳能电池包括背电极层、在背电极层上的光吸收层、在光吸收层上的黑磷层以及在黑磷层上的缓冲层,其中,黑磷层可为有机无机杂化层。本发明通过将黑磷晶体与太阳能电池的有源层结合,以提高太阳能的电池的光电转换效率,以及减少缓冲层与光吸收层之间的带隙能量差,提高太阳能电池的光电转换能力。

Description

一种含有黑磷层的太阳能电池及黑磷层的制备方法
技术领域
本发明涉及一种太阳能电池及其制备方法,具体涉及一种含有黑磷层的太阳能电池及其黑磷层制备方法。
背景技术
黑磷是磷的一种同素异形体,具有金属光泽的晶体或无定形固体,层状结构,有导电性,在干燥的空气中、室温时化学性质较稳定,曾经一度被认为没有使用价值,但是直到2014年研究人员才意识到它可能是一种半导体材料。
黑磷和另一种二维材料——石墨烯有很多的共同点,不过黑磷与石墨稀相比尤为显著的一点是黑磷中存在能隙,通常也称为带隙。含有带隙的物质一般被称为“半导体”,它是一类特殊的物质,仅当物质中的电子吸收到足以在带隙间发生跃迁的高能量时,才能导电。 虽然现在石墨烯的广泛应用已被证明,但是它的缺点是没有带隙。这就意味着石墨烯总是导电的,电量泄露也是这类石墨烯器件的缺点之一,即在本质上,这些器件始终是开启状态因而会一直漏电。 而另一方面,黑磷的带隙可在一个很宽的范围内调节,这取决于所堆积的层数。这就意味着黑磷在可见光和红外范围内均可吸收光。大范围的可调性使得黑磷这一独特的物质有着广泛应用,其应用领域包括化学传感至光学通讯等。
现有的太阳能电池发电是通过太阳能电池板吸收太阳光,通过光电转换进行发电,其光电转换效率在12%到18%,转换效率不高一直是制约太阳能电池产业发展的关键因素之一。 本发明通过将黑磷晶体与太阳能电池的有源层结合,以提高太阳能的电池的光电转换效率,以及减少缓冲层与光吸收层之间的带隙能量差,提高太阳能电池的光电转换能力。
发明内容
本发明提供一种含有黑磷层的太阳能电池及其黑磷层制备方法,具体而言,本发明的技术方案主要是通过以下方式实现的:
本发明提供一种含有黑磷层的太阳能电池,包括:背电极层;在所述背电极层上的光吸收层;在所述光吸收层上的黑磷层,以及在所述黑磷层上的缓冲层,其中,黑磷层可为有机无机杂化层。
进一步地,所述太阳能电池可形成一组或多组光吸收层与黑磷层的叠层。
本发明还提供一种所述太阳能电池的黑磷层的制备方法,具体的工艺包括以下步骤:
步骤1.在惰性气体的保护下,制备黑磷的悬浮液;
步骤2.在惰性气体的保护下,向黑磷的悬浮液中依次加入烷基胺和有机溶剂并持续搅拌形成有机溶液1;
步骤3.配置γ-(甲基丙烯酰氧)丙基三甲氧基硅烷、四乙氧基硅烷、正硅酸四乙脂和N,N-二甲基甲酰胺的有机溶液2;
步骤4. 在惰性气体的保护下,将步骤3配置的有机溶液2倒入步骤2配置的有机溶液1中,不断搅拌直至形成半凝固物质;
步骤5. 将所形成的半凝固物质通过旋涂法,涂布于太阳能电池的光吸收层上;
步骤6,将涂布有半凝固物质的太阳能电池片放入紫外光的环境下照射,并在温度为150-200℃的条件下保温2-4小时,将半凝固物质转化为黑磷层;
进一步地,在步骤1中,可将制备好的黑磷均匀分散于N , N - 二甲基甲酰胺(DMF)溶剂中,并超声分散。
进一步地,在步骤2和步骤3中所用的有机溶剂可为乙醇、氯仿或甲苯中的一种或几种。
进一步地,可重复步骤6与步骤7形成多层黑磷层。
附图说明
图1为本发明所描述的太阳能电池的结构示意图;
具体实施例说明
实施例1
如图1所示,太阳能电池,包括:背电极层100;在所述背电极层上的光吸收层200;在所述光吸收层上的黑磷层300,以及在所述黑磷层上的缓冲层420,其中,黑磷层可为有机无机杂化层。
实施例2
太阳能电池的黑磷层的制备方法,具体步骤为:
步骤1.在氩气的保护下,制备黑磷的DMF悬浮液,并超声分散;
步骤2.在氩气的保护下,向黑磷的悬浮液中依次加入烷基胺、氯仿并持续搅拌2-4小时;
步骤3.以摩尔比1:1:1:1的比例配置γ-(甲基丙烯酰氧)丙基三甲氧基硅烷、四乙氧基硅烷、正硅酸四乙脂和N,N-二甲基甲酰胺形成有机溶液2;
步骤4. 在氩气的保护下,将步骤3配置的有机溶液2倒入步骤2配置的有机溶液1中,搅拌6-10小时形成半凝固物质;
步骤5. 将所形成的半凝固物质通过旋涂法,涂布于太阳能电池的光吸收层上;
步骤6,将涂布有半凝固物质的太阳能电池片放入紫外光的环境下照射,并温度为150℃的条件下保温3小时,将半凝固物质转化为黑磷层;
实施例3
太阳能电池的黑磷层的制备方法,具体步骤为:
步骤1.在氦气的保护下,制备黑磷的DMF悬浮液,并超声分散;
步骤2.在氦气的保护下,向黑磷的悬浮液中依次加入十二- 十八胺、甲苯并持续搅拌2-4小时;
步骤3.以摩尔比1.5:1.5:1:1的比例配置γ-(甲基丙烯酰氧)丙基三甲氧基硅烷、四乙氧基硅烷、正硅酸四乙脂和N,N-二甲基甲酰胺形成有机溶液2;
步骤4. 在氦气的保护下,将步骤3配置的有机溶液2倒入步骤2配置的有机溶液1中,搅拌6-10小时形成半凝固物质;
步骤5. 将所形成的半凝固物质通过旋涂法,涂布于太阳能电池的光吸收层上;
步骤6,将涂布有半凝固物质的太阳能电池片放入紫外光的环境下照射,并温度为200℃的条件下保温2小时,将半凝固物质转化为黑磷层;
以上实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围。

Claims (4)

1.一种含有黑磷层的太阳能电池,其特征在于,包括:背电极层;在所述背电极层上的光吸收层;在所述光吸收层上的黑磷层,以及在所述黑磷层上的缓冲层,其中,黑磷层可为有机无机杂化层;
其中,所述黑磷层的制备方法为:
步骤1.在惰性气体的保护下,制备黑磷的悬浮液;
步骤2.在惰性气体的保护下,向黑磷的悬浮液中依次加入烷基胺和有机溶剂并持续搅拌形成有机溶液1;
步骤3.配置γ-(甲基丙烯酰氧)丙基三甲氧基硅烷、四乙氧基硅烷、正硅酸四乙脂和N,N-二甲基甲酰胺的有机溶液2;
步骤4.在惰性气体的保护下,将步骤3配置的有机溶液2倒入步骤2配置的有机溶液1中,不断搅拌直至形成半凝固物质;
步骤5.将所形成的半凝固物质通过旋涂法,涂布于太阳能电池的光吸收层上;
步骤6.将涂布有半凝固物质的太阳能电池片放入紫外光的环境下照射,并在温度为150-200℃的条件下保温2-4小时,将半凝固物质转化为黑磷层。
2.根据权利要求1所述的含有黑磷层的太阳能电池,其特征在于,可形成一组或多组光吸收层与黑磷层的叠层。
3.根据权利要求1所述的含有黑磷层的太阳能电池,其特征在于,可将制备好的黑磷均匀分散于N,N-二甲基甲酰胺(DMF)溶剂中,并超声分散。
4.根据权利要求1所述的含有黑磷层的太阳能电池,其特征在于所用的有机溶剂可为乙醇、氯仿或甲苯中的一种或几种。
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4247528A (en) * 1979-04-11 1981-01-27 Dow Corning Corporation Method for producing solar-cell-grade silicon
EP2975625A1 (en) * 2014-07-11 2016-01-20 LSIS Co., Ltd. Relay
CN105679861A (zh) * 2016-01-20 2016-06-15 浙江大学 一种表面等离子增强的二维材料/半导体异质结太阳能电池及其制备方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4247528A (en) * 1979-04-11 1981-01-27 Dow Corning Corporation Method for producing solar-cell-grade silicon
EP2975625A1 (en) * 2014-07-11 2016-01-20 LSIS Co., Ltd. Relay
CN105679861A (zh) * 2016-01-20 2016-06-15 浙江大学 一种表面等离子增强的二维材料/半导体异质结太阳能电池及其制备方法

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