CN110137295B - 一种二硫化钼/镓铟氮或铝镓砷多结异质太阳能电池及其制备方法 - Google Patents

一种二硫化钼/镓铟氮或铝镓砷多结异质太阳能电池及其制备方法 Download PDF

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CN110137295B
CN110137295B CN201910305472.0A CN201910305472A CN110137295B CN 110137295 B CN110137295 B CN 110137295B CN 201910305472 A CN201910305472 A CN 201910305472A CN 110137295 B CN110137295 B CN 110137295B
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gallium indium
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林时胜
孙利杰
沈闰江
周大勇
陆阳华
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Shanghai Institute of Space Power Sources
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Abstract

本发明公开了一种二硫化钼/镓铟氮或铝镓砷多结异质太阳能电池，自底而上依次是背电极层、多结半导体衬底层、二硫化钼/镓铟氮或铝镓砷层、量子点层，此外还设置有正面电极；所述的多结半导体衬底层包括多结电池，并在多结电池顶部设置有隧穿层，镓铟氮或铝镓砷设于上述隧穿层上，量子点层设置于二硫化钼上。本发明的多结异质太阳能电池利用二硫化钼和半导体镓铟氮或铝镓砷形成异质结可以在无需外加电源的情况下完成光电转化，同时镓铟氮、铝镓砷等半导体禁带宽度大，可以吸收更短的太阳光波长，进一步提升多结太阳能电池效率。本发明的二硫化钼/镓铟氮(铝镓砷)多结异质太阳能电池的转化效率高，工艺较简单，有广阔的应用前景。

Description

一种二硫化钼/镓铟氮或铝镓砷多结异质太阳能电池及其制 备方法
技术领域
本发明涉及一种太阳能电池及其制造方法，尤其涉及一种二硫化钼/镓铟氮或铝镓砷多结异质太阳能电池及其制备方法，属于新型多结太阳能电池技术领域。
背景技术
自二硫化钼于2008年合成以来，这个由一个太阳能电池作为一种新型绿色能源，是人类的可持续发展最重要的可再生能源。目前，晶体硅太阳能电池占据市场～90％的份额。但与常规发电相比，太阳电池发电成本仍然较高，限制了其广泛应用。太阳电池发电成本较高的原因是电池制造成本较高及光电转化效率较低。
过渡金属原子(即钼原子)和一对包括硫、硒元素在内的来自元素周期表ⅥA族的原子组成的材料就因其优异的性能吸引了广泛的关注。它是兼具柔韧性和透明度，拥有石墨烯无法企及的电子特性的二维片状材料，同时薄度与石墨烯接近，电子迁移率虽然不及石墨烯，但是高于一般超薄半导体，且为直接带隙半导体，禁带宽度为1.8eV。另外它可以通过化学气相沉积的方法大面积合成，上述特性让它在太阳能电池领域有很大的应用前景，如何利用二硫化钼来提升目前太阳能电池的效率成为了目前研究中的一个焦点。
本发明基于以上特性，提出了二硫化钼/镓铟氮(铝镓砷)多结异质太阳能电池，旨在进一步提升太阳能电池的效率。二硫化钼/镓铟氮 (铝镓砷)多结异质的一个重要特点就是结区基本位于器件表面，因此通过前表面的设计可以有效的通过吸收更宽范围波长的光来进一步提高二硫化钼/镓铟氮(铝镓砷)多结异质太阳能电池的转化效率。
发明内容
本发明的目的在于提供一种二硫化钼/镓铟氮或铝镓砷多结异质太阳能电池及其制备方法。
本发明采用的技术方案如下：
一种二硫化钼/镓铟氮或铝镓砷多结异质太阳能电池，自底而上依次是背电极层、多结半导体衬底层、二硫化钼/镓铟氮或铝镓砷层、量子点层，在二硫化钼层/镓铟氮或铝镓砷层上还设置有正面电极；所述的多结半导体衬底层包括多结电池，并在多结电池顶部设置有隧穿层，二硫化钼/镓铟氮或铝镓砷层中镓铟氮或铝镓砷设于上述隧穿层上并与隧穿层直接接触，量子点层设置于二硫化钼上且二者直接接触。
上述技术方案中，进一步的，所述的多结电池为由Ge单结、GaAs 单结、和GaInP单结自下而上构成的三结电池，在相邻两单结之间均设置有隧穿层。
进一步的，所述的隧穿层的材料选择重掺杂的下述材料之一： AlGaAs、GaInP、GaAs、InGaAs。
进一步的，所述的量子点层为金、银、铝、或镍量子点，量子点尺寸为5纳米至200纳米。
进一步的，所述的二硫化钼的厚度为含1到10层原子。
进一步的，所述的背面电极是金、银、钯、钛、铬、镍、ITO、 FTO、AZO的一种电极或者几种的复合电极。
进一步的，所述的正面电极是金、钯、银、钛、铜、铂、铬、镍、 ITO、FTO、AZO的一种电极或者几种的复合电极。
上述的二硫化钼/镓铟氮或铝镓砷多结异质太阳能电池的制备方法，包括如下步骤：
1)在洁净的多结半导体衬底层的一面制作背面电极；
2)在多结半导体衬底层另一面上利用化学气相沉积法生长镓铟氮或者铝镓砷层；
3)将二硫化钼转移至步骤2)所得的镓铟氮或铝镓砷层上，转移方法为：在生长于原始衬底上的二硫化钼表面作柔性高分子材料支撑层，将二硫化钼和上述支撑层一起从原始衬底上转移至镓铟氮或铝镓砷上，然后去除支撑层，使二硫化钼覆盖在镓铟氮或铝镓砷上；
4)在二硫化钼上作正面电极并旋涂量子点。
本发明利用二硫化钼/镓铟氮(铝镓砷)其结区位于器件表面的特征，结合表面等离子增强直接作用于异质结结区，相比较于传统 pn结结区处于相对较深的位置，本发明提出的表面等离子共振可以有效提高二硫化钼/镓铟氮(铝镓砷)多结异质太阳能电池的转化效率，效果显著，工艺简单，便于推广。
附图说明
图1为二硫化钼/镓铟氮(铝镓砷)多结异质太阳能电池的结构示意图；
图2为本发明多结异质太阳能电池在暗态下电流密度-电压曲线 (插图为拟合获得电阻的直线)；
图3为有、无量子点层的多结异质太阳能电池光照下的电流密度-电压曲线对比(方点为无量子点层，圆点为有量子点层)；
图4是本发明多结异质太阳能电池在有无光照下的电压电流曲线。
具体实施方式
下面结合附图和具体实施例对本发明做进一步说明。
参照图1，本发明的二硫化钼/镓铟氮(或铝镓砷)多结异质太阳能电池，自下而上依次有背面电极1、多结半导体衬底层2、二硫化钼 /镓铟氮或铝镓砷层3、量子点层5，在二硫化钼上还设有正面电极4。
多结半导体衬底层2采用的是多结电池，结构是由Ge单结、GaAs 单结、和GaInP单结(单结即指pn结)自下而上构成的三结电池，在相邻两单结之间均设置有隧穿层，此外在多结电池最顶层也设置有隧穿层。
实施例1：
1)在多结电池中锗单结一面利用热蒸发沉积金电极；
2)在多结电池镓铟磷单结一面利用化学气相沉积法生长镓铟氮；
3)将单层二硫化钼利用PMMA作为支撑层转移到镓铟氮上；
4)在二硫化钼上直接涂银浆并烘干作为正面电极，并预留面积；
5)在二硫化钼预留面积上旋涂80纳米粒径的金量子点溶液得到表面等离子增强的二硫化钼/镓铟氮多结异质太阳能电池。
得到的表面等离子增强的二硫化钼/镓铟氮多结异质太阳能电池，光照情况下在表面的金颗粒表面产生局域场增强，这种场增强渗透到二硫化钼/半导体结区，提高光在太阳能电池中的吸收和收集，提高光电转换效率。
实施例2：
1)在多结电池中锗单结一面利用热蒸发沉积铬金复合电极；
2)在多结电池镓铟磷单结一面利用化学气相沉积法生长铝镓砷；
3)将十层厚的二硫化钼利用PMMA作为支撑层转移到铝镓砷上；
4)在二硫化钼层上利用磁控溅射沉积镍作为正面电极，并预留面积；
5)在二硫化钼预留面积上旋涂200纳米粒径的银量子点溶液得到表面等离子增强的二硫化钼/铝镓砷多结异质太阳能电池。
实施例3：
1)在多结电池中锗单结一面利用热蒸发沉积铂电极；
2)在多结电池镓铟磷单结一面利用化学气相沉积法生长镓铟氮；
3)将三层厚的二硫化钼利用PMMA作为支撑层转移到镓铟氮上；
4)在二硫化钼上打印银浆并烘干作为正面电极，并预留面积；
5)在二硫化钼预留面积上无电极的部分旋涂5纳米粒径的铝量子点溶液得到表面等离子增强的二硫化钼/镓铟氮多结异质太阳能电池。
实施例4：
1)在多结电池中锗单结一面利用热蒸发沉积铬电极；
2)在多结电池镓铟磷单结一面利用化学气相沉积法生长铝镓砷；
3)将5层厚的二硫化钼利用PMMA作为支撑层转移到铝镓砷上；
4)在二硫化钼上磁控溅射AZO作为正面电极，并预留面积；
5)在二硫化钼预留面积上热蒸发沉积10纳米厚的超薄镍层并在 400摄氏度退火30分钟得到镍量子点层，获得表面等离子增强的二硫化钼/铝镓砷多结异质太阳能电池。
采用本发明方法制得的多结异质太阳能电池利用二硫化钼和半导体镓铟氮或铝镓砷形成异质结可以在无需外加电源的情况下完成光电转化，同时镓铟氮、铝镓砷等半导体禁带宽度大，可以吸收更短的太阳光波长，进一步提升多结太阳能电池效率；此外，利用量子点产生的局域场增强，渗透到距表面很浅的二硫化钼/镓铟氮或铝镓砷的结区中，可以有效提高光在太阳能电池中的吸收和收集，提高光电转换效率；图3为有、无量子点层的多结异质太阳能电池光照下的电流密度-电压曲线对比；图4为本发明的多结异质太阳能电池在有无光照下的电压电流曲线。

Claims (6)

1.一种二硫化钼/镓铟氮或铝镓砷多结异质太阳能电池，其特征在于：自底而上依次是背电极层（1）、多结半导体衬底层（2）、二硫化钼/镓铟氮或铝镓砷层（3）、量子点层（5），在二硫化钼层/镓铟氮或铝镓砷层（3）上还设置有正面电极（4）；所述的多结半导体衬底层（2）包括多结电池，并在多结电池顶部设置有隧穿层，二硫化钼/镓铟氮或铝镓砷层（3）中镓铟氮或铝镓砷设于上述隧穿层上并与隧穿层直接接触，量子点层设置于二硫化钼上且二者直接接触；所述的二硫化钼的厚度为含1到10层原子；所述的多结电池为由Ge单结、GaAs单结、和GaInP单结自下而上构成的三结电池，在相邻两单结之间均设置有隧穿层，所述量子点尺寸为5纳米至200纳米。
2.根据权利要求1所述的二硫化钼/镓铟氮或铝镓砷多结异质太阳能电池，其特征在于，所述的隧穿层的材料选择重掺杂的下述材料之一：AlGaAs、GaInP、GaAs、InGaAs。
3.根据权利要求1所述的二硫化钼/镓铟氮或铝镓砷多结异质太阳能电池，其特征在于，所述的量子点层（5）为金、银、铝、或镍量子点。
4.根据权利要求1所述的二硫化钼/镓铟氮或铝镓砷多结异质太阳能电池，其特征在于，所述的背电极（1）是金、银、钯、钛、铬、镍、ITO、FTO、AZO的一种电极或者几种的复合电极。
5.根据权利要求1所述的二硫化钼/镓铟氮或铝镓砷多结异质太阳能电池，其特征在于，所述的正面电极（4）是金、钯、银、钛、铜、铂、铬、镍、ITO、FTO、AZO的一种电极或者几种的复合电极。
6.制备如权利要求1-5任一项所述的二硫化钼/镓铟氮或铝镓砷多结异质太阳能电池的方法，其特征在于，该方法包括如下步骤：
1）在洁净的多结半导体衬底层的一面制作背面电极；
2）在多结半导体衬底层另一面上利用化学气相沉积法生长镓铟氮或者铝镓砷层；
3）将二硫化钼转移至步骤2）所得的镓铟氮或铝镓砷层上，转移方法为：在生长于原始衬底上的二硫化钼表面作柔性高分子材料支撑层，将二硫化钼和上述支撑层一起从原始衬底上转移至镓铟氮或铝镓砷上，然后去除支撑层，使二硫化钼覆盖在镓铟氮或铝镓砷上；
4）在二硫化钼上作正面电极并旋涂量子点。
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