CN105668577B - K3Ba3Li2Al4B6O20F化合物、K3Ba3Li2Al4B6O20F非线性光学晶体及其制法和用途 - Google Patents
K3Ba3Li2Al4B6O20F化合物、K3Ba3Li2Al4B6O20F非线性光学晶体及其制法和用途 Download PDFInfo
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- CN105668577B CN105668577B CN201610015381.XA CN201610015381A CN105668577B CN 105668577 B CN105668577 B CN 105668577B CN 201610015381 A CN201610015381 A CN 201610015381A CN 105668577 B CN105668577 B CN 105668577B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
- C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
- C30B9/12—Salt solvents, e.g. flux growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/12—Halides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
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- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610015381.XA CN105668577B (zh) | 2016-01-11 | 2016-01-11 | K3Ba3Li2Al4B6O20F化合物、K3Ba3Li2Al4B6O20F非线性光学晶体及其制法和用途 |
PCT/CN2016/076020 WO2017121024A1 (fr) | 2016-01-11 | 2016-03-10 | Composé de k3ba3li2al4b6o20f, son cristal optique non linéaire, et son procédé de préparation et son utilisation |
Applications Claiming Priority (1)
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CN201610015381.XA CN105668577B (zh) | 2016-01-11 | 2016-01-11 | K3Ba3Li2Al4B6O20F化合物、K3Ba3Li2Al4B6O20F非线性光学晶体及其制法和用途 |
Publications (2)
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CN105668577A CN105668577A (zh) | 2016-06-15 |
CN105668577B true CN105668577B (zh) | 2018-09-28 |
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CN201610015381.XA Active CN105668577B (zh) | 2016-01-11 | 2016-01-11 | K3Ba3Li2Al4B6O20F化合物、K3Ba3Li2Al4B6O20F非线性光学晶体及其制法和用途 |
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CN (1) | CN105668577B (fr) |
WO (1) | WO2017121024A1 (fr) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106192002B (zh) * | 2015-05-09 | 2018-05-11 | 中国科学院新疆理化技术研究所 | 铷硼碳氧碘氢和铷硼碳氧碘氢非线性光学晶体及制备方法和用途 |
CN106868588A (zh) * | 2017-01-19 | 2017-06-20 | 中国科学院福建物质结构研究所 | Rb3Ba3Li2Al4B6O20F化合物、非线性光学晶体及其制法和用途 |
CN106868589A (zh) * | 2017-01-19 | 2017-06-20 | 中国科学院福建物质结构研究所 | K3Sr3Li2Al4B6O20F化合物、非线性光学晶体及其制法和用途 |
CN106884204B (zh) * | 2017-02-27 | 2020-02-14 | 中国科学院新疆理化技术研究所 | 锂钾锶铝硼氧氟和锂钾锶铝硼氧氟非线性光学晶体及制备方法和用途 |
CN106868587B (zh) * | 2017-03-29 | 2020-02-14 | 中国科学院新疆理化技术研究所 | 锂铷钡铝硼氧氟和锂铷钡铝硼氧氟非线性光学晶体及制备方法和用途 |
CN109112628A (zh) * | 2018-10-30 | 2019-01-01 | 中国科学院福建物质结构研究所 | Ga掺杂的K3Ba3Li2Al4B6O20F单晶、制法及变频器件 |
CN115198364B (zh) * | 2021-04-09 | 2023-11-28 | 中国科学院理化技术研究所 | 氟锗酸钪铷锂非线性光学晶体及其制备方法和应用 |
CN115198343B (zh) * | 2021-04-09 | 2023-11-28 | 中国科学院理化技术研究所 | 氟硅酸钪铷锂非线性光学晶体及其制备方法和应用 |
CN114000201B (zh) * | 2021-10-27 | 2023-03-28 | 中国科学院福建物质结构研究所 | K4(hc3n3s3)2·h2o化合物、晶体及其制法和用途 |
CN115874284A (zh) * | 2022-11-10 | 2023-03-31 | 中国科学院福建物质结构研究所 | Li9Na3Cs2(SO4)7化合物、非线性光学晶体及其制法和用途 |
CN115928207B (zh) * | 2022-11-17 | 2024-06-14 | 四川大学 | 一种硒锂化合物多晶材料的合成方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20070037288A (ko) * | 2005-09-30 | 2007-04-04 | 서울반도체 주식회사 | 발광 소자 및 이를 포함한 led 백라이트 |
CN102828245A (zh) * | 2011-06-15 | 2012-12-19 | 中国科学院理化技术研究所 | 一种氟硼铍酸钙钠非线性光学晶体及生长方法和用途 |
CN104556084A (zh) * | 2014-12-15 | 2015-04-29 | 中国科学院福建物质结构研究所 | Rb3Al3B3O10F化合物、Rb3Al3B3O10F非线性光学晶体及其制法和用途 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1075845C (zh) * | 1997-10-28 | 2001-12-05 | 中国科学院福建物质结构研究所 | 非线性光学晶体硼酸铝氧钡 |
WO2003033780A1 (fr) * | 2001-10-16 | 2003-04-24 | Utar Scientific Inc. | Methode de croissance de cristaux piezoelectriques de gallium-lanthanide |
WO2010009581A1 (fr) * | 2008-07-25 | 2010-01-28 | 中国科学院福建物质结构研究所 | Monocristal de métaborate de baryum en phase basse température dopé, procédé de croissance et convertisseur de fréquence associé |
CN101831706B (zh) * | 2009-03-13 | 2014-03-05 | 中国科学院福建物质结构研究所 | 一种紫外低吸收YAl3(BO3)4晶体的生长方法 |
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2016
- 2016-01-11 CN CN201610015381.XA patent/CN105668577B/zh active Active
- 2016-03-10 WO PCT/CN2016/076020 patent/WO2017121024A1/fr active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20070037288A (ko) * | 2005-09-30 | 2007-04-04 | 서울반도체 주식회사 | 발광 소자 및 이를 포함한 led 백라이트 |
CN102828245A (zh) * | 2011-06-15 | 2012-12-19 | 中国科学院理化技术研究所 | 一种氟硼铍酸钙钠非线性光学晶体及生长方法和用途 |
CN104556084A (zh) * | 2014-12-15 | 2015-04-29 | 中国科学院福建物质结构研究所 | Rb3Al3B3O10F化合物、Rb3Al3B3O10F非线性光学晶体及其制法和用途 |
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WO2017121024A1 (fr) | 2017-07-20 |
CN105668577A (zh) | 2016-06-15 |
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