CN105658727A - 环氧树脂组合物、半导体密封剂及半导体装置 - Google Patents

环氧树脂组合物、半导体密封剂及半导体装置 Download PDF

Info

Publication number
CN105658727A
CN105658727A CN201480058369.6A CN201480058369A CN105658727A CN 105658727 A CN105658727 A CN 105658727A CN 201480058369 A CN201480058369 A CN 201480058369A CN 105658727 A CN105658727 A CN 105658727A
Authority
CN
China
Prior art keywords
composition
epoxy resin
mentioned
semiconductor
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201480058369.6A
Other languages
English (en)
Other versions
CN105658727B (zh
Inventor
山泽朋也
小原和之
小越弘大
阿部信幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Namics Corp
Original Assignee
Namics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Namics Corp filed Critical Namics Corp
Publication of CN105658727A publication Critical patent/CN105658727A/zh
Application granted granted Critical
Publication of CN105658727B publication Critical patent/CN105658727B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/22—Di-epoxy compounds
    • C08G59/24—Di-epoxy compounds carbocyclic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/22—Di-epoxy compounds
    • C08G59/24—Di-epoxy compounds carbocyclic
    • C08G59/245—Di-epoxy compounds carbocyclic aromatic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/50—Amines
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/50—Amines
    • C08G59/5033—Amines aromatic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62—Alcohols or phenols
    • C08G59/621—Phenols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J3/00—Processes of treating or compounding macromolecular substances
    • C08J3/20—Compounding polymers with additives, e.g. colouring
    • C08J3/22—Compounding polymers with additives, e.g. colouring using masterbatch techniques
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K9/00—Use of pretreated ingredients
    • C08K9/04—Ingredients treated with organic substances
    • C08K9/06—Ingredients treated with organic substances with silicon-containing compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00—Specific properties of additives
    • C08K2201/002—Physical properties
    • C08K2201/005—Additives being defined by their particle size in general
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2203/00—Applications
    • C08L2203/20—Applications use in electrical or conductive gadgets
    • C08L2203/206—Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13109—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13113—Bismuth [Bi] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13116—Lead [Pb] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/13118—Zinc [Zn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/1312—Antimony [Sb] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13139—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13155—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13157—Cobalt [Co] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/13164—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H01L2224/29291—The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2224/29387—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83102—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus using surface energy, e.g. capillary forces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83862—Heat curing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Processes Of Treating Macromolecular Substances (AREA)

Abstract

本发明提供一种环氧树脂组合物，其包含(A)环氧树脂、(B)固化剂、(C)0.1～10质量％的平均粒径为10nm以上且100nm以下的二氧化硅填料、(D)47～75质量％的平均粒径为0.3μm以上且2μm以下的二氧化硅填料和(E)0.1～8质量％的弹性体，并且该环氧树脂组合物包含合计50.1～77质量％的所述(C)成分和所述(D)成分。

Description

环氧树脂组合物、半导体密封剂及半导体装置
技术领域
本申请要求于2013年11月29日向日本特许厅提交的日本专利申请2013-247567号的优先权，其全部内容以引用的方式并入本文。
本发明涉及一种环氧树脂组合物、半导体密封剂及半导体装置。
背景技术
在将半导体芯片(半导体元件)安装于布线基板的技术中存在倒装芯片安装。倒装芯片安装是通过在半导体芯片的表面形成突起状电极(凸块)而使该表面朝向布线基板直接连接的安装方法。为了保护所连接的半导体芯片及布线基板、以及凸块，将被称作底部填充剂的密封树脂填充在半导体芯片与布线基板之间。
底部填充剂主要使用环氧树脂。环氧树脂、半导体芯片及布线基板分别具有不同的线膨胀系数。因此，若连接部不能吸收应力，则在该连接部会产生裂纹。为了抑制该裂纹的产生，而使二氧化硅等线膨胀系数较小的填料分散到底部填充剂中。
但是，近年来，在倒装芯片安装中使用由金属柱得到的凸块。例如，铜柱凸块与以往的焊料凸块相比具有以下的各种优点。即，可以利用铜柱凸块减小凸块的间距。由于能够降低铅的使用量，因此对环境造成的影响小。铜柱凸块的导热性高，因此散热特性优异。进而，由于导电度高，因此可以降低寄生电阻。但是，若使用金属柱凸块，则底部填充剂中的填料会分离。认为这是由于：因在柱中所使用的金属与焊料中所使用的金属之间产生的电位差而使填料在底部填充剂中泳动，由此产生填料的分离。
为此，对抑制底部填充剂中的填料的分离(促使填料的分散)的技术进行了研究。在专利文献1中，以焊料覆盖金属柱的表面来形成覆膜。由此公开了促进底部填充剂中的填料的分散且提高倒装芯片安装的连接可靠性的电子部件的安装方法。
现有技术文献
专利文献1：国际公开第2010/103934号公报
发明内容
本发明提供例如不采用以焊料覆盖金属柱的表面形成覆膜这样的特别工序即会促进填料的分散的树脂组合物。
用于解决技术问题的技术手段
本发明涉及的环氧树脂组合物，其特征在于，其包含(A)环氧树脂、(B)固化剂、(C)0.1～10质量％的平均粒径为10nm以上且100nm以下的二氧化硅填料、(D)47～75质量％的平均粒径为0.3μm以上且2μm以下的二氧化硅填料和(E)0.1～8质量％的弹性体，该环氧树脂组合物包含共计50.1～77质量％的上述(C)成分及上述(D)成分。
上述(C)成分及上述(D)成分中的至少一方可以被硅烷偶联剂进行过表面处理。
上述(D)成分可以被以下式(1)所示结构式来表示的氨基硅烷进行过表面处理。
[化1]
上述环氧树脂组合物可以包含相对于上述(A)成分的环氧基1当量为0.5当量以上且1.8当量以下的上述(B)成分。
上述(B)成分可以为酸酐固化剂、酚醛树脂固化剂或胺固化剂。
上述(A)成分可以包含双酚F型环氧树脂、双酚A型环氧树脂、萘型环氧树脂、氨基苯酚型环氧树脂中的至少一种
另外，在上述的方式中，上述(E)成分可以包含丁二烯系弹性体、硅酮系弹性体、丙烯酸共聚物、苯乙烯丁二烯系弹性体、丁二烯－丙烯腈－甲基丙烯酸2,3-环氧丙基酯－二乙烯基苯共聚物、丁二烯－丙烯腈－甲基丙烯酸－二乙烯基苯共聚物、氨基末端丁二烯－丙烯腈共聚物及羧基末端丁二烯－丙烯腈共聚物中的至少一种。
该树脂组合物可以通过对上述(A)成分的至少一部分混合上述(C)成分来生成母料并在该母料中混合其他成分来制造。
另外，本发明提供一种使用了上述的环氧树脂组合物的半导体密封剂。
上述半导体密封剂可以对利用2种以上的金属或合金形成的半导体装置的导通部分进行密封。
上述2种以上的金属或合金可以为从Au、Ag、Cu、Sn、Pb、Ni、Pd、Co、Cd、Bi、In、Sb及Zn中选择的2种以上的金属或以该金属为基础的合金。
所密封的上述半导体装置的导通部分为2种金属或合金，将密封了上述导通部分的上述环氧树脂组合物的剖面基于上述2种金属或合金之间的边界划分成2个区域，使用该各区域中的上述(C)成分及上述(D)成分的占有率，利用下式计算出的填料分散指数为50以上且150以下。
填料分散指数＝100×(区域Ra的占有率)/(区域Rb的占有率)
进而，本发明提供一种使用了上述的半导体密封剂的半导体装置。
根据本发明，可以促进填料的分散。
附图说明
图1是用于说明填料的分散指数的评价的图。
图2是将图1所示的区域II放大后的图。
具体实施方式
本发明的环氧树脂组合物包含(A)环氧树脂、(B)固化剂、(C)小直径二氧化硅填料、(D)大直径二氧化硅填料及(E)弹性体。
作为(A)成分的例子，可列举双酚F型环氧树脂、双酚A型环氧树脂、萘型环氧树脂、氨基苯酚型环氧树脂、苯酚酚醛清漆型环氧树脂、脂环式环氧树脂、硅氧烷型环氧树脂、联苯型环氧树脂、缩水甘油酯型环氧树脂、缩水甘油基胺型环氧树脂、乙内酰脲型环氧树脂及含萘环的环氧树脂。在环氧树脂组合物中，此处例示的化合物可以单独使用，还可以混合使用2种以上。
作为(B)成分的例子，可列举酸酐系固化剂、酚醛树脂系固化剂及胺系固化剂。优选以相对于(A)成分的环氧基1当量为0.5当量以上且1.8当量以下的量包含(B)成分。
作为(C)成分及(D)成分的例子，可列举非晶质二氧化硅、结晶性二氧化硅、熔融二氧化硅、粉碎二氧化硅及纳米二氧化硅。对(C)成分及(D)成分的形状并无特别限定。可以为粒状、粉末状及鳞片等中的任意形态。而且，本发明中的二氧化硅填料的平均粒径是指：无论二氧化硅填料的形状如何均利用激光衍射法或场致放射型扫描电子显微镜(FE-SEM)测定的体积基准的D50(中值粒径)。
(C)成分的平均粒径优选为10nm以上且100nm以下。(D)成分的平均粒径优选为0.3μm以上且2μm以下。本发明的环氧树脂组合物优选包含0.1质量％以上且10质量％以下的(C)成分、且包含47质量％以上且75质量％以下的(D)成分，进而，本发明的环氧树脂组合物优选包含共计50.1质量％以上且77质量％以下的(C)成分及(D)成分。更优选的(C)成分与(D)成分的合计范围为52质量％以上且77质量％以下的范围。
予以说明，(C)成分及(D)成分中的至少一方可以被硅烷偶联剂进行表面处理。作为表面处理中所使用的硅烷偶联剂，可列举环氧系、甲基丙烯酸系、氨基系、乙烯基系、环氧丙氧基系及巯基系等各种硅烷偶联剂。其中，在(D)成分的表面处理中优选使用下式(1)所示结构的氨基硅烷。
[化2]
作为(E)成分的例子，可列举丁二烯系弹性体、硅酮系弹性体、丙烯酸共聚物、苯乙烯丁二烯系弹性体、丁二烯－丙烯腈－甲基丙烯酸2,3-环氧丙基酯－二乙烯基苯共聚物、丁二烯－丙烯腈－甲基丙烯酸－二乙烯基苯共聚物、氨基末端丁二烯－丙烯腈共聚物及羧基末端丁二烯－丙烯腈共聚物。作为(E)成分，可以单独使用在此所例示的化合物，也可以混合使用2种以上的化合物。即，(E)成分只要为包含上述化合物中的至少一种的弹性体即可。优选包含0.1质量％以上且8质量％以下的(E)成分。
环氧树脂组合物除了(A)、(B)、(C)、(D)及(E)成分以外，还可以包含离子捕获剂、颜料、染料、消泡剂、应力缓和剂、pH调节剂、促进剂、表面活性剂及偶联剂等添加剂。
环氧树脂组合物被用作对半导体元件等电子器件进行倒装芯片安装或BGA(BallGridArray：球栅阵列封装)/CSP(ChipSizePackage：芯片尺寸封装)安装时的半导体密封剂(底部填充剂)。该环氧树脂组合物可以被用作将电子器件粘接于基板或封装体时的粘接剂。
在倒装芯片安装或BGA/CSP安装时，首先，将半导体元件与基板(或封装体)接合。接着，在半导体元件与基板的间隙注入半导体密封剂。具体而言，沿着半导体元件的外周涂布半导体密封剂。半导体密封剂通过毛细管现象扩散至间隙内。因此，半导体密封剂优选在进行该工艺的温度下为液状。通过加热(例如80～165℃)使所注入的半导体密封剂热固化。
图1例示出使用本发明涉及的半导体密封剂所密封的半导体装置。在图1中示出使用了金属柱的倒装芯片安装的例子。予以说明，图1示出半导体装置的剖面。
在基板1上形成有电极2。在除电极2以外的场所形成有绝缘膜3。在电极2上配置焊料凸块4。另外，在半导体芯片5上(在图中朝下)形成有电极7。半导体芯片5整体被钝化物9覆盖。在相当于电极7的位置设置有开口。在电极7上形成有作为金属柱的一种的铜柱8。
铜柱8由铜(Cu)或以铜为主体的合金形成。焊料凸块4由以锡(Sn)为主体的合金形成。予以说明，焊料凸块及金属柱的材料并不限于在此所例示的物质。焊料凸块及金属柱由例如从Au、Ag、Cu、Sn、Pb、Ni、Pd、Co、Cd、Bi、In、Sb及Zn中选择的2种以上的金属或以该金属为基础的合金形成。这样，本实施方式涉及的半导体密封剂被用于密封导通部分由2种以上的金属或以该金属为基础的合金形成的半导体装置的导通部分。
环氧树脂组合物例如通过对(A)成分～(E)成分及其他添加剂等同时或分别边根据需要进行加热处理边对其进行搅拌、熔融、混合或使其分散来制造。对它们的混合、搅拌及分散等的方法并无特别限定。可以使用具备搅拌装置及加热装置的擂溃机、三辊磨机、球磨机、行星式搅拌器或珠磨机等。另外，也可以将这些装置组合使用。在此，可以通过将(A)成分和(C)成分混合来制备母料。通过将所得的母料与其他成分混合，从而可以制造环氧树脂组合物。
实施例
(1)环氧树脂组合物的制备
表1～10示出在实施例1～37及比较例1～9中被用作密封剂的环氧树脂组合物的组成。另外，这些表也示出后述的作为密封剂的环氧树脂组合物的评价结果。在表1～10中，环氧树脂组合物的组成除当量比外还以质量份(质量份的总和为100，因此相当于质量％)来表示。
作为表中的(A)成分，使用环氧树脂a1～a5中的至少1种。作为环氧树脂a1，使用作为双酚F型环氧树脂的一种的新日铁住金化学株式会社制的YDF8170。作为环氧树脂a2，使用作为双酚A型环氧树脂的一种的DIC株式会社制的850CRP。作为环氧树脂a3，使用作为萘型环氧树脂的一种的DIC株式会社制的HP-4032D。作为环氧树脂a4，使用作为氨基苯酚型环氧树脂的一种的三菱化学株式会社制的jer630。作为环氧树脂a5，使用作为环状脂肪族型环氧树脂的一种的新日铁住金化学株式会社制的ZX1658GS。
作为表中的(B)成分，使用固化剂b1～b5中的至少1种。作为固化剂b1，使用作为胺固化剂的日本化药株式会社制的KAYAHARDAA。作为固化剂b2，使用作为胺固化剂的ADEKA株式会社制的EH105L。作为固化剂b3，使用作为胺固化剂的Albermarle公司制的ETHACURE100。作为固化剂b4，使用作为酸酐固化剂的三菱化学株式会社制的YH307。作为固化剂b5，使用作为酚醛树脂固化剂的明和化成株式会社制的MEH-8005。
作为表中的(C)成分，使用ADMATECHS株式会社制的YA010C(平均粒径：10nm)、YA050C(平均粒径：50nm)及YC100C(平均粒径：100nm)中的任意一种。上述填料的平均粒径为中值粒径(D50)。另外，该平均粒径为利用场致放射型扫描电子显微镜(FE-SEM)测定的值。
作为表中的(D)成分，使用UBE-EXSYMO株式会社制的HIPRESICA0.2μm(平均粒径：0.2μm)、株式会社ADMATECHS制的SE-1050(平均粒径：0.3μm)、SE-2300(平均粒径：0.6μm)、SE-4050(平均粒径：1μm)及SE-6050(平均粒径：2μm)中的任意一种。上述平均粒径为中值粒径(D50)。另外，该平均粒径为利用激光衍射散射式粒度分布仪测定的值。
作为上述(D)成分的表面处理剂，使用表面处理剂f1～f3中的任意一种。作为表面处理剂f1，使用信越化学工业株式会社制的KBM403(3-环氧丙氧基丙基三甲氧基硅烷)。作为表面处理剂f2，使用信越化学工业株式会社制的KBM503(3-甲基丙烯酰氧基丙基三甲氧基硅烷)。作为表面处理剂f3，使用信越化学工业株式会社制的KBE9103(3-三乙氧基甲硅烷基-N-(1,3-二甲基丁叉)丙基胺、式(1)的化合物)。
作为表中的(E)成分，使用弹性体e1～e9中的至少1种。作为弹性体e1，使用作为丁二烯系弹性体的一种的KANEKA株式会社制MX137。作为弹性体e2，使用作为硅酮系弹性体的一种的KANEKA株式会社制MX965。作为弹性体e3，使用作为苯乙烯丁二烯系弹性体的一种的KANEKA株式会社制MX135。作为弹性体e4，使用作为丙烯酸共聚物的一种的ARKEMA株式会社制M52N。作为弹性体e5，使用作为丁二烯－丙烯腈－甲基丙烯酸2,3-环氧丙基酯－二乙烯基苯共聚物的一种的JSR株式会社制XER-81。作为弹性体e6，使用作为丁二烯－丙烯腈－甲基丙烯酸－二乙烯基苯共聚物的一种的JSR株式会社制XER-91。作为弹性体e7，使用作为氨基末端丁二烯－丙烯腈共聚物的一种的宇部兴产株式会社制ATBN。作为弹性体e8，使用作为羧基末端丁二烯－丙烯腈共聚物的一种的宇部兴产株式会社制CTBN。作为弹性体e9，使用作为硅酮系弹性体的一种的信越化学工业株式会社制KMP-605。
除了上述(A)～(E)成分外，作为固化促进剂，使用四国化成株式会社制的2P4MZ。
(2)评价
将实施例1～37及比较例1～9中使用的环氧树脂组合物作为试样，进行以下的评价。
(2-1)分散指数的评价
图2是例示半导体装置的剖面照片的图。该图为图1中“II”所示的区域(区域II)的剖面照片。在图1的区域II中包含流入由布线基板1、芯片基板5、铜柱8及焊料4所夹的空间后进行了固化的底部填充剂10的剖面。使用扫描型电子显微镜(SEM)等对该区域II进行拍摄。利用图像处理软件按照以下方式通过计算机对该拍摄图像进行分析。即，首先，由用户等指定该拍摄图像中底部填充剂10的区域。以所指定的该区域的亮度分布的中位数作为基准，进行二值化处理。在此，在二值化的图像中，白色的部分表示填料，黑色的部分表示除填料以外的树脂成分。接着，所指定的区域以铜柱8与焊料4的边界线L的延长线为界划分成铜柱8侧的区域Ra及焊料4侧的区域Rb两个区域。而且，基于铜柱8侧的区域Ra及焊料4侧的区域Rb的各图像，计算各个区域中的二氧化硅填料的占有率。分散指数利用下式来计算。
分散指数＝100×(区域Ra的占有率)/(区域Rb的占有率)
分散指数为100时表示填料均匀地分布于各区域。在分散指数小于100时，表示填料偏向于区域Rb。若分散指数小，则表示填料大幅偏向于区域Rb。若分散指数变大而接近100，则表示填料的分布接近更均匀的状态。在此，在分散指数为50以下时，将该试样的填料分布的均匀性判断为不良。予以说明，在图像处理中使用美国国立卫生研究所(NIH：NationalInstitutesofHealth)的ImageJ。
(2-2)粘度的评价
使用BROOKFIELD旋转粘度计，测定在50rpm、25℃下的上述环氧树脂组合物的粘度。
(2-3)TI(触变指数)值
在5rpm及50rpm下测定上述环氧树脂组合物的粘度。将所测定的5rpm下的粘度的值除以50rpm下的粘度的值所得的值设为TI值。
(2-4)注入性的评价
在110℃下向20μm的间隙(gap)中注入评价用试样。测定所注入的评价用试样从入口到达20mm的位置的时间。距离到达的时间越短，表示注入性越好。予以说明，表中的注入性一栏中“－”的记载是指评价用试样未到达20mm的位置(即为不良)。
(2-5)粘接强度的评价
在FR-4上浇灌(potting)约0.5mg评价用试样。在其上放置2mm见方的硅芯片，在室温放置5分钟。之后，使用鼓风干燥机，在150℃、120分钟的条件下使评价用试样固化。对如此得到的试验片，使用台式强度测定机(AIKHOENGINEERING株式会社制1605HTP)测定粘接强度。予以说明，将利用10次的测定得到的测定值的平均值设为检查值。
(3)评价结果
(3-1)关于弹性体量
表1示出实施例1～5、以及比较例1及2的环氧树脂组合物的组成、以及评价的结果。以下，在表中，环氧树脂组合物的组成以质量份(质量％)来表示。表1示出(E)成分的含量发生变化的例子。在不包含(C)成分及(E)成分中的任一者的比较例1中，分散指数为38。另一方面，在包含(C)成分及(E)成分的实施例1～5中，分散指数为50以上。若(E)成分的含量增加，则分散指数接近100。即，若(E)成分的含量增加，则填料分布的均匀性得到改善。但是，若(E)成分的含量达到8.3质量％(比较例2)，则在注入性试验中产生不良情况。
表1
(3-2)关于弹性体的种类
表2示出实施例3及6～13的环氧树脂组合物的组成、以及评价的结果。表2示出(E)成分的种类发生变化的例子。使用弹性体e1～e9中的任一者作为(E)成分，均使填料分布的均匀性得到改善。
表2
(3-3)关于小直径二氧化硅填料的量
表3示出实施例3及14～16、以及比较例3及4的环氧树脂组合物的组成、以及评价的结果。表3示出(C)成分的含量发生变化的例子。若(C)成分的含量为0.05质量％(比较例3)，则分散指数为44，填料分布的均匀性不良。若(C)成分的含量增加，则分散指数接近100，填料分布的均匀性得到改善。因此，(C)成分的含量优选为0.1质量％以上。但是，若(C)成分的含量达到11质量％，则粘度为132Pa·s。因此，从作为密封剂的适度的粘度的观点出发，(C)成分的含量优选为10质量％以下。
表3
(3-4)关于小直径二氧化硅填料的平均粒径
表4示出实施例3、17、18及比较例5的环氧树脂组合物的组成、以及评价的结果。表4示出(C)成分的平均粒径发生变化的例子。予以说明，在比较例5中，使用平均粒径0.2μm(即200nm)的(D)成分来代替(C)成分。在不包含(C)成分的情况(比较例5)下，分散指数产生不良。若包含(C)成分，则分散指数得到改善。此时，(C)成分的平均粒径越小，则分散指数越得到改善。即，(C)成分的平均粒径为10～100nm的范围时，分散指数得到改善。
表4
(3-5)关于大直径二氧化硅填料的平均粒径
表5示出实施例3、19、20及比较例6的环氧树脂组合物的组成、以及评价的结果。表5示出(D)成分的平均粒径发生变化的例子。(D)成分的平均粒径为0.2～2μm的范围时，在分散指数试验中未观测到不良。随着(D)成分的平均粒径的变小，分散指数得到改善。相反，粘度变差。(D)成分的平均粒径为0.2μm(比较例6)时，显示195Pa·s的高粘度。因此，从作为密封剂的适度的粘度的观点出发，(D)成分的平均粒径优选为0.3μm以上。
表5
(3-6)关于大直径二氧化硅填料的量
表6示出实施例3、21～24及比较例7～9的环氧树脂组合物的组成、以及评价的结果。表6示出(D)成分的含量发生变化的例子。(D)成分的含量为52～75质量％的范围时，分散指数得到改善。但是，若(D)成分的含量变多，则注入性变差。尤其是若(D)成分的含量为76质量％(比较例9)，则在注入性试验中观测到不良。因此，从作为密封剂的适度的注入性的观点出发，(D)成分的含量优选为75％以下。予以说明，在(C)成分的含量与(D)成分的含量的总量少于50.1质量％的情况(比较例7及8)下，确认到环氧树脂组合物的分散指数的值小于50。
表6
(3-7)关于大直径二氧化硅填料的表面处理
表7示出实施例3及25～27的环氧树脂组合物的组成、以及评价的结果。表7示出(D)成分的表面处理发生变化的例子。无论是否使用具有环氧基、甲基丙烯酰基及氨基中的任一者的硅烷偶联剂对(D)成分进行表面处理，在分散指数试验中均未产生不良。
表7
(3-8)关于固化剂的当量比
表8示出实施例3、28及29的环氧树脂组合物的组成、以及评价的结果。表8示出(B)成分相对于(A)成分的当量比发生变化的例子。(B)成分相对于(A)成分的环氧基1当量的当量比为0.5当量以上且1.8当量以下的范围时，在分散指数试验中未产生不良。
表8
(3-9)关于环氧树脂的种类
表9示出实施例3及30～33的环氧树脂组合物的组成、以及评价的结果。表9示出(A)成分的种类、及(A)成分与(B)成分的含有比发生变化的例子。即使(A)成分为环氧树脂a1～a5中的任一者，在分散指数试验中均未观测到不良。
表9
(3-10)关于固化剂的种类
表10示出实施例3及实施例34～37的环氧树脂组合物的组成、以及评价的结果。表10示出(B)成分的种类及(A)成分与(B)成分的含有比发生变化的例子。即使(B)成分为固化剂b1～b5中的任一者，在分散指数试验中均未产生不良。
表10
进而，本发明的环氧树脂组合物可以为以下的第1～8的环氧树脂组合物。
关于上述第1的环氧树脂组合物，其特性在于，其具有(A)环氧树脂、(B)固化剂、(C)0.1～10质量％的平均粒径为10nm以上且100nm以下的二氧化硅填料、(D)47～75质量％的平均粒径为0.3μm以上且2μm以下的二氧化硅填料和(E)0.1～8质量％的弹性体，且该环氧树脂组合物包含合计47.1～77质量％的上述(C)成分及上述(D)成分。
关于上述第2的环氧树脂组合物，其特征在于，是在上述第1的环氧树脂组合物中，上述(C)成分及上述(D)成分中的至少一方被硅烷偶联剂进行过表面处理。
关于上述第3的环氧树脂组合物，其特征在于，是在上述第1或2的环氧树脂组合物中，上述(D)成分被下式(1)所示结构的氨基硅烷进行过表面处理。
[化3]
关于上述第4的环氧树脂组合物，其特征在于，是在上述第1～3中的任一环氧树脂组合物中，其包含相对于上述(A)成分的环氧基1当量为0.5～1.8当量的上述(B)成分。
关于上述第5环的氧树脂组合物，其特征在于，是在上述第1～4中的任一环氧树脂组合物中，上述(B)成分为酸酐固化剂、酚醛树脂固化剂或胺固化剂。
关于上述第6的环氧树脂组合物，其特征在于，是在上述第1～5中的任一环氧树脂组合物中，上述(A)成分包含双酚F型环氧树脂、双酚A型环氧树脂、萘型环氧树脂、氨基苯酚型环氧树脂中的至少一种。
关于上述第7的环氧树脂组合物，其特征在于，是在上述第1～6中的任一环氧树脂组合物中，上述(E)成分包含丁二烯系弹性体、硅酮系弹性体、丙烯酸共聚物、苯乙烯丁二烯系弹性体、丁二烯－丙烯腈－2,3-环氧丙基酯－甲基丙烯酸酯－二乙烯基苯共聚物、丁二烯－丙烯腈－甲基丙烯酸－二乙烯基苯共聚物、氨基末端丁二烯－丙烯腈共聚物、羧基末端丁二烯－丙烯腈共聚物中的至少一种。
关于上述第8环氧树脂组合物，其特征在于，是在上述第1～7中的任一环氧树脂组合物中，其通过对上述(A)环氧树脂的至少一部分混合上述(C)平均粒径为10～100nm的二氧化硅填料而生成母料并在该母料中混合其他成分来制造。
进而，本发明的半导体密封剂可以为以下的第1～4的半导体密封剂。
关于上述第1的半导体密封剂，其使用了上述第1～8中的任一环氧树脂组合物。
关于上述第2的半导体密封剂，其特征在于，是在上述第1的半导体密封剂中，所密封的上述半导体装置的导通部分为2种以上的金属或合金。
关于上述第3的半导体密封剂，其特征在于，是在上述第2的半导体密封剂中，所密封的上述半导体装置的导通部分由从Au、Ag、Cu、Sn、Pb、Ni、Pd、Co、Cd、Bi、In、Sb、Zn中选择的2种以上的金属或以该金属为基础的合金形成。
关于上述第4的半导体密封剂，其特征在于，是在上述第1的半导体密封剂中，所密封的上述半导体装置的导通部分为2种金属或合金，将密封了上述导通部分的上述环氧树脂组合物的剖面沿着上述2种金属或合金的边界划分成2个区域，对应该各区域中的上述(C)成分及上述(D)成分的面积之比所计算出的填料分散指数为50以上且150以下。
进而，本发明的半导体装置，其使用了上述第1～4中的任一半导体密封剂。
符号说明
1…布线基板、10…底部填充剂、2…电极端子、3…绝缘膜、4…焊料、5…芯片基板、7…电极端子、8…铜柱、9…钝化物、L…边界线。

Claims (13)

1.一种环氧树脂组合物，其特征在于，其包含(A)环氧树脂、(B)固化剂、(C)0.1～10质量％的平均粒径为10nm以上且100nm以下的二氧化硅填料、(D)47～75质量％的平均粒径为0.3μm以上且2μm以下的二氧化硅填料和(E)0.1～8质量％的弹性体，
该环氧树脂组合物包含合计50.1～77质量％的所述(C)成分和所述(D)成分。
2.根据权利要求1所述的环氧树脂组合物，其特征在于，所述(C)成分及所述(D)成分中的至少一方被硅烷偶联剂进行过表面处理。
3.根据权利要求1或2所述的环氧树脂组合物，其特征在于，所述(D)成分被以下式(1)所示结构式来表示的氨基硅烷进行过表面处理，
[化1]
4.根据权利要求1或2所述的环氧树脂组合物，其特征在于，其包含相对于所述(A)成分的环氧基1当量为0.5当量以上且1.8当量以下的所述(B)成分。
5.根据权利要求1或2所述的环氧树脂组合物，其特征在于，所述(B)成分为酸酐固化剂、酚醛树脂固化剂或胺固化剂。
6.根据权利要求1或2所述的环氧树脂组合物，其特征在于，所述(A)成分包含双酚F型环氧树脂、双酚A型环氧树脂、萘型环氧树脂及氨基苯酚型环氧树脂中的至少一种。
7.根据权利要求1或2所述的环氧树脂组合物，其特征在于，所述(E)成分包含丁二烯系弹性体、硅酮系弹性体、丙烯酸共聚物、苯乙烯丁二烯系弹性体、丁二烯－丙烯腈－甲基丙烯酸2,3-环氧丙基酯－二乙烯基苯共聚物、丁二烯－丙烯腈－甲基丙烯酸－二乙烯基苯共聚物、氨基末端丁二烯－丙烯腈共聚物及羧基末端丁二烯－丙烯腈共聚物中的至少一种。
8.根据权利要求1或2所述的环氧树脂组合物，其特征在于，其通过对所述(A)成分的至少一部分混合所述(C)成分而生成母料、并在该母料中混合其他成分来制造。
9.一种半导体密封剂，其使用了权利要求1～8中任一项所述的环氧树脂组合物。
10.根据权利要求9所述的半导体密封剂，其特征在于，其对利用2种以上的金属或合金形成的半导体装置的导通部分进行密封。
11.根据权利要求10所述的半导体密封剂，其特征在于，所述2种以上的金属或合金为从Au、Ag、Cu、Sn、Pb、Ni、Pd、Co、Cd、Bi、In、Sb及Zn中选择的2种以上的金属或以该金属为基础的合金。
12.根据权利要求10所述的半导体密封剂，其特征在于，所密封的所述半导体装置的导通部分为2种金属或合金，
将密封了所述导通部分的所述环氧树脂组合物的剖面基于所述2种金属或合金之间的边界划分成2个区域，使用该各区域中的所述(C)成分及所述(D)成分的占有率且利用下式计算出的填料分散指数为50以上且150以下，
填料分散指数＝100×(区域Ra的占有率)/(区域Rb的占有率)。
13.一种半导体装置，其使用了权利要求9～12中任一项所述的半导体密封剂。
CN201480058369.6A 2013-11-29 2014-11-28 环氧树脂组合物、半导体密封剂及半导体装置 Active CN105658727B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013247567 2013-11-29
JP2013-247567 2013-11-29
PCT/JP2014/005967 WO2015079708A1 (ja) 2013-11-29 2014-11-28 エポキシ樹脂組成物、半導体封止剤および半導体装置

Publications (2)

Publication Number Publication Date
CN105658727A true CN105658727A (zh) 2016-06-08
CN105658727B CN105658727B (zh) 2017-09-12

Family

ID=53198670

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480058369.6A Active CN105658727B (zh) 2013-11-29 2014-11-28 环氧树脂组合物、半导体密封剂及半导体装置

Country Status (7)

Country Link
US (1) US10196513B2 (zh)
JP (1) JP6475168B2 (zh)
KR (1) KR102197928B1 (zh)
CN (1) CN105658727B (zh)
MY (1) MY185884A (zh)
TW (1) TWI673318B (zh)
WO (1) WO2015079708A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109476924A (zh) * 2016-07-20 2019-03-15 日立化成株式会社 热固化性树脂组合物、层间绝缘用树脂膜、复合膜、印刷线路板及其制造方法
CN112251108A (zh) * 2020-10-26 2021-01-22 衡阳拓创聚合新材料有限公司 一种无溶剂硅改性弹性环氧弹性地坪涂料

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017066174A (ja) * 2015-09-28 2017-04-06 日東電工株式会社 熱硬化性組成物およびシート・装置の製造方法
WO2017122952A1 (ko) 2016-01-13 2017-07-20 주식회사 엘지화학 반도체 패키지용 열경화성 수지 조성물과 이를 이용한 프리프레그
KR102416920B1 (ko) * 2016-03-15 2022-07-06 나이키 이노베이트 씨.브이. 발포체 조성물 및 그 용도
JP6801279B2 (ja) * 2016-07-20 2020-12-16 昭和電工マテリアルズ株式会社 熱硬化性樹脂組成物、層間絶縁用樹脂フィルム、複合フィルム、プリント配線板及びその製造方法
JP6801280B2 (ja) * 2016-07-20 2020-12-16 昭和電工マテリアルズ株式会社 熱硬化性樹脂組成物、層間絶縁用樹脂フィルム、複合フィルム、プリント配線板及びその製造方法
KR20190069464A (ko) 2016-10-14 2019-06-19 히타치가세이가부시끼가이샤 밀봉용 수지 조성물, 전자 부품 장치 및 전자 부품 장치의 제조 방법
KR102196881B1 (ko) 2017-12-11 2020-12-30 주식회사 엘지화학 금속 박막 코팅용 열경화성 수지 조성물 및 이를 이용한 금속 적층체
KR102187162B1 (ko) 2017-12-14 2020-12-04 주식회사 엘지화학 금속 박막 코팅용 열경화성 수지 조성물 및 이를 이용한 금속 적층체
JP7404620B2 (ja) * 2018-10-25 2023-12-26 株式会社レゾナック 液状樹脂組成物並びに電子部品装置及びその製造方法
KR102283055B1 (ko) * 2019-11-13 2021-07-28 주식회사 테라온 에폭시 복합 조성물 및 이를 포함하는 반도체 패키지
WO2023276814A1 (ja) * 2021-06-29 2023-01-05 ナミックス株式会社 エポキシ樹脂組成物、半導体装置および半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011006618A (ja) * 2009-06-26 2011-01-13 Namics Corp 封止用液状樹脂組成物、フリップチップ実装体およびその製造方法
CN102604326A (zh) * 2011-01-17 2012-07-25 信越化学工业株式会社 半导体封装液体环氧树脂组合物和半导体器件
JP2012211269A (ja) * 2011-03-31 2012-11-01 Sekisui Chem Co Ltd 予備硬化物、粗化予備硬化物及び積層体

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000007890A (ja) * 1998-04-23 2000-01-11 Nitto Denko Corp 半導体封止用エポキシ樹脂組成物およびその製法ならびに半導体装置
JP2004256644A (ja) * 2003-02-25 2004-09-16 Matsushita Electric Works Ltd 封止用エポキシ樹脂組成物及び半導体装置
US8586467B2 (en) 2009-03-12 2013-11-19 Namics Corporation Method of mounting electronic component and mounting substrate
JP6286959B2 (ja) 2013-09-13 2018-03-07 日立化成株式会社 エポキシ樹脂組成物、電子部品装置及び電子部品装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011006618A (ja) * 2009-06-26 2011-01-13 Namics Corp 封止用液状樹脂組成物、フリップチップ実装体およびその製造方法
CN102604326A (zh) * 2011-01-17 2012-07-25 信越化学工业株式会社 半导体封装液体环氧树脂组合物和半导体器件
JP2012211269A (ja) * 2011-03-31 2012-11-01 Sekisui Chem Co Ltd 予備硬化物、粗化予備硬化物及び積層体

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109476924A (zh) * 2016-07-20 2019-03-15 日立化成株式会社 热固化性树脂组合物、层间绝缘用树脂膜、复合膜、印刷线路板及其制造方法
CN109476924B (zh) * 2016-07-20 2022-02-18 昭和电工材料株式会社 热固化性树脂组合物、层间绝缘用树脂膜、复合膜、印刷线路板及其制造方法
US11827789B2 (en) 2016-07-20 2023-11-28 Resonac Corporation Thermosetting resin composition, interlayer insulation resin film, composite film, printed wiring board, and production method thereof
CN112251108A (zh) * 2020-10-26 2021-01-22 衡阳拓创聚合新材料有限公司 一种无溶剂硅改性弹性环氧弹性地坪涂料

Also Published As

Publication number Publication date
JP6475168B2 (ja) 2019-02-27
TW201527410A (zh) 2015-07-16
US10196513B2 (en) 2019-02-05
KR20160091887A (ko) 2016-08-03
US20170022356A1 (en) 2017-01-26
TWI673318B (zh) 2019-10-01
CN105658727B (zh) 2017-09-12
MY185884A (en) 2021-06-14
JPWO2015079708A1 (ja) 2017-03-16
KR102197928B1 (ko) 2021-01-04
WO2015079708A1 (ja) 2015-06-04

Similar Documents

Publication Publication Date Title
CN105658727A (zh) 环氧树脂组合物、半导体密封剂及半导体装置
CN105637031B (zh) 环氧树脂组合物、半导体密封剂和半导体装置
TWI667267B (zh) 液狀封裝材、及使用其之電子元件
JP5256185B2 (ja) エポキシ樹脂組成物及び半導体装置
JP5579764B2 (ja) アンダーフィル用液状エポキシ樹脂組成物、及び該組成物で封止された半導体装置
JP5101860B2 (ja) エポキシ樹脂組成物と半導体装置
KR102244206B1 (ko) 에폭시 수지 조성물 및 전자 장치
JP3818267B2 (ja) アンダーフィル用樹脂組成物及び半導体装置
TWI612096B (zh) 液狀樹脂組成物、覆晶安裝體及其製造方法
JP5105099B2 (ja) 半導体封止用液状エポキシ樹脂組成物、及びそれをアンダーフィル材として用いて封止したフリップチップ型半導体装置
JP5319082B2 (ja) 封止用の液状エポキシ樹脂組成物と封止半導体装置
JP2013082782A (ja) 液状エポキシ樹脂組成物の選択方法及び製造方法、並びに電子部品装置及びその製造方法
JP6332488B2 (ja) 液状エポキシ樹脂組成物の選択方法及び製造方法、並びに電子部品装置及びその製造方法
TWI664230B (zh) 液狀環氧樹脂組成物
JP6405209B2 (ja) 銅バンプ用液状封止材、および、それに用いる樹脂組成物
JP5723665B2 (ja) 先供給型液状半導体封止樹脂組成物
JP2024064082A (ja) エポキシ樹脂組成物、半導体装置および半導体装置の製造方法
JP5664855B2 (ja) エポキシ樹脂組成物
JP2018172549A (ja) アンダーフィル用樹脂組成物、電子部品装置及びその製造方法
JP2018172550A (ja) アンダーフィル用樹脂組成物、電子部品装置及びその製造方法
JP2007254543A (ja) 一液型エポキシ樹脂組成物
JP2015232146A (ja) 液状エポキシ樹脂組成物の選択方法及び製造方法、並びに電子部品装置及びその製造方法
JP2009256483A (ja) エポキシ樹脂組成物、アンダーフィル材及びそれを使用した電子装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant