CN105632949B - 基板适配器生产方法、基板适配器和半导体元件接触方法 - Google Patents

基板适配器生产方法、基板适配器和半导体元件接触方法 Download PDF

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CN105632949B
CN105632949B CN201510824966.1A CN201510824966A CN105632949B CN 105632949 B CN105632949 B CN 105632949B CN 201510824966 A CN201510824966 A CN 201510824966A CN 105632949 B CN105632949 B CN 105632949B
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hardware
contact material
boundary face
substrate adapter
substrate
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CN105632949A (zh
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马丁·布雷夫斯
安德列亚斯·欣里希
安德列亚斯·克莱因
迈克尔·舍费尔
伊利萨·克里尔
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Heraeus Deutschland GmbH and Co KG
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Heraeus Materials Technology GmbH and Co KG
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Abstract

本发明涉及基板适配器生产方法、基板适配器和半导体元件接触方法。一种用于生产基板适配器(50)的方法，该基板适配器(50)特别用于接触半导体元件(26)，该方法包括以下步骤：‑使导电的金属元件(15)结构化；‑至少在一些区段用电绝缘材料(10)特别是塑料封装结构化的金属元件(15)；和‑将接触材料(13)应用到金属元件(15)的第一侧(17)上。

Description

基板适配器生产方法、基板适配器和半导体元件接触方法
技术领域
本发明涉及一种生产基板适配器的方法，该基板适配器特别用来接触半导体元件。另外，本发明涉及一种基板适配器和用于接触基板适配器用于其中的半导体元件，特别是功率器件的方法。
背景技术
对电力电子模块的日益增加的要求，例如与其导电性和使用寿命相关的要求，需要使用铜结合线，以便使功率半导体彼此接触或接触电力电子模块内的其他终端。目前使用的芯片金属化的主要方法是铝涂层或铝金属化，这可能会导致接触过程中和随后的器件使用中的问题。例如，这种金属化的方法可导致在操作中模块随后的故障。
存在不同的方法来增加系统的使用寿命，如使用所谓的柔性电路板。然而，这种柔性电路板还涉及缺点，由于这些柔性电路板不能用常规的线接合工艺接触，使得现有的生产能力不能再使用。
发明内容
本发明的目的是提供一种改进的解决方案，特别是关于生产的半导体装置的可靠性，半导体装置特别是功率半导体器件。另外，详细说明了产生改进的方法，特别是关于下游拾取和放置技术。
根据本发明，关于生产特别用于接触半导体元件的基板适配器的方法，该目的是通过具有下面限定的特征的方法来实现的，关于基板适配器，是通过下面限定的主题来实现的，关于用于通过根据本发明的基板适配器来接触半导体元件，特别是功率器件的方法，是通过具有下面限定的特征的方法来实现的。
根据本发明的用于生产基板适配器的方法的有利且方便的配置、或者根据本发明的用于接触半导体元件的方法的和根据本发明的基板适配器的有利且方便的配置，在下面限定的内容中具体说明。
根据本发明的用于生产基板适配器的方法，该基板适配器特别用于接触半导体元件，该方法包括以下步骤：
-使导电的金属元件结构化，
-至少在一些区段用电绝缘材料特别是塑料来封装结构化的金属元件，和
-将接触材料应用到金属元件的第一侧。
导电的金属元件的结构化涉及将结构并入导电的金属元件中，其中该结构可以合并在导电的金属元件的一个侧上和多于一个侧上。例如，关于要实现的基板适配器的形状或要实现的接触材料的形状，进行导电的金属元件的结构化。例如，可能的是，将相同或相应的形状并入导电的金属元件，使得它们彼此间隔开。
导电的金属元件可以是金属箔，特别是铜箔。金属元件也可以由铜合金形成。在这一点上，可以设想的是使用CuNi、CuSn、CuFe、CuNiSz、CuAg、CuW或CuMo。还有可能的是金属元件包含纯银。
可选地提供了，结构化的金属元件的第一侧涂覆有第一涂层系统和/或结构化的金属元件的第二侧涂敷有第二涂层系统。具有第一和/或第二涂层系统的金属元件的第一和/或第二侧的可选涂层可以例如通过电镀进行。涂层或者第一和/或第二涂层系统，优选地分别是不同的金属，特别是镍、银和/或金。
在根据本发明的方法中，结构化的金属元件至少在一些区段用电绝缘材料，特别是塑料来封装。则根据本发明的方法的特征在于以下事实：首先，由于用电绝缘材料封装，金属元件的电绝缘在生产过程中得到改善，并进而提供了更好的稳定的中间体和/或最终产品。
在根据本发明的方法中，结构化的金属元件可连接到基板和接触材料或者与基板和接触材料连接在一起。
为了进一步处理，对设置有接触材料的结构化的金属元件的细分可以以这样的方式进行，使得基板将细分的金属元件固定成彼此间隔一定距离。因此，设置有接触材料的多个细分的金属元件位于基板上，其中金属元件相邻地布置在基板上，其中基板上细分的金属元件彼此的间隔被保持。基板具有将细分的金属元件保持在适当的位置的作用。
在本发明的延伸中，建议的是，优选地在设置有接触材料的结构化的金属元件细分之前，将保护箔片应用到结构化的金属元件的第二侧。通过保护箔片，结构化的金属元件的第二侧可免遭电接触和/或污染和/或损坏。
结构化的金属元件至少在一些区段用电绝缘材料的封装可通过传递模塑，特别是膜辅助成型或热压缩成型，或者通过注塑成型，特别是微成型来实现。取决于所选择的成型方法，可以使用各种不同的材料。在注塑成型的情况下，可以使用热塑性材料如PPE或PEEK。在传递模塑的情况下，优选地使用热固性塑料。还可以设想的是，成型材料包含填充材料，例如玻璃纤维元件。
在封装结构化的金属元件时，金属元件的侧面的至少一些区段被电绝缘材料覆盖，其中形成电绝缘材料的框架。金属元件的侧面是形成结构化的金属元件的厚度的面。换言之，结构化的金属元件的侧面是形成金属箔片的厚度或高度的面。结构化的金属元件的侧面也可以指定为边缘面。
由于具有以这样的方式形成的框架，结构化的金属元件被设计成防腐蚀。另外，因为框架的击穿电压增大，形成了非常坚固的中间元件，该中间元件可以以有利的方式运输到现有的下游拾取和放置工序。
由电绝缘材料制成的框架可包括由电绝缘材料制成的位于结构化的金属元件的两个区段之间的至少一个分隔带。如果作为金属元件的结构化和随后的细分的一部分形成了栅极和发射极，分隔带可形成在结构化的金属元件的两个区段之间，即在栅极和发射极之间。分隔带应理解为框架的一个部分或一个区段。通过这样的分隔带，可以形成栅极和发射极之间的明确的分隔。
由电绝缘材料特别是塑料制成的框架的高度，可以等于金属元件的厚度。在框架的这种设计中，可能的是金属元件与框架齐平而终止。
作为本发明的一部分，还建议在金属元件的第一侧上，框架形成带有边界面的腔体，接触材料被引入到腔体中。这种腔体用作对要应用的接触材料的定位辅助。另外，框架的至少一些区段可以接合在金属元件的第一侧和/或第二侧的边缘后面。金属元件的第一和/或第二侧的边缘的这种接合提供了金属元件的附加的稳定。这样的一个结果是，金属元件的边缘和/或拐角区段，也可用塑料涂覆或封装。
根据本发明，还可以提供的是，边界面中的至少一个边界面的高度小于接触材料的厚度，或大于接触材料的厚度，或等于接触材料的厚度。如果接触材料的厚度等于边界面的高度，金属元件的第一侧上的接触材料与边界面齐平而终止，并因此与电绝缘材料的框架齐平而终止。如果边界面中的一个边界面的高度小于接触材料的厚度，金属元件的第一侧上的接触材料至少在一些区段中延伸超出框架或在其上面。如果较大的边界面中的至少一个边界面的高度大于接触材料的厚度，框架的至少一些区段位于接触材料上方，其效果是，例如，基板和/或基板箔片放置在框架上。
在本发明的另一实施方案中，框架的至少一个分隔带可以连接到边界面，其中该边界面的高度小于接触材料的厚度。
根据本发明，还可以提供的是边界面以这样的方式形成，使得其与金属元件的第一侧包括至少90°的角度，以形成要应用的接触材料的定位几何结构。
将接触材料应用到金属元件的第一侧可以包括以下步骤：
-特别是通过丝网印刷或模板印刷应用到基板的一侧上，
-将在一些区段被封装的金属元件和基板定位，使得金属元件的第一侧和接触材料被布置成彼此相对，和
-将结构化的金属元件连接到基板，并连接到位于基板上的接触材料。
这样的方法可以被认定为间接印刷。
接触材料可以例如通过丝网印刷或模板印刷直接应用到金属元件的第一侧上。接触材料的这样的应用优选将在框架的高度等于金属元件的厚度的这些情况下进行。
可以另外提供的是，接触材料通过使用刮板或者喷涂或喷射或分配到至少一个腔体中，被直接施加到金属元件的第一侧上。优选地，接触材料的这种类型的应用应选择在框架没有与金属元件齐平终止时，更确切地说在腔体形成时。可以提供的是，腔体完全被接触材料填充。还可以设想的是，腔体仅在相对于其高度或深度的一些区段被接触材料填充或回填。因此，根据本发明，还提出的是，当结构化的金属元件至少在一些区段中封装时，并入金属元件中的结构被绝缘材料回填和/或在一些区段中被回填。并入金属元件中的结构可以是，例如，凹部和/或沟槽和/或凹槽，借以该凹部、沟槽或凹槽完全被例如电绝缘材料填充。相对于凹部、凹槽或沟槽的高度用电绝缘材料回填区段，也是可以设想的。
接触材料可以是例如易烧结材料或烧结材料。接触材料可以是烧结糊状物和/或烧结箔片，其中烧结材料和/或烧结糊状物和/或烧结箔片可以包含，例如，银和/或银的化合物。还可以设想的是，接触材料是焊料和/或导电胶。
在第二个方面，本发明涉及一种基板适配器，其包括具有第一侧和第二侧的金属元件、施加到第一侧的接触材料和由电绝缘材料制成的外框架，该外框架覆盖金属元件的侧面的至少一些区段。
在本发明的延伸中，框架可以在结构化的金属元件的两个区段之间包括至少一个由电绝缘材料制成的分隔带。这种分隔带应主要被理解为位于栅极和发射极之间的界定间隔物，该栅极和发射极由金属元件的两个区段形成。这两个区段因此彼此电绝缘。
关于根据本发明的基板适配器，还提出的是，至少在一些区段处，框架在后面接合金属元件的第一侧和/或第二侧的边缘。这导致基板适配器的附加的加强，基板适配器被极其坚固地设计并因此可以通过拾取和放置技术运输。
具有边界面的腔体可以形成在金属元件的第一侧上，接触材料被引入该腔体中。还有可能的是，边界面中的至少一个面的高度小于接触材料的厚度，或大于接触材料的厚度，或等于接触材料的厚度。得到类似的优点，如结合根据本发明的方法已经进行的说明。
至少一个分隔带可以连接到腔体的边界面，其中边界面的高度小于接触材料的厚度。
还有可能的是，边界面与金属元件的第一侧包括至少90度的角度，以形成定位几何结构。该定位几何结构对于要应用的接触材料是有利的。此外，基板适配器的定位几何结构可用于相对于接触材料或金属元件定位半导体。
由电绝缘材料构成的框架和腔体形成一种三维模板，用于施加接触材料。金属元件可以由铜或铜合金形成。在这一点上，可以设想的是使用CuNi、CuSn、CuFe、CuNiSz、CuAg、CuW或CuMo。还有可能的是，金属元件由纯银制成。
本发明的进一步的第二方面涉及一种用于通过根据本发明的基板适配器接触半导体元件，特别是功率器件的方法。根据本发明的接触方法包括以下步骤：
-从基板分离细分的基板适配器，该基板适配器包括具有连接到其的接触材料的金属元件和由电绝缘材料制成的框架，
-将基板适配器以这样的方式定位在半导体元件上，使得接触材料和半导体元件面对彼此，
-通过施加热和/或压力将基板适配器附接到半导体元件，和
-将可选地被涂覆的金属元件的第二侧与接触元件，特别是结合线和/或结合带和/或线夹接触。
结合线和/或结合带和/或线夹可以由纯铜或铜合金制成。在这一点上，以下材料是可以设想的：CuNi、CuSn、CuFn、CuNiSz、CuAg、CuW或CuMo。还有可能的是，用纯银制作生产金属元件。
在根据本发明的用于接触半导体元件的方法的另一实施方案中，进行了另一个步骤，特别是用接触元件接触金属元件的第二侧之前，涉及去除保护箔片并暴露金属元件的第二侧。此外，根据本发明的接触方法可以包括将基板适配器烧结和/或焊接和/或粘接到半导体元件和/或到包括半导体元件的基板的方法步骤。
通过根据本发明的用于生产基板适配器的方法并且用根据本发明的基板适配器，提供了一种基板适配器，其连同接触材料可被提供给客户和/或供应到生产线。基板适配器可以提供在膜框架上。以这样的运送形式，可以以下面的过程或方法步骤直接从膜框架去除基板适配器，并放在半导体元件，特别是功率器件上。这相当于拾取和放置技术，即基板适配器使用机器人或夹紧装置或抽吸装置从膜框架分离，并可以输送到相应的半导体元件。
由于根据本发明的结构化的金属元件至少在一些区段中的封装，在栅极和发射极之间设置了一种改进的机械连接，使得这一过程可由更刚性的部件来执行。
附图说明
本发明在示例性实施方案的帮助下并参考附图在下面进行详细描述。
这些附图示出：
图1a、1b 在剖视图和从下面看的视图中的至少在一些区段用塑料封装的金属元件，
图2 用根据本发明的基板适配器接触的半导体元件，
图3 根据本发明的基板适配器的又一实施方案，和
图4 根据本发明的基板适配器的又一实施方案。
附图标记列表
10 电绝缘材料
13 接触材料
14 接触材料的结构
15 金属元件
16 金属元件的结构
17 金属元件的第一侧
19'、19” 金属元件的区段
20 金属元件的第二侧
24 分隔点
25 铜结合线
26 半导体元件
28 半导体元件
30 金属元件的侧面
31 框架
32 支撑元件
33 金属元件的周缘
34 金属元件的凹部
40 腔体
41、41' 边界面
45 分隔带
50 基板适配器
60 基板
d 金属元件的厚度
dKM 接触材料的厚度
H1、H2 边界面的高度
α 角度
具体实施方式
在下文中，相同的附图标记用于相同的或功能相当的部件。
图1a和1b示出了金属元件15，即铜箔片，其已经被结构化。为了实现这一目标，分隔点24被并入金属元件15的第一侧17上，其中分隔点24在整个厚度d上分隔金属元件15，使得在金属元件15的第一侧17上获得结构16。
可以提供的是，将涂层施加到金属元件15的第一侧17和金属元件15的第二侧20，其中第一涂层系统施加到第一侧17上，且第二涂层系统施加到第二侧20上。结构化的金属元件15的可选涂层因此优选地在金属元件15的结构化之后进行。金属元件15的第一侧17和第二侧20的涂层是例如通过电镀进行的。
第一涂层系统和第二涂层系统优选地是不同的金属，特别是如镍、银和/或金。
结构化的金属元件15至少在一些区段用电绝缘材料10，特别是塑料来封装。结构化的金属元件15至少在一些区段用电绝缘材料10封装，可以通过传递模塑工艺来进行，特别是膜辅助成型或热压缩成型，或者通过注塑成型工艺，特别是微成型。
当结构化的金属元件15被封装时，金属元件15的侧面至少在一些区段用电绝缘材料10覆盖，从而形成由电绝缘材料10制成的框架31。框架31包括由电绝缘材料10制成的至少一个分隔带45，其位于结构化的金属元件15的两个区段19'和19”之间。换言之，分隔带45填满分隔点24。结构化的金属元件15的区段19'和19”形式栅极和发射极。
所示的框架31在边缘33的整个范围内接合在金属元件15的第一侧17的边缘33后面。由于边缘33的总的包围，形成了框架31的完整的支撑元件32。该支撑元件32确保形成的基板适配器的附加的稳定。支撑元件32具有边界面41，其是腔体40的部分。在所示的两个腔体40中，已经应用接触材料13。
在所示的示例中的分隔带45高于金属元件的厚度d，使得分隔带45与边界面41也形成支撑元件32。在所示的横截面中的分隔带45是T形的。施加到金属元件15的第一侧17的接触材料13可以例如通过使用刮板、或者通过喷涂或喷射或分配应用到腔体40中。在刮板加工的情况下，框架31作为要应用到金属元件15的第一侧17的接触材料13的模板或隔板。接触材料13是，例如，银基或银合金基的烧结糊状物。在应用条件下的接触材料13具有结构14，其中结构14对应于金属元件15的结构16。
图1a示出了处于已经组装的状态、连接到接触材料13的封装的金属元件15。此外，结构化的金属元件15可随后连接到基板。虚线元件表示多个基板适配器可以在单一的步骤中形成，该基板适配器包括金属元件15、外框架31和接触材料13。垂直的虚线表示结构化的金属元件15沿着其设置有接触材料13的区段可以被细分，以便进一步处理，其中细分的金属元件15例如彼此间隔一定距离地固定在基板上。细分可以通过锯割和/或激光切割和/或穿孔和/或蚀刻和/或水射流切割来进行。
如图2所示，金属元件15的第二侧可以与接触元件25，即铜结合线接触。基板适配器50通过标准组装和连接工艺被例如烧结到基板60的半导体元件26。
图3示出了可能的基板适配器50的另一个实施方案。该基板适配器50包括具有两个区段19'和19”的金属元件15。金属元件15具有第一侧17和第二侧20，其中接触材料13被应用到第一侧17。还示出的是由电绝缘材料10制成的外框架31，其覆盖金属元件15的侧面30。侧面30与金属元件15的第一侧17和第二侧20是正交的或垂直的。侧面30确定金属元件15的厚度d。另外，框架31包括由电绝缘材料10制成的分隔带45。框架31接合在第一侧17的边缘33后面。在金属元件15的第一侧17上，形成具有边界面41、41'的两个腔体40，接触材料13被引入腔体40中。
分隔带45连接到边界面41'，边界面41'的高度H1小于接触材料13的厚度dKM。这适用于两个边界面41'，每个边界面41'形成分隔腔体40的部分。
边界面41的高度H2大于接触材料13的厚度dKM。因此，分隔带45的高度小于框架31的接合在金属元件15的侧面30后面的区段的高度。
边界面41、41'与金属元件15的第一侧17围成具有大于90°的值的角度α，使得用于要引入的接触材料13的定位几何结构被形成。图3示出了连接到接触材料13的半导体元件28。框架31相对于半导体元件28也可以是定位辅助。
图4示出了关于根据本发明的基板适配器50的另一实施方案的截面。金属元件15还包括两个区段19'、19”。示出的分隔带45具有H形的横截面。因此，框架31的分隔带45(不再示出)是引入金属元件15内的结构的反面(negative)。根据图4，金属元件15的结构具有凹部34。凹部34完全被框架31的电绝缘材料10或框架的分隔带45封装。框架31的高度或分别与框架相关联的分隔带45的高度等于金属元件15的厚度d。
接触材料13被应用在金属元件15的第一侧17上。在本实施方案中的接触材料13可以例如通过丝网印刷或模板印刷，或通过间接印刷，应用在金属元件15的第一侧17上。
在这点上，应该注意的是，关于图1a、1b和图2-4所示的实施方案的上述所有方法步骤和元件，特别是附图所示的细节，无论自身单独地或以任何组合，都声称是本发明必需的。

Claims (17)

1.一种用于生产基板适配器(50)的方法，所述方法包括以下步骤：
-使导电的金属元件(15)结构化，
-至少在一些区段用电绝缘材料(10)来封装结构化的金属元件(15)，
-将接触材料(13)应用到所述金属元件(15)的第一侧(17)，和
-将结构化的金属元件(15)连接到基板，并连接到所述接触材料(13)，
其中所述接触材料是烧结糊状物和/或烧结箔片和/或焊料和/或导电胶，
其特征在于，
在封装结构化的金属元件(15)时，所述金属元件(15)的侧面(30)至少在一些区段被电绝缘材料(10)覆盖，并且形成由电绝缘材料(10)制成的框架(31)，
在所述金属元件(15)的所述第一侧(17)上，所述框架(31)形成具有边界面(41、41′)的腔体(40)，所述接触材料(13)被引入所述腔体(40)中。
2.根据权利要求1所述的方法，其特征在于，
对设置有接触材料(13)的结构化的金属元件(15)进行细分以进一步处理，使得所述基板将所细分的金属元件(15)固定成彼此间隔一定距离。
3.根据权利要求1或2所述的方法，其特征在于，
结构化的金属元件(15)至少在一些区段用电绝缘材料(10)的封装能够通过传递模塑或者通过注塑成型来实现。
4.根据权利要求1或2所述的方法，其特征在于，
所述边界面(41、41′)中的至少一个边界面的高度(H1)小于所述接触材料(13)的厚度(dKM)，或所述边界面(41、41′)中的至少一个其它的边界面的高度(H2)大于所述接触材料(13)的厚度(dKM)，或等于所述接触材料(13)的厚度(dKM)。
5.根据权利要求1或2所述的方法，其特征在于，
所述边界面(41、41')被形成，使得所述边界面(41、41')与所述金属元件(15)的所述第一侧(17)围成至少90°的角度(α)，以形成要引入的所述接触材料(13)的定位几何结构。
6.根据权利要求1或2所述的方法，其特征在于，
所述接触材料(13)通过刮板或者喷涂或分配到所述腔体(40)中，被直接施加到所述金属元件(15)的所述第一侧(17)上。
7.根据权利要求1所述的方法，其特征在于，
所述基板适配器(50)用于接触半导体元件(26)。
8.根据权利要求1所述的方法，其特征在于，
所述电绝缘材料(10)是塑料。
9.根据权利要求1或2所述的方法，其特征在于，
结构化的金属元件(15)至少在一些区段用电绝缘材料(10)的封装能够通过膜辅助成型或热压缩成型或者通过微成型来实现。
10.一种基板适配器(50)，包括具有第一侧(17)和第二侧(20)的金属元件(15)、施加到所述第一侧(17)的接触材料(13)和由电绝缘材料(10)制成的外框架(31)，所述外框架(31)至少在一些区段覆盖所述金属元件(15)的侧面(30)，所述金属元件(15)被配置成连接到基板，并连接到所述接触材料(13)，
其中所述接触材料是烧结糊状物和/或烧结箔片和/或焊料和/或导电胶，其中在所述金属元件(15)的所述第一侧(17)上，形成了具有边界面(41、41')的腔体(40)，所述接触材料(13)被引入所述腔体(40)中，
其中所述外框架(31)包括由电绝缘材料(10)制成的位于所述金属元件(15)的两个区段(19'、19”)之间的至少一个分隔带(45)，并且
其中所述至少一个分隔带(45)连接到所述边界面(41、41')中的一个边界面(41')，其中该一个边界面(41')的高度(H1)小于所述接触材料(13)的厚度(dKM)。
11.根据权利要求10所述的基板适配器(50)，其特征在于，
所述外框架(31)至少在一些区段接合在所述金属元件(15)的所述第一侧(17)和/或所述第二侧(20)的边缘(33)后面。
12.根据权利要求10所述的基板适配器(50)，其特征在于，
所述边界面(41、41')中的至少一个其它的边界面的高度(H2)大于所述接触材料(13)的厚度(dKM)，或等于所述接触材料(13)的厚度(dKM)。
13.根据权利要求10所述的基板适配器(50)，其特征在于，
所述边界面(41、41')与所述金属元件(15)的所述第一侧(17)围成至少90度的角度(α)，以形成定位几何结构。
14.一种用于通过根据权利要求10-13中任一项所述的基板适配器(50)接触半导体元件(26)的方法，包括以下步骤：
-从基板分离细分的基板适配器(50)，细分的基板适配器(50)包括金属元件(15)和由电绝缘材料制成的框架(31)，所述金属元件(15)具有连接到其的接触材料(13)，
-将所述基板适配器(50)以使得所述接触材料(13)和所述半导体元件(26)面对彼此的方式定位在所述半导体元件(26)上，
-通过施加热和/或压力将所述基板适配器(50)附接到所述半导体元件(26)，和
-将所述金属元件(15)的所述第二侧(20)与接触元件接触。
15.根据权利要求14所述的方法，其特征在于，
所述半导体元件(26)是功率器件。
16.根据权利要求14所述的方法，其特征在于，
所述金属元件(15)被涂覆。
17.根据权利要求14所述的方法，其特征在于，
所述接触元件是结合线(25)和/或结合带和/或线夹。
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