CN105593331B - 研磨用组合物 - Google Patents

研磨用组合物 Download PDF

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Publication number
CN105593331B
CN105593331B CN201480054190.3A CN201480054190A CN105593331B CN 105593331 B CN105593331 B CN 105593331B CN 201480054190 A CN201480054190 A CN 201480054190A CN 105593331 B CN105593331 B CN 105593331B
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CN
China
Prior art keywords
composition
polishing
acid
abrasive grain
grinding
Prior art date
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Active
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CN201480054190.3A
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English (en)
Chinese (zh)
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CN105593331A (zh
Inventor
玉田修
玉田修一
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Fujimi Inc
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Fujimi Inc
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Publication of CN105593331A publication Critical patent/CN105593331A/zh
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Publication of CN105593331B publication Critical patent/CN105593331B/zh
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN201480054190.3A 2013-09-30 2014-09-02 研磨用组合物 Active CN105593331B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013-204170 2013-09-30
JP2013204170A JP6113619B2 (ja) 2013-09-30 2013-09-30 研磨用組成物
PCT/JP2014/073076 WO2015045757A1 (ja) 2013-09-30 2014-09-02 研磨用組成物

Publications (2)

Publication Number Publication Date
CN105593331A CN105593331A (zh) 2016-05-18
CN105593331B true CN105593331B (zh) 2019-02-22

Family

ID=52742904

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480054190.3A Active CN105593331B (zh) 2013-09-30 2014-09-02 研磨用组合物

Country Status (8)

Country Link
US (1) US20160215170A1 (enExample)
EP (1) EP3053979A4 (enExample)
JP (1) JP6113619B2 (enExample)
KR (1) KR102263486B1 (enExample)
CN (1) CN105593331B (enExample)
SG (1) SG11201601941SA (enExample)
TW (1) TWI638883B (enExample)
WO (1) WO2015045757A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015046603A1 (ja) * 2013-09-30 2015-04-02 Hoya株式会社 シリカ砥粒、シリカ砥粒の製造方法および磁気ディスク用ガラス基板の製造方法
CN108117839B (zh) * 2016-11-29 2021-09-17 安集微电子科技（上海）股份有限公司 一种具有高氮化硅选择性的化学机械抛光液
JP6811089B2 (ja) * 2016-12-26 2021-01-13 花王株式会社 シリコンウェーハ用研磨液組成物
EP3775076A4 (en) * 2018-03-28 2021-12-22 FUJIFILM Electronic Materials U.S.A, Inc. CHEMICAL-MECHANICAL POLISHING SUSPENSION WITH RUTHENIUM BARRIER
US10995238B2 (en) * 2018-07-03 2021-05-04 Rohm And Haas Electronic Materials Cmp Holdings Neutral to alkaline chemical mechanical polishing compositions and methods for tungsten
JP7219061B2 (ja) * 2018-11-14 2023-02-07 関東化学株式会社 ルテニウム除去用組成物
JP6756423B1 (ja) * 2019-02-21 2020-09-16 三菱ケミカル株式会社 シリカ粒子とその製造方法、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法
JP7638667B2 (ja) * 2019-11-20 2025-03-04 株式会社フジミインコーポレーテッド 研磨組成物、研磨方法および基板の製造方法
KR20220156623A (ko) * 2020-03-30 2022-11-25 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
TW202206647A (zh) * 2020-08-07 2022-02-16 日商德山股份有限公司 含次溴酸離子與ｐＨ緩衝劑之半導體晶圓處理液
JP7663331B2 (ja) * 2020-09-23 2025-04-16 株式会社フジミインコーポレーテッド 研磨用組成物
JP7766536B2 (ja) * 2022-03-29 2025-11-10 株式会社フジミインコーポレーテッド 研磨用組成物およびこれを用いた研磨方法
KR102693377B1 (ko) * 2023-07-28 2024-08-09 한양대학교 산학협력단 무취의 실리콘 게르마늄 식각액 조성물 및 이를 이용한 식각 방법

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000230170A (ja) * 1999-02-09 2000-08-22 Sharp Corp 貴金属の研磨のための化学的活性スラリーおよびその研磨方法
JP2001342456A (ja) * 2000-01-18 2001-12-14 Praxair St Technol Inc 研磨性スラリー
US6332831B1 (en) * 2000-04-06 2001-12-25 Fujimi America Inc. Polishing composition and method for producing a memory hard disk
JP2008264952A (ja) * 2007-04-23 2008-11-06 Shin Etsu Chem Co Ltd 多結晶シリコン基板の平面研磨加工方法
JP2010041029A (ja) * 2008-02-18 2010-02-18 Jsr Corp 化学機械研磨用水系分散体、化学機械研磨方法および化学機械研磨用水系分散体の製造方法
CN102017093A (zh) * 2008-03-05 2011-04-13 卡伯特微电子公司 使用水溶性氧化剂的碳化硅抛光方法

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Publication number Priority date Publication date Assignee Title
US4944836A (en) 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
JP2004172326A (ja) 2002-11-20 2004-06-17 Hitachi Ltd 研磨用スラリー及び半導体装置の製造方法
TWI363796B (en) * 2004-06-14 2012-05-11 Kao Corp Polishing composition
US20070037892A1 (en) * 2004-09-08 2007-02-15 Irina Belov Aqueous slurry containing metallate-modified silica particles
JP4759298B2 (ja) * 2005-03-30 2011-08-31 株式会社フジミインコーポレーテッド 単結晶表面用の研磨剤及び研磨方法
FR2912841B1 (fr) 2007-02-15 2009-05-22 Soitec Silicon On Insulator Procede de polissage d'heterostructures
SG184772A1 (en) * 2007-09-21 2012-10-30 Cabot Microelectronics Corp Polishing composition and method utilizing abrasive particles treated with an aminosilane
DE102008059044B4 (de) 2008-11-26 2013-08-22 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe mit einer verspannt-relaxierten Si1-xGex-Schicht
WO2010085324A1 (en) * 2009-01-20 2010-07-29 Cabot Corporation Compositons comprising silane modified metal oxides
SG176255A1 (en) * 2009-08-19 2012-01-30 Hitachi Chemical Co Ltd Polishing solution for cmp and polishing method
JP2013084876A (ja) * 2011-09-30 2013-05-09 Fujimi Inc 研磨用組成物

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000230170A (ja) * 1999-02-09 2000-08-22 Sharp Corp 貴金属の研磨のための化学的活性スラリーおよびその研磨方法
JP2001342456A (ja) * 2000-01-18 2001-12-14 Praxair St Technol Inc 研磨性スラリー
US6332831B1 (en) * 2000-04-06 2001-12-25 Fujimi America Inc. Polishing composition and method for producing a memory hard disk
JP2008264952A (ja) * 2007-04-23 2008-11-06 Shin Etsu Chem Co Ltd 多結晶シリコン基板の平面研磨加工方法
JP2010041029A (ja) * 2008-02-18 2010-02-18 Jsr Corp 化学機械研磨用水系分散体、化学機械研磨方法および化学機械研磨用水系分散体の製造方法
CN102017093A (zh) * 2008-03-05 2011-04-13 卡伯特微电子公司 使用水溶性氧化剂的碳化硅抛光方法

Also Published As

Publication number Publication date
KR102263486B1 (ko) 2021-06-11
WO2015045757A1 (ja) 2015-04-02
JP2015067752A (ja) 2015-04-13
CN105593331A (zh) 2016-05-18
SG11201601941SA (en) 2016-04-28
EP3053979A4 (en) 2016-11-09
KR20160063331A (ko) 2016-06-03
TWI638883B (zh) 2018-10-21
TW201518490A (zh) 2015-05-16
US20160215170A1 (en) 2016-07-28
EP3053979A1 (en) 2016-08-10
JP6113619B2 (ja) 2017-04-12

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