KR102263486B1 - 연마용 조성물 - Google Patents

연마용 조성물 Download PDF

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Publication number
KR102263486B1
KR102263486B1 KR1020167007748A KR20167007748A KR102263486B1 KR 102263486 B1 KR102263486 B1 KR 102263486B1 KR 1020167007748 A KR1020167007748 A KR 1020167007748A KR 20167007748 A KR20167007748 A KR 20167007748A KR 102263486 B1 KR102263486 B1 KR 102263486B1
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South Korea
Prior art keywords
group
polishing composition
polishing
acid
abrasive grains
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English (en)
Korean (ko)
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KR20160063331A (ko
Inventor
슈이치 다마다
Original Assignee
가부시키가이샤 후지미인코퍼레이티드
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Publication of KR20160063331A publication Critical patent/KR20160063331A/ko
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Publication of KR102263486B1 publication Critical patent/KR102263486B1/ko
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H01L21/30625—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020167007748A 2013-09-30 2014-09-02 연마용 조성물 Active KR102263486B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013204170A JP6113619B2 (ja) 2013-09-30 2013-09-30 研磨用組成物
JPJP-P-2013-204170 2013-09-30
PCT/JP2014/073076 WO2015045757A1 (ja) 2013-09-30 2014-09-02 研磨用組成物

Publications (2)

Publication Number Publication Date
KR20160063331A KR20160063331A (ko) 2016-06-03
KR102263486B1 true KR102263486B1 (ko) 2021-06-11

Family

ID=52742904

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167007748A Active KR102263486B1 (ko) 2013-09-30 2014-09-02 연마용 조성물

Country Status (8)

Country Link
US (1) US20160215170A1 (enExample)
EP (1) EP3053979A4 (enExample)
JP (1) JP6113619B2 (enExample)
KR (1) KR102263486B1 (enExample)
CN (1) CN105593331B (enExample)
SG (1) SG11201601941SA (enExample)
TW (1) TWI638883B (enExample)
WO (1) WO2015045757A1 (enExample)

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Publication number Priority date Publication date Assignee Title
MY176027A (en) * 2013-09-30 2020-07-22 Hoya Corp Silica abrasive particles, method for manufacturing silica abrasive particles, and method for manufacturing magnetic-disk glass substrate
CN108117839B (zh) * 2016-11-29 2021-09-17 安集微电子科技（上海）股份有限公司 一种具有高氮化硅选择性的化学机械抛光液
JP6811089B2 (ja) * 2016-12-26 2021-01-13 花王株式会社 シリコンウェーハ用研磨液組成物
US11034859B2 (en) * 2018-03-28 2021-06-15 Fujifilm Electronic Materials U.S.A., Inc. Barrier ruthenium chemical mechanical polishing slurry
US10995238B2 (en) * 2018-07-03 2021-05-04 Rohm And Haas Electronic Materials Cmp Holdings Neutral to alkaline chemical mechanical polishing compositions and methods for tungsten
JP7219061B2 (ja) * 2018-11-14 2023-02-07 関東化学株式会社 ルテニウム除去用組成物
WO2020171134A1 (ja) * 2019-02-21 2020-08-27 三菱ケミカル株式会社 シリカ粒子とその製造方法、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法
JP7638667B2 (ja) * 2019-11-20 2025-03-04 株式会社フジミインコーポレーテッド 研磨組成物、研磨方法および基板の製造方法
CN115380097B (zh) * 2020-03-30 2024-06-14 福吉米株式会社 研磨用组合物
CN116097405A (zh) * 2020-08-07 2023-05-09 株式会社德山 包含次溴酸离子和pH缓冲剂的半导体晶片的处理液
JP7663331B2 (ja) * 2020-09-23 2025-04-16 株式会社フジミインコーポレーテッド 研磨用組成物
JP7766536B2 (ja) * 2022-03-29 2025-11-10 株式会社フジミインコーポレーテッド 研磨用組成物およびこれを用いた研磨方法
KR102693377B1 (ko) * 2023-07-28 2024-08-09 한양대학교 산학협력단 무취의 실리콘 게르마늄 식각액 조성물 및 이를 이용한 식각 방법

Citations (2)

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US20090081927A1 (en) 2007-09-21 2009-03-26 Cabot Microelectronics Corporation Polishing composition and method utilizing abrasive particles treated with an aminosilane
JP2010041029A (ja) * 2008-02-18 2010-02-18 Jsr Corp 化学機械研磨用水系分散体、化学機械研磨方法および化学機械研磨用水系分散体の製造方法

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US4944836A (en) 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
US6290736B1 (en) * 1999-02-09 2001-09-18 Sharp Laboratories Of America, Inc. Chemically active slurry for the polishing of noble metals and method for same
US6299795B1 (en) * 2000-01-18 2001-10-09 Praxair S.T. Technology, Inc. Polishing slurry
US6332831B1 (en) * 2000-04-06 2001-12-25 Fujimi America Inc. Polishing composition and method for producing a memory hard disk
JP2004172326A (ja) 2002-11-20 2004-06-17 Hitachi Ltd 研磨用スラリー及び半導体装置の製造方法
GB2415199B (en) * 2004-06-14 2009-06-17 Kao Corp Polishing composition
US20070037892A1 (en) * 2004-09-08 2007-02-15 Irina Belov Aqueous slurry containing metallate-modified silica particles
JP4759298B2 (ja) * 2005-03-30 2011-08-31 株式会社フジミインコーポレーテッド 単結晶表面用の研磨剤及び研磨方法
US7998866B2 (en) * 2006-09-05 2011-08-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
US7678700B2 (en) 2006-09-05 2010-03-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
FR2912841B1 (fr) 2007-02-15 2009-05-22 Soitec Silicon On Insulator Procede de polissage d'heterostructures
JP2008264952A (ja) * 2007-04-23 2008-11-06 Shin Etsu Chem Co Ltd 多結晶シリコン基板の平面研磨加工方法
DE102008059044B4 (de) 2008-11-26 2013-08-22 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe mit einer verspannt-relaxierten Si1-xGex-Schicht
CN102361940B (zh) * 2009-01-20 2016-03-02 卡博特公司 包含硅烷改性金属氧化物的组合物
SG176255A1 (en) * 2009-08-19 2012-01-30 Hitachi Chemical Co Ltd Polishing solution for cmp and polishing method
JP2013084876A (ja) * 2011-09-30 2013-05-09 Fujimi Inc 研磨用組成物

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090081927A1 (en) 2007-09-21 2009-03-26 Cabot Microelectronics Corporation Polishing composition and method utilizing abrasive particles treated with an aminosilane
JP2010041029A (ja) * 2008-02-18 2010-02-18 Jsr Corp 化学機械研磨用水系分散体、化学機械研磨方法および化学機械研磨用水系分散体の製造方法

Also Published As

Publication number Publication date
JP6113619B2 (ja) 2017-04-12
JP2015067752A (ja) 2015-04-13
WO2015045757A1 (ja) 2015-04-02
SG11201601941SA (en) 2016-04-28
EP3053979A4 (en) 2016-11-09
CN105593331A (zh) 2016-05-18
EP3053979A1 (en) 2016-08-10
CN105593331B (zh) 2019-02-22
TW201518490A (zh) 2015-05-16
TWI638883B (zh) 2018-10-21
KR20160063331A (ko) 2016-06-03
US20160215170A1 (en) 2016-07-28

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