TWI638883B - Grinding composition - Google Patents

Grinding composition Download PDF

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Publication number
TWI638883B
TWI638883B TW103132069A TW103132069A TWI638883B TW I638883 B TWI638883 B TW I638883B TW 103132069 A TW103132069 A TW 103132069A TW 103132069 A TW103132069 A TW 103132069A TW I638883 B TWI638883 B TW I638883B
Authority
TW
Taiwan
Prior art keywords
polishing composition
polishing
acid
group
oxidizing agent
Prior art date
Application number
TW103132069A
Other languages
English (en)
Chinese (zh)
Other versions
TW201518490A (zh
Inventor
玉田修一
Original Assignee
福吉米股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 福吉米股份有限公司 filed Critical 福吉米股份有限公司
Publication of TW201518490A publication Critical patent/TW201518490A/zh
Application granted granted Critical
Publication of TWI638883B publication Critical patent/TWI638883B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW103132069A 2013-09-30 2014-09-17 Grinding composition TWI638883B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013204170A JP6113619B2 (ja) 2013-09-30 2013-09-30 研磨用組成物
JP2013-204170 2013-09-30

Publications (2)

Publication Number Publication Date
TW201518490A TW201518490A (zh) 2015-05-16
TWI638883B true TWI638883B (zh) 2018-10-21

Family

ID=52742904

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103132069A TWI638883B (zh) 2013-09-30 2014-09-17 Grinding composition

Country Status (8)

Country Link
US (1) US20160215170A1 (enExample)
EP (1) EP3053979A4 (enExample)
JP (1) JP6113619B2 (enExample)
KR (1) KR102263486B1 (enExample)
CN (1) CN105593331B (enExample)
SG (1) SG11201601941SA (enExample)
TW (1) TWI638883B (enExample)
WO (1) WO2015045757A1 (enExample)

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JP6255026B2 (ja) * 2013-09-30 2017-12-27 Hoya株式会社 シリカ砥粒、シリカ砥粒の製造方法および磁気ディスク用ガラス基板の製造方法
CN108117839B (zh) * 2016-11-29 2021-09-17 安集微电子科技（上海）股份有限公司 一种具有高氮化硅选择性的化学机械抛光液
JP6811089B2 (ja) * 2016-12-26 2021-01-13 花王株式会社 シリコンウェーハ用研磨液組成物
US11034859B2 (en) * 2018-03-28 2021-06-15 Fujifilm Electronic Materials U.S.A., Inc. Barrier ruthenium chemical mechanical polishing slurry
US10995238B2 (en) * 2018-07-03 2021-05-04 Rohm And Haas Electronic Materials Cmp Holdings Neutral to alkaline chemical mechanical polishing compositions and methods for tungsten
JP7219061B2 (ja) * 2018-11-14 2023-02-07 関東化学株式会社 ルテニウム除去用組成物
EP3929155A4 (en) * 2019-02-21 2022-04-06 Mitsubishi Chemical Corporation SILICA PARTICLES AND METHOD OF MANUFACTURE THEREOF, SILICA SOL, POLISHING COMPOSITION, POLISHING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR WAFER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES
JP7638667B2 (ja) * 2019-11-20 2025-03-04 株式会社フジミインコーポレーテッド 研磨組成物、研磨方法および基板の製造方法
JP7645241B2 (ja) * 2020-03-30 2025-03-13 株式会社フジミインコーポレーテッド 研磨用組成物
JP7854938B2 (ja) * 2020-08-07 2026-05-07 株式会社トクヤマ 次亜臭素酸イオン及びｐＨ緩衝剤を含む半導体ウェハの処理液
JP7663331B2 (ja) * 2020-09-23 2025-04-16 株式会社フジミインコーポレーテッド 研磨用組成物
TWI917676B (zh) 2021-08-24 2026-03-11 日商Ｊｓｒ股份有限公司 化學機械研磨用組成物及研磨方法
JP7766536B2 (ja) * 2022-03-29 2025-11-10 株式会社フジミインコーポレーテッド 研磨用組成物およびこれを用いた研磨方法
KR102693377B1 (ko) * 2023-07-28 2024-08-09 한양대학교 산학협력단 무취의 실리콘 게르마늄 식각액 조성물 및 이를 이용한 식각 방법

Citations (1)

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Publication number Priority date Publication date Assignee Title
CN101512732A (zh) 2006-09-05 2009-08-19 卡伯特微电子公司 利用水溶性氧化剂的碳化硅抛光方法

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US4944836A (en) 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
US6290736B1 (en) * 1999-02-09 2001-09-18 Sharp Laboratories Of America, Inc. Chemically active slurry for the polishing of noble metals and method for same
US6299795B1 (en) * 2000-01-18 2001-10-09 Praxair S.T. Technology, Inc. Polishing slurry
US6332831B1 (en) * 2000-04-06 2001-12-25 Fujimi America Inc. Polishing composition and method for producing a memory hard disk
JP2004172326A (ja) 2002-11-20 2004-06-17 Hitachi Ltd 研磨用スラリー及び半導体装置の製造方法
GB2415199B (en) * 2004-06-14 2009-06-17 Kao Corp Polishing composition
US20070037892A1 (en) * 2004-09-08 2007-02-15 Irina Belov Aqueous slurry containing metallate-modified silica particles
JP4759298B2 (ja) * 2005-03-30 2011-08-31 株式会社フジミインコーポレーテッド 単結晶表面用の研磨剤及び研磨方法
US7998866B2 (en) * 2006-09-05 2011-08-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
FR2912841B1 (fr) 2007-02-15 2009-05-22 Soitec Silicon On Insulator Procede de polissage d'heterostructures
JP2008264952A (ja) * 2007-04-23 2008-11-06 Shin Etsu Chem Co Ltd 多結晶シリコン基板の平面研磨加工方法
KR101232442B1 (ko) 2007-09-21 2013-02-12 캐보트 마이크로일렉트로닉스 코포레이션 아미노실란으로 처리된 연마제 입자를 이용한 연마 조성물 및 방법
JP5333744B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体、化学機械研磨方法および化学機械研磨用水系分散体の製造方法
DE102008059044B4 (de) 2008-11-26 2013-08-22 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe mit einer verspannt-relaxierten Si1-xGex-Schicht
US9382450B2 (en) * 2009-01-20 2016-07-05 Cabot Corporation Compositions comprising silane modified metal oxides
KR20130029441A (ko) * 2009-08-19 2013-03-22 히타치가세이가부시끼가이샤 Ｃｍｐ 연마액 및 연마 방법
JP2013084876A (ja) * 2011-09-30 2013-05-09 Fujimi Inc 研磨用組成物

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101512732A (zh) 2006-09-05 2009-08-19 卡伯特微电子公司 利用水溶性氧化剂的碳化硅抛光方法

Also Published As

Publication number Publication date
KR102263486B1 (ko) 2021-06-11
TW201518490A (zh) 2015-05-16
WO2015045757A1 (ja) 2015-04-02
EP3053979A4 (en) 2016-11-09
CN105593331B (zh) 2019-02-22
US20160215170A1 (en) 2016-07-28
JP2015067752A (ja) 2015-04-13
JP6113619B2 (ja) 2017-04-12
CN105593331A (zh) 2016-05-18
SG11201601941SA (en) 2016-04-28
EP3053979A1 (en) 2016-08-10
KR20160063331A (ko) 2016-06-03

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