CN105556006A - 获得单晶含镓氮化物的方法以及由该方法获得的单晶含镓氮化物 - Google Patents

获得单晶含镓氮化物的方法以及由该方法获得的单晶含镓氮化物 Download PDF

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Publication number
CN105556006A
CN105556006A CN201480031120.6A CN201480031120A CN105556006A CN 105556006 A CN105556006 A CN 105556006A CN 201480031120 A CN201480031120 A CN 201480031120A CN 105556006 A CN105556006 A CN 105556006A
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CN
China
Prior art keywords
nitride
concentration
gallium
oxygen
ammonia
Prior art date
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CN201480031120.6A
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English (en)
Chinese (zh)
Inventor
罗曼·多拉德津斯基
马尔钦·扎亚茨
罗伯特·库哈尔斯基
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Ammono Sp zoo
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Ammono Sp zoo
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Publication of CN105556006A publication Critical patent/CN105556006A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • C30B7/105—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes using ammonia as solvent, i.e. ammonothermal processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacture And Refinement Of Metals (AREA)
CN201480031120.6A 2013-05-30 2014-03-24 获得单晶含镓氮化物的方法以及由该方法获得的单晶含镓氮化物 Pending CN105556006A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
PLP.404149 2013-05-30
PL404149A PL229568B1 (pl) 2013-05-30 2013-05-30 Sposób wytwarzania monokrystalicznego azotku zawierającego gal i monokrystaliczny azotek zawierający gal, wytworzony tym sposobem
PCT/EP2014/055876 WO2014191126A1 (en) 2013-05-30 2014-03-24 Method for obtaining monocrystalline gallium-containing nitride and monocrystalline gallium-containing nitride obtained by this method

Publications (1)

Publication Number Publication Date
CN105556006A true CN105556006A (zh) 2016-05-04

Family

ID=50543016

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480031120.6A Pending CN105556006A (zh) 2013-05-30 2014-03-24 获得单晶含镓氮化物的方法以及由该方法获得的单晶含镓氮化物

Country Status (10)

Country Link
US (1) US20160108547A1 (https=)
EP (1) EP3063315A1 (https=)
JP (1) JP2016521667A (https=)
KR (1) KR20160036013A (https=)
CN (1) CN105556006A (https=)
CA (1) CA2913720A1 (https=)
HK (1) HK1224343A1 (https=)
PL (1) PL229568B1 (https=)
RU (1) RU2015152554A (https=)
WO (1) WO2014191126A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL231548B1 (pl) 2014-09-11 2019-03-29 Ammono Spolka Akcyjna Sposób wytwarzania monokrystalicznego azotku zawierającego gal

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004061923A1 (en) * 2002-12-27 2004-07-22 General Electric Company Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same
WO2010017232A1 (en) * 2008-08-07 2010-02-11 Soraa, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
CN101988213A (zh) * 2009-06-25 2011-03-23 阿莫诺公司 块状单晶含镓氮化物、其获得方法、其制造的衬底以及在该衬底上制造的器件
CN102191552A (zh) * 2010-03-11 2011-09-21 Soraa有限公司 改善的半绝缘iii族金属氮化物及其制造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI277666B (en) 2001-06-06 2007-04-01 Ammono Sp Zoo Process and apparatus for obtaining bulk mono-crystalline gallium-containing nitride
PL219601B1 (pl) 2002-12-11 2015-06-30 Ammono Spółka Z Ograniczoną Odpowiedzialnością Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal
KR101088991B1 (ko) 2002-12-11 2011-12-01 니치아 카가쿠 고교 가부시키가이샤 벌크 단결정 갈륨-함유 질화물의 제조공정
PL221055B1 (pl) 2002-12-11 2016-02-29 Ammono Spółka Z Ograniczoną Odpowiedzialnością Sposób wytwarzania objętościowego monokrystalicznego azotku zawierającego gal
EP1759408A1 (en) 2004-06-11 2007-03-07 AMMONO Sp.z o.o. High electron mobility transistor (hemt) made of layers of group xiii element nitrides and manufacturing method thereof.
US20060247623A1 (en) * 2005-04-29 2006-11-02 Sdgi Holdings, Inc. Local delivery of an active agent from an orthopedic implant
JP5291648B2 (ja) * 2010-03-17 2013-09-18 日本碍子株式会社 窒化物結晶の製造装置及び製造方法
WO2013062042A1 (ja) * 2011-10-28 2013-05-02 三菱化学株式会社 窒化物結晶の製造方法および窒化物結晶
WO2014129544A1 (ja) * 2013-02-22 2014-08-28 三菱化学株式会社 周期表第１３族金属窒化物結晶およびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004061923A1 (en) * 2002-12-27 2004-07-22 General Electric Company Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same
WO2010017232A1 (en) * 2008-08-07 2010-02-11 Soraa, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
CN101988213A (zh) * 2009-06-25 2011-03-23 阿莫诺公司 块状单晶含镓氮化物、其获得方法、其制造的衬底以及在该衬底上制造的器件
CN102191552A (zh) * 2010-03-11 2011-09-21 Soraa有限公司 改善的半绝缘iii族金属氮化物及其制造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
谭昌龙: "《半导体物理与测试分析》", 31 August 2012 *

Also Published As

Publication number Publication date
PL404149A1 (pl) 2014-12-08
CA2913720A1 (en) 2014-12-04
EP3063315A1 (en) 2016-09-07
JP2016521667A (ja) 2016-07-25
HK1224343A1 (zh) 2017-08-18
RU2015152554A (ru) 2017-07-05
PL229568B1 (pl) 2018-07-31
KR20160036013A (ko) 2016-04-01
US20160108547A1 (en) 2016-04-21
WO2014191126A1 (en) 2014-12-04

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