PL229568B1 - Sposób wytwarzania monokrystalicznego azotku zawierającego gal i monokrystaliczny azotek zawierający gal, wytworzony tym sposobem - Google Patents
Sposób wytwarzania monokrystalicznego azotku zawierającego gal i monokrystaliczny azotek zawierający gal, wytworzony tym sposobemInfo
- Publication number
- PL229568B1 PL229568B1 PL404149A PL40414913A PL229568B1 PL 229568 B1 PL229568 B1 PL 229568B1 PL 404149 A PL404149 A PL 404149A PL 40414913 A PL40414913 A PL 40414913A PL 229568 B1 PL229568 B1 PL 229568B1
- Authority
- PL
- Poland
- Prior art keywords
- nitride
- concentration
- gallium
- oxygen
- ammonia
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 82
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 45
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 229910052733 gallium Inorganic materials 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000013078 crystal Substances 0.000 title description 36
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 53
- 239000001301 oxygen Substances 0.000 claims abstract description 53
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 53
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 22
- 238000002425 crystallisation Methods 0.000 claims abstract description 20
- 238000004090 dissolution Methods 0.000 claims abstract description 19
- 239000002019 doping agent Substances 0.000 claims abstract description 18
- 239000002904 solvent Substances 0.000 claims abstract description 9
- 229910002601 GaN Inorganic materials 0.000 claims description 67
- 239000011777 magnesium Substances 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 47
- 239000011701 zinc Substances 0.000 claims description 38
- 239000000370 acceptor Substances 0.000 claims description 36
- 239000011575 calcium Substances 0.000 claims description 26
- 230000008025 crystallization Effects 0.000 claims description 18
- 229910052749 magnesium Inorganic materials 0.000 claims description 18
- 239000011734 sodium Substances 0.000 claims description 18
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 16
- 229910052725 zinc Inorganic materials 0.000 claims description 15
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 12
- 229910052791 calcium Inorganic materials 0.000 claims description 12
- 229910052793 cadmium Inorganic materials 0.000 claims description 11
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 11
- 229910052790 beryllium Inorganic materials 0.000 claims description 9
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 8
- 239000003574 free electron Substances 0.000 claims description 8
- 239000000969 carrier Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 5
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 4
- -1 amide-imides Chemical class 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- 239000011591 potassium Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 150000001408 amides Chemical class 0.000 claims description 3
- 150000001540 azides Chemical class 0.000 claims description 3
- 150000004678 hydrides Chemical class 0.000 claims description 3
- 150000003949 imides Chemical class 0.000 claims description 3
- 229910000765 intermetallic Inorganic materials 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 2
- 239000004615 ingredient Substances 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 32
- 238000002360 preparation method Methods 0.000 description 16
- 229910052783 alkali metal Inorganic materials 0.000 description 11
- 150000001340 alkali metals Chemical class 0.000 description 11
- 238000009826 distribution Methods 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 4
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- 150000001342 alkaline earth metals Chemical class 0.000 description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 229910001413 alkali metal ion Inorganic materials 0.000 description 2
- 210000002257 embryonic structure Anatomy 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007716 flux method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000012429 reaction media Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
- C30B7/105—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes using ammonia as solvent, i.e. ammonothermal processes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Manufacture And Refinement Of Metals (AREA)
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL404149A PL229568B1 (pl) | 2013-05-30 | 2013-05-30 | Sposób wytwarzania monokrystalicznego azotku zawierającego gal i monokrystaliczny azotek zawierający gal, wytworzony tym sposobem |
| KR1020157036340A KR20160036013A (ko) | 2013-05-30 | 2014-03-24 | 단결정 갈륨-함유 질화물을 수득하는 방법 및 이 방법에 의해 수득된 단결정 갈륨-함유 질화물 |
| RU2015152554A RU2015152554A (ru) | 2013-05-30 | 2014-03-24 | Способ получения монокристаллического галлийсодержащего нитрида и монокристаллический галлийсодержащий нитрид, полученный указанным способом |
| EP14718522.7A EP3063315A1 (en) | 2013-05-30 | 2014-03-24 | Method for obtaining monocrystalline gallium-containing nitride and monocrystalline gallium-containing nitride obtained by this method |
| CN201480031120.6A CN105556006A (zh) | 2013-05-30 | 2014-03-24 | 获得单晶含镓氮化物的方法以及由该方法获得的单晶含镓氮化物 |
| JP2016515680A JP2016521667A (ja) | 2013-05-30 | 2014-03-24 | 単結晶ガリウム含有窒化物の製法及びその方法によって得られる単結晶ガリウム含有窒化物 |
| HK16112554.5A HK1224343A1 (zh) | 2013-05-30 | 2014-03-24 | 获得单晶含镓氮化物的方法以及由该方法获得的单晶含镓氮化物 |
| CA2913720A CA2913720A1 (en) | 2013-05-30 | 2014-03-24 | Method for obtaining monocrystalline gallium-containing nitride and monocrystalline gallium-containing nitride obtained by this method |
| US14/894,337 US20160108547A1 (en) | 2013-05-30 | 2014-03-24 | Method for obtaining monocrystalline gallium-containing nitride and monocrystalline gallium-containing nitride obtained by this method |
| PCT/EP2014/055876 WO2014191126A1 (en) | 2013-05-30 | 2014-03-24 | Method for obtaining monocrystalline gallium-containing nitride and monocrystalline gallium-containing nitride obtained by this method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL404149A PL229568B1 (pl) | 2013-05-30 | 2013-05-30 | Sposób wytwarzania monokrystalicznego azotku zawierającego gal i monokrystaliczny azotek zawierający gal, wytworzony tym sposobem |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| PL404149A1 PL404149A1 (pl) | 2014-12-08 |
| PL229568B1 true PL229568B1 (pl) | 2018-07-31 |
Family
ID=50543016
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL404149A PL229568B1 (pl) | 2013-05-30 | 2013-05-30 | Sposób wytwarzania monokrystalicznego azotku zawierającego gal i monokrystaliczny azotek zawierający gal, wytworzony tym sposobem |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US20160108547A1 (https=) |
| EP (1) | EP3063315A1 (https=) |
| JP (1) | JP2016521667A (https=) |
| KR (1) | KR20160036013A (https=) |
| CN (1) | CN105556006A (https=) |
| CA (1) | CA2913720A1 (https=) |
| HK (1) | HK1224343A1 (https=) |
| PL (1) | PL229568B1 (https=) |
| RU (1) | RU2015152554A (https=) |
| WO (1) | WO2014191126A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| PL231548B1 (pl) | 2014-09-11 | 2019-03-29 | Ammono Spolka Akcyjna | Sposób wytwarzania monokrystalicznego azotku zawierającego gal |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IL159165A0 (en) | 2001-06-06 | 2004-06-01 | Ammono Sp Zoo | Process and apparatus for obtaining bulk monocrystalline gallium containing nitride |
| PL221055B1 (pl) | 2002-12-11 | 2016-02-29 | Ammono Spółka Z Ograniczoną Odpowiedzialnością | Sposób wytwarzania objętościowego monokrystalicznego azotku zawierającego gal |
| US7811380B2 (en) | 2002-12-11 | 2010-10-12 | Ammono Sp. Z O.O. | Process for obtaining bulk mono-crystalline gallium-containing nitride |
| PL219601B1 (pl) | 2002-12-11 | 2015-06-30 | Ammono Spółka Z Ograniczoną Odpowiedzialnością | Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal |
| JP5159023B2 (ja) * | 2002-12-27 | 2013-03-06 | モーメンティブ・パフォーマンス・マテリアルズ・インク | 窒化ガリウム結晶、ホモエピタキシャル窒化ガリウムを基材とするデバイス、及びその製造方法 |
| KR100848379B1 (ko) | 2004-06-11 | 2008-07-25 | 암모노 에스피. 제트오. 오. | Ⅹⅲ족 원소 질화물의 층으로 이루어진 고 전자이동도트랜지스터 및 그 제조 방법 |
| US20060247623A1 (en) * | 2005-04-29 | 2006-11-02 | Sdgi Holdings, Inc. | Local delivery of an active agent from an orthopedic implant |
| WO2010017232A1 (en) * | 2008-08-07 | 2010-02-11 | Soraa, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
| US8878230B2 (en) * | 2010-03-11 | 2014-11-04 | Soraa, Inc. | Semi-insulating group III metal nitride and method of manufacture |
| EP2267197A1 (en) | 2009-06-25 | 2010-12-29 | AMMONO Sp.z o.o. | Method of obtaining bulk mono-crystalline gallium-containing nitride, bulk mono-crystalline gallium-containing nitride, substrates manufactured thereof and devices manufactured on such substrates |
| JP5291648B2 (ja) * | 2010-03-17 | 2013-09-18 | 日本碍子株式会社 | 窒化物結晶の製造装置及び製造方法 |
| EP3312310B1 (en) * | 2011-10-28 | 2021-12-15 | Mitsubishi Chemical Corporation | Gallium nitride crystal |
| WO2014129544A1 (ja) * | 2013-02-22 | 2014-08-28 | 三菱化学株式会社 | 周期表第１３族金属窒化物結晶およびその製造方法 |
-
2013
- 2013-05-30 PL PL404149A patent/PL229568B1/pl unknown
-
2014
- 2014-03-24 CA CA2913720A patent/CA2913720A1/en not_active Abandoned
- 2014-03-24 CN CN201480031120.6A patent/CN105556006A/zh active Pending
- 2014-03-24 JP JP2016515680A patent/JP2016521667A/ja not_active Ceased
- 2014-03-24 EP EP14718522.7A patent/EP3063315A1/en not_active Withdrawn
- 2014-03-24 KR KR1020157036340A patent/KR20160036013A/ko not_active Withdrawn
- 2014-03-24 HK HK16112554.5A patent/HK1224343A1/zh unknown
- 2014-03-24 RU RU2015152554A patent/RU2015152554A/ru not_active Application Discontinuation
- 2014-03-24 US US14/894,337 patent/US20160108547A1/en not_active Abandoned
- 2014-03-24 WO PCT/EP2014/055876 patent/WO2014191126A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| EP3063315A1 (en) | 2016-09-07 |
| JP2016521667A (ja) | 2016-07-25 |
| KR20160036013A (ko) | 2016-04-01 |
| CA2913720A1 (en) | 2014-12-04 |
| PL404149A1 (pl) | 2014-12-08 |
| CN105556006A (zh) | 2016-05-04 |
| WO2014191126A1 (en) | 2014-12-04 |
| RU2015152554A (ru) | 2017-07-05 |
| HK1224343A1 (zh) | 2017-08-18 |
| US20160108547A1 (en) | 2016-04-21 |
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