CN105552133A - 一种薄膜晶体管及其制备方法 - Google Patents
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- 239000010409 thin film Substances 0.000 title claims abstract description 37
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000010410 layer Substances 0.000 claims abstract description 204
- 239000010408 film Substances 0.000 claims abstract description 52
- 239000004065 semiconductor Substances 0.000 claims abstract description 51
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000009413 insulation Methods 0.000 claims abstract description 18
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 13
- 230000004888 barrier function Effects 0.000 claims description 92
- 238000005530 etching Methods 0.000 claims description 32
- 239000012212 insulator Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 21
- 239000011241 protective layer Substances 0.000 claims description 13
- 229910044991 metal oxide Inorganic materials 0.000 claims description 12
- 150000004706 metal oxides Chemical class 0.000 claims description 12
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052593 corundum Inorganic materials 0.000 abstract description 8
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 8
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 7
- 229910052681 coesite Inorganic materials 0.000 abstract description 6
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 6
- 229910052682 stishovite Inorganic materials 0.000 abstract description 6
- 229910052905 tridymite Inorganic materials 0.000 abstract description 6
- 239000002355 dual-layer Substances 0.000 abstract 1
- 239000002356 single layer Substances 0.000 abstract 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000006722 reduction reaction Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
- YSRUGFMGLKANGO-UHFFFAOYSA-N zinc hafnium(4+) indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[In+3].[Hf+4] YSRUGFMGLKANGO-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
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- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
本发明提出一种薄膜晶体管及其制备方法,所述薄膜晶体管包括基板、位于所述基板上的栅极、位于所述基板上并完全覆盖所述栅极的栅极绝缘层、位于所述栅极绝缘层上的半导体层以及位于所述半导体层上的刻蚀阻挡层以及源漏极层;所述刻蚀阻挡层包括设置于所述沟道区远离所述栅极一面上的第一阻挡层以及位于所述第一阻挡层上的第二阻挡层。本发明提出的薄膜晶体管及其制备方法,采用SiO2/Al2O3的双层薄膜结构替代SiO2单层薄膜结构作为刻蚀阻挡层,Al2O3薄膜层相对较薄,SiO2薄膜层相对较厚,避免高温对器件的损伤,Al2O3相对较薄可以减少成膜时间,提高产能;而且以Al2O3作为基础,SiO2可以在更低的温度下制备,避免高温对器件的损伤。
Description
技术领域
本发明涉及半导体技术领域,尤其涉及一种薄膜晶体管及其制备方法。
背景技术
目前,薄膜晶体管(TFT,ThinFilmTransistor)主要应用于控制和驱动液晶显示器(LCD,LiquidCrystalDisplay)、有机发光二极管(OLED,OrganicLight-EmittingDiode)显示器的子像素,是平板显示领域中最重要的电子器件。其中,采用金属氧化物(Oxide)作为沟道层材料的TFT技术是目前显示器领域研究的热点。
现有技术中大多数将铟镓锌氧化物(indiumgalliumzincoxide,IGZO)作为沟道层材料,采用IGZO的TFT可以使显示屏功耗接近OLED,但成本更低,厚度也只比OLED高出25%,且分辨率可以达到全高清(fullHD,1920*1080P)甚至超高清(UltraDefinition,分辨率4k*2k)级别。为了避免在形成源漏金属电极时保护金属氧化物层不被破坏,提高金属氧化物TFT的性能,常常采用刻蚀阻挡型(EtchStopLayer,简称ESL)金属氧化物TFT。其中,刻蚀阻挡层为采用等离子体增强化学气相沉积(PECVD)方法制备而成的二氧化硅(SiO2)薄膜,制备SiO2薄膜所使用的反应气体为SiH4和N2O,或者TEOS和O2,生成物为SiOx:H,因此,该SiO2薄膜层中含有氢。当在高温下形成该SiO2薄膜层时,由于H的扩散会导致IGZO的还原,造成TFT器件电性的恶化;而且高温容易造成IGZO损坏;当在低温下形成该SiO2薄膜层时,H含量会相对提高,且容易出现孔洞(Pinhole),也会造成TFT器件电性的恶化。综上所述,为了保持IGZOTFT器件的稳定性,必须减少刻蚀阻挡层的氢含量,同时要避免Pinhole的出现。
氧化铝(Al2O3)是一种新型的Ⅲ-Ⅵ族宽禁带半导体材料,具有良好的物理化学性质。现有技术中也有采用Al2O3来代替SiO2作为刻蚀阻挡层,但是Al2O3成膜速率慢,设备复杂,制作成本高,不利于产业化。
发明内容
为了解决现有技术的不足,本发明提出了一种薄膜晶体管及其制备方法,能够避免高温对器件的损伤、减少成膜时间、提高产能。
本发明提出的具体技术方案为:提供一种薄膜晶体管,包括:
基板;
位于所述基板上的栅极;
位于所述基板上并完全覆盖所述栅极的栅极绝缘层;
位于所述栅极绝缘层上的半导体层,所述半导体层还包括与所述栅极对应的沟道区;
位于所述半导体层上的刻蚀阻挡层,所述刻蚀阻挡层包括设置于所述沟道区远离所述栅极一面上的第一阻挡层,以及位于所述第一阻挡层上的第二阻挡层;以及
位于所述半导体层上的源漏极层,所述源漏极层包括分别与所述刻蚀阻挡层连接的源极和漏极;
其中,所述刻蚀阻挡层用于在对所述源漏极层进行刻蚀形成所述源极、漏极时保护所述半导体层;所述半导体层在所述基板上的投影面积小于所述栅极绝缘层在所述基板上的投影面积。
进一步地,所述第一阻挡层为氧化铝薄膜;所述第二阻挡层为二氧化硅薄膜。
进一步地,所述第一阻挡层的厚度为所述第二阻挡层的厚度为
进一步地,所述半导体层由金属氧化物半导材料制作而成。
进一步地,还包括位于所述栅极绝缘层上并将所述半导体层、所述源漏极层以及所述刻蚀阻挡层完全覆盖的保护层。
进一步地,所述栅极为铜或铜合金。
本发明还提供了一种如上所述的薄膜晶体管的制备方法,包括:
在所述基板上沉积第一导电薄膜并图案化所述第一导电薄膜形成为所述栅极;
在形成有所述栅极的基板上沉积第一绝缘薄膜形成为所述栅极绝缘层,使得所述栅极绝缘层完全覆盖所述栅极;
在所述栅极绝缘层上沉积一层金属氧化物薄膜并图案化所述金属氧化物薄膜形成为所述半导体层,使得所述半导体层的沟道区与所述栅极对应;
在所述沟道区远离所述栅极一面上依次沉积第二绝缘薄膜、第三绝缘薄膜并依次图案化所述第三绝缘薄膜、第二绝缘薄膜形成为所述第二阻挡层、第一阻挡层;
在所述半导体层上沉积第二导电薄膜形成为所述源漏极层,使得所述源漏极层完全覆盖所述第一阻挡层以及第二阻挡层;
刻蚀所述源漏极层形成为所述源极、所述漏极,使得所述源极、所述漏极相互分离并位于所述第一阻挡层和第二阻挡层两侧。
进一步地,所述第一阻挡层为氧化铝薄膜;所述第二阻挡层为二氧化硅薄膜;所述第一阻挡层的厚度为所述第二阻挡层的厚度为
进一步地,形成所述第二阻挡层所需的温度为100℃~250℃。
进一步地,所述薄膜晶体管还包括位于所述栅极绝缘层上并将所述半导体层、源漏极层以及刻蚀阻挡层完全覆盖的保护层,所述方法还包括:
在所述栅极绝缘层上沉积一层钝化薄膜形成为所述保护层,使得所述保护层完全覆盖所述半导体层、源漏极层以及刻蚀阻挡层。
本发明提出的薄膜晶体管及其制备方法,采用SiO2/Al2O3的双层薄膜结构替代SiO2单层薄膜结构作为刻蚀阻挡层,其中Al2O3薄膜层相对较薄,SiO2薄膜层相对较厚。这样,Al2O3薄膜层不含氢可避免金属氧化物的还原反应;Al2O3可以在低温下制备避免高温对器件的损伤;Al2O3相对较薄可以减少成膜时间,提高产能;而且以Al2O3作为基础,SiO2可以在更低的温度下制备,避免高温对器件的损伤。
附图说明
下面结合附图,通过对本发明的具体实施方式详细描述,将使本发明的技术方案及其它有益效果显而易见。
图1为本发明薄膜晶体管的结构示意图;
图2为本发明薄膜晶体管的另一结构示意图;
图3为本发明薄膜晶体管制备方法流程示意图。
具体实施方式
以下,将参照附图来详细描述本发明的实施例。然而,可以以许多不同的形式来实施本发明,并且本发明不应该被解释为限制于这里阐述的具体实施例。相反,提供这些实施例是为了解释本发明的原理及其实际应用,从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。在附图中,相同的标号将始终被用于表示相同的元件。
实施例1
参照图1,本实施例提供了一种底栅型薄膜晶体管,所述薄膜晶体管包括基板1、栅极2、栅极绝缘层3、半导体层4、刻蚀阻挡层5以及源漏极层6。
所述基板1为透明的玻璃基板或PET基板,所述的栅极2被图案化的形成于所述基板1上,所述栅极2由金属导电材料制成,例如,由铝、铜、钼等其中一种单质制成或由铝合金制成。所述栅极绝缘层3位于所述基板1上并完全覆盖所述栅极2,所述栅极绝缘层3的材料为氧化硅薄膜、氮化硅薄膜和氮氧化硅薄膜的其中一种,或是上述三种薄膜的复合结构。
所述半导体层4图案化形成于所述栅极绝缘层3上,所述半导体层由金属氧化物制成,例如,为铟镓锌氧化物(IGZO)、铪铟锌氧化物(HIZO)、铟锌氧化物(IZO)、a-InZnO等,优选的,所述半导体层由IGZO制成。所述刻蚀阻挡层5以及源漏极层6形成于所述半导体层4上,其中,在所述半导体层4中与所述栅极2对应的区域为所述半导体层4的沟道区,所述刻蚀阻挡层5位于所述沟道区远离所述栅极2的一面上;
所述源漏极层6包括源极6a、漏极6b。所述源极6a、漏极6b分别位于所述刻蚀阻挡层5的两侧,在该薄膜晶体管的俯视图中,所述源极、漏极是相互连接的(图中未示出)。所述源极6a、漏极6b由金属导电材料制成,例如,由铝、铜、钼等其中一种单质制成或由铝合金制成。为了避免所述栅极2与所述半导体层4、源漏极层6之间产生影响,导致所述薄膜晶体管的性能下降,所述半导体层4、所述源漏极层6分别在所述基板1上的投影面积小于所述栅极绝缘层3在所述基板1上的投影面积。
为了在对所述源漏极层6进行刻蚀形成所述源极6a、漏极6b时保护所述半导体层4不被破坏,所述刻蚀阻挡层5包括位于所述沟道区远离所述栅极2一面上的第一阻挡层5a以及位于所述第一阻挡层5a上的第二阻挡层5b,优选的,所述第一阻挡层5a为氧化铝薄膜,所述第二阻挡层5b为二氧化硅薄膜。
参照图2,为了提升所述薄膜晶体管的稳定性,其还包括保护层7,所述保护层7位于所述栅极绝缘层3上并将所述半导体层4、刻蚀阻挡层5以及源漏极层6完全覆盖。其中,所述保护层可以为氧化物、氮化物或者氧氮化合物。
参照图3,本实施例还提供了所述薄膜晶体管的制备方法,其中,下面方法中所涉及的图案化工艺包括光刻、刻蚀、打印、喷墨等用于形成预定图形的工艺;而光刻工艺是指利用光刻胶、掩膜版、曝光机等形成图形的工艺,这些工艺为本领域技术人员所熟知,这里不再赘述。所述方法包括以下步骤:
步骤S1、采用磁控溅射(PVD)的方法在所述基板1上沉积第一导电薄膜并图案化所述第一导电薄膜形成为所述栅极2。
步骤S2、采用等离子体增强化学气相沉积(PECVD)方法在形成有所述栅极2的基板1上沉积第一绝缘薄膜形成为所述栅极绝缘层3,使得所述栅极绝缘层3完全覆盖所述栅极2。
步骤S3、采用磁控溅射(PVD)的方法在所述栅极绝缘层3上沉积一层金属氧化物薄膜并图案化所述金属氧化物薄膜形成为所述半导体层4,使得所述半导体层4的沟道区与所述栅极2对应。
步骤S4、在所述沟道区远离所述栅极2一面上依次沉积第二绝缘薄膜、第三绝缘薄膜并依次图案化所述第三绝缘薄膜、第二绝缘薄膜形成为所述第二阻挡层5b、第一阻挡层5a。
其中,步骤S4中形成所述第一阻挡层5a可以采用磁控溅射(PVD)方法、原子层沉积(ALD)方法或者金属有机物化学气相沉积(MOCVD)方法,优选的,采用原子层沉积(ALD)方法形成所述第一阻挡层5a;在所述第一阻挡层5a上形成所述第二阻挡层5b采用的是等离子体增强化学气相沉积(PECVD)方法。
优选的,所述第一阻挡层5a为氧化铝薄膜,其厚度为所述第二阻挡层5b为二氧化硅薄膜,其厚度为其中,制备所述第二阻挡层5b所需的温度为100℃~250℃。
由于在所述第二阻挡层5b与所述半导体4之间设有所述第一阻挡层5a,所以,在高温下,通过使用反应气体SiH4和N2O,或者TEOS和O2制备所述第二阻挡层5b时,所述第二阻挡层5b中含有的氢不会扩散到所述半导体层4中且所述第一阻挡层5a不含氢,从而,所述半导体层4不会发生还原反应而导致所述薄膜晶体管电性的恶化。
由于所述第一阻挡层5a为氧化铝薄膜,而氧化铝薄膜成膜速率慢,设备复杂,制作成本高,不利于产业化。所以,为了减少成膜时间,提高产能,优选的,所述第一阻挡层5a的厚度为所述第二阻挡层5b的厚度为氧化铝薄膜可以在低温下制备,所述第一阻挡层5a还可以避免高温生产所述第一阻挡层5b时损坏所述薄膜晶体管。
步骤S5、采用磁控溅射(PVD)的方法在所述半导体层4上沉积第二导电薄膜形成为所述源漏极层6,使得所述源漏极层6完全覆盖所述第一阻挡层5a以及第二阻挡层5b。
步骤S6、刻蚀所述源漏极层6形成为所述源极6a、所述漏极6b,使得所述源极6a、所述漏极6b相互分离并分别位于所述第一阻挡层5a和第二阻挡层5b两侧。
步骤S7、采用等离子体增强化学气相沉积(PECVD)方法在所述栅极绝缘层3上沉积一层钝化薄膜形成为所述保护层7,使得所述保护层7完全覆盖所述半导体层4、刻蚀阻挡层5以及源漏极层6。
本实施例中列举出的薄膜晶体管中栅极2、栅极绝缘层3、半导体层4、刻蚀阻挡层5、源漏极层6的制备方法仅仅是作为示例示出,并不用于对本发明进行限定,所述栅极2、栅极绝缘层3、半导体层4、刻蚀阻挡层5、源漏极层6的制备方法也可以采用其他本领域技术人员所熟知的方法,这里不再赘述。
从上可知,本发明提出的薄膜晶体管及其制备方法,采用SiO2/Al2O3的双层薄膜结构替代SiO2单层薄膜结构作为刻蚀阻挡层,其中Al2O3薄膜层相对较薄,SiO2薄膜层相对较厚。这样,Al2O3薄膜层不含氢可避免金属氧化物的还原反应;Al2O3可以在低温下制备避免高温对器件的损伤;Al2O3相对较薄可以减少成膜时间,提高产能;而且以Al2O3作为基础,SiO2可以在更低的温度下制备,避免高温对器件的损伤。
以上所述仅是本申请的具体实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本申请原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本申请的保护范围。
Claims (10)
1.一种薄膜晶体管,其特征在于,包括:
基板;
位于所述基板上的栅极;
位于所述基板上并完全覆盖所述栅极的栅极绝缘层;
位于所述栅极绝缘层上的半导体层,所述半导体层还包括与所述栅极对应的沟道区;
位于所述半导体层上的刻蚀阻挡层,所述刻蚀阻挡层包括设置于所述沟道区远离所述栅极一面上的第一阻挡层,以及位于所述第一阻挡层上的第二阻挡层;以及
位于所述半导体层上的源漏极层,所述源漏极层包括分别与所述刻蚀阻挡层连接的源极和漏极;
其中,所述刻蚀阻挡层用于在对所述源漏极层进行刻蚀形成所述源极、漏极时保护所述半导体层;所述半导体层在所述基板上的投影面积小于所述栅极绝缘层在所述基板上的投影面积。
2.根据权利要求1所述的薄膜晶体管,其特征在于,所述第一阻挡层为氧化铝薄膜;所述第二阻挡层为二氧化硅薄膜。
3.根据权利要求1或2所述的薄膜晶体管,其特征在于,所述第一阻挡层的厚度为所述第二阻挡层的厚度为
4.根据权利要求1所述的薄膜晶体管,其特征在于,所述半导体层由金属氧化物半导材料制作而成。
5.根据权利要求1所述的薄膜晶体管,其特征在于,还包括位于所述栅极绝缘层上并将所述半导体层、所述源漏极层以及所述刻蚀阻挡层完全覆盖的保护层。
6.根据权利要求1或5所述的薄膜晶体管,其特征在于,所述栅极为铜或铜合金。
7.一种如权利要求1所述的薄膜晶体管的制备方法,其特征在于,包括:
在所述基板上沉积第一导电薄膜并图案化所述第一导电薄膜形成为所述栅极;
在形成有所述栅极的基板上沉积第一绝缘薄膜形成为所述栅极绝缘层,使得所述栅极绝缘层完全覆盖所述栅极;
在所述栅极绝缘层上沉积一层金属氧化物薄膜并图案化所述金属氧化物薄膜形成为所述半导体层,使得所述半导体层的沟道区与所述栅极对应;
在所述沟道区远离所述栅极一面上依次沉积第二绝缘薄膜、第三绝缘薄膜并依次图案化所述第三绝缘薄膜、第二绝缘薄膜形成为所述第二阻挡层、第一阻挡层;
在所述半导体层上沉积第二导电薄膜形成为所述源漏极层,使得所述源漏极层完全覆盖所述第一阻挡层以及第二阻挡层;
刻蚀所述源漏极层形成为所述源极、所述漏极,使得所述源极、所述漏极相互分离并位于所述第一阻挡层和第二阻挡层两侧。
8.根据权利要求7所述的制备方法,其特征在于,所述第一阻挡层为氧化铝薄膜;所述第二阻挡层为二氧化硅薄膜;所述第一阻挡层的厚度为所述第二阻挡层的厚度为
9.根据权利要求7所述的制备方法,其特征在于,形成所述第二阻挡层所需的温度为100℃~250℃。
10.根据权利要求7所述的制备方法,其特征在于,所述薄膜晶体管还包括位于所述栅极绝缘层上并将所述半导体层、源漏极层以及刻蚀阻挡层完全覆盖的保护层,所述方法还包括:
在所述栅极绝缘层上沉积一层钝化薄膜形成为所述保护层,使得所述保护层完全覆盖所述半导体层、源漏极层以及刻蚀阻挡层。
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US10580905B2 (en) | 2020-03-03 |
US20180097115A1 (en) | 2018-04-05 |
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