CN105543967A - 一种稳定pvt法生长4h高纯碳化硅单晶晶型的原料处理方法 - Google Patents
一种稳定pvt法生长4h高纯碳化硅单晶晶型的原料处理方法 Download PDFInfo
- Publication number
- CN105543967A CN105543967A CN201610072172.9A CN201610072172A CN105543967A CN 105543967 A CN105543967 A CN 105543967A CN 201610072172 A CN201610072172 A CN 201610072172A CN 105543967 A CN105543967 A CN 105543967A
- Authority
- CN
- China
- Prior art keywords
- silicon carbide
- sic
- carbon
- powder
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 57
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000002994 raw material Substances 0.000 title abstract description 5
- 239000013078 crystal Substances 0.000 claims abstract description 40
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000000843 powder Substances 0.000 claims abstract description 24
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 13
- 239000010439 graphite Substances 0.000 claims abstract description 11
- 230000008021 deposition Effects 0.000 claims abstract description 7
- 238000001816 cooling Methods 0.000 claims abstract description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 23
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 238000005336 cracking Methods 0.000 claims description 8
- 238000007664 blowing Methods 0.000 claims description 3
- 240000003936 Plumbago auriculata Species 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract description 12
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052786 argon Inorganic materials 0.000 abstract description 6
- 238000000151 deposition Methods 0.000 abstract description 5
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000000859 sublimation Methods 0.000 abstract description 2
- 230000008022 sublimation Effects 0.000 abstract description 2
- 230000001276 controlling effect Effects 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 238000000197 pyrolysis Methods 0.000 abstract 1
- 230000035484 reaction time Effects 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 241000209456 Plumbago Species 0.000 description 9
- 238000001237 Raman spectrum Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004611 spectroscopical analysis Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 102000029749 Microtubule Human genes 0.000 description 1
- 108091022875 Microtubule Proteins 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 210000004688 microtubule Anatomy 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4417—Methods specially adapted for coating powder
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
本发明公开了一种稳定PVT法生长4H高纯碳化硅单晶晶型的原料处理方法包括：步骤1将合成好的碳化硅粉源放置在石墨坩埚内，用CVD炉加热至1000-1300℃；步骤2向所述CVD炉内通入Ar（氩）和CH4（甲烷）的混合气体，调节调节Ar与CH4质量流比在1000-1之间，压力控制在30000-300pa之间，裂解后的碳沉积在碳化硅粉料表面，旋转翻动粉料使其在表面均匀沉积，根据沉积量需求增加反映时间；步骤3停止通入CH4气体后进行降温停炉，最终得到带有裂解碳镀层的碳化硅粉料。本发明通过增加原料中活性高的沉积碳来调节碳化硅生长中Si/C组分，使升华组分中Si与原料表面上的碳进行反应，最终降低生长组分中Si/C比来实现生长4H-SiC高纯碳化硅晶型的稳定控制。
Description
技术领域
本发明涉及半导体生长技术领域，特别是一种稳定PVT（物理气相沉积）法生长4H高纯碳化硅单晶晶型的原料处理方法。
背景技术
SiC是第三代宽带隙半导体材料之一，相对于常见Si和GaAs等半导体材料，SiC在带隙、介质击穿电压、电子饱和速率、导热率等方面具有优良的性能。因此，SiC有望成为超越Si极限的下一代能源器件和高温器件材料，伴随于此，广泛进行着衬底材料的发展。特别是在极端条件和恶劣条件下应用时，SiC器件的特性远远超过了Si器件和GaAs器件。在光电子领域，也较相对传统衬底材料Si与蓝宝石优越很多。
碳化硅生长方式有PVT（物理气相沉积）法、CVD（化学气相沉积）法等，大尺寸高纯半绝缘碳化硅的生长多采用PVT法进行生长，生长的晶型多已4H-SiC或6H-SiC为主要晶型衬底材料。碳化硅晶型有3C-SiC、2H-SiC、4H-SiC、6H-SiC、15R-SiC等多型，一定条件下晶体的几种多型结构可以共存共融，2H-SiC多型一般在1300-1600℃形成；4H-SiC多型在1900-2500℃温度范围生成；15R-SiC多型在2300-2700℃范围内形成。而3C-SiC和6H-SiC多型生成温度范围则很宽，3C-SiC多型生成温度范围1000-2750℃几乎涵盖了其他多型的生成温度范围；6H-SiC多型生成范围为1800-3000℃，涵盖了4H-SiC、15R-SiC多型生成范围。因此在生长过程容易产生多型，多型带来的位错、微管等缺陷大大降低了其制备的器件性能。
根据4H-SiC的生长特点，适宜的温度范围和底的生长组分Si/C比有利于提高4H-SiC生长稳定性，适宜的温度范围其采用测温可以满足控制，但与其矛盾的条件SiC的升华特性，底的Si/C比一般要求较高的生长温度，根据4H-SiC、6H-SiC、15R-SiC的形成温度范围，控制在2100-2300℃之间较为适宜4H-SiC生长。这样其生长组分的Si/C比又较高，因此如何降低碳化硅生长气氛中Si/C是解决晶型稳定的关键技术。
发明内容
针对现有技术存在的问题，本发明的目的在于提供一种稳定PVT法生长4H高纯碳化硅单晶晶型的原料处理方法。
为实现上述目的本发明一种稳定PVT法生长4H高纯碳化硅单晶晶型的原料处理方法，该方法包括如下步骤：
步骤1将合成好的碳化硅粉源放置在石墨坩埚内，用CVD炉加热至1000-1300℃；
步骤2向所述CVD炉内通入Ar（氩）和CH4（甲烷）的混合气体，调节调节Ar与CH4质量流比在1000-1之间，压力控制在30000-300pa之间，裂解后的碳沉积在碳化硅粉料表面，旋转翻动粉料使其在表面均匀沉积，根据沉积量需求增加反映时间；
步骤3停止通入CH4气体后进行降温停炉，最终得到带有裂解碳镀层的碳化硅粉料。
进一步，所述带有裂解碳镀层的碳化硅粉料的表面镀层碳与碳化硅粉料的质量比在1/500-1/5000之间。
本发明通过增加原料中活性高的沉积碳来调节碳化硅生长中Si/C组分，使升华组分中Si与原料表面上的碳进行反应，最终降低生长组分中Si/C比来实现生长4H-SiC高纯碳化硅晶型的稳定控制。
附图说明
图1为实例1中利用本发明进行生长的4H-SiC晶型的晶体的光谱分析图；
图2为实例2中利用本发明进行生长的4H-SiC晶型的晶体的光谱分析图；
图3为实例3中利用本发明进行生长的4H-SiC晶型的晶体的光谱分析图。
具体实施方式
下面结合附图和具体实施方式对本发明作进一步详细说明。
本发明的一种稳定PVT法生长4H高纯碳化硅单晶晶型的原料处理方法，该方法包括如下步骤：
步骤1将合成好的碳化硅粉源放置在石墨坩埚内，利用CVD炉加热至1000-1300℃；
步骤2向CVD炉内通入Ar（氩）和CH4（甲烷）的混合气体，调节调节Ar与CH4质量流比在1000-1之间，石墨坩埚内压力控制在30000-300pa之间，裂解后的碳沉积在碳化硅粉料表面，旋转翻动粉料使其在表面均匀沉积，根据沉积量需求增加反映时间；
步骤3停止通入CH4气体后进行降温停炉，最终得到带有活性高的裂解碳镀层的高纯碳化硅粉料。
优选的，将通过上述方法处理的碳化硅粉料的表面镀层碳与碳化硅粉料的质量比在1/500-1/5000之间。
下面选取三组生长实例说明本发明的效果：
实例1：CVD炉反应温度1150℃，Ar/CH4：800/50（sccm/min）,石墨坩埚内压力控制在3000pa，反应20分钟。将得到的碳化硅粉料放置在石墨坩埚中，将4H-SiC籽晶固定在粉料上方的坩埚盖上，向单晶炉中通入Ar气体或混有H2的气体充至4-8万帕，温度控制在2100-2300℃之间进行4H-SiC晶型的晶体生长。将晶体切片后使用拉曼光谱分析进行晶型测试，如图1所示，晶型稳定95%。
实例2：CVD炉反应温度1200℃，Ar/CH4：800/50（sccm/min）,石墨坩埚内压力控制在2000pa，反应20分钟。将得到的碳化硅粉料放置在石墨坩埚中，将4H-SiC籽晶固定在粉料上方的坩埚盖上，向单晶炉中通入Ar气体或混有H2的气体充至4-8万帕，温度控制在2100-2300℃之间进行4H-SiC晶型的晶体生长。将晶体切片后使用拉曼光谱分析进行晶型测试，如图2所示，晶型稳定100%。
实例3：CVD炉反应温度1150℃，Ar/CH4：500/50（sccm/min）,石墨坩埚内压力控制在2000pa，反应20分钟。将得到的碳化硅粉料放置在石墨坩埚中，将4H-SiC籽晶固定在粉料上方的坩埚盖上，向单晶炉中通入Ar气体或混有H2的气体充至4-8万帕，温度控制在2100-2300℃之间进行4H-SiC晶型的晶体生长。将晶体切片后使用拉曼光谱分析进行晶型测试，如图3所示，晶型稳定100%。
上述示例只是用于说明本发明，本发明的实施方式并不限于这些示例，本领域技术人员所做出的符合本发明思想的各种具体实施方式都在本发明的保护范围之内。
Claims (2)
1.一种稳定PVT法生长4H高纯碳化硅单晶晶型的原料处理方法，其特征在于，该方法包括如下步骤：
步骤1将合成好的碳化硅粉源放置在石墨坩埚内，用CVD炉加热至1000-1300℃；
步骤2向所述CVD炉内通入Ar和CH4的混合气体，调节调节Ar与CH4质量流比在1000-1之间，压力控制在30000-300pa之间，裂解后的碳沉积在碳化硅粉料表面，旋转翻动粉料使其在表面均匀沉积，根据沉积量需求增加反映时间；
步骤3停止通入CH4气体后进行降温停炉，最终得到带有裂解碳镀层的碳化硅粉料。
2.如权利要求1所述的处理方法，其特征在于，所述带有裂解碳镀层的碳化硅粉料的表面镀层碳与碳化硅粉料的质量比在1/500-1/5000之间。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610072172.9A CN105543967B (zh) | 2016-02-02 | 2016-02-02 | 一种稳定pvt法生长4h高纯碳化硅单晶晶型的原料处理方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610072172.9A CN105543967B (zh) | 2016-02-02 | 2016-02-02 | 一种稳定pvt法生长4h高纯碳化硅单晶晶型的原料处理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105543967A true CN105543967A (zh) | 2016-05-04 |
| CN105543967B CN105543967B (zh) | 2023-02-03 |
Family
ID=55823515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610072172.9A Active CN105543967B (zh) | 2016-02-02 | 2016-02-02 | 一种稳定pvt法生长4h高纯碳化硅单晶晶型的原料处理方法 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105543967B (zh) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105821471A (zh) * | 2016-05-10 | 2016-08-03 | 山东大学 | 一种低应力高纯半绝缘SiC 单晶的制备方法 |
| CN108193282A (zh) * | 2017-11-14 | 2018-06-22 | 山东天岳先进材料科技有限公司 | 一种高纯碳化硅原料的合成方法及其应用 |
| CN110541199A (zh) * | 2019-10-11 | 2019-12-06 | 山东大学 | 一种直径8英寸及以上尺寸高质量SiC籽晶的制备方法 |
| CN110872728A (zh) * | 2019-11-28 | 2020-03-10 | 山东大学 | 一种简单、高效降低SiC单晶中碳包裹物的方法 |
| CN112226815A (zh) * | 2020-11-16 | 2021-01-15 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | 用于pvt法生长碳化硅单晶的碳化硅粉料的预处理方法 |
| CN113026106A (zh) * | 2021-05-19 | 2021-06-25 | 浙江大学杭州国际科创中心 | 一种碳化硅晶体的生长工艺 |
| CN113445122A (zh) * | 2020-03-24 | 2021-09-28 | 芯恩（青岛）集成电路有限公司 | 提高SiC晶体生长效率及质量的方法及装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004099414A (ja) * | 2002-09-13 | 2004-04-02 | National Institute Of Advanced Industrial & Technology | 炭化珪素単結晶の製造方法 |
| CN1884639A (zh) * | 2006-05-29 | 2006-12-27 | 中国科学院物理研究所 | 一种碳化硅单晶生长后的热处理方法 |
| US20070068449A1 (en) * | 2005-09-29 | 2007-03-29 | Neosemitech Corporation | Growing method of SiC single crystal |
| JP2009249207A (ja) * | 2008-04-03 | 2009-10-29 | Nippon Steel Corp | 炭化珪素単結晶インゴットの製造方法 |
| JP2013103848A (ja) * | 2011-11-11 | 2013-05-30 | Mitsubishi Electric Corp | ＳｉＣ単結晶の製造方法 |
-
2016
- 2016-02-02 CN CN201610072172.9A patent/CN105543967B/zh active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004099414A (ja) * | 2002-09-13 | 2004-04-02 | National Institute Of Advanced Industrial & Technology | 炭化珪素単結晶の製造方法 |
| US20070068449A1 (en) * | 2005-09-29 | 2007-03-29 | Neosemitech Corporation | Growing method of SiC single crystal |
| CN1884639A (zh) * | 2006-05-29 | 2006-12-27 | 中国科学院物理研究所 | 一种碳化硅单晶生长后的热处理方法 |
| JP2009249207A (ja) * | 2008-04-03 | 2009-10-29 | Nippon Steel Corp | 炭化珪素単結晶インゴットの製造方法 |
| JP2013103848A (ja) * | 2011-11-11 | 2013-05-30 | Mitsubishi Electric Corp | ＳｉＣ単結晶の製造方法 |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105821471A (zh) * | 2016-05-10 | 2016-08-03 | 山东大学 | 一种低应力高纯半绝缘SiC 单晶的制备方法 |
| CN108193282A (zh) * | 2017-11-14 | 2018-06-22 | 山东天岳先进材料科技有限公司 | 一种高纯碳化硅原料的合成方法及其应用 |
| CN110541199A (zh) * | 2019-10-11 | 2019-12-06 | 山东大学 | 一种直径8英寸及以上尺寸高质量SiC籽晶的制备方法 |
| CN110872728A (zh) * | 2019-11-28 | 2020-03-10 | 山东大学 | 一种简单、高效降低SiC单晶中碳包裹物的方法 |
| CN110872728B (zh) * | 2019-11-28 | 2021-05-28 | 山东大学 | 一种简单、高效降低SiC单晶中碳包裹物的方法 |
| CN113445122A (zh) * | 2020-03-24 | 2021-09-28 | 芯恩（青岛）集成电路有限公司 | 提高SiC晶体生长效率及质量的方法及装置 |
| CN113445122B (zh) * | 2020-03-24 | 2022-11-22 | 芯恩（青岛）集成电路有限公司 | 提高SiC晶体生长效率及质量的方法及装置 |
| CN112226815A (zh) * | 2020-11-16 | 2021-01-15 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | 用于pvt法生长碳化硅单晶的碳化硅粉料的预处理方法 |
| CN113026106A (zh) * | 2021-05-19 | 2021-06-25 | 浙江大学杭州国际科创中心 | 一种碳化硅晶体的生长工艺 |
| CN113026106B (zh) * | 2021-05-19 | 2021-08-10 | 浙江大学杭州国际科创中心 | 一种碳化硅晶体的生长工艺 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105543967B (zh) | 2023-02-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105543967A (zh) | 一种稳定pvt法生长4h高纯碳化硅单晶晶型的原料处理方法 | |
| JP5657109B2 (ja) | 半絶縁炭化珪素単結晶及びその成長方法 | |
| Pedersen et al. | Chloride-based CVD growth of silicon carbide for electronic applications | |
| KR920004173B1 (ko) | 실리콘 기판상에 단결정 β-sic층을 성장시키는 방법 | |
| CN106917072A (zh) | 一种使用辅助衬底大面积清洁制备单层二硫化钼薄膜的方法 | |
| KR101591833B1 (ko) | 도핑 된 금속 칼코게나이드 박막의 제조 방법 및 그 박막 | |
| Dhanaraj et al. | Epitaxial growth and characterization of silicon carbide films | |
| Fujihira et al. | Growth and characterization of 4H–SiC in vertical hot-wall chemical vapor deposition | |
| CN106335897A (zh) | 一种大单晶双层石墨烯及其制备方法 | |
| CN103270203B (zh) | 单晶碳化硅外延生长用供料件和单晶碳化硅的外延生长方法 | |
| CN103270201B (zh) | 单晶碳化硅液相外延生长用种晶件和单晶碳化硅的液相外延生长方法 | |
| KR101767295B1 (ko) | 단결정 탄화규소 액상 에피택셜 성장용 시드재 및 단결정 탄화규소의 액상 에피택셜 성장 방법 | |
| CN107578988B (zh) | 碳化硅外延层钝化方法 | |
| CN104514034B (zh) | 用于碳化硅生长的高温装置及方法 | |
| Hens et al. | Epitaxial growth of cubic silicon carbide on silicon using hot filament chemical vapor deposition | |
| JP2021502944A (ja) | 少量のバナジウムをドーピングした半絶縁炭化ケイ素単結晶、基板、製造方法 | |
| JP3590464B2 (ja) | ４ｈ型単結晶炭化珪素の製造方法 | |
| CN106399967B (zh) | 一种SiC薄膜材料的制备方法 | |
| KR101425980B1 (ko) | 탄화규소 분말 제조 장치 및 탄화규소 분말 제조 방법 | |
| JP5724124B2 (ja) | 単結晶炭化ケイ素エピタキシャル成長用フィード材及び単結晶炭化ケイ素のエピタキシャル成長方法 | |
| JPS6115150B2 (zh) | ||
| Afanasev et al. | Analysis of the Gas Phase Epitaxy of Silicon Carbide as a Basic Process for the Technology of Power Electronics | |
| JP5724121B2 (ja) | 単結晶炭化ケイ素エピタキシャル成長用フィード材及び単結晶炭化ケイ素のエピタキシャル成長方法 | |
| Leone | Advances in SiC growth using chloride-based CVD | |
| JP5724123B2 (ja) | 単結晶炭化ケイ素エピタキシャル成長用フィード材及び単結晶炭化ケイ素のエピタキシャル成長方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20161216 Address after: Tonghui trunk road 100176 Beijing city Daxing District economic and Technological Development Zone No. 17 hospital Applicant after: BEIJING CENTURY GOLDRAY SEMICONDUCTOR Co.,Ltd. Address before: Tonghui trunk road 101111 Beijing city Daxing District economic and Technological Development Zone No. 17 hospital Applicant before: BEIJING HUAJINCHUANGWEI ELECTRONICS Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240327 Address after: Room JZ2467, Yard 2, Junzhuang Road, Junzhuang Town, Mentougou District, Beijing, 102399 (cluster registration) Patentee after: Beijing Xingyun Lianzhong Technology Co.,Ltd. Country or region after: China Address before: 100176 courtyard 17, Tonghui Ganqu Road, Daxing Economic and Technological Development Zone, Beijing Patentee before: BEIJING CENTURY GOLDRAY SEMICONDUCTOR Co.,Ltd. Country or region before: China |