CN106399967B - 一种SiC薄膜材料的制备方法 - Google Patents
一种SiC薄膜材料的制备方法 Download PDFInfo
- Publication number
- CN106399967B CN106399967B CN201610841190.9A CN201610841190A CN106399967B CN 106399967 B CN106399967 B CN 106399967B CN 201610841190 A CN201610841190 A CN 201610841190A CN 106399967 B CN106399967 B CN 106399967B
- Authority
- CN
- China
- Prior art keywords
- sic
- film
- carbon nanotube
- substrate
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610841190.9A CN106399967B (zh) | 2016-09-22 | 2016-09-22 | 一种SiC薄膜材料的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610841190.9A CN106399967B (zh) | 2016-09-22 | 2016-09-22 | 一种SiC薄膜材料的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106399967A CN106399967A (zh) | 2017-02-15 |
CN106399967B true CN106399967B (zh) | 2019-03-01 |
Family
ID=57996841
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610841190.9A Expired - Fee Related CN106399967B (zh) | 2016-09-22 | 2016-09-22 | 一种SiC薄膜材料的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106399967B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117238758A (zh) * | 2023-11-14 | 2023-12-15 | 深圳天狼芯半导体有限公司 | 一种通过牺牲氧化NANO-P掺杂EPI钝化SiC MOS界面缺陷方法 |
-
2016
- 2016-09-22 CN CN201610841190.9A patent/CN106399967B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN106399967A (zh) | 2017-02-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103614769B (zh) | 一种基于原位刻蚀的氮化镓同质外延方法 | |
CN111029246B (zh) | 一种降低SiC外延层中三角形缺陷的方法 | |
CN105140102A (zh) | 一种优化的在硅衬底上外延生长β-碳化硅薄膜的方法 | |
CN106835268A (zh) | 一种iii族氮化物衬底的制备方法 | |
US20140256120A1 (en) | Process for Preparing Graphene Based on Metal Film-Assisted Annealing and the Reaction with Cl2 | |
CN108538707B (zh) | 一种二维黑磷晶体制备方法 | |
CN105731825B (zh) | 一种利用石墨烯玻璃低成本大面积制备氮化铝薄膜的方法 | |
CN105719968B (zh) | 硅衬底上外延氮化镓薄膜及制备hemt器件的方法 | |
CN108428618B (zh) | 基于石墨烯插入层结构的氮化镓生长方法 | |
CN105441902A (zh) | 一种外延碳化硅-石墨烯复合薄膜的制备方法 | |
CN104561926A (zh) | 一种在硅衬底上制备β-碳化硅薄膜的方法 | |
CN111477534B (zh) | 氮化铝模板及其制备方法 | |
CN114899099A (zh) | 一种金刚石衬底上生长氮化镓高电子迁移率晶体管的外延方法 | |
CN113130296B (zh) | 一种六方氮化硼上生长氮化镓的方法 | |
CN111593408B (zh) | 一种超大尺寸自支撑氮化镓单晶及其制备方法 | |
CN106399967B (zh) | 一种SiC薄膜材料的制备方法 | |
CN111501102A (zh) | 基于hvpe的自支撑氮化镓单晶及其制备方法 | |
CN105006427B (zh) | 一种利用低温过渡层生长高质量氮化镓外延结构的方法 | |
WO2023079880A1 (ja) | ヘテロエピタキシャルウェーハの製造方法 | |
JP2006253617A (ja) | SiC半導体およびその製造方法 | |
CN113089091A (zh) | 氮化硼模板及其制备方法 | |
CN103311100A (zh) | 含有非极性m面GaN缓冲层的InN半导体器件的制备方法 | |
CN108878265B (zh) | 一种在Si(100)衬底上生长单晶氮化镓薄膜的方法 | |
CN112575378A (zh) | 一种在hpve生长中实现一次或多次空洞掩埋插入层的方法 | |
JP3909690B2 (ja) | エピタキシャル成長によるSiC膜の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20181213 Address after: 317700 Zhongcun 122, Zhanyuan Street, Jiaojiang District, Taizhou City, Zhejiang Province Applicant after: Lin Piaopiao Address before: 523000 productivity building 406, high tech Industrial Development Zone, Songshan Lake, Dongguan, Guangdong Applicant before: Dongguan Lianzhou Intellectual Property Operation Management Co.,Ltd. |
|
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20190118 Address after: 518101 left, third and fourth floors of 225 Xiangshan Avenue, Songgang Street, Baoan District, Shenzhen City, Guangdong Province Applicant after: Shenzhen Wallitay Electronic Technology Co.,Ltd. Address before: 317700 Zhongcun 122, Zhanyuan Street, Jiaojiang District, Taizhou City, Zhejiang Province Applicant before: Lin Piaopiao |
|
TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190301 |
|
CF01 | Termination of patent right due to non-payment of annual fee |