CN105529392B - 半导体器件和用于制造半导体器件的方法 - Google Patents

半导体器件和用于制造半导体器件的方法 Download PDF

Info

Publication number
CN105529392B
CN105529392B CN201610015092.XA CN201610015092A CN105529392B CN 105529392 B CN105529392 B CN 105529392B CN 201610015092 A CN201610015092 A CN 201610015092A CN 105529392 B CN105529392 B CN 105529392B
Authority
CN
China
Prior art keywords
optical element
semiconductor
semiconductor chip
semiconductor device
refractive index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201610015092.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN105529392A (zh
Inventor
迈克尔·克鲁帕
西蒙·耶雷比奇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN105529392A publication Critical patent/CN105529392A/zh
Application granted granted Critical
Publication of CN105529392B publication Critical patent/CN105529392B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/00009—Production of simple or compound lenses
    • B29D11/00432—Auxiliary operations, e.g. machines for filling the moulds
    • B29D11/00442—Curing the lens material
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/095—Refractive optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Ophthalmology & Optometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Led Device Packages (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
CN201610015092.XA 2010-06-22 2011-05-25 半导体器件和用于制造半导体器件的方法 Active CN105529392B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102010024545.3 2010-06-22
DE102010024545.3A DE102010024545B4 (de) 2010-06-22 2010-06-22 Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
CN201180031248.9A CN102947959B (zh) 2010-06-22 2011-05-25 半导体器件和用于制造半导体器件的方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201180031248.9A Division CN102947959B (zh) 2010-06-22 2011-05-25 半导体器件和用于制造半导体器件的方法

Publications (2)

Publication Number Publication Date
CN105529392A CN105529392A (zh) 2016-04-27
CN105529392B true CN105529392B (zh) 2019-10-18

Family

ID=44260354

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201610015092.XA Active CN105529392B (zh) 2010-06-22 2011-05-25 半导体器件和用于制造半导体器件的方法
CN201180031248.9A Active CN102947959B (zh) 2010-06-22 2011-05-25 半导体器件和用于制造半导体器件的方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201180031248.9A Active CN102947959B (zh) 2010-06-22 2011-05-25 半导体器件和用于制造半导体器件的方法

Country Status (8)

Country Link
US (2) US9368699B2 (enExample)
EP (1) EP2586069B1 (enExample)
JP (1) JP6315988B2 (enExample)
KR (2) KR20130023347A (enExample)
CN (2) CN105529392B (enExample)
DE (1) DE102010024545B4 (enExample)
TW (2) TWI545809B (enExample)
WO (1) WO2011160913A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010024545B4 (de) 2010-06-22 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
DE102014108368A1 (de) * 2014-06-13 2015-12-17 Osram Opto Semiconductors Gmbh Oberflächenmontierbares Halbleiterbauelement und Verfahren zu dessen Herstellung

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101128750A (zh) * 2005-02-28 2008-02-20 奥斯兰姆奥普托半导体有限责任公司 制造光学部件和发射辐射的部件的方法，以及光学部件和发射辐射的部件
CN101548397A (zh) * 2006-11-17 2009-09-30 3M创新有限公司 用于led光源的光学粘合组合物
CN101740707A (zh) * 2009-12-11 2010-06-16 晶科电子（广州）有限公司 预成型荧光粉贴片及其与发光二极管的封装方法
CN101796157A (zh) * 2007-09-03 2010-08-04 昭和电工株式会社 荧光体和其制造方法、以及使用该荧光体的发光装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6159406A (ja) * 1984-08-31 1986-03-26 Fujitsu Ltd プレ−ナ型光ガイドの光結合構造およびその製造方法
DE10023353A1 (de) 2000-05-12 2001-11-29 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung
JP3991612B2 (ja) 2001-04-09 2007-10-17 日亜化学工業株式会社 発光素子
DE10129785B4 (de) * 2001-06-20 2010-03-18 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
JP2003224304A (ja) * 2002-01-28 2003-08-08 Kasei Optonix Co Ltd 発光装置
JP4241259B2 (ja) 2003-08-06 2009-03-18 セイコーエプソン株式会社 マイクロレンズの製造方法
DE10361650A1 (de) 2003-12-30 2005-08-04 Osram Opto Semiconductors Gmbh Optoelektronisches Modul und Verfahren zu dessen Herstellung
US7645397B2 (en) 2004-01-15 2010-01-12 Nanosys, Inc. Nanocrystal doped matrixes
RU2401846C2 (ru) * 2006-04-25 2010-10-20 Учреждение Российской академии наук Институт синтетических полимерных материалов им. Н.С. Ениколопова РАН (ИСПМ РАН) Функциональные полиорганосилоксаны и композиция, способная к отверждению на их основе
TWI338380B (en) 2006-10-11 2011-03-01 Chuan Yu Hung Light emitting diode incorporating high refractive index material
US8029904B2 (en) * 2006-12-01 2011-10-04 Rohm And Haas Company Aryl (thio)ether aryl polysiloxane composition and methods for making and using same
US8895652B2 (en) 2007-06-12 2014-11-25 Ajjer, Llc High refractive index materials and composites
JP5318383B2 (ja) * 2007-08-07 2013-10-16 デクセリアルズ株式会社 光学部品封止材及び発光装置
TW200910648A (en) * 2007-08-31 2009-03-01 Isotech Products Inc Forming process of resin lens of an LED component
US20090065792A1 (en) 2007-09-07 2009-03-12 3M Innovative Properties Company Method of making an led device having a dome lens
US10256385B2 (en) * 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
US8866169B2 (en) * 2007-10-31 2014-10-21 Cree, Inc. LED package with increased feature sizes
US9287469B2 (en) 2008-05-02 2016-03-15 Cree, Inc. Encapsulation for phosphor-converted white light emitting diode
JP2009275196A (ja) * 2008-05-19 2009-11-26 Sony Corp 硬化性樹脂材料組成物、光学材料、発光装置及びその製造方法、並びに電子デバイス
DE102010024545B4 (de) 2010-06-22 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101128750A (zh) * 2005-02-28 2008-02-20 奥斯兰姆奥普托半导体有限责任公司 制造光学部件和发射辐射的部件的方法，以及光学部件和发射辐射的部件
CN101548397A (zh) * 2006-11-17 2009-09-30 3M创新有限公司 用于led光源的光学粘合组合物
CN101796157A (zh) * 2007-09-03 2010-08-04 昭和电工株式会社 荧光体和其制造方法、以及使用该荧光体的发光装置
CN101740707A (zh) * 2009-12-11 2010-06-16 晶科电子（广州）有限公司 预成型荧光粉贴片及其与发光二极管的封装方法

Also Published As

Publication number Publication date
US20130240929A1 (en) 2013-09-19
CN102947959A (zh) 2013-02-27
KR20170131724A (ko) 2017-11-29
TWI497776B (zh) 2015-08-21
KR20130023347A (ko) 2013-03-07
CN105529392A (zh) 2016-04-27
TWI545809B (zh) 2016-08-11
JP2013534728A (ja) 2013-09-05
JP6315988B2 (ja) 2018-04-25
DE102010024545B4 (de) 2022-01-13
EP2586069A1 (de) 2013-05-01
US9634207B2 (en) 2017-04-25
DE102010024545A1 (de) 2011-12-22
US20160247986A1 (en) 2016-08-25
TW201541673A (zh) 2015-11-01
WO2011160913A1 (de) 2011-12-29
CN102947959B (zh) 2016-01-27
TW201208148A (en) 2012-02-16
EP2586069B1 (de) 2017-03-01
US9368699B2 (en) 2016-06-14

Similar Documents

Publication Publication Date Title
CN100565944C (zh) 照明模块及其制造方法
KR101263041B1 (ko) 광학 광선방출소자 제조방법 및 광학 광선방출소자
US8860062B2 (en) Optoelectronic semiconductor component
US9209372B2 (en) Optoelectronic module and method for producing an optoelectronic module
JP6099764B2 (ja) オプトエレクトロニクス半導体部品を製造する方法およびオプトエレクトロニクス半導体部品
CN103026512A (zh) 器件和用于制造器件的方法
CN105531835A (zh) 光电子半导体组件和用于制造光电子半导体组件的方法
CN104937733B (zh) 用于制造多个光电子器件的方法和光电子器件
US20150014737A1 (en) Method for Producing an Optoelectronic Semiconductor Component, and Optoelectronic Semiconductor Component
US7893452B2 (en) Optoelectronic component and package for an optoelectronic component
US20120086035A1 (en) LED Device With A Light Extracting Rough Structure And Manufacturing Methods Thereof
US9620674B2 (en) Optoelectronic component and method for the production thereof
CN103069592A (zh) 发射辐射的器件和用于制造发射辐射的器件的方法
CN105529392B (zh) 半导体器件和用于制造半导体器件的方法
US20150287883A1 (en) Composite Substrate, Semiconductor Chip Having a Composite Substrate and Method for Producing Composite Substrates and Semiconductor Chips
TWI237411B (en) Process and structure for packaging LED's
US9252344B2 (en) Structural component and method for producing a structural component
JP4367299B2 (ja) 発光素子デバイス及び発光素子デバイスの製造方法
TWI290378B (en) Housing for an optoelectronic component, optoelectronic component and method for producing an optoelectronic component
CN101800271B (zh) 发光二极管封装体及其制造方法
TWM552189U (zh) 紫外光發光二極體封裝結構
JP2009135539A (ja) 固体素子デバイスの製造方法
TW200541029A (en) Led assembly structure

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant