1290378 九、發明說明： 【發明所屬之技術領域】 本發明侧於麟光電子構件之外罩、光電子構件以及製造 該光電子構件之方法。 【先前技術】 ，本發明係關於光電子構件之外罩、光電子構件以及製造 該光電子構件之方法。 文件WO _8 47 49 A2描述—導線架及—外罩，以及利用這 些構件製成之輕射發射構件。其中作為光出口窗之凹槽係於外罩 殼主體内形成，而輻射出口窗之侧侧形成—反射器。 本發明之宗旨係提供用於光電子構件之外罩，尤其是具有多 重使用功能之光電子構件。本發載有此種外罩之光電子構 件，以及製造此種光電子構件之方法。 本發明係利用具有申請專利範圍第i項所述技術特徵之外 罩’申請專利範圍第10項所述技術特徵之光電子構件，以及申請 專利範圍第12項所述技術特徵之製造該光電子齡之方法達成前 述之目的。其更精進之改造係於附屬項中表述。 本發明揭7F用於光電子構件之外罩。此外罩較佳制於 面嵌合之光電子構件。 6 1290378 [發明内容】 於=罩之-實施射，外罩包含—具有晶片嵌合表面之載 半導體晶片。 嵌合至—輪射發射或輻射接收 ^例而s ’載座包含具有魏緣獅之基體。於此實施例中， a載座細表_具有電傳導㈣之_化相互連結。較佳利 用部分載絲Φ作為晶肢合⑼。㈣肢 ，連結。提供至載座之晶片則可經由相互連結，二 、、、口 門^匕外22佳包含—光學元件。光學元件係較佳與載座分 開k，賴載座力雜連接。作為⑼嵌合表面 於載座及光學元件間的分界面。 光學元件較佳至少部分圍繞“嵌合表面。為此，光學元件 具有至；部分圍繞晶片篏合表面之側壁。 於-實施财贿了光電子構件之外罩，其巾該光電子構件 匕3具有“嵌合表面之載座及光學元件，載敍光學元件間之 分界面則位於晶片嵌合表面之平面。 於下文中，本發明之外罩則利用分開建賊座及光學元件， 進而產生各摘設収電子構件。對於相_載座，糊選擇一 特定光學元件，可使構件之補輸出特性符合個的需求。此外， 由於載座及光學元件難分難造，因此有更多的選擇可挑選製 造載座及光學元件之材料系統。 光學兀件較佳於晶㈣合表面後絲，因此，於晶片嵌合表 7 1290378 面的輪射發射構j牛所提供的輕射，至少部分照射到至少光學元件 之分區上。-# 依據外罩之一實施例，至少部分光學元件適合反射部分特定 波長區域之電磁輻射。若光學元件側壁至少包圍晶片嵌合表面， 則接在晶片嵌合表面後之側壁内側，能反射預定波長區之電磁 波。光學元件之輻射輸出特性則由光學元件内壁外形及光學元件 所含材料決定。光學元件則為反射器。 於一實施例中，光學元件係非成像光學集中器（non-imaging optical concentrator)，其中光學元件之光入口實際上為集中器之光 出口。光入口較佳接在晶片嵌合表面後安裝，即光學集中器朝晶 片嵌合表面變窄。於此實施例中，光學集中器之剖面區沿著晶片 肷合表面方向減小。因此，與晶片嵌合表面接合之輻射發射構件 所發出之光束，可經由光學元件減少在通過光學元件時所產生的 光束分歧。 依據至少一實施例，光學元件至少部分形成複合式拋物線集 中器（compound parabolic concentrator，CPC )、複合式橢圓集中器 (compound elliptical concentrator，CEC)、複合式雙曲線集中器 (compound hyperbolic concentrator，CHC)或全内反射（totai internal reflection，TIR)光學系統的形式。舉例而言，在晶片嵌合 區後安裝並具反射性的光學元件内壁，則部分形成複合式拋物線 集中器、複合式橢圓集中器、複合式雙曲線集中器或全内反射光 學系統的形式。此外，光學元件亦可結合至少兩種上述光學元件。 依據至少一實施例，光學元件具有連接光入口及光出口之内 壁，並大體上呈一直線。光學元件内壁進而呈一戴短形金字塔形 8 1290378 或一截短圓錐形。内壁較佳製成具有反射性。 於一實施例中，光學元件係介電質集中器（dielectric concentrator)。側壁係以具有合適折射率之介電材料製成，因此經 由光入口進入之輻射，可利用側壁或内壁邊界表面之全反射，進 而反射至周邊媒介。1290378 IX. Description of the Invention: [Technical Field of the Invention] The present invention is directed to a lining optoelectronic component outer cover, an optoelectronic component, and a method of manufacturing the optoelectronic component. [Prior Art] The present invention relates to an optoelectronic component outer cover, an optoelectronic component, and a method of manufacturing the optoelectronic component. Document WO _8 47 49 A2 describes a lead frame and an outer cover, and a light-emitting member made of these members. The recess as the light exit window is formed in the outer casing body, and the side of the radiation outlet window forms a reflector. SUMMARY OF THE INVENTION It is an object of the present invention to provide an outer cover for an optoelectronic component, particularly an optoelectronic component having a multi-use function. The present invention carries an optoelectronic component of such a cover and a method of making such an optoelectronic component. The present invention relates to an optoelectronic component having the technical feature described in claim 10 of the technical feature of claim [i], and the method of manufacturing the photoelectronic age according to the technical feature of claim 12 Achieve the foregoing objectives. Its more refined transformation is expressed in the subsidiary items. The invention 7F is used for an outer cover of an optoelectronic component. Further, the cover is preferably made of a face-fitted optoelectronic component. 6 1290378 SUMMARY OF THE INVENTION [In the case of a hood-implementation, the cover comprises a semiconductor wafer having a wafer mating surface. Chimeric to - launch or radiation reception ^ and the s ' carrier contains a matrix with a Wei lion. In this embodiment, the a-seat table _ has electrical conduction (four) _ _ mutual connection. Part of the carrier wire Φ is preferably used as the crystal limb (9). (4) Limbs and links. The wafers provided to the carrier can be connected to each other, and the optical components are preferably included. Preferably, the optical component is separated from the carrier by k. As (9) the fitting surface is the interface between the carrier and the optical element. Preferably, the optical element at least partially surrounds the "fitting surface. To this end, the optical element has a side wall that partially surrounds the wafer kneading surface. - The implementation of the optoelectronic component cover, the telecommunication optoelectronic member 3 has "embedded" The surface of the carrier and the optical component, the interface between the optical components is located on the plane of the wafer mating surface. In the following, the outer cover of the present invention utilizes separate thieves and optical components to produce separate electronic components. For the phase carrier, the paste selects a specific optical component to match the complementary output characteristics of the component. In addition, since the carrier and the optical components are difficult to fabricate, there are more options for selecting the material system for the carrier and the optical component. The optical element is preferably formed on the surface of the wafer (4). Therefore, the light radiation provided by the radiation emission surface of the wafer mating surface 7 1290378 is at least partially irradiated onto at least the portion of the optical element. -# According to one embodiment of the housing, at least a portion of the optical component is adapted to reflect electromagnetic radiation in a particular wavelength region. If the side wall of the optical element surrounds at least the wafer fitting surface, the inside of the side wall behind the wafer fitting surface can reflect electromagnetic waves of a predetermined wavelength region. The radiation output characteristics of the optical component are determined by the shape of the inner wall of the optical component and the material contained in the optical component. The optical component is a reflector. In one embodiment, the optical component is a non-imaging optical concentrator, wherein the optical entrance of the optical component is actually the optical exit of the concentrator. Preferably, the light entrance is mounted after the wafer mating surface, i.e., the optical concentrator narrows toward the wafer mating surface. In this embodiment, the cross-sectional area of the optical concentrator decreases along the direction of the wafer kneading surface. Therefore, the light beam emitted from the radiation emitting member bonded to the wafer fitting surface can reduce the beam divergence generated when passing through the optical element via the optical element. According to at least one embodiment, the optical component at least partially forms a compound parabolic concentrator (CPC), a compound elliptical concentrator (CEC), and a compound hyperbolic concentrator (CHC) Or in the form of a totai internal reflection (TIR) optical system. For example, the inner wall of the optical element mounted and reflective behind the wafer mating region is partially formed in the form of a compound parabolic concentrator, a composite elliptical concentrator, a composite hyperbolic concentrator, or a total internal reflection optical system. Furthermore, the optical element can also incorporate at least two of the above optical elements. In accordance with at least one embodiment, the optical element has an inner wall connecting the light entrance and the light exit and is generally in a straight line. The inner wall of the optical element is in turn shaped like a short pyramid 8 1290378 or a short truncated cone. The inner wall is preferably made reflective. In one embodiment, the optical component is a dielectric concentrator. The sidewalls are made of a dielectric material having a suitable refractive index so that the radiation entering through the light entrance can be reflected to the surrounding medium by total reflection from the boundary surface of the sidewall or inner wall.
此外，光學元件亦可為自由形式之光學系統，舉例而言，接 在晶片嵌合表面後安裝之光學元件内壁外形，可符合構件所需輻 射輸出特性。於此實施例中，利用模擬微積分（例如光跡追縱法）， 則能非常精準地蚊内斜形。由於載座及光學元件係分開製 造，因此相當容易製造計算過的光學系統。 、 /此外，光學元件亦可為—魏、透鏡系統、或其他光折射光 學系統。意即至少部分光學元件適合折射所通過之輕射。 / ^於實施例中，光學元件之光出口係接在一附加之光學元件 後女裝’麵加之光學元件適合繞射、折射、或波長轉換從光出 口顯現之電磁铺。尤歧，附蝴絲元錄 兩項功能。 實施例，附加之絲元件可具有呈球面或非球面管曲 杜㈣面。光出表面係呈轉斜巾凸。進而可降低於光學元 件光出口之電磁輻射的分歧。 Ρ 加光學轉之光出表面較佳_成非球狀透鏡的形式。意 此尸形式射光束的光學表面’且並非呈球狀或平面狀。 射發:半導if可具有眾多的外形參數，進而可考量到輻 體曰曰片其她發射表面的尺寸，其中輻射發射半導體 9 1290378 晶片係與晶片嵌/合表面接合的。相反地，點光源之最佳形式係為 球狀透鏡於非點光源，性質（例如減少光束的分歧）則較為 拙劣。 於外罩一實施例中，光學元件包含反射材料。反射材料較佳 適合反射電磁輻射’例如於晶片嵌合表面的輻射發射構件所產生 之電磁輻射。因此’光學元件可包含具有合適色素的塑膠，用以 反射晶片所發射之輻射。此外，亦可利用封裝材料製造光學元件。 • 然而，光學元件也可利用金屬鑄件方式，以反射性材料製造。 此外，光學元件基體可由非反射性材料製造，並於安裝的光 學元件内壁塗上反射性塗層。於此實施例中，塗層包含至少一種 下列材料：氧化鋁、矽化鋁、二氧化矽、氮化矽。利用脈衝化學 氣相蟲日日法（pulsed chemical vapour phase epitaxy，PICVD)，光學 元件内壁塗上一定義厚度之反射性塗層。於此實施例中，塗層不 需覆蓋整個内壁表面。 此外，接近光出口處之光學元件，可製成非反射性的，以避 • 免晶片嵌合表面之半導體晶片所發射的分歧輻射進入光學元件。 反射層或每層之厚度及成份較佳與嵌合於外罩之光電子構件 - 相符。於此實施例中，可最佳化塗層色彩，以成功反射特定波長 之光。光學元件及载座較佳分開製造，以預防在於塗佈過程中， 電絕緣或電傳導材料會覆蓋晶片嵌合表面或載座間的相互連接。 依照外罩之一實施例，光學元件含有可於光學元件及封裝材 料間產生接合的材料，其中封裝材料至少部分包圍嵌合於晶片嵌 合表面之晶片。利用薄膜的形式，亦可在光學元件内壁，提供此 接合材料。若封裝化合物包含矽，含二氧化矽之塗層尤適合增加 1290378 光封 依照光電子構件料之—實關，光學 2。發光轉撕料可轉換位於^嵌合表面之半導體晶片所發 射的至少部分電磁輻射波長。因此，發光轉換材料包含至少一種 螢光粉顆粒。其中以無機螢光粉如稀土元素（mre earths)、摻雜石 權石（doped gamet)，或有機螢光粉例如二萘嵌苯（卿榮 光粉，尤其適合。其他合適之螢光粉則列於文件w〇98/12757中，In addition, the optical component can also be a free-form optical system. For example, the inner wall profile of the optical component mounted after the wafer mating surface can conform to the desired radiation output characteristics of the component. In this embodiment, by using analog calculus (for example, the light trace method), the mosquito can be obliquely very accurately. Since the carrier and the optical components are manufactured separately, it is relatively easy to manufacture a calculated optical system. In addition, the optical component can also be a wei, a lens system, or other photorefractive optical system. This means that at least some of the optical components are suitable for the light passing through the refraction. / ^ In an embodiment, the optical exit of the optical component is attached to an additional optical component and the optical component is adapted to be diffracted, refracted, or wavelength converted from the optical discharge of the optical outlet. You Qi, with the butterfly silk yuan record two functions. In an embodiment, the additional wire element may have a spherical or aspherical tube (four) face. The light exit surface is convexly slanted. In turn, the divergence of electromagnetic radiation at the optical exit of the optical element can be reduced. Ρ The optically-exposed light-emitting surface is preferably in the form of an aspherical lens. It is intended that the corpse forms an optical surface of the beam 'and is not spherical or planar. Emitting: The semi-conducting if can have a large number of shape parameters, which in turn can take into account the dimensions of the other emitting surface of the spoke piece, wherein the radiating-emitting semiconductor 9 1290378 wafer is bonded to the wafer inlay surface. Conversely, the best form of point source is a spherical lens in a non-point source, and the properties (such as reducing the divergence of the beam) are worse. In an embodiment of the outer cover, the optical element comprises a reflective material. The reflective material is preferably adapted to reflect electromagnetic radiation, e.g., electromagnetic radiation generated by a radiation emitting member of the wafer mating surface. Thus the 'optical element' can comprise a plastic having a suitable pigment to reflect the radiation emitted by the wafer. In addition, optical components can also be fabricated using packaging materials. • However, optical components can also be fabricated from reflective materials using metal casting methods. Further, the optical element substrate may be made of a non-reflective material and coated with a reflective coating on the inner wall of the mounted optical element. In this embodiment, the coating comprises at least one of the following materials: alumina, aluminum telluride, cerium oxide, tantalum nitride. The inner wall of the optical element is coated with a reflective coating of defined thickness using pulsed chemical vapour phase epitaxy (PICVD). In this embodiment, the coating does not need to cover the entire inner wall surface. In addition, the optical elements near the exit of the light can be made non-reflective to avoid diverging radiation emitted by the semiconductor wafer on the wafer mating surface from entering the optical element. Preferably, the thickness or composition of the reflective layer or each layer conforms to the optoelectronic component that is embedded in the outer cover. In this embodiment, the color of the coating can be optimized to successfully reflect light of a particular wavelength. Preferably, the optical component and the carrier are separately fabricated to prevent electrical insulation or electrically conductive material from covering the mating surface of the wafer or the interconnection between the carriers during the coating process. In accordance with an embodiment of the housing, the optical component includes a material that creates a bond between the optical component and the encapsulating material, wherein the encapsulating material at least partially surrounds the wafer that is mated to the mating surface of the wafer. This bonding material can also be provided on the inner wall of the optical element in the form of a film. If the encapsulating compound contains antimony, the coating containing cerium oxide is particularly suitable for adding 1290378 light-sealing according to the optoelectronic component material. The luminescent torn material converts at least a portion of the wavelength of electromagnetic radiation emitted by the semiconductor wafer on the mating surface. Therefore, the luminescence conversion material contains at least one phosphor powder particle. Among them, inorganic phosphor powder such as rare earth elements (mre earths), doped gamet, or organic fluorescent powder such as perylene (Qing Rongguang powder, especially suitable. Other suitable phosphor powders are listed In document w〇98/12757,
關於螢光粉之揭示内容則於此併作參考。 經由發光轉換材料，可大致完全轉換原始輻射，或是轉換部 分輻射’並混合原始輕射及轉換之輻射，進而產生落於色度圖（C正 chromaticitydiagram)上所需顏色的可見光，特別是白光。 舉例而言，可以薄膜的形式，於光學元件之内壁提供發光轉 換材料。於此實施例中，螢光轉換層較佳包含發光轉換材料/基材 混合物。舉例而言，基材包含熱固性聚合物（thermosetting polymers)或矽。於光學元件内壁提供大體上一致濃度之發光轉換 材料。然而，在光學元件所定義之區域，可具有較高濃度發光轉 換材料，而於其他光學元件區域則較低。此外，光學元件之部分 區域，亦可不包含任何發光轉換材料。經由定義光學元件内壁的 發光轉換材料濃度，可進而定義電磁波的轉換。 於外罩之一實施例中，光學元件包含熱穩定材料，例如液晶 聚合物（Liquid Crystal Polymer，LCP)、聚醚醚嗣（Polyether ether ketone，PEEK )、或聚鄰苯二甲胺（PPA Polyphthalamide )。 於實施例中，可利用射出鑄形（injectioI1M：noulding)或傳遞模 11 1290378 在光予70件内壁，塗佈一反射性材料。 人的=„件外罩之—實施例中，光學元件係_至少-壓 :的方式，與載座力學性連接。因此，於載座提供至少一凹槽， 座二栓梢’將栓梢壓入凹槽則可使栓梢“ 梢可以相同方式壓入光學元件中的凹槽。 塑:、=梢亦可為光學元件之整體構件，利用射出铸形或傳遞模 =過H製造栓梢與光學構件。此外’可轉的是，栓梢 2載^整體構件’而絲元制具有可與栓難合之凹槽。 先予讀尤其較佳至少兩壓合構件，與載座力學性 立 =有兩定位栓梢之光學元件，可_座力學性接合 二 晶片進行調節。 H目釕於 舉例*言，凹槽可為鑽孔。然而，凹槽之製造時間可同於 Ϊ形元件m紗叙獅方式觀，例如射入 載座可包含至少下列-鋪料：液晶聚合物、__、聚 鄰本一甲胺、陶瓷原料（ceramics)，例如氧化銘（A 銘（A1N)。兩段式設計之優點係可獨立麵载座材料二 材料。因此可依需求最佳化載座材料。 〃子 本發明亦描述具有上述一外罩之光電子構件。 依照光電子構件之至少-實施例，光電子構件具有至+ 光二極體晶片，由發光二極體晶片產生之電磁輻射，、大部二經^ 輻射發射表面朝主要的發射方向顯現。尤其是，光電子^鲈 元全經由輕射發射表面顯現。 ’ 12 1290378 發光二^體/曰片較佳包含蟲晶成長層堆疊。層堆疊係一連串 的蟲晶成長層。層轉較佳包含適合纽f磁波之—活化區段。 輕射發射表面較佳以晶片主要的表面形成，平行延伸或大致上平 行於層堆疊之層。 因此活化區段可具有pn接面（pnjuncti〇n)、雙異質接面構造 (D〇UbleHe__cture)、單一量子井結構㈤味职她^ stmcture)、或多重量子井結構（multiplequantumweli_c_)。 於本發明巾’量子井結構—詞亦包含限制任何電荷載子 (charge carriers)能階進而量子化之結構。特別是，量子井一詞並 不忍私任何篁子化維度規則。因此，包含量子井、量子線及量子 點，以及任何這些結構之組合。 層堆豐較佳係一系列之磊晶成長層，於完成磊晶成長後，移 除成長基材。較佳於與原成長基材相隔甚遠之層堆疊表面提供載 座。移除成長基材後由磊晶成長層列所製造之構件，總稱為薄膜 構件。 薄膜構件之基本原理則於1993年10月18日，由L Schnitzer 等人於應用物理期刊（Appl· Phys· Lett·)第63期第16卷第2174 至2176頁有所描述，有關於薄膜構件之揭示内容，則於此併作參 考0 薄膜發光一極體晶片’具有接近朗伯表面轄射體（Lambert surface radiator)之近似值，因此特別適用於頭燈。 更有利的是，與成長基材相較，則可相對自由選擇薄膜構件 之載座。就部分性質而言，例如傳導性或穩定性，由於成長基材 13 1290378 受到嚴格限制，若高品質層列為 基材晶格。之材料需符合成長 __堆_座。經由實 ^(1 ，arsenide) > 亂化鎵（galhumrutride)、氮切（sm⑽ c 例如藍寶石（Sa_re)、銦或金屬。 及八他材枓’ ^外，較仙具有良好的導齡區純座，因 =射時’活化區段所製造的熱量，可經域座至少部分散熱= 依照-較佳發光二極體晶片之構造，則域座及層堆疊之間 itH。舉例而言，鏡層包含—布拉格鏡浪哪_)或 3金屬鏡層。與布拉格鏡相較，金屬鏡層可包含金、錯化全 =_ge:ium)、銀、銘、翻，並可依反射性較低之方向依附 區別。金屬鏡之反射性亦可高於布拉格鏡。 奴佳於載座之晶片嵌合表面提供發光二極體晶片。發光二極 體晶片可_焊接或哺歡方式雜於晶肢合表面。 於光電子構件之-實施例中，光學元件具有光入口大部分 從發光二_晶片產生的電磁輻射會經由光人π進人光學系統。 於此實施财’光人口較佳沿主要輻射方向，接在發光 片之輻射發射表面後安裝。於此實施例中，發光二極體晶片主要 輻射方向，大體上垂直於輻射發射表面。 光入口的表面區至多為發光二極體晶片輻射發射表面尺寸的 1290378 兩倍，較佳气多》1.5倍’尤以至多U5倍為佳。此種小型反射 光學系統之£入口，可更為顯著的小型化發光二極體安裝。兩段 式外罩結構可相當接近晶片放置光學系統。尤其是，由於與薄膜 、’Ό構發光一極體結合，因此可使輻射在進入光學元件前，沒有戍 幾乎沒有散射損失，進而可增加光電子構件效率。 此外，此種小型光入口尤其適合減少以光學元件發光二極體 晶片’所發射之電磁輻射的立體角（solidangle)，因為所發射輕射 • 的光束圓錐（beam _)之剖面區’面積小到接近半導體之輕射 發射表面。此有助於構件在最小的區域上，投射出最高強度轄射。 光學系統幾何學上更重要賴數為展度（etendue)，即輕射 率。此為光職面區域及光源社體缝出輻射的乘積。維持展 度的結果，會使從擴散輻射源（例如半導體發光二極體）而來的 光無法更祕結’即不再轉向較小範_表面區域上。因此，有 利於輕射光束進入具有最小剖面區的光學元件。 本發明亦描述製造一光學構件之方法。 _ 依照雕之-實關，於第—方法步射，半輸晶片係接 合於載座。載座係如上述，於載絲面提供可與⑼作電接觸連 接之相互連結。半導體晶片較佳為薄膜結構之發光二極體晶片。 於之後的方法步驟中，可利用晶片接合（dieb〇nding)及引線 接合（wirebonding)的方式，將半導體晶片電連接至載座。 接著’將光學元件接合至餘。光學元件較佳為上述之 學元件。光學元件較佳至少—壓合構件純座力學性連接。 然而’光學讀亦可姻_雜接的方式與餘接合。晶片嵌 15 1290378 嵌合晶片之載座表面’較佳介於光學元件及_ 於所述方法中，其中一要素係於嵌合光學元件之前， 接觸=接。不同於載座及光學元件之構件為單件設計，由ς有充 足的空間作為弓丨線接合頭，因此可利用簡易的方式製造接觸連 接，例如引線接合。此外，因不需保留額外的空間用以嵌合晶片， 光予元件可相w近晶片，進而接近晶片之輻射發射表面。因此， # 可製造具有最佳化展度之發光二極體晶片。此即 接觸連接錢，才於載絲給—反㈣。 於接下來的方法步驟巾’亦可糊含有環氧及/祕材料之封 裝化合物’至少部分包酸光二鋪⑻。封裝化合物較佳使至 少部分光學元件及载座之内壁雜。明加光學元件座 力學支撐力。 此述光電子構件之外罩及及光電子構件本身，將依照實施例 及附圖於下文詳述。 【實施方式】 於實施例及附圖中，相同構件係以相同的元件符號表示。所 示構件以及構件間相對尺寸關係不應視為按比例綠製。更確切 地，為了理解之便，因而誇大圖示細部。 ^ 第一圖係顯示此述光電子構件之截面圖。 於載座7的晶片嵌合表面3提供一發光二極體晶片j。於此實 施例中，外部導電終端部5a係與载座7之熱終端部6電連接。舉 1290378 例而言’發光二極體晶片1則煜 6電連接至夕卜、4電終端部5a。 “、、終端部6 ’並經由熱終端部 較佳將熱終端部6 _成崎 載座7之間，形成具有足夠強度的鉗夾連接進;端部6及 鍛接或黏附接合的方式，連接熱終端部6及载座7。焊接、 1時’熱終端部6可作為熱傳導元件，以於载座7 5 6 ^ 奸营㈣φ *』為熱槽之冷卻主體(未顯示）熱接觸。於 此實施例巾，触7可設計解線架。 啊於 此外，晶片1可經由連接線4電連接至外部導電終端部兄。 Z載座7提供-光學播2。光學元件2可綱壓合、焊接、 黏附或:、他接合技術’與載座7接合。於此實施例中，介於載座7 及光學讀2之分界線15係落在晶肢合表面3。 光學元件可為如上述之反射光學系統。因此，舉例而言作 為反射光學系統之光學元件内壁M，可由複合式拋物線集中器光 學系統方法製造。_内壁M之反射及/或全反射，可以反射發 光二極體晶片所輸出之電磁輻射。 此外’封裝化合物8(p0tting compound)至少部分包圍晶片1。 封裝化合物8 —方面穩定了載座7及光學元件2間的力學性連接， 另一方面供給發光二極體晶片丨力學性的保護。 發光轉換材料9可併入封裝化合物8中，用以至少部分轉換 發光二極體晶片1所輸出之電磁輻射的波長。亦可於發光二極體 17 1290378 晶片1之轄射表面，以_的形式，提供發光轉換材料。此 外’或在光學元件（反射器）2之内壁14± ’以薄膜的形式，提 供發光轉換材料。 第一圖係顯示此述光電子構件第二實施例之截面圖。於此實 鉍例中’在女裝發光二極體晶片丨之後，於光學元件2之内壁Μ 上提供-塗層1〇 ’該塗層可包含至少—下列材料：發_換材料、 反射材料、適合增加光學元件2之_ 14及封裝化合物8間黏合The disclosure of the phosphor powder is hereby incorporated by reference. Via the luminescence conversion material, the original radiation can be substantially completely converted, or the partial radiation can be converted and the original light and converted radiation can be mixed to generate visible light, in particular white light, which falls on the desired color on the chromaticity diagram (C positive chromaticity diagram). . For example, the luminescent conversion material can be provided on the inner wall of the optical element in the form of a film. In this embodiment, the phosphor conversion layer preferably comprises a luminescence conversion material/substrate mixture. For example, the substrate comprises thermosetting polymers or hydrazine. A substantially uniform concentration of luminescence conversion material is provided on the inner wall of the optical element. However, in the area defined by the optical element, there may be a higher concentration of luminescent conversion material and lower in other optical element areas. In addition, some regions of the optical component may not contain any luminescence conversion material. The conversion of electromagnetic waves can be further defined by defining the concentration of the luminescence conversion material on the inner wall of the optical element. In one embodiment of the outer cover, the optical element comprises a thermally stable material such as Liquid Crystal Polymer (LCP), Polyether ether ketone (PEEK), or PPA Polyphthalamide. . In an embodiment, a reflective material can be applied to the 70 inner walls by means of an injection molding (injectioI1M: noulding) or a transfer mold 11 1290378. In the embodiment, the optical element is at least-pressured, and is mechanically connected to the carrier. Therefore, at least one groove is provided in the carrier, and the second tip of the seat is pressed. The recess allows the tip of the tip to be pressed into the groove in the optical element in the same manner. Plastic:, = tip can also be an integral component of the optical component, using the injection molding or transfer die = over H to manufacture the tip and optical components. Further, it can be rotated that the tip end 2 carries the integral member and the wire element has a groove which is difficult to engage with the bolt. It is especially preferred to read at least two of the press-fit members in advance, and to mechanically stand with the mount = an optical element having two locating tips, which can be mechanically bonded to the second wafer for adjustment. H. For example, the groove can be drilled. However, the manufacturing time of the groove can be the same as that of the Ϊ-shaped element m yarn, for example, the injection carrier can contain at least the following - paving: liquid crystal polymer, __, poly-n-methylamine, ceramic raw material (ceramics ), for example, Oxide (A1N). The advantage of the two-stage design is that it can be used as a separate surface carrier material. Therefore, the carrier material can be optimized according to the requirements. The present invention also describes a housing having the above-mentioned outer cover. Photoelectron member. According to at least one embodiment of the optoelectronic component, the optoelectronic component has a +-diode wafer, the electromagnetic radiation generated by the light-emitting diode wafer, and the majority of the radiation emitting surface appears toward the main emission direction. Yes, the photoelectrons are all visible through the surface of the light-emitting surface. ' 12 1290378 The light-emitting diode/strip preferably contains a stack of insect crystal growth layers. The layer stack is a series of insect crystal growth layers. F-magnetic-active section. The light-emitting surface is preferably formed by the major surface of the wafer, extending parallel or substantially parallel to the layer stack. Thus the activation section can have a pn junction (pnjunct I〇n), double heterojunction structure (D〇UbleHe__cture), single quantum well structure (five) her ^ stmcture), or multiple quantum well structure (multiplequantumweli_c_). The term "quantum well structure" of the present invention also encompasses structures that limit the energy level of any charge carriers and then quantize. In particular, the term quantum well does not endure any dice-like dimensional rules. Therefore, quantum wells, quantum wires, and quantum dots, as well as combinations of any of these structures, are included. The layer stack is preferably a series of epitaxial growth layers, and after the epitaxial growth is completed, the growth substrate is removed. Preferably, the layer stacking surface is provided at a distance from the original growth substrate to provide a carrier. The members manufactured by the epitaxial growth layer after removal of the grown substrate are collectively referred to as film members. The basic principle of the film member is described on October 18, 1993 by L Schnitzer et al. in the Journal of Applied Physics (Appl. Phys. Lett.), No. 63, Vol. 16, pp. 2174 to 2176. The disclosure is hereby incorporated by reference. 0 The thin film light-emitting diode wafer has an approximate value close to the Lambert surface radiator and is therefore particularly suitable for headlamps. More advantageously, the carrier of the film member can be relatively freely selected as compared to a growing substrate. For some properties, such as conductivity or stability, the growth of the substrate 13 1290378 is severely limited if the high quality layer is listed as the substrate lattice. The material needs to conform to the growth __ heap_ seat. Via 真^(1,arsenide) > chaotic gallium (galhumrutride), nitrogen cut (sm(10) c such as sapphire (Sa_re), indium or metal. and octagonal 枓' ^, the celestial has a good lead age Block, because the heat generated by the 'activation section' can be at least partially dissipated via the domain seat = according to the structure of the preferred light-emitting diode wafer, the domain mount and the layer stack between itH. For example, the mirror The layer contains - Bragg mirror _) or 3 metal mirror layers. Compared with the Bragg mirror, the metal mirror layer can contain gold, mis-quantized =_ge:ium), silver, inscription, and flip, and can be distinguished by the direction of lower reflectivity. Metal mirrors can also be more reflective than Bragg mirrors. Nujia provides a light-emitting diode wafer on the wafer mating surface of the carrier. The light-emitting diode wafer can be mixed or soldered to the surface of the crystal limb. In an embodiment of the optoelectronic component, the optical component has a light entrance. Most of the electromagnetic radiation generated from the light-emitting diode is incident on the optical system via the light human π. In this implementation, the light population is preferably installed along the main radiation direction and connected to the radiation emitting surface of the illuminating sheet. In this embodiment, the light emitting diode wafer has a predominantly radial direction, substantially perpendicular to the radiation emitting surface. The surface area of the light entrance is at most twice the size of the 1290378 of the radiation emitting surface of the light-emitting diode wafer, preferably more than 1.5 times', especially more than 5 times. The entry of such a small reflective optical system allows for a more significant miniaturized LED installation. The two-piece housing structure can be placed relatively close to the wafer placement optical system. In particular, since it is combined with the thin film and the ?-structured light-emitting body, radiation can be transmitted to the optical element without 戍 with almost no scattering loss, thereby increasing the efficiency of the optoelectronic component. In addition, such a small light entrance is particularly suitable for reducing the solid angle of the electromagnetic radiation emitted by the optical element LED chip, since the area of the beam cone (beam _) of the emitted light beam is small. To the light-emitting surface of the semiconductor. This helps the component project the highest intensity trajectory on the smallest area. The more important geometrical importance of the optical system is the etendue, the light rate. This is the product of the radiation surface area and the radiation from the light source community. As a result of maintaining the spread, the light from the diffused radiation source (e.g., the semiconductor light-emitting diode) cannot be more secreted, i.e., no longer turns to the smaller surface area. Therefore, it is advantageous for the light beam to enter the optical element having the smallest profile area. The invention also describes a method of making an optical component. _ According to the eagle-real, in the first method, the semi-transmission chip is connected to the carrier. As described above, the carrier is provided on the carrier surface to be interconnected with (9) for electrical contact. The semiconductor wafer is preferably a light-emitting diode wafer of a thin film structure. In a subsequent method step, the semiconductor wafer can be electrically connected to the carrier by means of die bonding and wire bonding. The optical element is then joined to the remainder. The optical element is preferably the above-described element. Preferably, the optical element is at least - the press-fit member is mechanically connected in a pure seat. However, the optical reading can also be combined with the remainder. Wafer embedding 15 1290378 The seating surface of the mating wafer is preferably interposed between the optical component and the method, one of which is before the mating optical component, contact = connected. Unlike the components of the carrier and the optical component, which are designed in one piece, the contact connection, such as wire bonding, can be manufactured in a simple manner by having a sufficient space as the bowing wire bonding head. In addition, since there is no need to reserve additional space for mating the wafer, the light-emitting elements can be in close proximity to the wafer, thereby approaching the radiation emitting surface of the wafer. Therefore, it is possible to manufacture a light-emitting diode wafer having an optimized spread. This is the contact connection money, only the wire is given - anti (four). In the next method step, the packaged compound containing the epoxy and/or secret material may be at least partially coated with acid (2). Preferably, the encapsulating compound is such that at least a portion of the optical component and the inner wall of the carrier are intermingled. Mingjia optical component seat Mechanical support force. The outer cover of the optoelectronic component and the optoelectronic component itself will be described in detail below in accordance with the embodiments and the drawings. [Embodiment] In the embodiments and the drawings, the same components are denoted by the same reference numerals. The components shown and the relative dimensional relationships between the components should not be considered to be proportional green. Rather, for the sake of understanding, the illustrated details are exaggerated. ^ The first figure shows a cross-sectional view of the optoelectronic component described herein. A light emitting diode chip j is provided on the wafer fitting surface 3 of the carrier 7. In this embodiment, the external conductive terminal portion 5a is electrically connected to the thermal termination portion 6 of the carrier 7. In the case of 1290378, the light-emitting diode chip 1 is electrically connected to the electric terminal portion 5a. ", the terminal portion 6' is preferably connected between the hot terminal portion 6_Sakizaki carrier 7 via the thermal termination portion to form a clamp having sufficient strength; the end portion 6 and the forging or adhesive bonding method are connected. The heat termination portion 6 and the carrier 7 are welded. At 1 o'clock, the hot termination portion 6 can serve as a heat conduction element for thermal contact with the cooling body (not shown) of the hot runner at the carrier (4) φ * 』. In this embodiment, the touch panel 7 can be designed as a wire rack. In addition, the wafer 1 can be electrically connected to the external conductive terminal brother via the connecting wire 4. The Z carrier 7 provides - optical broadcast 2. The optical component 2 can be pressed together. , soldering, adhering or: his bonding technique 'engages with the carrier 7. In this embodiment, the boundary line 15 between the carrier 7 and the optical reading 2 falls on the crystallized surface 3. The optical component can be as The above-mentioned reflective optical system. Thus, for example, the inner wall M of the optical element as a reflective optical system can be manufactured by a hybrid parabolic concentrator optical system method. _ Reflection and/or total reflection of the inner wall M can reflect the light emitting diode chip The electromagnetic radiation output. In addition 'packaging compound 8 (p0t The ting compound at least partially surrounds the wafer 1. The encapsulating compound 8 - stabilizes the mechanical connection between the carrier 7 and the optical element 2, and on the other hand supplies the mechanical protection of the luminescent diode chip. Into the encapsulating compound 8, for at least partially converting the wavelength of the electromagnetic radiation outputted by the LED chip 1. The illuminating conversion material may also be provided in the form of _ on the illuminating surface of the photodiode 17 1290378 wafer 1. In addition, or in the form of a film on the inner wall 14± of the optical element (reflector) 2, a luminescence conversion material is provided. The first figure shows a cross-sectional view of a second embodiment of the optoelectronic component described herein. 'After the female light-emitting diode wafer crucible, a coating 1 is provided on the inner wall 光学 of the optical element 2. The coating may comprise at least the following materials: hair-changing material, reflective material, suitable for adding the optical element 2 _ 14 and encapsulating compound 8 bonding
的材料。例如，當使用含树膠封裝化合物8時，則適用微鹽。 塗層10較佳包含至少兩種上述材料。 此外’封裝化合物8可包含具有—定義曲率之輻射發射表面 8a，進而戦-額外如透鏡般的光學元件。因此，封裝化合 物8及輻射發射表面8a之折射率，可以確定光電子構件 = 射發射特徵。 若載座7所使用的材料具有良好的熱傳導性質，則不需使用 分離式熱終端部6。於此實施例中，_ 7則包含封裝材料。 第二圖係顯示此述光電子構件第三實施例之剖賴。於此實 施例中，可於電路板12提供光電子構件。電路板12係一印刷電 路板（prnited circuit board，PCB)或金屬芯（metalc〇re)印刷電路 板。利用熱及電連接，例如利用焊接步驟，連接構件及電路板η。 於此實施财，電路板12則作為—冷卻域，㈣發光二極體晶 片1從熱終端部6用以消散熱量的熱槽。 -附加的光學藉u係安裝於封裝化合物8之輕射發射表面 8a之後。附加的光學元件n可為繞射、折射、全像攝影、或菲淫 爾光學（Fresneloptical)系統’以一特定方式，確定構件之輕射射 18 1290378 特徵 發光此光學元件11可包含發光轉換材料9,靠轉換 毛先:極體曰曰片所輪出之電磁轄射的波長。 件13 ’關糾对力學性敎連接光學元 二==此實施例中，栓梢13可為光學元件2的一部份。 補中2 或載座7之整體構件。於此實 _===：Γ.9姻增她張優 及他的修改 Τ之組合或新技術特徵，皆不脫:本創作;等= 洛在本發明於隨附申請專利範圍及其均等物所界定的範嘴之中 7 【圖式簡單說明】 第-圖係顯示此述光電子構件第一實施例之概略剖面圖。 第-圖係顯示此述光電子構件第二實施例之概略剖面圖。 第三圖係顯示此述光電子構件第三實施例之概略剖面圖。 【主要元件符號說明】 1發光二極體晶片 2光學元件 3晶片嵌合表面 19 1290378 4連接線 5a外部導電終端部 5b外部導電終端部 6熱終端部 7載座 8封裝化合物 8a輻射發射表面 9發光轉換材料 10塗層 11光學元件 12電路板 13栓梢 14内壁 15分界線s material. For example, when a compound 8 containing a gum is used, a micro salt is applied. Coating 10 preferably comprises at least two of the above materials. Further, the encapsulating compound 8 may comprise an optical element having a radiation-emitting surface 8a defining a curvature, and further an extra-lens-like optical element. Therefore, the refractive index of the packaged compound 8 and the radiation emitting surface 8a can be determined as the optoelectronic component = emission characteristics. If the material used for the carrier 7 has good heat transfer properties, the separate thermal termination portion 6 is not required. In this embodiment, _ 7 includes an encapsulating material. The second figure shows a cross section of the third embodiment of the optoelectronic component. In this embodiment, optoelectronic components can be provided on circuit board 12. The circuit board 12 is a printed circuit board (PCB) or a metal core printed circuit board. The connecting member and the circuit board η are connected by thermal and electrical connections, for example by means of a soldering step. In this implementation, the circuit board 12 serves as a cooling region, and (4) the heat-emitting diodes 1 are used to dissipate heat from the heat-terminal portion 6. - An additional optical system is mounted after the light-emitting surface 8a of the encapsulating compound 8. The additional optical element n can be a diffraction, refraction, holographic, or Fresnel optical system. In a particular manner, the light projecting of the component is determined. 18 1290378 Characteristic illumination. The optical element 11 can comprise a luminescence conversion material. 9, by the conversion of the first: the wavelength of the electromagnetic radiation of the polar body. Piece 13 'Correction of Mechanically Connected Optical Element II == In this embodiment, the tip 13 can be part of the optical element 2. Complement 2 or the integral member of the carrier 7. In this case _===: Γ.9 marriage increases her combination of Zhang You and his revised 或 or new technical features, are not off: this creation; etc. = Luo in the invention in the scope of the accompanying application and its equal Among the vanes defined by the object 7 [Simplified description of the drawings] The first figure shows a schematic cross-sectional view of the first embodiment of the optoelectronic component. Fig. 1 is a schematic cross-sectional view showing a second embodiment of the optoelectronic component. The third figure shows a schematic cross-sectional view of a third embodiment of the optoelectronic component described herein. [Main component symbol description] 1 light-emitting diode wafer 2 optical element 3 wafer fitting surface 19 1290378 4 connection line 5a external conductive terminal portion 5b external conductive terminal portion 6 thermal terminal portion 7 carrier 8 package compound 8a radiation emitting surface 9 Luminescent conversion material 10 coating 11 optical element 12 circuit board 13 spigot 14 inner wall 15 boundary line