DE102010024545B4 - Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements - Google Patents

Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements Download PDF

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Publication number
DE102010024545B4
DE102010024545B4 DE102010024545.3A DE102010024545A DE102010024545B4 DE 102010024545 B4 DE102010024545 B4 DE 102010024545B4 DE 102010024545 A DE102010024545 A DE 102010024545A DE 102010024545 B4 DE102010024545 B4 DE 102010024545B4
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Prior art keywords
optical element
semiconductor chip
semiconductor
until
radiation
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DE102010024545.3A
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German (de)
English (en)
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DE102010024545A1 (de
Inventor
Dr. Kruppa Michael
Simon Jerebic
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Priority to DE102010024545.3A priority Critical patent/DE102010024545B4/de
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to CN201180031248.9A priority patent/CN102947959B/zh
Priority to CN201610015092.XA priority patent/CN105529392B/zh
Priority to JP2013515795A priority patent/JP6315988B2/ja
Priority to US13/703,180 priority patent/US9368699B2/en
Priority to PCT/EP2011/058580 priority patent/WO2011160913A1/de
Priority to EP11723914.5A priority patent/EP2586069B1/de
Priority to KR1020137001259A priority patent/KR20130023347A/ko
Priority to KR1020177033700A priority patent/KR20170131724A/ko
Priority to TW100121392A priority patent/TWI497776B/zh
Priority to TW104124265A priority patent/TWI545809B/zh
Publication of DE102010024545A1 publication Critical patent/DE102010024545A1/de
Priority to US15/146,984 priority patent/US9634207B2/en
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Publication of DE102010024545B4 publication Critical patent/DE102010024545B4/de
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/00009—Production of simple or compound lenses
    • B29D11/00432—Auxiliary operations, e.g. machines for filling the moulds
    • B29D11/00442—Curing the lens material
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/095—Refractive optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Ophthalmology & Optometry (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
DE102010024545.3A 2010-06-22 2010-06-22 Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements Active DE102010024545B4 (de)

Priority Applications (12)

Application Number Priority Date Filing Date Title
DE102010024545.3A DE102010024545B4 (de) 2010-06-22 2010-06-22 Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
KR1020177033700A KR20170131724A (ko) 2010-06-22 2011-05-25 반도체 소자 그리고 반도체 소자를 제조하기 위한 방법
JP2013515795A JP6315988B2 (ja) 2010-06-22 2011-05-25 半導体構成素子の製造方法
US13/703,180 US9368699B2 (en) 2010-06-22 2011-05-25 Semiconductor component containing a highly refractive polymer material
PCT/EP2011/058580 WO2011160913A1 (de) 2010-06-22 2011-05-25 Halbleiterbauelement und verfahren zur herstellung eines halbleiterbauelements
EP11723914.5A EP2586069B1 (de) 2010-06-22 2011-05-25 Verfahren zur herstellung eines halbleiterbauelements
CN201180031248.9A CN102947959B (zh) 2010-06-22 2011-05-25 半导体器件和用于制造半导体器件的方法
CN201610015092.XA CN105529392B (zh) 2010-06-22 2011-05-25 半导体器件和用于制造半导体器件的方法
KR1020137001259A KR20130023347A (ko) 2010-06-22 2011-05-25 반도체 소자 그리고 반도체 소자를 제조하기 위한 방법
TW100121392A TWI497776B (zh) 2010-06-22 2011-06-20 半導體組件之製造方法
TW104124265A TWI545809B (zh) 2010-06-22 2011-06-20 半導體組件
US15/146,984 US9634207B2 (en) 2010-06-22 2016-05-05 Semiconductor component and method of producing a semiconductor component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102010024545.3A DE102010024545B4 (de) 2010-06-22 2010-06-22 Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements

Publications (2)

Publication Number Publication Date
DE102010024545A1 DE102010024545A1 (de) 2011-12-22
DE102010024545B4 true DE102010024545B4 (de) 2022-01-13

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DE102010024545.3A Active DE102010024545B4 (de) 2010-06-22 2010-06-22 Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements

Country Status (8)

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US (2) US9368699B2 (enExample)
EP (1) EP2586069B1 (enExample)
JP (1) JP6315988B2 (enExample)
KR (2) KR20130023347A (enExample)
CN (2) CN105529392B (enExample)
DE (1) DE102010024545B4 (enExample)
TW (2) TWI545809B (enExample)
WO (1) WO2011160913A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010024545B4 (de) 2010-06-22 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
DE102014108368A1 (de) * 2014-06-13 2015-12-17 Osram Opto Semiconductors Gmbh Oberflächenmontierbares Halbleiterbauelement und Verfahren zu dessen Herstellung

Citations (6)

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DE10023353A1 (de) 2000-05-12 2001-11-29 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung
WO2006089540A2 (de) 2005-02-28 2006-08-31 Osram Opto Semiconductors Gmbh Verfahren zur herstellung eines optischen und eines strahlungsemittierenden bauelementes und optisches sowie strahlunsemittierendes bauelement
WO2008064070A1 (en) 2006-11-17 2008-05-29 3M Innovative Properties Company Optical bonding composition for led light source
US20080210965A1 (en) 2006-10-11 2008-09-04 Chuan-Yu Hung Light-emitting diode incorporation the packing nano particules with high refractive index
US20090272996A1 (en) 2008-05-02 2009-11-05 Cree, Inc. Encapsulation for phosphor-converted white light emitting diode
US20100044640A1 (en) 2007-06-12 2010-02-25 Ajjer Llc High refractive index materials and composites

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JP3991612B2 (ja) 2001-04-09 2007-10-17 日亜化学工業株式会社 発光素子
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DE10023353A1 (de) 2000-05-12 2001-11-29 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung
WO2006089540A2 (de) 2005-02-28 2006-08-31 Osram Opto Semiconductors Gmbh Verfahren zur herstellung eines optischen und eines strahlungsemittierenden bauelementes und optisches sowie strahlunsemittierendes bauelement
US20080210965A1 (en) 2006-10-11 2008-09-04 Chuan-Yu Hung Light-emitting diode incorporation the packing nano particules with high refractive index
WO2008064070A1 (en) 2006-11-17 2008-05-29 3M Innovative Properties Company Optical bonding composition for led light source
US20100044640A1 (en) 2007-06-12 2010-02-25 Ajjer Llc High refractive index materials and composites
US20090272996A1 (en) 2008-05-02 2009-11-05 Cree, Inc. Encapsulation for phosphor-converted white light emitting diode

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ZHOU, Yan [et al.]: One-component, low-temperature, and fast cure epoxy encapsulant with high refractive index for LED applications. In: IEEE Transactions on Advanced Packaging, Vol. 31., 2008, Nr. 3, S. 484-489.

Also Published As

Publication number Publication date
US20130240929A1 (en) 2013-09-19
CN102947959A (zh) 2013-02-27
KR20170131724A (ko) 2017-11-29
CN105529392B (zh) 2019-10-18
TWI497776B (zh) 2015-08-21
KR20130023347A (ko) 2013-03-07
CN105529392A (zh) 2016-04-27
TWI545809B (zh) 2016-08-11
JP2013534728A (ja) 2013-09-05
JP6315988B2 (ja) 2018-04-25
EP2586069A1 (de) 2013-05-01
US9634207B2 (en) 2017-04-25
DE102010024545A1 (de) 2011-12-22
US20160247986A1 (en) 2016-08-25
TW201541673A (zh) 2015-11-01
WO2011160913A1 (de) 2011-12-29
CN102947959B (zh) 2016-01-27
TW201208148A (en) 2012-02-16
EP2586069B1 (de) 2017-03-01
US9368699B2 (en) 2016-06-14

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