EP2067180A2 - Optisches element, strahlungsemittierendes bauelement und verfahren zur herstellung eines optischen elements - Google Patents
Optisches element, strahlungsemittierendes bauelement und verfahren zur herstellung eines optischen elementsInfo
- Publication number
- EP2067180A2 EP2067180A2 EP07817578A EP07817578A EP2067180A2 EP 2067180 A2 EP2067180 A2 EP 2067180A2 EP 07817578 A EP07817578 A EP 07817578A EP 07817578 A EP07817578 A EP 07817578A EP 2067180 A2 EP2067180 A2 EP 2067180A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- optical element
- radiation
- base body
- base
- emitting component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 80
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 73
- 239000004065 semiconductor Substances 0.000 claims description 36
- 239000000945 filler Substances 0.000 claims description 32
- 230000005855 radiation Effects 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 8
- 229920001296 polysiloxane Polymers 0.000 claims description 6
- 239000012815 thermoplastic material Substances 0.000 claims description 6
- 238000001746 injection moulding Methods 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 125000006850 spacer group Chemical group 0.000 description 5
- -1 for example Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000004873 anchoring Methods 0.000 description 3
- 238000004382 potting Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000007493 shaping process Methods 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229920001169 thermoplastic Polymers 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
Definitions
- the invention relates to an optical element and a radiation-emitting component which has an optical element. Furthermore, the invention relates to a method for producing an optical element.
- the published patent application DE 199 45 675 A1 discloses a surface-mountable LED housing in which an LED chip is arranged. The chip is followed by a lens containing a thermoplastic material.
- thermal stress which occurs, for example, during a soldering process, involves the risk of deformation of the lens and, moreover, the risk of clouding of the lens. These influences can adversely affect the optical properties of the lens.
- a further object of the present invention is to provide a radiation-emitting component which, despite thermal stresses, has comparatively stable optical properties. This object is achieved by a radiation-emitting component according to claim 19.
- Another object is to provide a method by which the optical element can be easily manufactured. This object is achieved by a method according to claim 29.
- An optical element according to the invention has a base body which contains a base material and a filler body which contains a filler material, wherein the filler body adheres to the base body.
- the optical element is provided for shaping radiation.
- the optical element may be an imaging optic.
- the main body forms an outer region of the optical element, while the filler body forms an inner region of the optical element.
- the base material is different from the filler. This has the advantage of being dependent on the different requirements made of the main body and the filler are placed, a suitable material can be used.
- the base body has a cavity, which is filled with the filling material, wherein the shape of the filling body is determined by the cavity.
- the base body and filler are irreversibly miteinader connected.
- the optical element has two regions which can differ in their optical properties.
- the base body has the shape of a rotation body.
- the filler body may also have the shape of a rotational body.
- a contour of the optical element may be approximately dome-like.
- the contour of the basic body can thereby at least partially resemble a spherical or elliptical segment.
- the base body may be shaped approximately in the manner of a spherical shell segment.
- the base body may have the shape of a hemispherical shell with an opening region for filling the base body with filling material.
- the filler then has approximately the shape of a hemisphere inside.
- the shape of the filling body can approximately correspond to an inverted truncated cone, which is surrounded in a ring-like manner by the basic body.
- the filler body and the base body have a common axis of symmetry.
- the opening region preferably also has this axis of symmetry.
- the opening area forms together with a Opening area surrounding surface of the body a radiation passage area of the optical element.
- the radiation passage area may have a concavely curved or flat partial area and a convexly curved partial area surrounding the concavely curved partial area at a distance from the optical axis, the optical axis extending through the concavely curved partial area.
- the opening area may be concavely curved and the surrounding surface convexly curved.
- the filling material is permeable to the radiation to be formed. This has the advantage that the radiation can pass through the filling body and the filling body can thus contribute to beam shaping.
- the filler material contains transparent potting compounds or resins.
- the filling material may contain a silicone material.
- a silicone gel can be used which proves to be advantageous in terms of cycle stability, heating in the soldering process, aging stability and radiation resistance, especially under thermal or mechanical loads. Under the action of heat, the opening area allows expansion of the filling material. Since the main body forms the optically more critical region of the optical element, a deformation of the filler leads to a negligible change in the optical properties of the optical element.
- Further suitable filling materials are, for example, hybrid materials such as, for example, mixtures of epoxy resins and silicone resins, since they have the advantages of shorter curing times and better mold release properties over silicone resins and the advantage of increased UV stability over epoxy resins.
- the base material for the radiation to be formed is permeable.
- the radiation can pass through the body and the body can thus contribute to the beam shaping.
- the base material may contain glass.
- a glass material is used which is stable at temperatures greater than 300 0 C, that is, at these temperatures neither material changes, such as cloudiness or discoloration, nor deformations are to be feared. These temperatures can be several hours.
- the base material may contain a plastic material.
- the base material is a thermoplastic.
- thermoplastics for example, polycarbonates (PC) or polymethacrylmethylimides (PMMI) are suitable.
- the optical element according to the invention may be a refractive, diffractive or dispersive element.
- the optical element which is part of a radiation-emitting semiconductor component, for example, at temperatures between 200 0 C and 300 ° C solderable. In this temperature range are neither material changes, such as cloudiness or discoloration, nor deformation to fear. Typically, these temperatures occur for a few minutes.
- An inventive radiation-emitting component has an optical element as described so far and at least one radiation-emitting semiconductor body which is embedded in the filler.
- an optical effect but also a protective effect for the semiconductor body can be achieved by means of the filling body.
- the filler can serve as a potting.
- the semiconductor body has a semiconductor material based on nitride compound semiconductors.
- nitride compound semiconductors in the present context means that the active epitaxial layer sequence or at least one layer thereof comprises a nitride III / V compound semiconductor material, preferably AlnGamInx-n-mN, where O ⁇ n ⁇ 1.0 ⁇ ra ⁇ 1 and n + m ⁇ 1.
- this material does not necessarily have to have a mathematically exact composition according to the above formula, but rather it may have one or more dopants as well as additional constituents which have the characteristic physical properties of Al n Ga m Ini_ n - m
- the above formula contains only the essential components of the crystal lattice (Al, Ga, In, N), even though these may be partially replaced by small amounts of other substances.
- the refractive index of the filling material is based on the refractive indices of the base material and further the Semiconductor material adapted.
- the filler has a refractive index of 1.3 to 1.7.
- the semiconductor body is a thin-film light-emitting diode chip.
- a thin-film light-emitting diode chip is characterized in particular by at least one of the following characteristic features:
- a reflective layer is applied or formed which reflects back at least part of the electromagnetic radiation generated in the epitaxial layer sequence;
- the epitaxial layer sequence has a thickness in the range of 20 microns or less, in particular in the range of 10 microns;
- the epitaxial layer sequence contains at least one semiconductor layer with at least one surface which has a mixing structure which ideally leads to an approximately ergodic distribution of the light in the epitaxial epitaxial layer sequence, i. it has as ergodically stochastic scattering behavior as possible.
- the radiation-emitting semiconductor body is arranged on a support.
- the carrier may be a plate containing about a ceramic material.
- the carrier may have electrical connection regions for the power supply of the semiconductor body.
- the contour of the base body may comprise two mutually facing "S ⁇ same, which means that the contour line includes two inflection points. Only one edge-side end of the main body rests on the carrier, while the rest of the main body rises above the carrier.
- the contour of the main body can be identical to two circle segments facing one another, in particular two quarter circles.
- the basic body is connected by means of the filling material with the carrier.
- the main body adheres to the carrier by means of the filling material.
- an adhesive or the application of an adhesive can be saved.
- the base body has on a side facing the carrier at least one protruding fastening element for fastening the optical element.
- the fastening element may be formed, for example, in the manner of a pin.
- the fastening element can serve for anchoring the optical element in the carrier or a further element downstream of the carrier, for example a heat sink.
- the carrier or the further element has a suitable insertion device for the mechanical anchoring of the fastening element.
- a spacer can be arranged between the optical element and the carrier, which preferably surrounds the semiconductor body in a ring-like manner.
- the spacer may prevent excessive heating of the optical element.
- the ring-like spacer can serve as a filling frame for embedding the semiconductor body in filling material.
- a heat sink is provided as a further element, which serves for the removal of heat from the component and contains, for example, Al. This reduces the risk of deformations or material changes of the optical element and thus the risk of impairment of the optical properties such as radiation characteristics or coupling-out efficiency.
- the radiation-emitting component preferably has an SMT (Surface Mounted Technology) design. This allows a comparatively simple installation of the device.
- SMT Surface Mounted Technology
- the component has at least three semiconductor bodies, which respectively emit red, green and blue light.
- the generated light can be mixed by means of the optical element.
- the radiation-emitting device according to the invention is suitable for backlighting and illumination purposes.
- the optical element according to the invention can be produced in a simple manner.
- the base body is initially formed, which has a fillable cavity.
- the filler material containing, for example, a gel can be filled by means of an opening portion of the base body, whereby the filler body is formed.
- the main body by means of a
- Deep drawing process can be molded from a glass material.
- the optical properties of the optically critical body can be substantially maintained by the thermal stability of the glass material even with strong heat.
- the main body can be produced by means of an injection molding or transfer molding process from a plastic material.
- the base body may be made of a thermoplastic material, while the filler body is formed of a silicone material.
- the filling material When heated, the filling material can advantageously expand in the direction of the opening area.
- the already manufactured basic body is applied to the carrier.
- the size of the opening region can be adapted to the number of semiconductor bodies to be mounted in this way be that an assembly of the semiconductor body through the opening area is possible therethrough.
- FIG. 1 shows a schematic cross-sectional view of a first exemplary embodiment of a radiation-emitting component according to the invention
- Figure 2 is a schematic cross-sectional view of a second embodiment of a radiation-emitting device according to the invention.
- Radiation-emitting component 10 an optical element 1 and two radiation-emitting semiconductor body 4 are shown in cross-section.
- the semiconductor bodies 4 are embedded in a filling body 3 which has a filling material 7.
- the filler 3 is only partially surrounded by a base body 2.
- the main body 2 has an opening region 6.
- the opening region 6 serves for filling the main body 2 with the filling material 7, which is preferably gel-like during the filling.
- the main body 2 is dimensionally stable.
- the main body 2 and the carrier 5 define a cavity which is filled with the filling material 7. As a result, the filling body 3 is formed.
- the filler 3 is permeable to radiation generated by the semiconductor bodies 4.
- the filling material 7, which is arranged between the base body 2 and the carrier 5, in this embodiment has adhesion and can thus serve as an adhesive, which holds the base body 2 and the optical element 1 and the carrier 5 together.
- the filler 7 contains a silicone gel.
- a radiation passage area of the optical element 10 is composed of a surface of the base body 2 surrounding the opening area 6 and a surface of the filler body 3 arranged within the opening area 6.
- the base body 2 has in this embodiment a glass material and can be produced by means of a deep-drawing process.
- the glass material is particularly suitable for the optically critical region, since it is dimensionally stable even at temperatures greater than 300 ° C. These temperatures can occur in the manufacture and assembly of the radiation-emitting component 10 up to several hours.
- the carrier 5 is a plate, which preferably has a ceramic material with advantageous thermal properties for sufficient cooling of the component 10.
- the optical element 10 dome-like.
- the contour of the main body 2 is equal to two mutually facing "S", which means that the contour line has two points of inflection, with only one edge-side end of the main body 2 touching the carrier 5.
- the carrier 5 may have 4 electrical connection areas for powering the semiconductor body, with which the semiconductor body 4 are electrically connected.
- the filler body 3 according to this embodiment has a protective effect, and thus can serve as a potting for the semiconductor body 4.
- FIG. 2 shows a radiation-emitting component 10 with a carrier 5 and an optical element 1, which has fastening elements 11 on a side facing the carrier 5. These are provided for anchoring the optical element 1 in a further element 9.
- the further element 9 has recesses into which the pin-like shaped fastening elements 11 engage.
- the fastening elements 11 are integrally formed with the base body 2. The production can be carried out for example by means of injection molding, wherein the base body 2 and the fastening elements 11 are preferably made of a thermoplastic material.
- thermoplastic material is easier to deform when heated compared to the glass material
- Radiation-emitting device 10 for dissipating heat with advantage to a heat sink.
- the further element 9, on which the carrier 5 is arranged is a heat sink.
- the heat sink can be a plate which preferably contains a metal, for example Al.
- the optical element 1 may be spaced from the carrier 5 by means of a spacer 12.
- the optical element 1 can rest on the support 5, in which case the base body 2 surrounds the semiconductor body 4 on the peripheral side.
- the spacer 12 is filled with the filling material 7 as well as a cavity bounded on the inside by the base body 2.
- the filler 7 may contain a silicone gel.
- a protective effect for the semiconductor bodies 4 can be achieved by means of the filling body 3 in which the semiconductor bodies 4 are arranged.
- the refractive index of the filling material 7 is preferably matched to the refractive index of the base material 13 and to the refractive index of the semiconductor material used for the semiconductor bodies 4.
- the filling body 3 can extend upward through the opening region 6.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006046301A DE102006046301A1 (de) | 2006-09-29 | 2006-09-29 | Optisches Element, strahlungsemittierendes Bauelement und Verfahren zur Herstellung eines optischen Elements |
PCT/DE2007/001736 WO2008040317A2 (de) | 2006-09-29 | 2007-09-26 | Optisches element, strahlungsemittierendes bauelement und verfahren zur herstellung eines optischen elements |
Publications (1)
Publication Number | Publication Date |
---|---|
EP2067180A2 true EP2067180A2 (de) | 2009-06-10 |
Family
ID=39134331
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP07817578A Withdrawn EP2067180A2 (de) | 2006-09-29 | 2007-09-26 | Optisches element, strahlungsemittierendes bauelement und verfahren zur herstellung eines optischen elements |
Country Status (8)
Country | Link |
---|---|
US (1) | US20100025707A1 (de) |
EP (1) | EP2067180A2 (de) |
JP (1) | JP2010505253A (de) |
KR (1) | KR101653409B1 (de) |
CN (1) | CN101553937B (de) |
DE (1) | DE102006046301A1 (de) |
TW (1) | TWI378572B (de) |
WO (1) | WO2008040317A2 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104154463A (zh) * | 2010-09-27 | 2014-11-19 | 北京京东方光电科技有限公司 | 发光二极管光源及其制造方法、具有其的背光源 |
DE102013207111B4 (de) * | 2013-04-19 | 2021-07-01 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement |
WO2019043840A1 (ja) * | 2017-08-30 | 2019-03-07 | 創光科学株式会社 | 発光装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002252376A (ja) * | 2001-02-23 | 2002-09-06 | Seiwa Electric Mfg Co Ltd | 表面実装型発光ダイオード及びその製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000101149A (ja) * | 1998-09-25 | 2000-04-07 | Rohm Co Ltd | 半導体発光素子 |
US6274924B1 (en) | 1998-11-05 | 2001-08-14 | Lumileds Lighting, U.S. Llc | Surface mountable LED package |
DE19918370B4 (de) * | 1999-04-22 | 2006-06-08 | Osram Opto Semiconductors Gmbh | LED-Weißlichtquelle mit Linse |
DE10020465A1 (de) * | 2000-04-26 | 2001-11-08 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement |
DE50209685D1 (de) * | 2001-09-13 | 2007-04-19 | Lucea Ag | Leuchtdioden-leuchtpaneel und leiterplatte |
JP2005158963A (ja) * | 2003-11-25 | 2005-06-16 | Matsushita Electric Works Ltd | 発光装置 |
TWI241042B (en) * | 2004-03-11 | 2005-10-01 | Chen-Lun Hsingchen | A low thermal resistance LED device |
JP4686132B2 (ja) * | 2004-03-18 | 2011-05-18 | 株式会社東芝 | 保護カバー付き光半導体装置の製造方法 |
DE102004047061B4 (de) * | 2004-09-28 | 2018-07-26 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements |
JP2006140281A (ja) * | 2004-11-11 | 2006-06-01 | Stanley Electric Co Ltd | パワーled及びその製造方法 |
US7405433B2 (en) * | 2005-02-22 | 2008-07-29 | Avago Technologies Ecbu Ip Pte Ltd | Semiconductor light emitting device |
DE102005036520A1 (de) * | 2005-04-26 | 2006-11-09 | Osram Opto Semiconductors Gmbh | Optisches Bauteil, optoelektronisches Bauelement mit dem Bauteil und dessen Herstellung |
KR100592508B1 (ko) * | 2005-07-15 | 2006-06-26 | 한국광기술원 | 비콘 모양의 기판을 구비한 고출력 발광 다이오드 패키지 |
-
2006
- 2006-09-29 DE DE102006046301A patent/DE102006046301A1/de not_active Withdrawn
-
2007
- 2007-09-26 EP EP07817578A patent/EP2067180A2/de not_active Withdrawn
- 2007-09-26 US US12/442,641 patent/US20100025707A1/en not_active Abandoned
- 2007-09-26 KR KR1020097008753A patent/KR101653409B1/ko active IP Right Grant
- 2007-09-26 JP JP2009529529A patent/JP2010505253A/ja active Pending
- 2007-09-26 CN CN2007800359489A patent/CN101553937B/zh not_active Expired - Fee Related
- 2007-09-26 WO PCT/DE2007/001736 patent/WO2008040317A2/de active Application Filing
- 2007-09-29 TW TW096136505A patent/TWI378572B/zh not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002252376A (ja) * | 2001-02-23 | 2002-09-06 | Seiwa Electric Mfg Co Ltd | 表面実装型発光ダイオード及びその製造方法 |
Non-Patent Citations (1)
Title |
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See also references of WO2008040317A2 * |
Also Published As
Publication number | Publication date |
---|---|
JP2010505253A (ja) | 2010-02-18 |
DE102006046301A1 (de) | 2008-04-03 |
WO2008040317A2 (de) | 2008-04-10 |
US20100025707A1 (en) | 2010-02-04 |
CN101553937A (zh) | 2009-10-07 |
CN101553937B (zh) | 2012-06-20 |
TW200840091A (en) | 2008-10-01 |
KR101653409B1 (ko) | 2016-09-09 |
TWI378572B (en) | 2012-12-01 |
KR20090064472A (ko) | 2009-06-18 |
WO2008040317A3 (de) | 2008-06-05 |
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