CN105518862B - 固态成像器件、固态成像器件的驱动方法及电子装置 - Google Patents

固态成像器件、固态成像器件的驱动方法及电子装置 Download PDF

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CN105518862B
CN105518862B CN201480048428.1A CN201480048428A CN105518862B CN 105518862 B CN105518862 B CN 105518862B CN 201480048428 A CN201480048428 A CN 201480048428A CN 105518862 B CN105518862 B CN 105518862B
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photoelectric conversion
unit
conversion unit
pixel
phase difference
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CN105518862A (zh
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石渡宏明
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Sony Corp
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Sony Corp
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Priority to CN201710012765.0A priority patent/CN106888358B/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H04N23/672—Focus control based on electronic image sensor signals based on the phase difference signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201480048428.1A 2013-09-25 2014-09-12 固态成像器件、固态成像器件的驱动方法及电子装置 Active CN105518862B (zh)

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CN201710014175.1A CN107068702B (zh) 2013-09-25 2014-09-12 固态成像器件及电子装置
CN201710012765.0A CN106888358B (zh) 2013-09-25 2014-09-12 固态成像器件、固态成像器件的驱动方法及电子装置

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JP2013197872A JP6127869B2 (ja) 2013-09-25 2013-09-25 固体撮像素子及びその駆動方法、並びに電子機器
JP2013-197872 2013-09-25
PCT/JP2014/074245 WO2015045915A1 (ja) 2013-09-25 2014-09-12 固体撮像素子及びその駆動方法、並びに電子機器

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12174453B2 (en) 2021-09-29 2024-12-24 Samsung Electronics Co., Ltd. Image sensor and electronic apparatus including the image sensor

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150121564A (ko) * 2014-04-21 2015-10-29 삼성전자주식회사 촬상 소자 및 촬영 장치
KR102449720B1 (ko) * 2015-10-12 2022-09-29 삼성전자주식회사 이미지 센서를 이용한 인증 방법 및 장치
TWI785618B (zh) * 2016-01-27 2022-12-01 日商新力股份有限公司 固體攝像元件及電子機器
JP6774207B2 (ja) * 2016-04-08 2020-10-21 キヤノン株式会社 撮像素子及び撮像装置
CN107295221B (zh) 2016-04-08 2020-07-28 佳能株式会社 图像传感器和摄像设备
JP7005125B2 (ja) 2016-04-22 2022-01-21 キヤノン株式会社 撮像素子、撮像システム、および撮像素子の製造方法
KR102762966B1 (ko) * 2016-08-30 2025-02-05 삼성전자주식회사 이미지 센서 및 그 구동 방법
JP6464327B2 (ja) * 2016-09-27 2019-02-06 富士フイルム株式会社 撮像素子及び撮像装置
JP6899070B2 (ja) 2016-10-28 2021-07-07 ソニーグループ株式会社 固体撮像素子、固体撮像素子の製造方法、及び電子機器
KR102574236B1 (ko) * 2016-12-07 2023-09-05 에스케이하이닉스 주식회사 서로 다른 사이즈의 포토다이오드들을 갖는 이미지 센서
TWI754696B (zh) * 2016-12-14 2022-02-11 日商索尼半導體解決方案公司 固體攝像元件及電子機器
JP6877166B2 (ja) * 2017-02-10 2021-05-26 ユナイテッド・セミコンダクター・ジャパン株式会社 半導体装置及びその製造方法
JP6932580B2 (ja) * 2017-08-04 2021-09-08 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
US11658193B2 (en) 2018-01-23 2023-05-23 Samsung Electronics Co., Ltd. Image sensor
US10714517B2 (en) * 2018-01-23 2020-07-14 Samsung Electronics Co., Ltd. Image sensor
JP2019140219A (ja) * 2018-02-09 2019-08-22 ソニーセミコンダクタソリューションズ株式会社 半導体装置および半導体装置の製造方法
KR102532003B1 (ko) * 2018-10-31 2023-05-15 에스케이하이닉스 주식회사 하나의 포토다이오드를 공유하는 두 색의 컬러 필터들을 가진 이미지 센서
CN109713002B (zh) * 2018-12-07 2021-08-31 德淮半导体有限公司 图像传感器及其形成方法
JP2020113573A (ja) 2019-01-08 2020-07-27 キヤノン株式会社 光電変換装置
KR102519712B1 (ko) 2019-01-18 2023-04-06 삼성전자주식회사 이미지 센서
JP7555703B2 (ja) * 2019-02-25 2024-09-25 キヤノン株式会社 光電変換装置、撮像システム及び移動体
JP2020161779A (ja) * 2019-03-28 2020-10-01 ソニーセミコンダクタソリューションズ株式会社 受光装置および測距モジュール
CN110062144A (zh) * 2019-05-14 2019-07-26 德淮半导体有限公司 相位对焦图像传感器及其形成方法、工作方法
CN110233961B (zh) * 2019-07-30 2021-03-05 Oppo广东移动通信有限公司 互补金属氧化物图像传感器及终端
CN114175622B (zh) * 2019-09-17 2024-11-19 索尼半导体解决方案公司 摄像元件和摄像装置
JP2021068788A (ja) 2019-10-21 2021-04-30 キヤノン株式会社 光電変換装置、光電変換装置の製造方法、および撮像システム
KR102891047B1 (ko) * 2019-10-22 2025-11-25 에스케이하이닉스 주식회사 복수의 촬영 모드를 지원하는 이미지 센서
JP2020188267A (ja) * 2020-07-14 2020-11-19 キヤノン株式会社 撮像装置
JP7581020B2 (ja) * 2020-11-18 2024-11-12 キヤノン株式会社 光電変換装置、光電変換システム、移動体
JP2022120551A (ja) 2021-02-05 2022-08-18 キヤノン株式会社 光電変換装置、光電変換システム、移動体
KR20220139740A (ko) 2021-04-08 2022-10-17 삼성전자주식회사 오토 포커스 픽셀을 포함하는 이미지 센서
US12176376B2 (en) 2021-04-09 2024-12-24 Samsung Electronics Co., Ltd. Image sensor
JP7660567B2 (ja) * 2022-04-15 2025-04-11 北京小米移動軟件有限公司 固体撮像装置及びカメラ機器
WO2025158777A1 (ja) * 2024-01-25 2025-07-31 ソニーセミコンダクタソリューションズ株式会社 撮像装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1185089A2 (en) * 2000-08-28 2002-03-06 Canon Kabushiki Kaisha Image pickup apparatus
JP2012128248A (ja) * 2010-12-16 2012-07-05 Nikon Corp 撮像装置
JP2012165070A (ja) * 2011-02-03 2012-08-30 Nikon Corp 固体撮像素子及びこれを用いた撮像装置
CN102883093A (zh) * 2011-07-13 2013-01-16 奥林巴斯映像株式会社 摄像装置以及摄像元件

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2500428B2 (ja) * 1993-04-06 1996-05-29 日本電気株式会社 イメ―ジセンサおよびその駆動方法
US6563105B2 (en) * 1999-06-08 2003-05-13 University Of Washington Image acquisition with depth enhancement
JP2004165462A (ja) * 2002-11-14 2004-06-10 Sony Corp 固体撮像素子及びその製造方法
JP2006294871A (ja) * 2005-04-11 2006-10-26 Matsushita Electric Ind Co Ltd 固体撮像装置
JP5002412B2 (ja) * 2007-10-24 2012-08-15 キヤノン株式会社 撮像装置
US8482639B2 (en) * 2008-02-08 2013-07-09 Omnivision Technologies, Inc. Black reference pixel for backside illuminated image sensor
JP5451111B2 (ja) * 2008-03-11 2014-03-26 キヤノン株式会社 焦点検出装置およびそれを有する撮像装置
JP5552214B2 (ja) * 2008-03-11 2014-07-16 キヤノン株式会社 焦点検出装置
JP5098831B2 (ja) * 2008-06-06 2012-12-12 ソニー株式会社 固体撮像素子およびカメラシステム
JP5276371B2 (ja) * 2008-07-09 2013-08-28 キヤノン株式会社 撮像装置
JP5537172B2 (ja) * 2010-01-28 2014-07-02 ソニー株式会社 固体撮像装置及び電子機器
TW201200959A (en) * 2010-06-29 2012-01-01 Fujifilm Corp One-eyed stereo photographic device
JP2012023207A (ja) 2010-07-14 2012-02-02 Toshiba Corp 裏面照射型固体撮像装置
JP2012084816A (ja) 2010-10-14 2012-04-26 Fujifilm Corp 裏面照射型撮像素子及び撮像装置
JP5753371B2 (ja) * 2010-11-25 2015-07-22 キヤノン株式会社 撮像装置およびその制御方法
JP5664270B2 (ja) * 2011-01-21 2015-02-04 ソニー株式会社 撮像素子および撮像装置
JP2012173531A (ja) * 2011-02-22 2012-09-10 Sony Corp 撮像装置、およびフォーカス制御方法、並びにプログラム
JP2012182332A (ja) * 2011-03-02 2012-09-20 Sony Corp 撮像素子および撮像装置
JP2013037296A (ja) * 2011-08-10 2013-02-21 Olympus Imaging Corp 撮像装置及び撮像素子
JP5864990B2 (ja) * 2011-10-03 2016-02-17 キヤノン株式会社 固体撮像装置およびカメラ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1185089A2 (en) * 2000-08-28 2002-03-06 Canon Kabushiki Kaisha Image pickup apparatus
JP2012128248A (ja) * 2010-12-16 2012-07-05 Nikon Corp 撮像装置
JP2012165070A (ja) * 2011-02-03 2012-08-30 Nikon Corp 固体撮像素子及びこれを用いた撮像装置
CN102883093A (zh) * 2011-07-13 2013-01-16 奥林巴斯映像株式会社 摄像装置以及摄像元件

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12174453B2 (en) 2021-09-29 2024-12-24 Samsung Electronics Co., Ltd. Image sensor and electronic apparatus including the image sensor

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JP2015065269A (ja) 2015-04-09
CN107068702B (zh) 2020-08-18
CN106888358B (zh) 2020-01-14
CN107068702A (zh) 2017-08-18
US20170237921A1 (en) 2017-08-17
WO2015045915A1 (ja) 2015-04-02
KR20160060644A (ko) 2016-05-30
US9888196B2 (en) 2018-02-06
CN105518862A (zh) 2016-04-20
US20160234449A1 (en) 2016-08-11
CN106888358A (zh) 2017-06-23
US10015426B2 (en) 2018-07-03
KR101857377B1 (ko) 2018-05-11
US9706145B2 (en) 2017-07-11
TWI663877B (zh) 2019-06-21
TW201515467A (zh) 2015-04-16
JP6127869B2 (ja) 2017-05-17
US20180077372A1 (en) 2018-03-15

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