CN105518825B - 多区加热器 - Google Patents
多区加热器 Download PDFInfo
- Publication number
- CN105518825B CN105518825B CN201480020826.2A CN201480020826A CN105518825B CN 105518825 B CN105518825 B CN 105518825B CN 201480020826 A CN201480020826 A CN 201480020826A CN 105518825 B CN105518825 B CN 105518825B
- Authority
- CN
- China
- Prior art keywords
- plate
- temperature
- shaft
- layer
- temperature sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 100
- 239000000919 ceramic Substances 0.000 claims description 88
- 230000008569 process Effects 0.000 claims description 72
- 229910052782 aluminium Inorganic materials 0.000 claims description 64
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 63
- 239000004411 aluminium Substances 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 5
- 238000005476 soldering Methods 0.000 claims description 4
- 238000005259 measurement Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 154
- 238000005219 brazing Methods 0.000 description 79
- 239000000463 material Substances 0.000 description 65
- 238000012545 processing Methods 0.000 description 45
- 238000005304 joining Methods 0.000 description 32
- 238000009736 wetting Methods 0.000 description 26
- 235000012431 wafers Nutrition 0.000 description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 20
- 239000001301 oxygen Substances 0.000 description 20
- 229910052760 oxygen Inorganic materials 0.000 description 20
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 18
- 239000010408 film Substances 0.000 description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 12
- 238000001465 metallisation Methods 0.000 description 11
- 229910000679 solder Inorganic materials 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000011282 treatment Methods 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000003754 machining Methods 0.000 description 7
- 238000012544 monitoring process Methods 0.000 description 7
- 238000000926 separation method Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 230000033001 locomotion Effects 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 229910000838 Al alloy Inorganic materials 0.000 description 5
- 238000000429 assembly Methods 0.000 description 5
- 230000000712 assembly Effects 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 230000013011 mating Effects 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910001026 inconel Inorganic materials 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910001094 6061 aluminium alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000000411 inducer Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000002490 spark plasma sintering Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/037—Heaters with zones of different power density
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Resistance Heating (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Surface Heating Bodies (AREA)
- Control And Other Processes For Unpacking Of Materials (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/831,670 | 2013-03-15 | ||
| US13/831,670 US9984866B2 (en) | 2012-06-12 | 2013-03-15 | Multiple zone heater |
| PCT/US2014/028937 WO2014144502A1 (en) | 2012-06-12 | 2014-03-14 | Multiple zone heater |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105518825A CN105518825A (zh) | 2016-04-20 |
| CN105518825B true CN105518825B (zh) | 2018-02-06 |
Family
ID=53040011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480020826.2A Active CN105518825B (zh) | 2013-03-15 | 2014-03-14 | 多区加热器 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP2973659A4 (enrdf_load_stackoverflow) |
| JP (1) | JP6382295B2 (enrdf_load_stackoverflow) |
| KR (1) | KR102171734B1 (enrdf_load_stackoverflow) |
| CN (1) | CN105518825B (enrdf_load_stackoverflow) |
| TW (2) | TWI632589B (enrdf_load_stackoverflow) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102461150B1 (ko) | 2015-09-18 | 2022-11-01 | 삼성전자주식회사 | 3차원 반도체 메모리 장치 |
| CN111373487B (zh) * | 2017-10-24 | 2024-09-24 | 沃特洛电气制造公司 | 设有陶瓷绝缘体和铝套的电连接器及其制造方法 |
| US11961747B2 (en) * | 2018-03-28 | 2024-04-16 | Kyocera Corporation | Heater and heater system |
| KR102608397B1 (ko) * | 2018-10-16 | 2023-12-01 | 주식회사 미코세라믹스 | 미들 영역 독립 제어 세라믹 히터 |
| JP6775099B1 (ja) * | 2018-12-20 | 2020-10-28 | 日本碍子株式会社 | セラミックヒータ |
| US20210111059A1 (en) * | 2019-10-12 | 2021-04-15 | Applies Materials, Inc. | Wafer Heater With Backside And Integrated Bevel Purge |
| JP7202322B2 (ja) * | 2020-02-03 | 2023-01-11 | 日本碍子株式会社 | セラミックヒータ |
| JP7240341B2 (ja) | 2020-02-03 | 2023-03-15 | 日本碍子株式会社 | セラミックヒータ及び熱電対ガイド |
| JP7360992B2 (ja) * | 2020-06-02 | 2023-10-13 | 京セラ株式会社 | 端子付構造体 |
| KR102242589B1 (ko) * | 2020-09-09 | 2021-04-21 | 주식회사 미코세라믹스 | 세라믹 히터 |
| JP2024172480A (ja) * | 2023-05-31 | 2024-12-12 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置及びプログラム |
| KR102844318B1 (ko) | 2023-12-19 | 2025-08-08 | 주식회사 에스지에스코리아 | 멀티 존 히터의 제어 장치 및 제어 방법 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4854495A (en) * | 1986-06-20 | 1989-08-08 | Hitachi, Ltd. | Sealing structure, method of soldering and process for preparing sealing structure |
| US6583638B2 (en) * | 1999-01-26 | 2003-06-24 | Trio-Tech International | Temperature-controlled semiconductor wafer chuck system |
| KR20010111058A (ko) * | 2000-06-09 | 2001-12-15 | 조셉 제이. 스위니 | 전체 영역 온도 제어 정전기 척 및 그 제조방법 |
| JP3897563B2 (ja) * | 2001-10-24 | 2007-03-28 | 日本碍子株式会社 | 加熱装置 |
| JP4098112B2 (ja) * | 2003-02-14 | 2008-06-11 | 日本発条株式会社 | ヒータユニット |
| JP4238772B2 (ja) * | 2003-05-07 | 2009-03-18 | 東京エレクトロン株式会社 | 載置台構造及び熱処理装置 |
| JP2005166354A (ja) * | 2003-12-01 | 2005-06-23 | Ngk Insulators Ltd | セラミックヒーター |
| WO2006046308A1 (ja) * | 2004-10-29 | 2006-05-04 | Cxe Japan Co., Ltd. | 半導体基板の支持体 |
| JP4787568B2 (ja) * | 2004-11-16 | 2011-10-05 | 日本碍子株式会社 | 接合剤、窒化アルミニウム接合体及びその製造方法 |
| JP4640842B2 (ja) * | 2006-10-11 | 2011-03-02 | 日本碍子株式会社 | 加熱装置 |
| JP4450106B1 (ja) * | 2008-03-11 | 2010-04-14 | 東京エレクトロン株式会社 | 載置台構造及び処理装置 |
| JP5791412B2 (ja) * | 2010-07-26 | 2015-10-07 | 日本碍子株式会社 | セラミックヒーター |
| TWI501339B (zh) * | 2010-09-24 | 2015-09-21 | Ngk Insulators Ltd | Semiconductor manufacturing device components |
| JP5855402B2 (ja) * | 2010-09-24 | 2016-02-09 | 日本碍子株式会社 | サセプター及びその製法 |
| JP2012080103A (ja) * | 2010-10-01 | 2012-04-19 | Ngk Insulators Ltd | サセプター及びその製法 |
| US20120211484A1 (en) * | 2011-02-23 | 2012-08-23 | Applied Materials, Inc. | Methods and apparatus for a multi-zone pedestal heater |
| US20130334199A1 (en) * | 2011-03-01 | 2013-12-19 | Applied Materials, Inc. | Thin heated substrate support |
-
2014
- 2014-03-14 KR KR1020157029798A patent/KR102171734B1/ko active Active
- 2014-03-14 TW TW103109558A patent/TWI632589B/zh active
- 2014-03-14 CN CN201480020826.2A patent/CN105518825B/zh active Active
- 2014-03-14 EP EP14764068.4A patent/EP2973659A4/en not_active Withdrawn
- 2014-03-14 JP JP2016502941A patent/JP6382295B2/ja active Active
- 2014-03-14 TW TW112200700U patent/TWM644795U/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR102171734B1 (ko) | 2020-10-29 |
| JP6382295B2 (ja) | 2018-08-29 |
| CN105518825A (zh) | 2016-04-20 |
| EP2973659A1 (en) | 2016-01-20 |
| EP2973659A4 (en) | 2016-11-09 |
| KR20150132515A (ko) | 2015-11-25 |
| TW201506989A (zh) | 2015-02-16 |
| JP2016522881A (ja) | 2016-08-04 |
| TWI632589B (zh) | 2018-08-11 |
| TWM644795U (zh) | 2023-08-11 |
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| Publication | Publication Date | Title |
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Effective date of registration: 20210531 Address after: Missouri, USA Patentee after: WATLOW ELECTRIC MANUFACTURING Co. Address before: California, USA Patentee before: COMPONENT RE-ENGINEERING Co.,Inc. |