TWI632589B - 供使用於半導體製造製程的晶圓夾頭 - Google Patents

供使用於半導體製造製程的晶圓夾頭 Download PDF

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Publication number
TWI632589B
TWI632589B TW103109558A TW103109558A TWI632589B TW I632589 B TWI632589 B TW I632589B TW 103109558 A TW103109558 A TW 103109558A TW 103109558 A TW103109558 A TW 103109558A TW I632589 B TWI632589 B TW I632589B
Authority
TW
Taiwan
Prior art keywords
heater
panel
shaft
layer
temperature
Prior art date
Application number
TW103109558A
Other languages
English (en)
Chinese (zh)
Other versions
TW201506989A (zh
Inventor
布蘭特 艾略特
法蘭克 巴馬
艾弗瑞德 艾略特
亞歷山大 威瑟
丹尼斯 雷克斯
理察 修斯特
Original Assignee
康波能再造工程公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/831,670 external-priority patent/US9984866B2/en
Application filed by 康波能再造工程公司 filed Critical 康波能再造工程公司
Publication of TW201506989A publication Critical patent/TW201506989A/zh
Application granted granted Critical
Publication of TWI632589B publication Critical patent/TWI632589B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/037—Heaters with zones of different power density

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Resistance Heating (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Surface Heating Bodies (AREA)
  • Control And Other Processes For Unpacking Of Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW103109558A 2013-03-15 2014-03-14 供使用於半導體製造製程的晶圓夾頭 TWI632589B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/831,670 2013-03-15
US13/831,670 US9984866B2 (en) 2012-06-12 2013-03-15 Multiple zone heater

Publications (2)

Publication Number Publication Date
TW201506989A TW201506989A (zh) 2015-02-16
TWI632589B true TWI632589B (zh) 2018-08-11

Family

ID=53040011

Family Applications (2)

Application Number Title Priority Date Filing Date
TW103109558A TWI632589B (zh) 2013-03-15 2014-03-14 供使用於半導體製造製程的晶圓夾頭
TW112200700U TWM644795U (zh) 2013-03-15 2014-03-14 使用在半導體處理室內的裝置

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW112200700U TWM644795U (zh) 2013-03-15 2014-03-14 使用在半導體處理室內的裝置

Country Status (5)

Country Link
EP (1) EP2973659A4 (enrdf_load_stackoverflow)
JP (1) JP6382295B2 (enrdf_load_stackoverflow)
KR (1) KR102171734B1 (enrdf_load_stackoverflow)
CN (1) CN105518825B (enrdf_load_stackoverflow)
TW (2) TWI632589B (enrdf_load_stackoverflow)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102461150B1 (ko) 2015-09-18 2022-11-01 삼성전자주식회사 3차원 반도체 메모리 장치
CN111373487B (zh) * 2017-10-24 2024-09-24 沃特洛电气制造公司 设有陶瓷绝缘体和铝套的电连接器及其制造方法
US11961747B2 (en) * 2018-03-28 2024-04-16 Kyocera Corporation Heater and heater system
KR102608397B1 (ko) * 2018-10-16 2023-12-01 주식회사 미코세라믹스 미들 영역 독립 제어 세라믹 히터
JP6775099B1 (ja) * 2018-12-20 2020-10-28 日本碍子株式会社 セラミックヒータ
US20210111059A1 (en) * 2019-10-12 2021-04-15 Applies Materials, Inc. Wafer Heater With Backside And Integrated Bevel Purge
JP7202322B2 (ja) * 2020-02-03 2023-01-11 日本碍子株式会社 セラミックヒータ
JP7240341B2 (ja) 2020-02-03 2023-03-15 日本碍子株式会社 セラミックヒータ及び熱電対ガイド
JP7360992B2 (ja) * 2020-06-02 2023-10-13 京セラ株式会社 端子付構造体
KR102242589B1 (ko) * 2020-09-09 2021-04-21 주식회사 미코세라믹스 세라믹 히터
JP2024172480A (ja) * 2023-05-31 2024-12-12 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置及びプログラム
KR102844318B1 (ko) 2023-12-19 2025-08-08 주식회사 에스지에스코리아 멀티 존 히터의 제어 장치 및 제어 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6605955B1 (en) * 1999-01-26 2003-08-12 Trio-Tech International Temperature controlled wafer chuck system with low thermal resistance
JP2007088484A (ja) * 2006-10-11 2007-04-05 Ngk Insulators Ltd 加熱装置

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US4854495A (en) * 1986-06-20 1989-08-08 Hitachi, Ltd. Sealing structure, method of soldering and process for preparing sealing structure
KR20010111058A (ko) * 2000-06-09 2001-12-15 조셉 제이. 스위니 전체 영역 온도 제어 정전기 척 및 그 제조방법
JP3897563B2 (ja) * 2001-10-24 2007-03-28 日本碍子株式会社 加熱装置
JP4098112B2 (ja) * 2003-02-14 2008-06-11 日本発条株式会社 ヒータユニット
JP4238772B2 (ja) * 2003-05-07 2009-03-18 東京エレクトロン株式会社 載置台構造及び熱処理装置
JP2005166354A (ja) * 2003-12-01 2005-06-23 Ngk Insulators Ltd セラミックヒーター
WO2006046308A1 (ja) * 2004-10-29 2006-05-04 Cxe Japan Co., Ltd. 半導体基板の支持体
JP4787568B2 (ja) * 2004-11-16 2011-10-05 日本碍子株式会社 接合剤、窒化アルミニウム接合体及びその製造方法
JP4450106B1 (ja) * 2008-03-11 2010-04-14 東京エレクトロン株式会社 載置台構造及び処理装置
JP5791412B2 (ja) * 2010-07-26 2015-10-07 日本碍子株式会社 セラミックヒーター
TWI501339B (zh) * 2010-09-24 2015-09-21 Ngk Insulators Ltd Semiconductor manufacturing device components
JP5855402B2 (ja) * 2010-09-24 2016-02-09 日本碍子株式会社 サセプター及びその製法
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US20130334199A1 (en) * 2011-03-01 2013-12-19 Applied Materials, Inc. Thin heated substrate support

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6605955B1 (en) * 1999-01-26 2003-08-12 Trio-Tech International Temperature controlled wafer chuck system with low thermal resistance
JP2007088484A (ja) * 2006-10-11 2007-04-05 Ngk Insulators Ltd 加熱装置

Also Published As

Publication number Publication date
KR102171734B1 (ko) 2020-10-29
JP6382295B2 (ja) 2018-08-29
CN105518825A (zh) 2016-04-20
EP2973659A1 (en) 2016-01-20
EP2973659A4 (en) 2016-11-09
KR20150132515A (ko) 2015-11-25
TW201506989A (zh) 2015-02-16
JP2016522881A (ja) 2016-08-04
CN105518825B (zh) 2018-02-06
TWM644795U (zh) 2023-08-11

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