JP6382295B2 - マルチゾーンヒータ - Google Patents

マルチゾーンヒータ Download PDF

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Publication number
JP6382295B2
JP6382295B2 JP2016502941A JP2016502941A JP6382295B2 JP 6382295 B2 JP6382295 B2 JP 6382295B2 JP 2016502941 A JP2016502941 A JP 2016502941A JP 2016502941 A JP2016502941 A JP 2016502941A JP 6382295 B2 JP6382295 B2 JP 6382295B2
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JP
Japan
Prior art keywords
plate
heater
layer
shaft
temperature sensor
Prior art date
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Application number
JP2016502941A
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English (en)
Japanese (ja)
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JP2016522881A (ja
JP2016522881A5 (enrdf_load_stackoverflow
Inventor
ブレント ディー エリオット
ブレント ディー エリオット
フランク バルマ
フランク バルマ
アルフレッド グラント エリオット
アルフレッド グラント エリオット
アレクサンダー ヴェイトサー
アレクサンダー ヴェイトサー
デニス ジー レックス
デニス ジー レックス
リチャード イー シュスター
リチャード イー シュスター
Original Assignee
コンポーネント リ−エンジニアリング カンパニー インコーポレイテッド
コンポーネント リ−エンジニアリング カンパニー インコーポレイテッド
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Publication date
Priority claimed from US13/831,670 external-priority patent/US9984866B2/en
Application filed by コンポーネント リ−エンジニアリング カンパニー インコーポレイテッド, コンポーネント リ−エンジニアリング カンパニー インコーポレイテッド filed Critical コンポーネント リ−エンジニアリング カンパニー インコーポレイテッド
Publication of JP2016522881A publication Critical patent/JP2016522881A/ja
Publication of JP2016522881A5 publication Critical patent/JP2016522881A5/ja
Application granted granted Critical
Publication of JP6382295B2 publication Critical patent/JP6382295B2/ja
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67103Apparatus for thermal treatment mainly by conduction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/20Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/28Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H05B3/283Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/002Heaters using a particular layout for the resistive material or resistive elements
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/037Heaters with zones of different power density

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Resistance Heating (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Surface Heating Bodies (AREA)
  • Control And Other Processes For Unpacking Of Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2016502941A 2013-03-15 2014-03-14 マルチゾーンヒータ Active JP6382295B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/831,670 2013-03-15
US13/831,670 US9984866B2 (en) 2012-06-12 2013-03-15 Multiple zone heater
PCT/US2014/028937 WO2014144502A1 (en) 2012-06-12 2014-03-14 Multiple zone heater

Publications (3)

Publication Number Publication Date
JP2016522881A JP2016522881A (ja) 2016-08-04
JP2016522881A5 JP2016522881A5 (enrdf_load_stackoverflow) 2017-04-20
JP6382295B2 true JP6382295B2 (ja) 2018-08-29

Family

ID=53040011

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016502941A Active JP6382295B2 (ja) 2013-03-15 2014-03-14 マルチゾーンヒータ

Country Status (5)

Country Link
EP (1) EP2973659A4 (enrdf_load_stackoverflow)
JP (1) JP6382295B2 (enrdf_load_stackoverflow)
KR (1) KR102171734B1 (enrdf_load_stackoverflow)
CN (1) CN105518825B (enrdf_load_stackoverflow)
TW (2) TWI632589B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021190355A (ja) * 2020-06-02 2021-12-13 京セラ株式会社 端子付構造体

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102461150B1 (ko) 2015-09-18 2022-11-01 삼성전자주식회사 3차원 반도체 메모리 장치
CN111373487B (zh) * 2017-10-24 2024-09-24 沃特洛电气制造公司 设有陶瓷绝缘体和铝套的电连接器及其制造方法
US11961747B2 (en) * 2018-03-28 2024-04-16 Kyocera Corporation Heater and heater system
KR102608397B1 (ko) * 2018-10-16 2023-12-01 주식회사 미코세라믹스 미들 영역 독립 제어 세라믹 히터
JP6775099B1 (ja) * 2018-12-20 2020-10-28 日本碍子株式会社 セラミックヒータ
US20210111059A1 (en) * 2019-10-12 2021-04-15 Applies Materials, Inc. Wafer Heater With Backside And Integrated Bevel Purge
JP7202322B2 (ja) * 2020-02-03 2023-01-11 日本碍子株式会社 セラミックヒータ
JP7240341B2 (ja) 2020-02-03 2023-03-15 日本碍子株式会社 セラミックヒータ及び熱電対ガイド
KR102242589B1 (ko) * 2020-09-09 2021-04-21 주식회사 미코세라믹스 세라믹 히터
JP2024172480A (ja) * 2023-05-31 2024-12-12 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置及びプログラム
KR102844318B1 (ko) 2023-12-19 2025-08-08 주식회사 에스지에스코리아 멀티 존 히터의 제어 장치 및 제어 방법

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4854495A (en) * 1986-06-20 1989-08-08 Hitachi, Ltd. Sealing structure, method of soldering and process for preparing sealing structure
US6583638B2 (en) * 1999-01-26 2003-06-24 Trio-Tech International Temperature-controlled semiconductor wafer chuck system
KR20010111058A (ko) * 2000-06-09 2001-12-15 조셉 제이. 스위니 전체 영역 온도 제어 정전기 척 및 그 제조방법
JP3897563B2 (ja) * 2001-10-24 2007-03-28 日本碍子株式会社 加熱装置
JP4098112B2 (ja) * 2003-02-14 2008-06-11 日本発条株式会社 ヒータユニット
JP4238772B2 (ja) * 2003-05-07 2009-03-18 東京エレクトロン株式会社 載置台構造及び熱処理装置
JP2005166354A (ja) * 2003-12-01 2005-06-23 Ngk Insulators Ltd セラミックヒーター
WO2006046308A1 (ja) * 2004-10-29 2006-05-04 Cxe Japan Co., Ltd. 半導体基板の支持体
JP4787568B2 (ja) * 2004-11-16 2011-10-05 日本碍子株式会社 接合剤、窒化アルミニウム接合体及びその製造方法
JP4640842B2 (ja) * 2006-10-11 2011-03-02 日本碍子株式会社 加熱装置
JP4450106B1 (ja) * 2008-03-11 2010-04-14 東京エレクトロン株式会社 載置台構造及び処理装置
JP5791412B2 (ja) * 2010-07-26 2015-10-07 日本碍子株式会社 セラミックヒーター
TWI501339B (zh) * 2010-09-24 2015-09-21 Ngk Insulators Ltd Semiconductor manufacturing device components
JP5855402B2 (ja) * 2010-09-24 2016-02-09 日本碍子株式会社 サセプター及びその製法
JP2012080103A (ja) * 2010-10-01 2012-04-19 Ngk Insulators Ltd サセプター及びその製法
US20120211484A1 (en) * 2011-02-23 2012-08-23 Applied Materials, Inc. Methods and apparatus for a multi-zone pedestal heater
US20130334199A1 (en) * 2011-03-01 2013-12-19 Applied Materials, Inc. Thin heated substrate support

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021190355A (ja) * 2020-06-02 2021-12-13 京セラ株式会社 端子付構造体
JP7360992B2 (ja) 2020-06-02 2023-10-13 京セラ株式会社 端子付構造体

Also Published As

Publication number Publication date
KR102171734B1 (ko) 2020-10-29
CN105518825A (zh) 2016-04-20
EP2973659A1 (en) 2016-01-20
EP2973659A4 (en) 2016-11-09
KR20150132515A (ko) 2015-11-25
TW201506989A (zh) 2015-02-16
JP2016522881A (ja) 2016-08-04
CN105518825B (zh) 2018-02-06
TWI632589B (zh) 2018-08-11
TWM644795U (zh) 2023-08-11

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