CN105493259A - 用于将材料涂覆于衬底的装置和方法 - Google Patents
用于将材料涂覆于衬底的装置和方法 Download PDFInfo
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- CN105493259A CN105493259A CN201480035460.6A CN201480035460A CN105493259A CN 105493259 A CN105493259 A CN 105493259A CN 201480035460 A CN201480035460 A CN 201480035460A CN 105493259 A CN105493259 A CN 105493259A
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Abstract
本发明公开一种用于加热衬底以使材料在衬底上结晶的装置,所述装置具备:处理腔室,其具备用于衬底通过的第一可密封开口和第二可密封开口、用于接收处理气体的第一入口和用于从处理腔室排出废气的第一出口;蒸发器装置,其用于使材料蒸发,所述蒸发器装置连接至处理腔室以便供应处理气体;第一冷凝装置,其连接至处理腔室以便接收废气,并且其中第一冷凝装置经设计来将废气中的气相材料冷凝以形成固相;以及第二冷凝装置,其用于将废气中的气相材料的一部分冷凝以形成液相,所述第二冷凝装置将第一冷凝装置连接至排出管道;以及连接管道,其位于蒸发器装置与第二冷凝装置之间以便在第二冷凝装置与蒸发器装置之间输送液相材料。
Description
本发明涉及一种用于根据预定温度曲线加热衬底以使材料在衬底上结晶的装置和方法。
这种类型的装置是从US5,578,503得知,并且也被称为快速热处理器(RTP)。已知装置用来根据特定温度曲线先后加热并冷却衬底,例如,以便使材料在衬底上结晶。先前涂覆的硒层尤其用来产生吸光膜层,所述吸光膜层包括铜(Cu)、铟(I)、镓(Ga)和/或硒(Se)并且用来例如改善太阳能电池的光电效率。已知装置可用来在处理气体的受控气氛下使例如包括例如铜、铟、镓和/或硒的这种基础材料结晶,所述处理气体包括例如将要结晶的材料的蒸汽。
已知装置可包括若干处理腔室,通过借助于加热元件加热这些处理腔室,使处理腔室中的每一个经受特定温度曲线。已知装置还可具备气体入口,以便允许净化气体(例如,用于产生低氧环境的氮气(N2))流入壳体中。在随后的处理腔室中,可根据将要遵循的温度曲线来设定不同温度,所述温度是执行再结晶所需的。此外,处理腔室含有受控气氛,例如,含有包括例如硒蒸汽的处理气体,以使得再结晶在某一相变时发生。此外,已知装置具备输送部件,用于分别经由第一开口和第二开口将衬底输送至处理腔中并从处理腔室中输送出来。此外,处理腔室具备第一输送管道,用于排出废气,所述废气包括处理气体和净化气体的一部分。这个出口连接至第一冷凝装置。在这个第一冷凝装置中,将废气冷却并将材料从蒸汽相冷凝成固体状态。在已知装置中,这个冷凝装置被称作“冷阱(coldtrap)”。已知装置的缺陷在于,材料是以例如薄片或微粒的固体形式冷凝,并且必须排出至再循环设备以便适合于再一次重复使用。
本发明的目标是提供一种实现对将要结晶的材料的更有效利用的装置。
根据本发明的第一方面,这个目标是通过用于根据预定温度曲线加热衬底以使材料在衬底上结晶的装置来实现,所述装置具备:至少一个处理腔室,其具备用于衬底通过的第一可密封开口和第二可密封开口、用于将处理气体接收在处理腔室中的第一入口和用于从处理腔室输送废气的第一输送构件;蒸发器装置,其用于使材料蒸发,所述蒸发器装置连接至第一入口以便将处理气体供应至处理腔室,其中处理气体被气相材料部分饱和;第一冷凝装置,其用于接收废气,所述装置经由第一输送构件连接至处理腔室以便将废气输送至第一冷凝装置,并且其中第一冷凝装置经设计来将废气中的气相材料冷凝以形成固相,其中所述装置进一步具备第二冷凝装置,其用于将废气中的气相材料的一部分冷凝以形成液相,所述第二冷凝装置经由第一输送构件将第一冷凝装置连接至处理腔室;以及第二输送构件,其位于蒸发器装置与第二冷凝装置之间,以便将液相材料从第二冷凝装置输送至蒸发器装置。
通过将来自废气的气相材料的一部分冷凝以形成液相,并且使液相材料的一部分从第二冷凝装置返回至蒸发器装置,可在不将材料转换为固体状态的情况下回收并且重复使用材料中的经由废气离开处理空间的这一部分。这种材料的实例为硒(Se)、银(Ag)或硫磺(S)。
另一优点在于,介于第二冷凝装置与蒸发装置之间的材料流充当气体分离,借助于所述材料流分别供应处理气体与废气并且分开地排出处理气体与废气。液相材料流还在装置内部留在第二冷凝装置与蒸发器装置之间。这导致安全的并且能量有效的装置。使蒸发材料再循环的优点在于,有可能实现较低消耗,并且另一优点在于,材料留在装置内部,因此不必使这个可能有毒的材料经受进一步处理。
另一优点在于,废气中可能的杂质可被排出至第一冷凝装置,并且第二冷凝装置中的冷凝的材料可保持高纯度。通过将第二冷凝装置中的温度设定成高于可能的杂质的冷凝点,所述杂质可在废气的残余物中排出至第一冷凝装置,并且所述杂质将不会最终出现在将要冷凝的回收材料中。借助于这个实施方案,有可能消除其中处理例如硫磺(S)的另一处理腔室与硒浴之间的交叉污染。
在装置的另一实施方案中,连接管道、蒸发器装置和第二冷凝装置以某种方式布置,以使得将要蒸发的液相材料的液位大致上等于将要冷凝的液相材料的液位。借助于这种布置,蒸发器装置和第二冷凝装置充当连通导管,其中蒸发材料从蒸发器装置的排出中的变化由通过连接管道去往蒸发器装置的供应中的相等量值的变化自动补偿。
在装置的另一实施方案中,第一连接管道连接至第二冷凝装置的第一末端。在这个实施方案中,蒸发器装置中的材料与第二冷凝装置中的材料之间存在最小温差。其优点在于,在冷凝装置中具有较高粘度的材料在蒸发器腔室的侧面上变得更暖,因此材料将更加平滑地流动。
装置的另一实施方案包括:第三输送构件,其连接至第二冷凝装置的第二末端和第一冷凝装置,并且经设计来将废气的残余物从第二冷凝装置排出至第一冷凝装置。由于这个构造,排出气体可从处理腔室流至第二冷凝装置,以便在第二冷凝装置处冷却至液相的冷凝温度。废气可从第二冷凝装置流入第一冷凝装置中,废气在第一冷凝装置中更进一步冷却,以使得剩余蒸汽可冷凝/沉积为固体材料。
在装置的另一实施方案中,第二冷凝装置具备加热装置,所述加热装置经设计来使将要冷凝的液态材料加热至一定温度,所述温度至少高于材料的熔点温度。这个实施方案可用来开始再循环,并且当再循环可操作时,这个加热装置可用来将温度调节至预设值。
在另一实施方案中,加热装置经设计来将第二冷凝装置中的废气加热至一定温度,所述温度至少高于废气中的杂质的熔点温度。这种杂质的实例为硫磺(S)。硫磺以气相供应至最终处理腔室。微量的这个硫磺可扩散至其中处理硒的处理腔室中。如果硒材料中的硫磺(S)浓度超过某一值,这可能造成问题。通过选择硒(Se)的正确的冷凝温度,有可能确保硫磺在硫磺的低部分压力下不冷凝或冷凝的程度远不足以成为液相。在装置的另一实施方案中,第二冷凝装置具备迷宫式系统,所述迷宫式系统包括多个板片,其中每一板片具备开口以便允许废气通过,其中迷宫式系统布置于第二冷凝装置的第一末端与第二末端之间。迷宫式系统改善废气与周围环境之间的热交换,其中可能使冷凝热量消散。板片由在高温下耐硒和硫磺的材料制成,例如陶瓷或石墨。
在装置的另一实施方案中,陶瓷板片延伸至将要冷凝的液相材料的液位之下。
在装置的另一实施方案中,装置具备:输送轮轴,所述输送轮轴可旋转地布置于处理腔室中;和处理腔室中的通路,所述通路用于可旋转地附接输送轮轴,所述通路具备排出管道,所述排出管道连接所述通路以便排出泄漏气体。通过所述通路泄漏的泄漏气体经由排出管道排出。
在装置的另一实施方案中,装置具备:第三冷凝装置,其用于经由第一排出管道接收泄漏气体,所述第一排出管道用于将泄漏气体输送至第三冷凝装置,其中第三冷凝装置经设计来将泄漏气体中的气相材料冷凝以形成固相;
第四冷凝装置,其用于将泄漏气体中的气相材料的一部分冷凝以形成液相,所述第四冷凝装置将第三冷凝装置连接至排出管道;以及
第四输送构件,其位于第四冷凝装置与蒸发器装置之间,以便将冷凝的材料从第四冷凝装置输送至蒸发器装置。借助于第三冷凝装置和第四冷凝装置,可将液相直接返回至蒸发器装置,其中所述第三冷凝装置和第四冷凝装置接收通过所述通路泄漏的泄漏气体并且将所述泄漏气体分别冷凝成固相和液相。第三冷凝装置和第四冷凝装置的优点在于,可将分别地为通过第一输送构件的废气和通过排出管道的泄漏气体的气流设定为彼此独立。
根据本发明的第二方面,上述目标是通过用于将材料涂覆于衬底的方法来实现,所述方法包括:通过将材料熔融以形成液体并且将液体蒸发,来将材料蒸发,将处理气体供应至处理腔室,所述气体包括气相材料的一部分;从处理腔室排出废气,所述废气包括处理气体的一部分;将来自废气的材料的至少一部分冷凝以形成冷凝物;将冷凝物供应至液体。
虽然将参考一定数量的优选实施方案描述本发明,但本发明不限于所述优选实施方案。以下讨论的实施方案仅为本发明的可能阐释的实例,并且,本领域技术人员将明白,本发明的优点还可以另一方式实现。
将参考附随图式更详细地描述本发明,在随附图式中:
图1图解地示出根据本发明的用于将材料涂覆于衬底的装置的第一实施方案;
图2图解地示出第二冷凝装置的截面;以及
图3图解地示出根据本发明的用于将材料涂覆于衬底的第二实施方案的一部分。
在图式中,相同对象由相同参考数字表示。
图1图解地示出用于根据预定温度曲线加热衬底以使材料在衬底上结晶的装置1的第一实施方案。这种装置1也称作快速热处理器(RTP)且用于例如由衬底8制造一定数量的光伏太阳能电池。衬底可含有例如玻璃或硼硅酸盐,并且具有例如60×40cm、120×60cm或110×140cm的大小。装置1包括具有分层材料的壳体2,例如,钢板、耐热绝缘材料(例如,岩棉)和石墨层的堆叠。此外,装置包括位于壳体2内部的处理腔室5。处理腔室5具备可借助于门来密封的相应第一开口6和第二开口7,以便衬底8分别经由处理腔室的第一开口和第二开口穿过装置。处理腔室5可由石墨、硼硅酸盐或熔融二氧化硅制成。此外,装置1可具备入口端口3和出口端口4,处理腔室5布置于入口端口3与出口端口4之间。入口端口3和出口端口4可被密封且具备用于允许衬底8进出的门。入口端口和出口端口也可由石墨、硼硅酸盐或熔融二氧化硅制成。此外,处理腔室5可具备例如石英元件9的电加热元件以便在处理腔室5中产生所需温度曲线。曲线内的温度范围在这种情况下可设定在例如300摄氏度至500摄氏度的范围中。
装置可具备输送滚筒15以便经由处理腔室5中的第一开口6和第二开口7将衬底8从入口端口3移至出口端口4。输送滚筒15可由熔融二氧化硅制成并且具有例如80cm的长度和100mm的直径。输送滚筒可具备驱动(未示出)。装置可包括若干(例如三个或五个)处理腔室,其中可能将每一处理腔室设定成所需温度曲线。
输送滚筒15可以可旋转地附接至壳体2以允许在处理腔室5内部输送衬底8。
可选择处理腔室5的尺寸,以使得可在单个处理腔室5中处理若干衬底8。
装置1还可具备气体入口30以允许净化气体(例如,惰性气体,如氮气(N2))流入壳体中,以在壳体2与处理腔室5之间的空间中产生低氧环境,从而防止例如处理腔室5的壁部的石墨材料燃烧。
另外,装置可具备真空泵31以便在壳体2内部施加真空。可将装置内部的压力设定在0.001毫巴与1100毫巴(绝对值)之间的范围中。
装置还具备蒸发器装置10,所述蒸发器装置10经由第一供应管道12和第一入口11连接至处理腔室5。蒸发器装置10经设计来熔融并蒸发将要涂覆于衬底的材料,例如硒,并且可具备电加热元件以便将硒加热至高于硒的熔融温度。可将蒸发装置中的液体硒的温度设定在420℃与500℃之间的范围中。将要涂覆的材料的另一实例可为例如银(Ag)或硫磺(S)。
通过允许例如氮气的输送气体经由单独的入口19流入蒸发器装置10中,蒸汽形式的硒可在处理气体中经由供应管道12和第一入口11传导至处理腔室5。处理气体的温度为例如500℃。
由于衬底8的按需要设定的温度曲线和硒蒸汽的受控蒸汽压力,硒在衬底8上的再结晶可在处理腔室5中在所需相变处发生。
此外,处理腔室5具备第一出口13和第一输送构件,所述第一输送构件例如为:用于从处理腔室排出废气的第一连接管道14。废气包括处理气体的一部分,所述处理气体可包括蒸发的硒和氮气N2并且可能还包括例如硫磺的杂质。废气在其离开处理腔室时的温度为例如500℃。第一输送构件可任选地还包括泵。
此外,装置包括第一冷凝装置16,所述第一冷凝装置16经由第一连接管道14连接至处理腔室5的第一出口13,以便接收废气。第一冷凝装置16经设计来将废气中的气相硒冷凝,所述硒是以例如薄片的固相沉积。这是通过将废气冷却至例如200℃的温度来实现。第一冷凝装置16也称作“冷阱”。第一冷凝装置还可具备例如HEPA过滤器的过滤器40,以便从废气中过滤残余颗粒,以使得只允许输送气体通到泵41。
此外,装置1具备第二冷凝装置17,所述第二冷凝装置17用于将废气中的气相硒的一部分冷凝以形成液相。第二冷凝装置17经由第一连接管道14将第一冷凝装置16连接至处理腔室5。此外,装置具备第二输送构件,例如第二连接管道18,其位于蒸发器装置10与第二冷凝装置17之间,以便将液体硒返回至蒸发器装置10。第二输送构件可能还包括泵。
在实施方案中,装置可具备第三输送构件,例如第三连接管道23,其布置于第二冷凝装置17与第一冷凝装置16之间,并且经设计来将废气从第二冷凝装置输送至第一冷凝装置。
废气在其进入第二冷凝装置17时的温度为例如500℃。将第二冷凝装置17内部的温度设定成例如400℃的温度,废气在这个温度下冷却至硒的露点以下,因此使硒的一部分沉积。离开第二冷凝装置17的残余气体的温度可为例如300℃。第二连接管道18、蒸发器装置10和第二冷凝装置17可以某种方式布置,以使得蒸发器装置10中的将要蒸发的液体硒的第一液位27大致上等于第二冷凝装置17中的液体硒的第二液位20。借助于第二连接管道18,蒸发装置中的被蒸发并排出的硒可部分地补充回收的硒,所述回收的硒经由废气从处理腔室5排出。在这个实施方案中,第二连接管道18连接至第二冷凝装置17的第一末端21并且还充当蒸发器装置10与第二冷凝装置17之间的气体分离。第二冷凝装置17还称作术语“暖阱(warmtrap)”。
图2示意性地示出第二冷凝装置17的截面。此外,第二冷凝装置17可具备加热装置28,所述加热装置28经设计来将液体硒加热至一定温度,所述温度至少高于硒的熔点温度。这个温度为例如300℃。在实施方案中,加热装置经设计来将第二冷凝装置17中的废气加热至一定温度,所述温度至少高于废气中的杂质的露点温度,所述杂质例如为硫磺(S),所述硫磺(S)以蒸汽形式存在于废气中并且可作为残余物经由第三连接管道23排至第一冷凝装置16。在实施方案中,第二冷凝装置17可具备迷宫式系统24,所述迷宫式系统24包括多个板片25以便废气的至少一部分通过,其中迷宫式系统布置于第二冷凝装置17的第一末端21与第二末端22之间。此外,板片可具备孔洞,并且板片可延伸至第二液位20之下。板片25可由陶瓷材料或石墨制成。
过滤部件可任选地布置于第二冷凝装置17中,所述过滤部件确保冷凝的硒从气流中沉积,并且不会作为气溶胶颗粒通过废气流从第二冷凝装置中输送出来。装置1还可具备液位传感器装置26以便记录第二冷凝装置17中的液体硒的液位。液位传感器装置是例如本领域技术人员已知的电容类型。
此外,装置可具备填充装置44以便接收并熔融将要供应的新的硒,所述填充装置连接至第二冷凝装置的第二末端22。
上述装置允许执行用于将材料涂覆于衬底的以下方法,所述方法包括以下步骤:
通过将硒熔融以形成液体并且将液体蒸发,来将例如硒的材料蒸发,
将处理气体供应至处理腔室5,所述气体包括气相硒的一部分;
使来自处理气体的硒的一部分在衬底8上结晶;
从处理腔室5排出废气,所述废气包括处理气体的一部分;
将来自废气的硒的至少一部分冷凝以形成冷凝物;
将冷凝物供应至液体硒。
图3图解地示出用于根据预定温度曲线加热衬底以使材料在衬底上结晶的装置的第二实施方案的一部分。装置100的第二实施方案的构造与装置1的第一实施方案部分地相同。第二实施方案也包括壳体2、处理腔室5、第一冷凝装置(冷阱)16和第二冷凝装置(暖阱)17,如关于图1所描述的。装置可具备输送滚筒15以便经由处理腔室5中的第一开口6和第二开口7将衬底8从入口端口3移至出口端口4。输送滚筒15可由熔融二氧化硅制成,并且具有例如80cm的长度和100mm的直径。装置可包括若干(例如三个或五个)处理腔室,其中可能将每一处理腔室设定成所需温度曲线。
输送滚筒15可以可旋转地附接至壳体以允许在处理腔室5内部输送衬底8。输送滚筒15借助于通路32可旋转地连接至处理腔室5的壁部。通路32可具备密封件,所述密封件含有用于排出泄漏气体的排出管道33,所述泄漏气体包括从处理腔室5泄漏的处理气体和/或从壳体2泄漏的净化气体。排出管道33可邻接处理腔室的输送滚筒15的全部通路32。
第二实施方案还包括:第三冷凝装置36,其具有与第一冷凝装置16相同的构造并且也是冷阱;以及第四冷凝装置37,其具有与第二冷凝装置17相同的构造并且也是暖阱。第三冷凝装置36经由第四冷凝装置37连接至排出管道33。第三冷凝装置36经设计来将来自泄漏气体的气相硒冷凝,其中硒是以例如薄片的固相沉积。
这是通过将废气冷却至例如200℃的温度来实现。
第三冷凝装置36还可具备例如HEPA过滤器40的过滤器40,以便从泄漏气体中过滤残余颗粒,以使得只允许输送气体通到泵42。
装置还具备:第四输送构件,例如第四连接管道38,其位于第四冷凝装置37与第二冷凝装置17之间,以便将第四冷凝装置37间的液体硒经由第四连接管道38、第二冷凝装置17和第二连接管道18输送至蒸发装置10,以使得可重复使用回收的硒。泄漏气体在其进入第四冷凝装置37时的温度为例如500℃。
在实施方案中,装置可具备第五输送构件,例如第五连接管道39,其布置于第四冷凝装置37与第三冷凝装置36之间并且经设计来将泄漏气体从第四冷凝装置37输送至第三冷凝装置36。
分别使用第一冷凝装置16和第二冷凝装置17以及第三冷凝装置36和第四冷凝装置37的优点在于,可将通过第一连接管道14的废气流和通过排出管道33的泄漏气体流设定为大致上彼此独立。
在实施方案中,排出管道还可连接至另一抽气开口,所述抽气开口例如在处理腔室5的可密封开口6、7附近。在另一实施方案中,若干处理腔室5可连接至第二冷凝装置17,并且若干处理腔室的通路32的排出管道33可连接至第四冷凝装置37。
本发明不限于本文所述的本发明的优选实施方案。相反,所寻求的权利由允许许多修改的随附权利要求书限定。
Claims (15)
1.一种用于根据预定温度曲线加热衬底(8)以使材料在所述衬底上结晶的装置(1),所述装置(1)具备
-至少一个处理腔室(5),其具备:
-用于衬底(8)通过的第一可密封开口和第二可密封开口(6;7)、用于将处理气体接收在所述处理腔室中的第一入口(11)和用于从所述处理腔室排出废气的第一输送构件(14);
-蒸发器装置(10),其用于使所述材料蒸发,所述蒸发器装置(10)连接至所述处理腔室(5)以便将所述处理气体供应至所述处理腔室,其中所述处理气体被所述气相材料部分饱和;
第一冷凝装置(16),其用于接收所述废气,所述装置经由第一输送构件(14)连接至所述处理腔室(5)以便将所述废气输送至所述第一冷凝装置(16),其中所述第一冷凝装置(16)经设计来将所述废气中的所述气相材料冷凝以形成固相;
其中所述装置还具备:
第二冷凝装置(17),其用于将所述废气中的所述气相材料的一部分冷凝以形成液相,所述第二冷凝装置(17)经由所述第一输送构件(14)将所述第一冷凝装置(16)连接至所述处理腔室(5);以及
第二输送构件(18),其位于所述蒸发器装置(10)与所述第二冷凝装置(17)之间,以便将冷凝的材料从所述第二冷凝装置(17)输送至所述蒸发器装置(10)。
2.根据权利要求1所述的装置,其中所述第一输送构件包括第一连接管道(14)。
3.根据权利要求1或2所述的装置,其中所述第二输送构件包括第二连接管道(18),其中所述第二连接管道(18)、所述蒸发器装置(10)和所述第二冷凝装置(17)以某种方式布置,以使得将要蒸发的所述液相材料的第一液位(27)大致上等于将要冷凝的所述液相材料的液位(20)。
4.根据权利要求3所述的装置,其中所述第二连接管道(18)连接至所述第二冷凝装置的第一末端(21)。
5.根据权利要求1-4所述的装置,其中所述装置包括第三输送构件(23),所述第三输送构件(23)布置于所述第二冷凝装置(17)与所述第一冷凝装置(16)之间并且经设计来将所述废气从所述第二冷凝装置(17)输送至所述第一冷凝装置(16)。
6.根据权利要求5所述的装置,其中所述第三输送构件包括第三连接管道(23)。
7.根据权利要求1-6所述的装置,其中所述第二冷凝装置(17)具备加热装置(28),所述加热装置(28)经设计来使将要冷凝的所述液态材料加热至一定温度,所述温度至少高于所述材料的熔点温度。
8.根据权利要求7所述的装置,其中所述加热装置(28)经设计来将所述第二冷凝装置中的所述废气加热至一定温度,所述温度至少高于所述废气中的杂质的露点温度。
9.根据权利要求8所述的装置,其中所述杂质包括硫磺。
10.根据权利要求1-9中的一项所述的装置,其中所述第二冷凝装置(17)具备迷宫式系统(24),所述迷宫式系统(24)包括多个板片(25)以便所述废气的至少一部分通过,其中所述迷宫式系统布置于所述第二冷凝装置的第一末端与第二末端之间。
11.根据权利要求10所述的装置,其中所述板片(25)延伸至将要冷凝的所述液相材料的液位(20)之下。
12.根据权利要求1-11中的一项所述的装置,其中所述装置具备:输送轮轴,所述输送轮轴可旋转地布置于所述处理腔室中;和所述处理腔室中的通路,所述通路用于可旋转地附接所述输送轮轴,所述通路(32)具备排出管道(33),所述排出管道(33)连接所述通路以便排出泄漏气体。
13.根据权利要求12所述的装置,其中所述装置具备:第三冷凝装置(36),其用于经由所述第一排出管道(33)接收所述泄漏气体,所述第一排出管道(33)用于将所述泄漏气体输送至所述第三冷凝装置(36),其中所述第三冷凝装置(36)经设计来将所述泄漏气体中的所述气相材料冷凝以形成固相;
第四冷凝装置(37),其用于将所述泄漏气体中的所述气相材料的一部分冷凝以形成液相,所述第四冷凝装置(37)将所述第三冷凝装置(36)连接至所述排出管道(33);以及
第四输送构件(38),其位于所述第四冷凝装置(37)与所述蒸发装置(10)之间,以便将冷凝的材料从所述第四冷凝装置(37)输送至所述蒸发装置(10)。
14.一种用气相材料在处理腔室中处理衬底的方法,所述方法包括:
通过将所述材料熔融以形成液体并将所述液体蒸发,来使所述材料蒸发;
将处理气体供应至所述处理腔室,所述气体包括所述气相材料的一部分;
从所述处理腔室排出废气,所述废气包括所述处理气体的一部分;
将来自所述废气的所述材料的至少一部分冷凝以形成冷凝物;
将所述冷凝物供应至所述液体。
15.根据权利要求14所述的方法,其中所述方法还包括:使所述废气部分地返回至所述处理腔室。
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