CN105470387A - 量子点发光器件及其制备方法及液晶显示装置 - Google Patents
量子点发光器件及其制备方法及液晶显示装置 Download PDFInfo
- Publication number
- CN105470387A CN105470387A CN201610048567.5A CN201610048567A CN105470387A CN 105470387 A CN105470387 A CN 105470387A CN 201610048567 A CN201610048567 A CN 201610048567A CN 105470387 A CN105470387 A CN 105470387A
- Authority
- CN
- China
- Prior art keywords
- quantum dot
- dot light
- light emitting
- hole
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002096 quantum dot Substances 0.000 title claims abstract description 97
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 12
- 238000002347 injection Methods 0.000 claims abstract description 56
- 239000007924 injection Substances 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 229920000547 conjugated polymer Polymers 0.000 claims abstract description 17
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 41
- 230000005540 biological transmission Effects 0.000 claims description 40
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 19
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims description 6
- 239000002105 nanoparticle Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229920000144 PEDOT:PSS Polymers 0.000 claims description 3
- -1 anode Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 230000005525 hole transport Effects 0.000 claims description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 3
- 238000004020 luminiscence type Methods 0.000 claims description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000004528 spin coating Methods 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 231100000252 nontoxic Toxicity 0.000 description 3
- 230000003000 nontoxic effect Effects 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 241001044369 Amphion Species 0.000 description 1
- GXGQRWUAKSASCN-UHFFFAOYSA-N P(=O)(O)(O)N.C(C)O.C(C)O Chemical compound P(=O)(O)(O)N.C(C)O.C(C)O GXGQRWUAKSASCN-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 1
- 229960002796 polystyrene sulfonate Drugs 0.000 description 1
- 239000011970 polystyrene sulfonate Substances 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02601—Nanoparticles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N99/00—Subject matter not provided for in other groups of this subclass
- H10N99/05—Devices based on quantum mechanical effects, e.g. quantum interference devices or metal single-electron transistors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/36—Micro- or nanomaterials
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
本发明提供一种量子点发光器件及其制备方法及液晶显示装置。量子点发光器件包括基板、阳极、空穴注入和空穴传输层、量子点发光层、电子注入和电子传输层及阴极,阳极设置在基板上,阳极与阴极设置在基板的同侧,且相对且间隔设置,空穴注入和空穴传输层、量子点发光层及电子注入和电子传输层依次夹设在阳极和阴极之间,空穴注入和空穴传输层的一面与阳极相连,阳极提供空穴,阴极提供电子,空穴注入和空穴传输层将空穴传输至量子点发光层,电子注入和电子传输层将电子传输至量子点发光层,空穴和电子在量子点发光层中复合以发光,其中,电子注入和电子传输层包括水醇溶性共轭聚合物。
Description
技术领域
本发明涉及显示领域,尤其涉及一种量子点发光器件及其制备方法及液晶显示装置。
背景技术
量子点发光器件,比如,量子点发光二极管(QuantumdotLightEmittingDiode,QLED)因具有色域广、色纯度高、稳定性好、低功耗、低成本等优点被誉为继有机发光器件之后的新一代照明器件。量子点发光二极管包括量子点发光层、空穴传输层及电子传输层。所述电子传输层、所述量子点发光层及所述空穴传输层依次层叠设置。所述电子传输层、所述量子点发光层及所述空穴传输层通常将相应的材料溶解在有机溶剂中,再通过旋涂的方式湿法单独成膜。即,所述电子传输层、所述量子点发光层及所述空穴传输层分为三层来制备。通常,先制备出一层,再接着制备另一层。由于成膜的时候会用到有机溶剂,因此,在量子点发光二极管制备过程中,正在制作的膜层会对已经制作好的相邻的膜层造成破坏,从而造成量子点发光二极管发光效率的降低及制备成功率的降低。
发明内容
本发明提供一种量子点发光器件,所述量子点发光器件包括基板、阳极、空穴注入和空穴传输层、量子点发光层、电子注入和电子传输层及阴极,所述阳极设置在所述基板上,所述阳极与所述阴极设置在所述基板的同侧,且所述阳极和所述阴极相对且间隔设置,所述空穴注入和空穴传输层、所述量子点发光层及所述电子注入和电子传输层夹设在所述阳极和所述阴极之间,所述空穴注入和空穴传输层的一面与所述阳极相连,所述量子点发光层及所述电子注入和电子传输层依次层叠设置在所述空穴注入和空穴传输层远离所述阳极的一面,且所述电子注入和电子传输层远离所述量子点发光层的一面与所述阴极相连,所述阳极用于提供空穴,所述阴极用于提供电子,所述空穴注入和空穴传输层用于将所述空穴传输至所述量子点发光层,所述电子注入和电子传输层用于将所述电子传输至所述量子点发光层,所述空穴和所述电子在所述量子点发光层中复合以发光,其中,所述电子注入和电子传输层包括水醇溶性共轭聚合物。
其中,所述水醇溶性共轭聚合物包括PFN、PFNBr、PFNSO中的任意一种或者多种。
其中,所述阳极包括氧化铟锡。
其中,所述空穴注入和空穴传输层包括PEDOT:PSS或者P型金属氧化物纳米粒子,其中,所述P型金属氧化物纳米粒子包括MoO3、NiO、V2O5及WoO3的任意一种或者多种。
其中,所述空穴注入和空穴传输层的厚度为10~15nm。
其中,所述量子点发光层的厚度为30~40nm。
其中,所述量子点发光层包括单层或者多层量子点。
其中,所述阴极包括铝,所述阴极的厚度为100~150nm。
本发明还提供了一种量子点发光器件的制备方法,所述量子点发光器件的制备方法包括:
提供基板;
在所述基板的表面上形成阳极;
在所述阳极远离所述基板的表面涂布空穴注入和空穴传输材料以形成空穴注入和空穴传输层;
在所述空穴注入和空穴传输层远离所述阳极的表面涂布量子点发光材料以形成量子点发光层;
在所述量子点发光层远离所述空穴注入和空穴传输层的表面涂布电子注入和电子传输材料以形成电子注入和电子传输层,其中,所述电子注入和电子传输层包括水醇溶性共轭聚合物;
在所述电子注入和电子传输层远离所述量子点发光层的表面沉积金属以形成阴极。
本发明还提供了一种液晶显示装置,所述液晶显示装置包括前述任一实施方式所述的量子点发光器件。
相较于现有技术,本发明的量子点发光器件的电子注入和电子传输层包括水醇溶性共轭聚合物可以溶解在极性较大的溶剂中,比如,水、甲醛等。可以避免所述电子注入和电子传输层制备成膜时对所述量子点发光层产生破坏,因此,可以提高所述量子点发光器件的性能。进一步地,所述水醇溶性共轭聚合物是无毒的,在生产过程中对环境无污染,绿色环保。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本发明一较佳实施方式的量子点发光器件的结构示意图。
图2为本发明一较佳实施方式的量子点发光器件的制备方法的流程图。
图3为本发明一较佳实施方式的液晶显示装置的结构示意图。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
请参阅图1,图1为本发明一较佳实施方式的量子点发光器件的结构示意图。所述量子点发光器件100包括基板110、阳极120、空穴注入和空穴传输层130、量子点发光层140、电子注入和电子传输层150及阴极160。所述阳极120设置在所述基板110上,所述阳极120和所述阴极160设置在所述基板110的同侧,且所述阳极120相对且间隔设置。所述空穴注入和空穴传输层130、所述量子点发光层140及所述电子注入和电子传输层150夹设在所述阳极120和所述阴极160之间,所述空穴注入和空穴传输层130的一面与所述阳极120相连,所述量子点发光层140及所述电子注入和电子传输层150依次层叠设置在所述空穴注入和空穴传输层150远离所述阳极120的一面,且所述电子注入和电子传输层150远离所述量子点发光层140的一面与所述阴极160相连。所述阳极120用于提供空穴,所述阴极160用于提供电子,所述空穴注入和空穴传输层130用于将所述空穴传输至所述量子点发光层140,所述电子注入和电子传输层150用于将所述电子传输至所述量子点发光层140,所述空穴和所述电子在所述量子点发光层140中复合以发光,其中,所述电子注入和电子传输层150包括水醇溶性共轭聚合物。
所述水醇溶性共轭聚合物(WACPs)由共轭骨架和含有强极性基团(如胺基、二乙醇胺基、磷酸酯基、羧基、季铵盐、羧酸根、磺酸根、两性离子基团等)的侧链组成,在一实施方式中,所述水醇溶性共轭聚合物包括PFN、PFNBr、PFNSO中的任意一种或者多种。所述水醇溶性共轭聚合物作为所述电子注入和电子传输层的材料,可以溶解在极性较大的溶剂中,比如,水、甲醛等。可以避免所述电子注入和电子传输层150制备时对所述量子点发光层140产生破坏,因此,可以提高所述量子点发光器件100的性能。进一步地,所述水醇溶性共轭聚合物是无毒的,在生产过程中对环境无污染,绿色环保。
所述基板110为透明基板,所述基板110可以为但不仅限于为玻璃、塑料基板等。
所述阳极120包括氧化铟锡(ITO),所述阴极160为金属,比如铝。所述阳极120设置在所述基板110的一表面上。
所述空穴注入和空穴传输层130包括聚(3,4-乙烯二氧噻吩)-聚苯乙烯磺酸(Poly(3,4-ethylenedioxythiophene):polystyrenesulfonate,PEDOT:PSS)或者P型金属氧化物纳米粒子。所述P型金属氧化物纳米粒子包括MoO3、NiO、V2O5及WoO3的任意一种或者多种。优选地,所述空穴注入和空穴传输层130的厚度为10~15nm。
所述量子点发光层140的厚度为30~40nm。所述量子点发光层140包括单层或者多层量子点。
所述电子注入和电子传输层150的厚度可以为5~10nm。
相较于现有技术,本发明的量子点发光器件100中的电子注入和电子传输层150包括水醇溶性共轭聚合物可以溶解在极性较大的溶剂中,比如,水、甲醛等。可以避免所述电子注入和电子传输层150制备成膜时对所述量子点发光层140产生破坏,因此,可以提高所述量子点发光器件100的性能。进一步地,所述水醇溶性共轭聚合物是无毒的,在生产过程中对环境无污染,绿色环保。
下面结合图1及前面对所述量子点发光器件100的介绍,下面对本发明的量子点发光器件的制备方法进行介绍。请参阅图2,图2为本发明一较佳实施方式的量子点发光器件的制备方法的流程图。所述量子点发光器件的制备方法包括但不仅限于以下步骤。
步骤S110,提供基板110。
步骤S120,在所述基板110的表面上形成阳极120。
步骤S130,在所述阳极120远离所述基板110的表面涂布空穴注入和空穴传输材料以形成空穴注入和空穴传输层130。所述空穴注入和空穴传输层130可以由如下方式形成:采用旋涂等方法,在所述阳极120远离所述基板110的表面涂布空穴注入和空穴传输材料,以形成所述空穴注入和空穴传输层130。
步骤S140,在所述空穴注入和空穴传输层130远离所述阳极120的表面涂布量子点发光材料以形成量子点发光层140。所述量子点发光层140可以由如下方式形成:采用旋涂等方法,在所述空穴注入和空穴传输层130远离所述阳极120的表面涂布量子点发光材料,以形成所述量子点发光层140。
步骤S150,在所述量子点发光层140远离所述空穴注入和空穴传输层130的表面涂布电子注入和电子传输材料以形成电子注入和电子传输层150,其中,所述电子注入和电子传输层150包括水醇溶性共轭聚合物。所述电子注入和电子传输层150可以通过如下方式形成:采用旋涂等方法,在所述量子点发光层140远离所述空穴注入和空穴产生层130的表面涂布电子注入和电子传输材料,以形成所述电子注入和电子传输层150。
步骤S160,在所述电子注入和电子传输层150远离所述量子点发光层140的表面沉积金属以形成阴极160。所述阴极160的制备方法可以由如下方式形成:采用蒸镀等方法在所述电子注入和电子传输层150远离所述量子点发光层140的表面形成金属,比如,铝,以制备出所述阴极160。所述阴极160的厚度为100nm~150nm。
本发明还提供了一种液晶显示装置10,请参阅图3,所述液晶显示装置10包括前述介绍的量子点发光器件100,在此不再赘述。所述液晶显示装置10可以包括但不仅限于为智能手机、互联网设备(MobileInternetDevice,MID),电子书,便携式播放站(PlayStationPortable,PSP)或者个人数字助理(PersonalDigitalAssistant,PDA)等便携式电子设备,也可以为显示器等。
以上所揭露的仅为本发明一种较佳实施例而已,当然不能以此来限定本发明之权利范围,本领域普通技术人员可以理解实现上述实施例的全部或部分流程,并依本发明权利要求所作的等同变化,仍属于发明所涵盖的范围。
Claims (10)
1.一种量子点发光器件,其特征在于,所述量子点发光器件包括基板、阳极、空穴注入和空穴传输层、量子点发光层、电子注入和电子传输层及阴极,所述阳极设置在所述基板上,所述阳极与所述阴极设置在所述基板的同侧,且所述阳极和所述阴极相对且间隔设置,所述空穴注入和空穴传输层、所述量子点发光层及所述电子注入和电子传输层夹设在所述阳极和所述阴极之间,所述空穴注入和空穴传输层的一面与所述阳极相连,所述量子点发光层及所述电子注入和电子传输层依次层叠设置在所述空穴注入和空穴传输层远离所述阳极的一面,且所述电子注入和电子传输层远离所述量子点发光层的一面与所述阴极相连,所述阳极用于提供空穴,所述阴极用于提供电子,所述空穴注入和空穴传输层用于将所述空穴传输至所述量子点发光层,所述电子注入和电子传输层用于将所述电子传输至所述量子点发光层,所述空穴和所述电子在所述量子点发光层中复合以发光,其中,所述电子注入和电子传输层包括水醇溶性共轭聚合物。
2.如权利要求1所述的量子点发光器件,其特征在于,所述水醇溶性共轭聚合物包括PFN、PFNBr、PFNSO中的任意一种或者多种。
3.如权利要求1所述的量子点发光器件,其特征在于,所述阳极包括氧化铟锡。
4.如权利要求1所述的量子点发光器件,其特征在于,所述空穴注入和空穴传输层包括PEDOT:PSS或者P型金属氧化物纳米粒子,其中,所述P型金属氧化物纳米粒子包括MoO3、NiO、V2O5及WoO3的任意一种或者多种。
5.如权利要求1所述的量子点发光器件,其特征在于,所述空穴注入和空穴传输层的厚度为10~15nm。
6.如权利要求1所述的量子点发光器件,其特征在于,所述量子点发光层的厚度为30~40nm。
7.如权利要求1所述的量子点发光器件,其特征在于,所述量子点发光层包括单层或者多层量子点。
8.如权利要求1所述的量子点发光器件,其特征在于,所述阴极包括铝,所述阴极的厚度为100~150nm。
9.一种量子点发光器件的制备方法,其特征在于,所述量子点发光器件的制备方法包括:
提供基板;
在所述基板的表面上形成阳极;
在所述阳极远离所述基板的表面涂布空穴注入和空穴传输材料以形成空穴注入和空穴传输层;
在所述空穴注入和空穴传输层远离所述阳极的表面涂布量子点发光材料以形成量子点发光层;
在所述量子点发光层远离所述空穴注入和空穴传输层的表面涂布电子注入和电子传输材料以形成电子注入和电子传输层,其中,所述电子注入和电子传输层包括水醇溶性共轭聚合物;
在所述电子注入和电子传输层远离所述量子点发光层的表面沉积金属以形成阴极。
10.一种液晶显示装置,其特征在于,所述液晶显示装置包括如权利要求1至8任意一项所述的量子点发光器件。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610048567.5A CN105470387A (zh) | 2016-01-25 | 2016-01-25 | 量子点发光器件及其制备方法及液晶显示装置 |
PCT/CN2016/074065 WO2017128457A1 (zh) | 2016-01-25 | 2016-02-18 | 量子点发光器件及其制备方法及液晶显示装置 |
US15/033,623 US10050220B2 (en) | 2016-01-25 | 2016-02-18 | Quantum dot light emitting element including water/alcohol soluble conjugated polymer based electron injection/electron transporting layer, manufacturing method thereof and liquid crystal display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610048567.5A CN105470387A (zh) | 2016-01-25 | 2016-01-25 | 量子点发光器件及其制备方法及液晶显示装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN105470387A true CN105470387A (zh) | 2016-04-06 |
Family
ID=55607898
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610048567.5A Pending CN105470387A (zh) | 2016-01-25 | 2016-01-25 | 量子点发光器件及其制备方法及液晶显示装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10050220B2 (zh) |
CN (1) | CN105470387A (zh) |
WO (1) | WO2017128457A1 (zh) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017128552A1 (zh) * | 2016-01-25 | 2017-08-03 | 深圳市华星光电技术有限公司 | 量子点发光器件及其制备方法及液晶显示装置 |
CN107046107A (zh) * | 2016-12-13 | 2017-08-15 | Tcl集团股份有限公司 | 处理pedot:pss的方法、qled及制备方法 |
CN110165066A (zh) * | 2019-06-10 | 2019-08-23 | 南昌航空大学 | 一种量子点发光二极管及其制备方法 |
CN110739408A (zh) * | 2018-07-18 | 2020-01-31 | Tcl集团股份有限公司 | 量子点发光二极管及其制备方法 |
CN110739404A (zh) * | 2018-07-18 | 2020-01-31 | Tcl集团股份有限公司 | 量子点发光二极管及其制备方法 |
WO2020108070A1 (zh) * | 2018-11-26 | 2020-06-04 | Tcl科技集团股份有限公司 | 一种量子点发光二极管的制备方法 |
CN112086563A (zh) * | 2019-06-12 | 2020-12-15 | Tcl集团股份有限公司 | 量子点发光二极管及其制备方法 |
CN113196880A (zh) * | 2018-12-10 | 2021-07-30 | 夏普株式会社 | 发光元件、发光设备 |
CN114267799A (zh) * | 2020-09-16 | 2022-04-01 | Tcl科技集团股份有限公司 | 一种量子点发光二极管及其制备方法 |
CN114267814A (zh) * | 2020-09-16 | 2022-04-01 | Tcl科技集团股份有限公司 | 一种量子点发光二极管及其制备方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108767126B (zh) * | 2018-05-28 | 2020-07-17 | 京东方科技集团股份有限公司 | 一种qled器件及其制作方法 |
KR20210034953A (ko) | 2019-09-23 | 2021-03-31 | 삼성전자주식회사 | 발광소자, 발광소자의 제조 방법과 표시 장치 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201985178U (zh) * | 2010-10-09 | 2011-09-21 | 中国计量学院 | 一种光子晶体结构量子点有机发光二极管发光装置 |
CN102263205A (zh) * | 2011-07-25 | 2011-11-30 | 华南理工大学 | 可交联共轭聚合物材料在倒装有机光电器件中的应用 |
WO2013103440A1 (en) * | 2012-01-06 | 2013-07-11 | Qd Vision, Inc. | Light emitting device including blue emitting quantum dots and method |
CN103427030A (zh) * | 2012-05-31 | 2013-12-04 | 上海理工大学 | 量子点白光发光器件 |
CN103972416A (zh) * | 2014-05-15 | 2014-08-06 | 华北电力大学 | 基于反向结构的半导体量子点发光二极管及其制备方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100224859A1 (en) * | 2007-10-16 | 2010-09-09 | Hcf Partners, Lp | Organic Light-Emitting Diodes with Electrophosphorescent-Coated Emissive Quantum Dots |
WO2010048319A1 (en) | 2008-10-21 | 2010-04-29 | The Regents Of The University Of California | Cationic conjugated polyelectrolyte electron injection layers altered with counter anions having oxidative properties |
KR101173105B1 (ko) * | 2010-05-24 | 2012-08-14 | 한국과학기술원 | 유기발광소자 |
KR20150033198A (ko) | 2013-09-23 | 2015-04-01 | 삼성디스플레이 주식회사 | 양자점 발광 소자 및 표시 장치 |
CN105185919B (zh) * | 2015-09-02 | 2019-01-18 | Tcl集团股份有限公司 | 混合型qled及其制备方法 |
CN105140361B (zh) | 2015-09-11 | 2019-08-27 | Tcl集团股份有限公司 | 量子点发光二极管及其制备方法 |
CN105206761B (zh) | 2015-09-25 | 2017-11-17 | 南方科技大学 | 一种发光二极管及其制备方法 |
-
2016
- 2016-01-25 CN CN201610048567.5A patent/CN105470387A/zh active Pending
- 2016-02-18 WO PCT/CN2016/074065 patent/WO2017128457A1/zh active Application Filing
- 2016-02-18 US US15/033,623 patent/US10050220B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201985178U (zh) * | 2010-10-09 | 2011-09-21 | 中国计量学院 | 一种光子晶体结构量子点有机发光二极管发光装置 |
CN102263205A (zh) * | 2011-07-25 | 2011-11-30 | 华南理工大学 | 可交联共轭聚合物材料在倒装有机光电器件中的应用 |
WO2013103440A1 (en) * | 2012-01-06 | 2013-07-11 | Qd Vision, Inc. | Light emitting device including blue emitting quantum dots and method |
CN103427030A (zh) * | 2012-05-31 | 2013-12-04 | 上海理工大学 | 量子点白光发光器件 |
CN103972416A (zh) * | 2014-05-15 | 2014-08-06 | 华北电力大学 | 基于反向结构的半导体量子点发光二极管及其制备方法 |
Non-Patent Citations (3)
Title |
---|
MICHAEL J. HARTEL等: "Interlayers for Efficient Electron Injection in Polymer LEDs", 《JOURNAL OF DISPLAY TECHNOLOGY》 * |
WEI JIANG等: "Alcohol-Soluble Electron-Transport Small Molecule for Fully Solution-Processed Multilayer White Electrophosphorescent Devices", 《ORGANIC LETTERS》 * |
YU-YING LAI等: "Interface Engineering to Enhance the Efficiency of Conventional Polymer Solar Cells by Alcohol-/Water-Soluble C60 Materials Doped with Alkali Carbonates", 《APPLIED MATERIALS & INTERFACES》 * |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017128552A1 (zh) * | 2016-01-25 | 2017-08-03 | 深圳市华星光电技术有限公司 | 量子点发光器件及其制备方法及液晶显示装置 |
US10115921B2 (en) | 2016-01-25 | 2018-10-30 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Quantum dot light emitting element, method of fabricating the same, and liquid-crystal display |
CN107046107A (zh) * | 2016-12-13 | 2017-08-15 | Tcl集团股份有限公司 | 处理pedot:pss的方法、qled及制备方法 |
CN110739404B (zh) * | 2018-07-18 | 2021-04-02 | Tcl科技集团股份有限公司 | 量子点发光二极管及其制备方法 |
CN110739408A (zh) * | 2018-07-18 | 2020-01-31 | Tcl集团股份有限公司 | 量子点发光二极管及其制备方法 |
CN110739404A (zh) * | 2018-07-18 | 2020-01-31 | Tcl集团股份有限公司 | 量子点发光二极管及其制备方法 |
CN110739408B (zh) * | 2018-07-18 | 2021-06-29 | Tcl科技集团股份有限公司 | 量子点发光二极管及其制备方法 |
US11485908B2 (en) | 2018-07-18 | 2022-11-01 | Tcl Technology Group Corporation | Quantum dot light-emitting diode and method for fabricating the same |
WO2020108070A1 (zh) * | 2018-11-26 | 2020-06-04 | Tcl科技集团股份有限公司 | 一种量子点发光二极管的制备方法 |
CN113196880A (zh) * | 2018-12-10 | 2021-07-30 | 夏普株式会社 | 发光元件、发光设备 |
CN110165066A (zh) * | 2019-06-10 | 2019-08-23 | 南昌航空大学 | 一种量子点发光二极管及其制备方法 |
CN112086563A (zh) * | 2019-06-12 | 2020-12-15 | Tcl集团股份有限公司 | 量子点发光二极管及其制备方法 |
CN114267799A (zh) * | 2020-09-16 | 2022-04-01 | Tcl科技集团股份有限公司 | 一种量子点发光二极管及其制备方法 |
CN114267814A (zh) * | 2020-09-16 | 2022-04-01 | Tcl科技集团股份有限公司 | 一种量子点发光二极管及其制备方法 |
CN114267814B (zh) * | 2020-09-16 | 2023-12-26 | Tcl科技集团股份有限公司 | 一种量子点发光二极管及其制备方法 |
CN114267799B (zh) * | 2020-09-16 | 2024-02-20 | Tcl科技集团股份有限公司 | 一种量子点发光二极管及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2017128457A1 (zh) | 2017-08-03 |
US20180047923A1 (en) | 2018-02-15 |
US10050220B2 (en) | 2018-08-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105470387A (zh) | 量子点发光器件及其制备方法及液晶显示装置 | |
CN105679955A (zh) | 量子点发光器件及其制备方法及液晶显示装置 | |
CN105655495A (zh) | 量子点发光器件及其制备方法及液晶显示装置 | |
KR101173105B1 (ko) | 유기발광소자 | |
CN1841812B (zh) | 有机电激发光元件 | |
KR101366655B1 (ko) | 유기 전자 장치들의 처리 및 성능을 개선하기 위한중성화된 애노드 버퍼층들 | |
US9740073B2 (en) | Complex display device | |
CN105489782A (zh) | 量子点发光器件及量子点发光器件的制备方法 | |
CN105470408A (zh) | 用于打印成膜工艺的凹槽结构及其制作方法 | |
CN105679954A (zh) | 量子点发光器件及其制备方法及液晶显示装置 | |
US9601711B2 (en) | Composition for forming transparent electrode, transparent electrode, organic electronic element, and method for manufacturing transparent electrode | |
CN108461651A (zh) | 像素结构及其制备方法、显示面板 | |
JPWO2017010124A1 (ja) | 有機薄膜積層体及び有機エレクトロルミネッセンス素子 | |
US20150090336A1 (en) | Organic-inorganic hybrid light emitting device, method for manufacturing the same, and organic-inorganic hybrid solar cell | |
CN105355798A (zh) | 有机电致发光器件及其制作方法、显示装置 | |
CN104617235A (zh) | 一种有机电致发光显示器件、其制作方法及显示装置 | |
CN101222026B (zh) | 有机发光二极管显示装置及其制造方法 | |
JP2017022063A (ja) | 有機薄膜積層体の製造方法及び有機エレクトロルミネッセンス素子の製造方法 | |
WO2021093027A1 (zh) | 一种有机发光器件 | |
CN110643346A (zh) | 量子点的配位方法、量子点以及显示装置 | |
CN102403462A (zh) | 有机发光二极管及其制造方法 | |
CN108400250A (zh) | 基于高功函数金属阴极的有机电致发光器件及其制备方法 | |
CN103943783B (zh) | 一种有机发光器件及显示装置 | |
CN205264760U (zh) | 有机电致发光器件和显示装置 | |
CN105161626A (zh) | 一种掺杂的纳米锡化物有机发光器件 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160406 |