CN105470304B - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

Info

Publication number
CN105470304B
CN105470304B CN201510612562.6A CN201510612562A CN105470304B CN 105470304 B CN105470304 B CN 105470304B CN 201510612562 A CN201510612562 A CN 201510612562A CN 105470304 B CN105470304 B CN 105470304B
Authority
CN
China
Prior art keywords
electrode
semiconductor device
layer
insulating film
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201510612562.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN105470304A (zh
Inventor
伊奈务
冈彻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Publication of CN105470304A publication Critical patent/CN105470304A/zh
Application granted granted Critical
Publication of CN105470304B publication Critical patent/CN105470304B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
CN201510612562.6A 2014-09-26 2015-09-23 半导体装置及其制造方法 Active CN105470304B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014196498A JP6194869B2 (ja) 2014-09-26 2014-09-26 半導体装置およびその製造方法
JP2014-196498 2014-09-26

Publications (2)

Publication Number Publication Date
CN105470304A CN105470304A (zh) 2016-04-06
CN105470304B true CN105470304B (zh) 2018-09-14

Family

ID=55585341

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510612562.6A Active CN105470304B (zh) 2014-09-26 2015-09-23 半导体装置及其制造方法

Country Status (3)

Country Link
US (1) US9831311B2 (https=)
JP (1) JP6194869B2 (https=)
CN (1) CN105470304B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6791083B2 (ja) * 2017-09-28 2020-11-25 豊田合成株式会社 半導体装置の製造方法
JP6927116B2 (ja) * 2018-03-28 2021-08-25 豊田合成株式会社 半導体装置
WO2021033664A1 (ja) * 2019-08-21 2021-02-25 株式会社村田製作所 半導体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3133759A1 (de) * 1981-08-04 1983-02-24 SILICONIX Inc., 95054 Santa Clara, Calif. Feldeffekttransistor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6237965A (ja) * 1985-08-13 1987-02-18 Tdk Corp 縦形半導体装置およびその製造方法
JPH023980A (ja) * 1988-06-22 1990-01-09 Nissan Motor Co Ltd 縦型電界効果トランジスタ
JPH06120356A (ja) * 1992-10-01 1994-04-28 Fujitsu Ltd 半導体装置及びその製造方法
JP3154364B2 (ja) 1994-01-28 2001-04-09 日亜化学工業株式会社 ｎ型窒化ガリウム系化合物半導体層の電極及びその形成方法
DE69433926T2 (de) 1993-04-28 2005-07-21 Nichia Corp., Anan Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung
JP2637937B2 (ja) * 1995-01-30 1997-08-06 関西日本電気株式会社 電界効果トランジスタの製造方法
JP5420157B2 (ja) * 2007-06-08 2014-02-19 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
US9099433B2 (en) * 2012-04-23 2015-08-04 Freescale Semiconductor, Inc. High speed gallium nitride transistor devices
JP6007769B2 (ja) * 2012-12-14 2016-10-12 豊田合成株式会社 半導体装置
US9685345B2 (en) * 2013-11-19 2017-06-20 Nxp Usa, Inc. Semiconductor devices with integrated Schottky diodes and methods of fabrication

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3133759A1 (de) * 1981-08-04 1983-02-24 SILICONIX Inc., 95054 Santa Clara, Calif. Feldeffekttransistor

Also Published As

Publication number Publication date
CN105470304A (zh) 2016-04-06
JP6194869B2 (ja) 2017-09-13
US20160093703A1 (en) 2016-03-31
US9831311B2 (en) 2017-11-28
JP2016072265A (ja) 2016-05-09

Similar Documents

Publication Publication Date Title
CN105390539B (zh) 半导体器件
TWI627752B (zh) 半導體裝置
CN101897029B (zh) 绝缘栅e模式晶体管
JP6341077B2 (ja) 半導体装置の製造方法
US10784361B2 (en) Semiconductor device and method for manufacturing the same
JP2008277640A (ja) 窒化物半導体素子
CN1890814A (zh) Ⅲ族－氮化物器件的钝化及其方法
CN105814673B (zh) 半导体装置及其制造方法
US12426336B2 (en) Semiconductor device, and method of manufacturing semiconductor device
JP6272557B2 (ja) 窒化物半導体電界効果トランジスタ
CN101924128A (zh) 场效应晶体管
TW201737395A (zh) 半導體裝置及半導體裝置的製造方法
JP6327139B2 (ja) 半導体装置およびその製造方法
JP5827529B2 (ja) 窒化物半導体装置およびその製造方法
US10497572B2 (en) Method for manufacturing semiconductor device
CN105470304B (zh) 半导体装置及其制造方法
JP6530210B2 (ja) 半導体装置及びその製造方法
US9349856B2 (en) Semiconductor device including first interface and second interface as an upper surface of a convex protruded from first interface and manufacturing device thereof
JP6406080B2 (ja) 半導体装置の製造方法
WO2013084726A1 (ja) 電界効果トランジスタ
JP2018160668A (ja) 窒化物半導体装置
CN108574001A (zh) 半导体装置
CN106558601A (zh) 半导体装置及其制造方法
TWI637511B (zh) 增強型高電子遷移率電晶體及其形成方法
JP6176677B2 (ja) 窒化物半導体装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant