CN105453248B - 用于热处理腔室的支撑圆柱 - Google Patents

用于热处理腔室的支撑圆柱 Download PDF

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Publication number
CN105453248B
CN105453248B CN201480043642.8A CN201480043642A CN105453248B CN 105453248 B CN105453248 B CN 105453248B CN 201480043642 A CN201480043642 A CN 201480043642A CN 105453248 B CN105453248 B CN 105453248B
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CN
China
Prior art keywords
peripheral surface
support cylinder
inner peripheral
transparent layer
optically transparent
Prior art date
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Active
Application number
CN201480043642.8A
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English (en)
Chinese (zh)
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CN105453248A (zh
Inventor
梅兰·贝德亚特
阿伦·缪尔·亨特
约瑟夫·M·拉内什
诺曼·L·塔姆
杰弗里·托宾
继平·李
马丁·德兰
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Applied Materials Inc
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Applied Materials Inc
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Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to CN201710619830.6A priority Critical patent/CN107342253B/zh
Priority to CN201710952706.1A priority patent/CN107731718B/zh
Publication of CN105453248A publication Critical patent/CN105453248A/zh
Application granted granted Critical
Publication of CN105453248B publication Critical patent/CN105453248B/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • General Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Mechanical Engineering (AREA)
CN201480043642.8A 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱 Active CN105453248B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201710619830.6A CN107342253B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱
CN201710952706.1A CN107731718B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361866379P 2013-08-15 2013-08-15
US61/866,379 2013-08-15
US14/298,389 US9385004B2 (en) 2013-08-15 2014-06-06 Support cylinder for thermal processing chamber
US14/298,389 2014-06-06
PCT/US2014/042025 WO2015023352A1 (en) 2013-08-15 2014-06-12 Support cylinder for thermal processing chamber

Related Child Applications (2)

Application Number Title Priority Date Filing Date
CN201710952706.1A Division CN107731718B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱
CN201710619830.6A Division CN107342253B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱

Publications (2)

Publication Number Publication Date
CN105453248A CN105453248A (zh) 2016-03-30
CN105453248B true CN105453248B (zh) 2019-12-10

Family

ID=52467142

Family Applications (3)

Application Number Title Priority Date Filing Date
CN201710619830.6A Active CN107342253B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱
CN201480043642.8A Active CN105453248B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱
CN201710952706.1A Active CN107731718B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201710619830.6A Active CN107342253B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201710952706.1A Active CN107731718B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱

Country Status (6)

Country Link
US (3) US9385004B2 (enExample)
JP (2) JP6453882B2 (enExample)
KR (2) KR101966566B1 (enExample)
CN (3) CN107342253B (enExample)
TW (3) TWI656598B (enExample)
WO (1) WO2015023352A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11201508512PA (en) * 2013-05-23 2015-12-30 Applied Materials Inc A coated liner assembly for a semiconductor processing chamber
US9385004B2 (en) * 2013-08-15 2016-07-05 Applied Materials, Inc. Support cylinder for thermal processing chamber
US9330955B2 (en) * 2013-12-31 2016-05-03 Applied Materials, Inc. Support ring with masked edge
CN108352297B (zh) * 2015-12-07 2023-04-28 应用材料公司 合并式盖环
TWI776859B (zh) * 2017-03-06 2022-09-11 美商應用材料股份有限公司 旋轉器蓋
US11004704B2 (en) 2017-03-17 2021-05-11 Applied Materials, Inc. Finned rotor cover
CN110071064A (zh) * 2018-01-22 2019-07-30 上海新昇半导体科技有限公司 一种改善外延片污染印记的方法
CN111819679A (zh) * 2018-03-13 2020-10-23 应用材料公司 具有等离子体喷涂涂层的支撑环
CN109148353A (zh) * 2018-08-15 2019-01-04 深圳市华星光电技术有限公司 一种基板承托盘
JP7178823B2 (ja) * 2018-08-17 2022-11-28 東京応化工業株式会社 基板加熱装置および基板処理システム
DE102019104433A1 (de) * 2019-02-21 2020-08-27 Aixtron Se CVD-Reaktor mit Mitteln zur lokalen Beeinflussung der Suszeptortemperatur
JP7461214B2 (ja) * 2020-05-19 2024-04-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
KR102787323B1 (ko) 2020-09-24 2025-03-27 삼성전자주식회사 플라즈마 처리 장치 및 플라즈마 처리 방법
US20240247404A1 (en) * 2023-01-25 2024-07-25 Applied Materials, Inc. Pre-heat rings and processing chambers including black quartz, and related methods

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6200388B1 (en) * 1998-02-11 2001-03-13 Applied Materials, Inc. Substrate support for a thermal processing chamber
CN1574208A (zh) * 2003-06-16 2005-02-02 应用材料公司 用于热处理室的圆筒
US20080092821A1 (en) * 2004-08-24 2008-04-24 Shin-Etsu Handotai Co., Ltd. Quartz Jig and Semiconductor Manufacturing Apparatus
EP2048121A1 (en) * 2007-10-11 2009-04-15 Heraeus Quarzglas GmbH & Co. KG A black synthetic quartz glass with a transparent layer

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US960555A (en) * 1906-02-08 1910-06-07 Joseph Johnson Basket.
US5960555A (en) 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
US6395363B1 (en) * 1996-11-05 2002-05-28 Applied Materials, Inc. Sloped substrate support
US6133152A (en) 1997-05-16 2000-10-17 Applied Materials, Inc. Co-rotating edge ring extension for use in a semiconductor processing chamber
US6048403A (en) 1998-04-01 2000-04-11 Applied Materials, Inc. Multi-ledge substrate support for a thermal processing chamber
JP2000256037A (ja) * 1999-03-05 2000-09-19 Tosoh Corp 透明部を有する黒色石英ガラス及びその製造方法
JP4969732B2 (ja) * 2001-03-14 2012-07-04 東京エレクトロン株式会社 加熱装置、熱処理装置及びランプ冷却方法
KR100913116B1 (ko) 2002-04-04 2009-08-19 토소가부시키가이샤 석영유리 용사부품 및 그 제조방법
US7704327B2 (en) * 2002-09-30 2010-04-27 Applied Materials, Inc. High temperature anneal with improved substrate support
JP2007042844A (ja) * 2005-08-03 2007-02-15 Furukawa Co Ltd 気相成長装置及びサセプタ
WO2008069194A1 (ja) 2006-12-05 2008-06-12 Shin-Etsu Quartz Products Co., Ltd. 合成不透明石英ガラス及びその製造方法
US7378618B1 (en) * 2006-12-14 2008-05-27 Applied Materials, Inc. Rapid conductive cooling using a secondary process plane
WO2009155117A2 (en) * 2008-05-30 2009-12-23 Applied Materials, Inc. Method and apparatus for detecting the substrate temperature in a laser anneal system
JP5441243B2 (ja) 2009-02-24 2014-03-12 信越石英株式会社 赤外線透過性部材の熱処理用石英ガラス治具
JP5545090B2 (ja) * 2010-07-13 2014-07-09 株式会社Ｓｕｍｃｏ ウェーハ支持治具及び軸状部材並びにシリコンウェーハの熱処理方法
JP5583082B2 (ja) * 2011-06-21 2014-09-03 信越石英株式会社 透明層付き黒色合成石英ガラスの製造方法
US9385004B2 (en) * 2013-08-15 2016-07-05 Applied Materials, Inc. Support cylinder for thermal processing chamber

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Publication number Priority date Publication date Assignee Title
US6200388B1 (en) * 1998-02-11 2001-03-13 Applied Materials, Inc. Substrate support for a thermal processing chamber
CN1574208A (zh) * 2003-06-16 2005-02-02 应用材料公司 用于热处理室的圆筒
US20080092821A1 (en) * 2004-08-24 2008-04-24 Shin-Etsu Handotai Co., Ltd. Quartz Jig and Semiconductor Manufacturing Apparatus
EP2048121A1 (en) * 2007-10-11 2009-04-15 Heraeus Quarzglas GmbH & Co. KG A black synthetic quartz glass with a transparent layer

Also Published As

Publication number Publication date
US20150050819A1 (en) 2015-02-19
CN105453248A (zh) 2016-03-30
TWI604559B (zh) 2017-11-01
CN107342253B (zh) 2021-12-28
TW201507056A (zh) 2015-02-16
WO2015023352A1 (en) 2015-02-19
JP2019071439A (ja) 2019-05-09
CN107731718B (zh) 2022-05-17
CN107731718A (zh) 2018-02-23
TWI656598B (zh) 2019-04-11
TWI688040B (zh) 2020-03-11
KR20160044002A (ko) 2016-04-22
JP6688865B2 (ja) 2020-04-28
TW201816932A (zh) 2018-05-01
TW201931516A (zh) 2019-08-01
JP2016534558A (ja) 2016-11-04
US10128144B2 (en) 2018-11-13
US20160300752A1 (en) 2016-10-13
CN107342253A (zh) 2017-11-10
US9659809B2 (en) 2017-05-23
KR101966566B1 (ko) 2019-04-05
KR101713078B1 (ko) 2017-03-09
JP6453882B2 (ja) 2019-01-16
KR20170026647A (ko) 2017-03-08
US9385004B2 (en) 2016-07-05
US20170263493A1 (en) 2017-09-14

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