CN105446000A - 护眼式液晶显示装置的制作方法 - Google Patents
护眼式液晶显示装置的制作方法 Download PDFInfo
- Publication number
- CN105446000A CN105446000A CN201610040715.9A CN201610040715A CN105446000A CN 105446000 A CN105446000 A CN 105446000A CN 201610040715 A CN201610040715 A CN 201610040715A CN 105446000 A CN105446000 A CN 105446000A
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- Prior art keywords
- layer
- light
- liquid crystal
- polysilicon section
- crystal indicator
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 78
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 239000000463 material Substances 0.000 claims abstract description 56
- 229940124543 ultraviolet light absorber Drugs 0.000 claims abstract description 26
- 239000006097 ultraviolet radiation absorber Substances 0.000 claims abstract description 26
- 239000010410 layer Substances 0.000 claims description 155
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 55
- 229920005591 polysilicon Polymers 0.000 claims description 55
- 239000010408 film Substances 0.000 claims description 29
- 239000011229 interlayer Substances 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- 239000012212 insulator Substances 0.000 claims description 24
- 239000012528 membrane Substances 0.000 claims description 22
- 238000002161 passivation Methods 0.000 claims description 19
- 239000011572 manganese Substances 0.000 claims description 12
- 239000011159 matrix material Substances 0.000 claims description 12
- 238000000926 separation method Methods 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 230000002745 absorbent Effects 0.000 claims description 6
- 239000002250 absorbent Substances 0.000 claims description 6
- 239000006096 absorbing agent Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 229910052748 manganese Inorganic materials 0.000 claims description 6
- QUAMTGJKVDWJEQ-UHFFFAOYSA-N octabenzone Chemical compound OC1=CC(OCCCCCCCC)=CC=C1C(=O)C1=CC=CC=C1 QUAMTGJKVDWJEQ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- NZHUJLHTFYBZRX-UHFFFAOYSA-N 2,4-bis(2-methylbutan-2-yl)-6-phenylphenol Chemical compound C(C)(C)(CC)C1=C(C(=CC(=C1)C(C)(C)CC)C1=CC=CC=C1)O NZHUJLHTFYBZRX-UHFFFAOYSA-N 0.000 claims description 3
- IYAZLDLPUNDVAG-UHFFFAOYSA-N 2-(benzotriazol-2-yl)-4-(2,4,4-trimethylpentan-2-yl)phenol Chemical compound CC(C)(C)CC(C)(C)C1=CC=C(O)C(N2N=C3C=CC=CC3=N2)=C1 IYAZLDLPUNDVAG-UHFFFAOYSA-N 0.000 claims description 3
- UPALIKSFLSVKIS-UHFFFAOYSA-N 5-amino-2-[2-(dimethylamino)ethyl]benzo[de]isoquinoline-1,3-dione Chemical compound NC1=CC(C(N(CCN(C)C)C2=O)=O)=C3C2=CC=CC3=C1 UPALIKSFLSVKIS-UHFFFAOYSA-N 0.000 claims description 3
- 241001211977 Bida Species 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052693 Europium Inorganic materials 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 3
- 229910017848 MgGa2O4 Inorganic materials 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910009372 YVO4 Inorganic materials 0.000 claims description 3
- OKWWNWXAVYZDCP-UHFFFAOYSA-N [Na].C1(=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)C=CC1=CC=CC=C1 Chemical compound [Na].C1(=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)C=CC1=CC=CC=C1 OKWWNWXAVYZDCP-UHFFFAOYSA-N 0.000 claims description 3
- LINPWOVKGIEMIV-UHFFFAOYSA-N [Sr].[Zn].P(O)(O)(O)=O Chemical compound [Sr].[Zn].P(O)(O)(O)=O LINPWOVKGIEMIV-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- 150000001565 benzotriazoles Chemical class 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229950002083 octabenzone Drugs 0.000 claims description 3
- DXGLGDHPHMLXJC-UHFFFAOYSA-N oxybenzone Chemical compound OC1=CC(OC)=CC=C1C(=O)C1=CC=CC=C1 DXGLGDHPHMLXJC-UHFFFAOYSA-N 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 claims description 3
- 125000005420 sulfonamido group Chemical group S(=O)(=O)(N*)* 0.000 claims description 3
- 229910052841 tephroite Inorganic materials 0.000 claims description 3
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 3
- 229930192474 thiophene Natural products 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 150000003852 triazoles Chemical class 0.000 claims description 3
- 229910052844 willemite Inorganic materials 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 210000001508 eye Anatomy 0.000 abstract description 20
- 238000004020 luminiscence type Methods 0.000 abstract 2
- 230000035515 penetration Effects 0.000 abstract 1
- 230000000903 blocking effect Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RQIPKMUHKBASFK-UHFFFAOYSA-N [O-2].[Zn+2].[Ge+2].[In+3] Chemical compound [O-2].[Zn+2].[Ge+2].[In+3] RQIPKMUHKBASFK-UHFFFAOYSA-N 0.000 description 1
- -1 aluminium tin-oxide Chemical compound 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 210000005252 bulbus oculi Anatomy 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 210000001525 retina Anatomy 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133621—Illuminating devices providing coloured light
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
- G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1341—Filling or closing of cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/133357—Planarisation layers
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/13356—Structural association of cells with optical devices, e.g. polarisers or reflectors characterised by the placement of the optical elements
- G02F1/133562—Structural association of cells with optical devices, e.g. polarisers or reflectors characterised by the placement of the optical elements on the viewer side
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
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- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
- G02F1/13685—Top gates
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- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/08—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 light absorbing layer
- G02F2201/086—UV absorbing
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Abstract
本发明提供一种护眼式液晶显示装置的制作方法,通过在阵列基板(100)的第一平坦层(70)、及彩膜基板(200)的第二平坦层(240)中添加紫外发光材料和紫外线吸收剂,使得紫外线吸收剂吸收背光模组发出的波长在400nm以下的短波蓝光及紫外光,同时吸收的短波蓝光及紫外光激发所述紫外发光材料发出波长为400nm以上的长波蓝色可见光,即通过第一平坦层(70)与第二平坦层(240)将损害人眼的紫外光及波长在400nm以下的短波蓝光转化为对人眼没有伤害的波长为400nm以上的长波蓝色可见光,既保护人眼,又不会降低液晶显示面板的显示亮度,保证液晶显示装置的背光率和穿透率。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种护眼式液晶显示装置的制作方法。
背景技术
随着显示技术的发展,液晶显示器(LiquidCrystalDisplay,LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点,而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品,成为显示装置中的主流。
现有市场上的液晶显示装置大部分为背光型液晶显示器,其包括液晶显示面板及背光模组(backlightmodule)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子,两片玻璃基板中间有许多垂直和水平的细小电线,通过通电与否来控制液晶分子改变方向,将背光模组的光线折射出来产生画面。
通常液晶显示面板由彩膜(CF,ColorFilter)基板、薄膜晶体管(TFT,ThinFilmTransistor)基板、夹于彩膜基板与薄膜晶体管基板之间的液晶(LC,LiquidCrystal)及密封胶框(Sealant)组成,其成型工艺一般包括:前段阵列(Array)制程(薄膜、黄光、蚀刻及剥膜)、中段成盒(Cell)制程(TFT基板与CF基板贴合)及后段模组组装制程(驱动IC与印刷电路板压合)。其中,前段Array制程主要是形成TFT基板,以便于控制液晶分子的运动;中段Cell制程主要是在TFT基板与CF基板之间添加液晶;后段模组组装制程主要是驱动IC压合与印刷电路板的整合,进而驱动液晶分子转动,显示图像。
随着科技的发展,人们对液晶显示装置的依赖性越来越强烈,因此人们也越来越重视液晶显示装置对人体的危害。液晶显示装置发出的短波蓝光,其具有仅次于紫外线的能量,能够轻易的穿透眼球,直达视网膜,因此对人眼具有一定的损害。现有的一些具有护眼功能的液晶显示装置,其通过在液晶显示面板的出光侧粘贴防蓝光保护膜,以过滤掉波长在400nm以下的蓝光,但是防蓝光保护膜同时会降低液晶显示面板的显示亮度,从而影响液晶显示装置的背光率和穿透率。
故,有必要提供一种护眼式液晶显示装置的制作方法,以解决现有技术所存在的问题。
发明内容
本发明的目的在于提供一种护眼式液晶显示装置的制作方法,将损害人眼的紫外光及波长在400nm以下的短波蓝光转化为对人眼没有伤害的波长为400nm以上的长波蓝色可见光,既保护人眼,又不会降低液晶显示面板的显示亮度,保证液晶显示装置的背光率和穿透率。
为实现上述目的,本发明提供一种护眼式液晶显示装置的制作方法,包括如下步骤:
步骤1、制作一阵列基板,所述阵列基板包括第一衬底基板,位于第一衬底基板上的遮光层,位于遮光层、及基板上的缓冲层,位于所述缓冲层上的第一多晶硅段与第二多晶硅段,位于第一多晶硅段、第二多晶硅段、及缓冲层上的栅极绝缘层,位于所述栅极绝缘层上的第一栅极与第二栅极,位于所述第一栅极、第二栅极、及栅极绝缘层上的层间绝缘层,位于层间绝缘层上的第一源极、第一漏极、第二源极、第二漏极,位于所述第一源极、第一漏极、第二源极、第二漏极、及层间绝缘层上的第一平坦层,位于第一平坦层上的公共电极,位于公共电极、及第一平坦层上的钝化层,以及位于钝化层上的像素电极;其中,所述第一平坦层中含有紫外发光材料和紫外线吸收剂;
步骤2、制作一彩膜基板,所述彩膜基板包括第二衬底基板、设于所述第二衬底基板上的黑色矩阵、设于所述黑色矩阵及第二衬底基板上的彩色光阻层、设于彩色光阻层上的第二平坦层、以及设于所述第二平坦层上的数个光阻间隙物;其中,所述第二平坦层中含有紫外发光材料和紫外线吸收剂;
步骤3、将所述阵列基板与彩膜基板对组,在所述阵列基板与彩膜基板之间注入液晶分子,密封后,得到一护眼式液晶显示面板;提供一背光模组,将所述护眼式液晶显示面板与背光模组组合后,制得一护眼式液晶显示装置;
所述阵列基板的第一平坦层、及所述彩膜基板的第二平坦层中的紫外线吸收剂可以吸收背光模组发出的波长在400nm以下的短波蓝光及紫外光,同时吸收的短波蓝光及紫外光可以激发所述紫外发光材料发出波长为400nm以上的长波蓝色可见光,从而既实现护眼功能,又不会降低液晶显示面板的显示亮度。
所述紫外发光材料为无机紫外发光材料或有机紫外发光材料。
所述无机紫外发光材料为3Ca3(PO4)2·Ca(F,Cl)2:Sb,Mn、Y2O3:Eu、MgAl11O19:Ce,Tb、BaMg2Al16O27:Eu、锰激活的氟锗酸镁粉、锡激活的磷酸锌锶粉、YVO4:Eu、Y(PV)O4:Eu、(BaSi2O3):Pb、〔(Ca,Zn)3(PO4)2:Tl〕、Sr2P2O7:Eu、MgGa2O4:Mn和Zn2SiO4:Mn中的任意一种或几种混合而成。
所述有机紫外发光材料为二苯乙烯联苯二磺酸钠、2,5-双-(5-叔丁基-2-苯并恶唑基)噻吩、1-对磺酰氨基苯基-3-对氯苯基-2-吡唑啉、苯二甲酰亚胺中的任意一种或几种混合而成。
所述紫外线吸收剂为有机紫外线吸收剂或无机紫外线吸收剂。
所述有机紫外线吸收剂为2-(2’-羟基-3’,5’-二叔丁基苯基)-5-氯代苯并三唑、2-羟基-4-正辛氧基二苯甲酮、(2-羟基-4-甲氧苯基)苯基酮、2-[2-羟基-5-(1,1,3,3-四甲丁基)苯基]苯并三唑、2-(2'-羟基-3',5'-二特戊基苯基)苯骈三唑中的任意一种或几种混合而成。
所述无机紫外线吸收剂为纳米氧化锌、纳米氧化锡、纳米氧化铟锡、纳米氧化锡锑中的任意一种或几种混合而成。
所述步骤1中,所述阵列基板的制作方法具体包括如下步骤:
步骤11、提供第一衬底基板,在所述第一衬底基板上沉积第一金属层,对所述第一金属层进行图案化处理,得到遮光层;
步骤12、在所述遮光层、及第一衬底基板形成缓冲层,在所述缓冲层上形成多晶硅层,采用光刻制程对所述多晶硅层进行图案化处理,得到对应于遮光层上方的第一多晶硅段、及与第一多晶硅段间隔设置的第二多晶硅段;
步骤13、对所述第一多晶硅段的中间区域进行P型轻掺杂,得到第一沟道区,之后对所述第一多晶硅段的两端进行N型重掺杂,得到位于两端的N型重掺杂区;
步骤14、在所述第一多晶硅段、第二多晶硅段、及缓冲层上沉积栅极绝缘层,在所述栅极绝缘层上沉积第二金属层,对所述第二金属层进行图案化处理,得到分别对应于第一多晶硅段与第二多晶硅段上方的第一栅极与第二栅极;
步骤15、对所述第一多晶硅段上位于第一沟道区与N型重掺杂区之间的区域进行N型轻掺杂,得到轻掺杂漏区,之后对所述第二多晶硅段的两端进行P型重掺杂,得到位于两端的P型重掺杂区、及位于两P型重掺杂区之间的第二沟道区;
步骤16、在所述第一栅极、第二栅极、及栅极绝缘层上沉积层间绝缘层,通过光刻制程对所述层间绝缘层与栅极绝缘层进行图案化处理,在所述层间绝缘层与栅极绝缘层上形成对应于N型重掺杂区上方的第一过孔、及对应于P型重掺杂区上方的第二过孔;
步骤17、在所述层间绝缘层上沉积第三金属层,对所述第三金属层进行图案化处理,得到间隔设置的第一源极、第一漏极、第二源极、及第二漏极;所述第一源极、第一漏极分别通过第一过孔与N型重掺杂区相接触,所述第二源极、第二漏极分别通过第二过孔与P型重掺杂区相接触;
步骤18、在所述第一源极、第一漏极、第二源极、第二漏极、及层间绝缘层上涂布含有紫外发光材料和紫外线吸收剂的有机光阻,形成第一平坦层,对所述第一平坦层进行图案化处理,在所述第一平坦层上形成对应于第一漏极上方的第三过孔;
在所述第一平坦层上沉积第一透明导电层,对所述第一透明导电层进行图案化处理,得到公共电极;
步骤19、在所述公共电极、及第一平坦层上形成钝化层,之后对钝化层进行图案化处理,得到位于第三过孔中的第四过孔,且所述第四过孔的孔壁属于钝化层;
在所述钝化层上沉积第二透明导电层,对所述第二透明导电层进行图案化处理,得到像素电极,所述像素电极通过第四过孔与第一漏极相接触。
所述第一金属层、第二金属层、第三金属层的材料为钼、钛、铝、铜中的一种或多种的堆栈组合;所述缓冲层、栅极绝缘层、层间绝缘层为氧化硅层、氮化硅层、或者由氧化硅层与氮化硅层叠加构成的复合层;所述第一透明导电层、第二透明导电层的材料为透明金属氧化物。
所述步骤2中,所述彩膜基板的制作方法具体包括如下步骤:
步骤21、提供第二衬底基板,在所述第二衬底基板上形成黑色矩阵,在所述黑色矩阵、及第二衬底基板上形成彩色光阻层;
步骤22、在彩色光阻层上涂布含有紫外发光材料和紫外线吸收剂的有机光阻,形成第二平坦层,在所述第二平坦层上形成数个光阻间隙物。
本发明的有益效果:本发明提供的一种护眼式液晶显示装置的制作方法,通过在阵列基板的第一平坦层、及彩膜基板的第二平坦层中添加紫外发光材料和紫外线吸收剂,使得紫外线吸收剂吸收背光模组发出的波长在400nm以下的短波蓝光及紫外光,同时吸收的短波蓝光及紫外光激发所述紫外发光材料发出波长为400nm以上的长波蓝色可见光,即,通过第一平坦层与第二平坦层将损害人眼的紫外光及波长在400nm以下的短波蓝光转化为对人眼没有伤害的波长为400nm以上的长波蓝色可见光,既保护人眼,又不会降低液晶显示面板的显示亮度,保证液晶显示装置的背光率和穿透率。
为了能更进一步了解本发明的特征以及技术内容,请参阅以下有关本发明的详细说明与附图,然而附图仅提供参考与说明用,并非用来对本发明加以限制。
附图说明
下面结合附图,通过对本发明的具体实施方式详细描述,将使本发明的技术方案及其它有益效果显而易见。
附图中,
图1为本发明的护眼式液晶显示装置的制作方法的示意流程图;
图2-10为本发明的护眼式液晶显示装置的制作方法的步骤1的示意图;
图11-12为本发明的护眼式液晶显示装置的制作方法的步骤2的示意图;
图13为本发明的护眼式液晶显示装置的制作方法的步骤3的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果,以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1,本发明提供一种护眼式液晶显示装置的制作方法,包括如下步骤:
步骤1、请参阅图2-10,制作一阵列基板100,所述阵列基板100包括第一衬底基板10,位于第一衬底基板10上的遮光层20,位于遮光层20、及基板10上的缓冲层23,位于所述缓冲层23上的第一多晶硅段30与第二多晶硅段40,位于第一多晶硅段30、第二多晶硅段40、及缓冲层23上的栅极绝缘层50,位于所述栅极绝缘层50上的第一栅极51与第二栅极52,位于所述第一栅极51、第二栅极52、及栅极绝缘层50上的层间绝缘层60,位于层间绝缘层60上的第一源极61、第一漏极62、第二源极63、第二漏极64,位于所述第一源极61、第一漏极62、第二源极63、第二漏极64、及层间绝缘层60上的第一平坦层70,位于第一平坦层70上的公共电极81,位于公共电极81、及第一平坦层70上的钝化层90,以及位于钝化层90上的像素电极95;其中,所述第一平坦层70中含有紫外发光材料和紫外线吸收剂;
步骤2、请参阅图11-12,制作一彩膜基板200,所述彩膜基板200包括第二衬底基板210、设于所述第二衬底基板210上的黑色矩阵220、设于所述黑色矩阵220及第二衬底基板210上的彩色光阻层230、设于彩色光阻层230上的第二平坦层240、以及设于所述第二平坦层240上的数个光阻间隙物250;其中,所述第二平坦层240中含有紫外发光材料和紫外线吸收剂;
步骤3、请参阅图13,将所述阵列基板100与彩膜基板200对组,在所述阵列基板100与彩膜基板200之间注入液晶分子,密封后,得到一护眼式液晶显示面板300;提供一背光模组400,将所述护眼式液晶显示面板300与背光模组400组合后,制得一护眼式液晶显示装置;
所述阵列基板100的第一平坦层70、及所述彩膜基板200的第二平坦层240中的紫外线吸收剂可以吸收背光模组400发出的波长在400nm以下的短波蓝光及紫外光,同时吸收的短波蓝光及紫外光可以激发所述紫外发光材料发出波长为400nm以上的长波蓝色可见光,从而既实现护眼功能,又不会降低液晶显示面板的显示亮度,保证液晶显示装置的背光率和穿透率。
具体的,所述紫外发光材料为无机紫外发光材料或有机紫外发光材料。
所述无机紫外发光材料为3Ca3(PO4)2·Ca(F,Cl)2:Sb,Mn、Y2O3:Eu、MgAl11O19:Ce,Tb、BaMg2Al16O27:Eu、锰激活的氟锗酸镁粉、锡激活的磷酸锌锶粉、YVO4:Eu、Y(PV)O4:Eu、(BaSi2O3):Pb、〔(Ca,Zn)3(PO4)2:Tl〕、Sr2P2O7:Eu、MgGa2O4:Mn和Zn2SiO4:Mn中的任意一种或几种混合而成。
所述有机紫外发光材料为二苯乙烯联苯二磺酸钠、2,5-双-(5-叔丁基-2-苯并恶唑基)噻吩、1-对磺酰氨基苯基-3-对氯苯基-2-吡唑啉、苯二甲酰亚胺中的任意一种或几种混合而成。
所述紫外线吸收剂为有机紫外线吸收剂或无机紫外线吸收剂。
所述有机紫外线吸收剂为2-(2’-羟基-3’,5’-二叔丁基苯基)-5-氯代苯并三唑、2-羟基-4-正辛氧基二苯甲酮、(2-羟基-4-甲氧苯基)苯基酮、2-[2-羟基-5-(1,1,3,3-四甲丁基)苯基]苯并三唑、2-(2'-羟基-3',5'-二特戊基苯基)苯骈三唑中的任意一种或几种混合而成。
所述无机紫外线吸收剂为纳米氧化锌、纳米氧化锡、纳米氧化铟锡、纳米氧化锡锑中的任意一种或几种混合而成。
请参阅图2-10,所述步骤1中,所述阵列基板100的制作方法具体包括如下步骤:
步骤11、如图2所示,提供第一衬底基板10,在所述第一衬底基板10上沉积第一金属层,对所述第一金属层进行图案化处理,得到遮光层20。
具体的,所述第一衬底基板10为透明基板,优选为玻璃基板。
步骤12、如图3所示,在所述遮光层20、及第一衬底基板10形成缓冲层23,在所述缓冲层23上形成多晶硅层,采用光刻制程对所述多晶硅层进行图案化处理,得到对应于遮光层20上方的第一多晶硅段30、及与第一多晶硅段30间隔设置的第二多晶硅段40。
通过将第一多晶硅段30设置于遮光层20上方,从而有效防止光线进入第一多晶硅段30的沟道区中,可以起到降低漏电流、提高TFT器件电学性能的作用。
步骤13、如图4所示,对所述第一多晶硅段30的中间区域进行P型轻掺杂,得到第一沟道区32,之后对所述第一多晶硅段30的两端进行N型重掺杂,得到位于两端的N型重掺杂区31。
步骤14、如图5所示,在所述第一多晶硅段30、第二多晶硅段40、及缓冲层23上沉积栅极绝缘层50,在所述栅极绝缘层50上沉积第二金属层,对所述第二金属层进行图案化处理,得到分别对应于第一多晶硅段30与第二多晶硅段40上方的第一栅极51与第二栅极52。
步骤15、如图6所示,对所述第一多晶硅段30上位于第一沟道区32与N型重掺杂区31之间的区域进行N型轻掺杂,得到轻掺杂漏区33,之后对所述第二多晶硅段40的两端进行P型重掺杂,得到位于两端的P型重掺杂区41、及位于两P型重掺杂区41之间的第二沟道区42。
步骤16、如图7所示,在所述第一栅极51、第二栅极52、及栅极绝缘层50上沉积层间绝缘层60,通过光刻制程对所述层间绝缘层60与栅极绝缘层50进行图案化处理,在所述层间绝缘层60与栅极绝缘层50上形成对应于N型重掺杂区31上方的第一过孔67、及对应于P型重掺杂区41上方的第二过孔68。
步骤17、如图8所示,在所述层间绝缘层60上沉积第三金属层,对所述第三金属层进行图案化处理,得到间隔设置的第一源极61、第一漏极62、第二源极63、及第二漏极64;所述第一源极61、第一漏极62分别通过第一过孔67与N型重掺杂区31相接触,所述第二源极63、第二漏极64分别通过第二过孔68与P型重掺杂区41相接触。
步骤18、如图9所示,在所述第一源极61、第一漏极62、第二源极63、第二漏极64、及层间绝缘层60上涂布含有紫外发光材料和紫外线吸收剂的有机光阻,形成第一平坦层70,对所述第一平坦层70进行图案化处理,在所述第一平坦层70上形成对应于第一漏极62上方的第三过孔71;
在所述第一平坦层70上沉积第一透明导电层,对所述第一透明导电层进行图案化处理,得到公共(COM)电极81。
步骤19、如图10所示,在所述公共电极81、及第一平坦层70上形成钝化层90,之后对钝化层90进行图案化处理,得到位于第三过孔71中的第四过孔91,且所述第四过孔91的孔壁属于钝化层90;
在所述钝化层90上沉积第二透明导电层,对所述第二透明导电层进行图案化处理,得到像素电极95,所述像素电极95通过第四过孔91与第一漏极62相接触。
具体的,所述第一金属层、第二金属层、第三金属层的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
具体的,所述缓冲层23、栅极绝缘层50、层间绝缘层60为氧化硅层、氮化硅层、或者由氧化硅层与氮化硅层叠加构成的复合层。
具体的,所述钝化层90的材料为氮化硅或氧化硅。
具体的,所述第一透明导电层、第二透明导电层的材料为透明金属氧化物,所述透明金属氧化物可以为铟锡氧化物、铟锌氧化物、铝锡氧化物、铝锌氧化物、铟锗锌氧化物中的一种或多种。
具体的,所述P型轻掺杂与P型重掺杂制程中掺入的离子可以为硼(B)离子或镓(Ga)离子;所述N型轻掺杂与N型重掺杂制程中掺入的离子可以为磷(P)离子或砷(As)离子。
具体的,所述第一源极61、第一漏极62、第一栅极51与第一多晶硅段30构成NMOS(Negativechannel-Metal-Oxide-Semiconductor,N型金属氧化物半导体)晶体管;所述第二源极63、第二漏极64、第二栅极52与第二多晶硅段40构成PMOS(Positivechannel-Metal-Oxide-Semiconductor,P型金属氧化物半导体)晶体管。
上述阵列基板100的制作方法,通过在第一平坦层70中添加紫外发光材料和紫外线吸收剂,将损害人眼的紫外光及波长在400nm以下的短波蓝光转化为对人眼没有伤害的波长为400nm以上的长波蓝色可见光,既保护人眼,又不会降低液晶显示面板的显示亮度,保证液晶显示装置的背光率和穿透率。
请参阅图11-12,所述步骤2中,所述彩膜基板200的制作方法具体包括如下步骤:
步骤21、如图11所示,提供第二衬底基板210,在所述第二衬底基板210上形成黑色矩阵220,在所述黑色矩阵220、及第二衬底基板210上形成彩色光阻层230。
具体的,所述第二衬底基板210为透明基板,优选为玻璃基板。
所述彩色光阻层230包括数个红色色阻块231、数个绿色色阻块232、及数个蓝色色阻块233。进一步的,所述彩色光阻层20还可以包括数个白色色阻块。所述红色色阻块231、数个绿色色阻块232、数个蓝色色阻块233、及数个白色色阻块的制作顺序不做限定,可根据需要进行选择。
步骤22、如图12所示,在彩色光阻层230上涂布含有紫外发光材料和紫外线吸收剂的有机光阻,形成第二平坦层240,在所述第二平坦层240上形成数个光阻间隙物250。
具体的,所述数个光阻间隙物250包括数个主要光阻间隙物251及数个次要光阻间隙物252。所述主要光阻间隙物251的高度大于所述次要光阻间隙物42的高度。
上述彩膜基板200的制作方法,通过在第二平坦层240中添加紫外发光材料和紫外线吸收剂,将损害人眼的紫外光及波长在400nm以下的短波蓝光转化为对人眼没有伤害的波长为400nm以上的长波蓝色可见光,既保护人眼,又不会降低液晶显示面板的显示亮度,保证液晶显示装置的背光率和穿透率。
综上所述,本发明提供的一种护眼式液晶显示装置的制作方法,通过在阵列基板100的第一平坦层70、及彩膜基板200的第二平坦层240中添加紫外发光材料和紫外线吸收剂,使得紫外线吸收剂吸收背光模组发出的波长在400nm以下的短波蓝光及紫外光,同时吸收的短波蓝光及紫外光激发所述紫外发光材料发出波长为400nm以上的长波蓝色可见光,即,通过第一平坦层70与第二平坦层240将损害人眼的紫外光及波长在400nm以下的短波蓝光转化为对人眼没有伤害的波长为400nm以上的长波蓝色可见光,既保护人眼,又不会降低液晶显示面板的显示亮度,保证液晶显示装置的背光率和穿透率。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明权利要求的保护范围。
Claims (10)
1.一种护眼式液晶显示装置的制作方法,其特征在于,包括如下步骤:
步骤1、制作一阵列基板(100),所述阵列基板(100)包括第一衬底基板(10),位于第一衬底基板(10)上的遮光层(20),位于遮光层(20)、及基板(10)上的缓冲层(23),位于所述缓冲层(23)上的第一多晶硅段(30)与第二多晶硅段(40),位于第一多晶硅段(30)、第二多晶硅段(40)、及缓冲层(23)上的栅极绝缘层(50),位于所述栅极绝缘层(50)上的第一栅极(51)与第二栅极(52),位于所述第一栅极(51)、第二栅极(52)、及栅极绝缘层(50)上的层间绝缘层(60),位于层间绝缘层(60)上的第一源极(61)、第一漏极(62)、第二源极(63)、第二漏极(64),位于所述第一源极(61)、第一漏极(62)、第二源极(63)、第二漏极(64)、及层间绝缘层(60)上的第一平坦层(70),位于第一平坦层(70)上的公共电极(81),位于公共电极(81)、及第一平坦层(70)上的钝化层(90),以及位于钝化层(90)上的像素电极(95);其中,所述第一平坦层(70)中含有紫外发光材料和紫外线吸收剂;
步骤2、制作一彩膜基板(200),所述彩膜基板(200)包括第二衬底基板(210)、设于所述第二衬底基板(210)上的黑色矩阵(220)、设于所述黑色矩阵(220)及第二衬底基板(210)上的彩色光阻层(230)、设于彩色光阻层(230)上的第二平坦层(240)、以及设于所述第二平坦层(240)上的数个光阻间隙物(250);其中,所述第二平坦层(240)中含有紫外发光材料和紫外线吸收剂;
步骤3、将所述阵列基板(100)与彩膜基板(200)对组,在所述阵列基板(100)与彩膜基板(200)之间注入液晶分子,密封后,得到一护眼式液晶显示面板;提供一背光模组(400),将所述护眼式液晶显示面板(300)与背光模组(400)组合后,制得一护眼式液晶显示装置;
所述阵列基板(100)的第一平坦层(70)、及所述彩膜基板(200)的第二平坦层(240)中的紫外线吸收剂可以吸收背光模组(400)发出的波长在400nm以下的短波蓝光及紫外光,同时吸收的短波蓝光及紫外光可以激发所述紫外发光材料发出波长为400nm以上的长波蓝色可见光,从而既实现护眼功能,又不会降低液晶显示面板的显示亮度。
2.如权利要求1所述的护眼式液晶显示装置的制作方法,其特征在于,所述紫外发光材料为无机紫外发光材料或有机紫外发光材料。
3.如权利要求2所述的护眼式液晶显示装置的制作方法,其特征在于,所述无机紫外发光材料为3Ca3(PO4)2·Ca(F,Cl)2:Sb,Mn、Y2O3:Eu、MgAl11O19:Ce,Tb、BaMg2Al16O27:Eu、锰激活的氟锗酸镁粉、锡激活的磷酸锌锶粉、YVO4:Eu、Y(PV)O4:Eu、(BaSi2O3):Pb、〔(Ca,Zn)3(PO4)2:Tl〕、Sr2P2O7:Eu、MgGa2O4:Mn和Zn2SiO4:Mn中的任意一种或几种混合而成。
4.如权利要求2所述的护眼式液晶显示装置的制作方法,其特征在于,所述有机紫外发光材料为二苯乙烯联苯二磺酸钠、2,5-双-(5-叔丁基-2-苯并恶唑基)噻吩、1-对磺酰氨基苯基-3-对氯苯基-2-吡唑啉、苯二甲酰亚胺中的任意一种或几种混合而成。
5.如权利要求1所述的护眼式液晶显示装置的制作方法,其特征在于,所述紫外线吸收剂为有机紫外线吸收剂或无机紫外线吸收剂。
6.如权利要求5所述的护眼式液晶显示装置的制作方法,其特征在于,所述有机紫外线吸收剂为2-(2’-羟基-3’,5’-二叔丁基苯基)-5-氯代苯并三唑、2-羟基-4-正辛氧基二苯甲酮、(2-羟基-4-甲氧苯基)苯基酮、2-[2-羟基-5-(1,1,3,3-四甲丁基)苯基]苯并三唑、2-(2'-羟基-3',5'-二特戊基苯基)苯骈三唑中的任意一种或几种混合而成。
7.如权利要求5所述的护眼式液晶显示装置的制作方法,其特征在于,所述无机紫外线吸收剂为纳米氧化锌、纳米氧化锡、纳米氧化铟锡、纳米氧化锡锑中的任意一种或几种混合而成。
8.如权利要求1所述的护眼式液晶显示装置的制作方法,其特征在于,所述步骤1中,所述阵列基板(100)的制作方法具体包括如下步骤:
步骤11、提供第一衬底基板(10),在所述第一衬底基板(10)上沉积第一金属层,对所述第一金属层进行图案化处理,得到遮光层(20);
步骤12、在所述遮光层(20)、及第一衬底基板(10)形成缓冲层(23),在所述缓冲层(23)上形成多晶硅层,采用光刻制程对所述多晶硅层进行图案化处理,得到对应于遮光层(20)上方的第一多晶硅段(30)、及与第一多晶硅段(30)间隔设置的第二多晶硅段(40);
步骤13、对所述第一多晶硅段(30)的中间区域进行P型轻掺杂,得到第一沟道区(32),之后对所述第一多晶硅段(30)的两端进行N型重掺杂,得到位于两端的N型重掺杂区(31);
步骤14、在所述第一多晶硅段(30)、第二多晶硅段(40)、及缓冲层(23)上沉积栅极绝缘层(50),在所述栅极绝缘层(50)上沉积第二金属层,对所述第二金属层进行图案化处理,得到分别对应于第一多晶硅段(30)与第二多晶硅段(40)上方的第一栅极(51)与第二栅极(52);
步骤15、对所述第一多晶硅段(30)上位于第一沟道区(32)与N型重掺杂区(31)之间的区域进行N型轻掺杂,得到轻掺杂漏区(33),之后对所述第二多晶硅段(40)的两端进行P型重掺杂,得到位于两端的P型重掺杂区(41)、及位于两P型重掺杂区(41)之间的第二沟道区(42);
步骤16、在所述第一栅极(51)、第二栅极(52)、及栅极绝缘层(50)上沉积层间绝缘层(60),通过光刻制程对所述层间绝缘层(60)与栅极绝缘层(50)进行图案化处理,在所述层间绝缘层(60)与栅极绝缘层(50)上形成对应于N型重掺杂区(31)上方的第一过孔(67)、及对应于P型重掺杂区(41)上方的第二过孔(68);
步骤17、在所述层间绝缘层(60)上沉积第三金属层,对所述第三金属层进行图案化处理,得到间隔设置的第一源极(61)、第一漏极(62)、第二源极(63)、及第二漏极(64);所述第一源极(61)、第一漏极(62)分别通过第一过孔(67)与N型重掺杂区(31)相接触,所述第二源极(63)、第二漏极(64)分别通过第二过孔(68)与P型重掺杂区(41)相接触;
步骤18、在所述第一源极(61)、第一漏极(62)、第二源极(63)、第二漏极(64)、及层间绝缘层(60)上涂布含有紫外发光材料和紫外线吸收剂的有机光阻,形成第一平坦层(70),对所述第一平坦层(70)进行图案化处理,在所述第一平坦层(70)上形成对应于第一漏极(62)上方的第三过孔(71);
在所述第一平坦层(70)上沉积第一透明导电层,对所述第一透明导电层进行图案化处理,得到公共电极(81);
步骤19、在所述公共电极(81)、及第一平坦层(70)上形成钝化层(90),之后对钝化层(90)进行图案化处理,得到位于第三过孔(71)中的第四过孔(91),且所述第四过孔(91)的孔壁属于钝化层(90);
在所述钝化层(90)上沉积第二透明导电层,对所述第二透明导电层进行图案化处理,得到像素电极(95),所述像素电极(95)通过第四过孔(91)与第一漏极(62)相接触。
9.如权利要求8所述的护眼式液晶显示装置的制作方法,其特征在于,所述第一金属层、第二金属层、第三金属层的材料为钼、钛、铝、铜中的一种或多种的堆栈组合;所述缓冲层(23)、栅极绝缘层(50)、层间绝缘层(60)为氧化硅层、氮化硅层、或者由氧化硅层与氮化硅层叠加构成的复合层;所述第一透明导电层、第二透明导电层的材料为透明金属氧化物。
10.如权利要求1所述的护眼式液晶显示装置的制作方法,其特征在于,所述步骤2中,所述彩膜基板(200)的制作方法具体包括如下步骤:
步骤21、提供第二衬底基板(210),在所述第二衬底基板(210)上形成黑色矩阵(220),在所述黑色矩阵(220)、及第二衬底基板(210)上形成彩色光阻层(230);
步骤22、在彩色光阻层(230)上涂布含有紫外发光材料和紫外线吸收剂的有机光阻,形成第二平坦层(240),在所述第二平坦层(240)上形成数个光阻间隙物(250)。
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CN113451364A (zh) * | 2020-03-27 | 2021-09-28 | 咸阳彩虹光电科技有限公司 | 一种oled显示结构、显示装置 |
WO2023123546A1 (zh) * | 2021-12-30 | 2023-07-06 | 武汉华星光电半导体显示技术有限公司 | 显示面板及移动终端 |
CN114690492A (zh) * | 2022-03-16 | 2022-07-01 | 武汉华星光电技术有限公司 | 显示面板及显示终端 |
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