CN105388699B - 评价用掩模、评价方法、曝光装置以及物品的制造方法 - Google Patents
评价用掩模、评价方法、曝光装置以及物品的制造方法 Download PDFInfo
- Publication number
- CN105388699B CN105388699B CN201510522421.5A CN201510522421A CN105388699B CN 105388699 B CN105388699 B CN 105388699B CN 201510522421 A CN201510522421 A CN 201510522421A CN 105388699 B CN105388699 B CN 105388699B
- Authority
- CN
- China
- Prior art keywords
- pattern
- evaluation
- mask
- exposure device
- performance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014-173007 | 2014-08-27 | ||
JP2014173007A JP6415186B2 (ja) | 2014-08-27 | 2014-08-27 | 評価用マスク、評価方法、露光装置及び物品の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105388699A CN105388699A (zh) | 2016-03-09 |
CN105388699B true CN105388699B (zh) | 2019-11-01 |
Family
ID=55421123
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510522421.5A Active CN105388699B (zh) | 2014-08-27 | 2015-08-24 | 评价用掩模、评价方法、曝光装置以及物品的制造方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6415186B2 (ko) |
KR (1) | KR101952990B1 (ko) |
CN (1) | CN105388699B (ko) |
TW (1) | TWI597562B (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117406546B (zh) * | 2023-12-14 | 2024-04-12 | 合肥晶合集成电路股份有限公司 | 一种掩模版及其图形修正方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002015992A (ja) * | 2000-04-25 | 2002-01-18 | Nikon Corp | リソグラフィ・プロセス及びリソグラフィ・システムの評価方法、基板処理装置の調整方法、リソグラフィ・システム、露光方法及び装置、並びに感光材料の状態の測定方法 |
JP2003007591A (ja) * | 2001-06-21 | 2003-01-10 | Nikon Corp | 荷電粒子線光学系の収差評価方法、荷電粒子線装置調整方法、荷電粒子線露光方法、非点収差評価方法及び評価用パターン |
JP2003142367A (ja) * | 2001-10-31 | 2003-05-16 | Sony Corp | 評価用マスク及びマスク評価方法 |
JP2003318083A (ja) * | 2002-04-22 | 2003-11-07 | Nikon Corp | 光学特性計測方法、光学系の調整方法、露光方法及び装置、並びにデバイス製造方法 |
JP4051240B2 (ja) * | 2002-07-31 | 2008-02-20 | 富士通株式会社 | 試験用フォトマスク、フレア評価方法、及びフレア補正方法 |
JP4005870B2 (ja) * | 2002-08-02 | 2007-11-14 | 株式会社東芝 | マスク、マスクの作成方法、および半導体装置の製造方法 |
JP5164409B2 (ja) * | 2006-09-28 | 2013-03-21 | 富士フイルム株式会社 | 光硬化性組成物、カラーフィルター及びその製造方法、並びに、固体撮像素子 |
DE102008019341B4 (de) * | 2008-04-15 | 2020-09-24 | Carl Zeiss Smt Gmbh | Verfahren zur Analyse von Masken für die Photolithographie |
JP2012047937A (ja) * | 2010-08-26 | 2012-03-08 | Nsk Technology Co Ltd | 露光評価用マスクおよび露光評価方法 |
JP2012078552A (ja) * | 2010-10-01 | 2012-04-19 | Toppan Printing Co Ltd | フォトマスク作製方法 |
JP5497693B2 (ja) * | 2011-06-10 | 2014-05-21 | Hoya株式会社 | フォトマスク基板、フォトマスク基板の製造方法、フォトマスクの製造方法、及びパターン転写方法 |
-
2014
- 2014-08-27 JP JP2014173007A patent/JP6415186B2/ja active Active
-
2015
- 2015-06-22 TW TW104119998A patent/TWI597562B/zh active
- 2015-08-19 KR KR1020150116433A patent/KR101952990B1/ko active IP Right Grant
- 2015-08-24 CN CN201510522421.5A patent/CN105388699B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
JP6415186B2 (ja) | 2018-10-31 |
TWI597562B (zh) | 2017-09-01 |
CN105388699A (zh) | 2016-03-09 |
TW201608330A (zh) | 2016-03-01 |
KR101952990B1 (ko) | 2019-02-27 |
KR20160025457A (ko) | 2016-03-08 |
JP2016048299A (ja) | 2016-04-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100832660B1 (ko) | 포토마스크의 평가 방법, 평가 장치, 및 반도체 장치의제조 방법 | |
KR100650365B1 (ko) | 그레이톤 마스크의 결함 수정 방법 | |
JP2013080816A (ja) | 半導体装置の製造方法及び半導体装置 | |
KR101862015B1 (ko) | 노광 장치에서 노광 에너지 측정 방법 | |
CN105388699B (zh) | 评价用掩模、评价方法、曝光装置以及物品的制造方法 | |
US7393613B2 (en) | Set of at least two masks for the projection of structure patterns | |
KR102126232B1 (ko) | 평가 방법, 노광 방법, 및 물품의 제조 방법 | |
KR101376425B1 (ko) | 포토마스크 및 그의 제조 방법 | |
US6544695B2 (en) | Photomask set for photolithographic operation | |
JP2010199347A (ja) | 露光方法及びデバイス製造方法 | |
JP2003209048A (ja) | パターン形成方法 | |
US8411255B2 (en) | Pattern forming method | |
JP5311326B2 (ja) | フォトマスク、パターンの形成方法および電子デバイスの製造方法 | |
JP4118137B2 (ja) | 露光用マスク、半導体装置の製造方法及び欠陥修正要否判定装置 | |
JP2004006783A (ja) | 投影光学系、露光装置、露光方法及びマイクロデバイスの製造方法 | |
JP2001223155A (ja) | フォトリソグラフィ方法 | |
KR100618906B1 (ko) | 퓨필그램 모니터링용 마스크, 이의 제조방법, 및 이를이용한 초점 모니터링 방법 | |
JP6094630B2 (ja) | 半導体装置 | |
JP2004153294A5 (ko) | ||
JP2002260997A (ja) | アライメントマーク | |
JP2005266417A (ja) | 照度ムラ補正フィルタ、照度ムラ補正フィルタの設計方法、照明光学装置、露光装置及び露光方法 | |
KR20020037480A (ko) | 반도체 노광에 사용되는 투영렌즈의 코마수차 측정용마스크 및 그에 따른 코마 수차측정방법 | |
KR20010095798A (ko) | 스테퍼의 노광방법 | |
KR20090069567A (ko) | 반도체소자의 패턴 및 그것을 이용한 패턴 보정방법 | |
KR20100073581A (ko) | 반도체 노광장비 렌즈의 비점수차 측정용 패턴 및 반도체 노광장비 렌즈의 비점수차 측정 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |