CN105388699B - 评价用掩模、评价方法、曝光装置以及物品的制造方法 - Google Patents

评价用掩模、评价方法、曝光装置以及物品的制造方法 Download PDF

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Publication number
CN105388699B
CN105388699B CN201510522421.5A CN201510522421A CN105388699B CN 105388699 B CN105388699 B CN 105388699B CN 201510522421 A CN201510522421 A CN 201510522421A CN 105388699 B CN105388699 B CN 105388699B
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Prior art keywords
pattern
evaluation
mask
exposure device
performance
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Chinese (zh)
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CN105388699A (zh
Inventor
安藤美和子
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Kato Corp
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Kato Corp
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
CN201510522421.5A 2014-08-27 2015-08-24 评价用掩模、评价方法、曝光装置以及物品的制造方法 Active CN105388699B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-173007 2014-08-27
JP2014173007A JP6415186B2 (ja) 2014-08-27 2014-08-27 評価用マスク、評価方法、露光装置及び物品の製造方法

Publications (2)

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CN105388699A CN105388699A (zh) 2016-03-09
CN105388699B true CN105388699B (zh) 2019-11-01

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CN201510522421.5A Active CN105388699B (zh) 2014-08-27 2015-08-24 评价用掩模、评价方法、曝光装置以及物品的制造方法

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JP (1) JP6415186B2 (ko)
KR (1) KR101952990B1 (ko)
CN (1) CN105388699B (ko)
TW (1) TWI597562B (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117406546B (zh) * 2023-12-14 2024-04-12 合肥晶合集成电路股份有限公司 一种掩模版及其图形修正方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002015992A (ja) * 2000-04-25 2002-01-18 Nikon Corp リソグラフィ・プロセス及びリソグラフィ・システムの評価方法、基板処理装置の調整方法、リソグラフィ・システム、露光方法及び装置、並びに感光材料の状態の測定方法
JP2003007591A (ja) * 2001-06-21 2003-01-10 Nikon Corp 荷電粒子線光学系の収差評価方法、荷電粒子線装置調整方法、荷電粒子線露光方法、非点収差評価方法及び評価用パターン
JP2003142367A (ja) * 2001-10-31 2003-05-16 Sony Corp 評価用マスク及びマスク評価方法
JP2003318083A (ja) * 2002-04-22 2003-11-07 Nikon Corp 光学特性計測方法、光学系の調整方法、露光方法及び装置、並びにデバイス製造方法
JP4051240B2 (ja) * 2002-07-31 2008-02-20 富士通株式会社 試験用フォトマスク、フレア評価方法、及びフレア補正方法
JP4005870B2 (ja) * 2002-08-02 2007-11-14 株式会社東芝 マスク、マスクの作成方法、および半導体装置の製造方法
JP5164409B2 (ja) * 2006-09-28 2013-03-21 富士フイルム株式会社 光硬化性組成物、カラーフィルター及びその製造方法、並びに、固体撮像素子
DE102008019341B4 (de) * 2008-04-15 2020-09-24 Carl Zeiss Smt Gmbh Verfahren zur Analyse von Masken für die Photolithographie
JP2012047937A (ja) * 2010-08-26 2012-03-08 Nsk Technology Co Ltd 露光評価用マスクおよび露光評価方法
JP2012078552A (ja) * 2010-10-01 2012-04-19 Toppan Printing Co Ltd フォトマスク作製方法
JP5497693B2 (ja) * 2011-06-10 2014-05-21 Hoya株式会社 フォトマスク基板、フォトマスク基板の製造方法、フォトマスクの製造方法、及びパターン転写方法

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Publication number Publication date
JP6415186B2 (ja) 2018-10-31
TWI597562B (zh) 2017-09-01
CN105388699A (zh) 2016-03-09
TW201608330A (zh) 2016-03-01
KR101952990B1 (ko) 2019-02-27
KR20160025457A (ko) 2016-03-08
JP2016048299A (ja) 2016-04-07

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