CN105369250A - 一种基于纳米二氧化硅的电路板用蚀刻液 - Google Patents
一种基于纳米二氧化硅的电路板用蚀刻液 Download PDFInfo
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- CN105369250A CN105369250A CN201510952041.5A CN201510952041A CN105369250A CN 105369250 A CN105369250 A CN 105369250A CN 201510952041 A CN201510952041 A CN 201510952041A CN 105369250 A CN105369250 A CN 105369250A
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- nano silicon
- hydrochloric acid
- silicon dioxide
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- Granted
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- 238000005530 etching Methods 0.000 title claims abstract description 31
- 239000005543 nano-size silicon particle Substances 0.000 title claims abstract description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 4
- 239000007788 liquid Substances 0.000 title abstract 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 46
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000012153 distilled water Substances 0.000 claims abstract description 15
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 39
- 239000000203 mixture Substances 0.000 claims description 15
- 235000006408 oxalic acid Nutrition 0.000 claims description 13
- 239000004254 Ammonium phosphate Substances 0.000 claims description 8
- 229910000148 ammonium phosphate Inorganic materials 0.000 claims description 8
- 235000019289 ammonium phosphates Nutrition 0.000 claims description 8
- 239000013530 defoamer Substances 0.000 claims description 8
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 abstract description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 abstract 1
- 239000002518 antifoaming agent Substances 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 abstract 1
- 230000035515 penetration Effects 0.000 abstract 1
- 239000011241 protective layer Substances 0.000 abstract 1
- 239000003381 stabilizer Substances 0.000 abstract 1
- 239000004094 surface-active agent Substances 0.000 abstract 1
- 238000003756 stirring Methods 0.000 description 30
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 15
- 230000002378 acidificating effect Effects 0.000 description 15
- 239000003729 cation exchange resin Substances 0.000 description 15
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000002085 irritant Substances 0.000 description 1
- 231100000021 irritant Toxicity 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000013441 quality evaluation Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Paints Or Removers (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510952041.5A CN105369250B (zh) | 2015-12-16 | 2015-12-16 | 一种基于纳米二氧化硅的电路板用蚀刻液 |
Applications Claiming Priority (1)
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CN201510952041.5A CN105369250B (zh) | 2015-12-16 | 2015-12-16 | 一种基于纳米二氧化硅的电路板用蚀刻液 |
Publications (2)
Publication Number | Publication Date |
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CN105369250A true CN105369250A (zh) | 2016-03-02 |
CN105369250B CN105369250B (zh) | 2017-12-08 |
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CN201510952041.5A Expired - Fee Related CN105369250B (zh) | 2015-12-16 | 2015-12-16 | 一种基于纳米二氧化硅的电路板用蚀刻液 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107935400A (zh) * | 2017-11-24 | 2018-04-20 | 无锡南理工新能源电动车科技发展有限公司 | 一种基于纳米二氧化硅的显示屏玻璃基板用蚀刻液 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61124589A (ja) * | 1984-11-17 | 1986-06-12 | Daikin Ind Ltd | エツチング剤組成物 |
CN1796482A (zh) * | 2004-10-19 | 2006-07-05 | 不二见株式会社 | 用于选择性抛光氮化硅层的组合物以及使用该组合物的抛光方法 |
CN102277573A (zh) * | 2011-08-19 | 2011-12-14 | 绵阳艾萨斯电子材料有限公司 | 液晶显示屏用铬蚀刻液及其制备方法 |
CN102640275A (zh) * | 2009-11-30 | 2012-08-15 | 巴斯夫欧洲公司 | 从衬底去除本体材料层的方法以及适于该方法的化学机械抛光剂 |
CN103740280A (zh) * | 2013-12-31 | 2014-04-23 | 深圳市力合材料有限公司 | 一种适用于硅晶片边抛光的抛光组合物及其制备方法 |
CN104479559A (zh) * | 2014-12-10 | 2015-04-01 | 深圳市力合材料有限公司 | 一种适用于晶片边缘抛光的组合物及其制备方法 |
-
2015
- 2015-12-16 CN CN201510952041.5A patent/CN105369250B/zh not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61124589A (ja) * | 1984-11-17 | 1986-06-12 | Daikin Ind Ltd | エツチング剤組成物 |
CN1796482A (zh) * | 2004-10-19 | 2006-07-05 | 不二见株式会社 | 用于选择性抛光氮化硅层的组合物以及使用该组合物的抛光方法 |
CN102640275A (zh) * | 2009-11-30 | 2012-08-15 | 巴斯夫欧洲公司 | 从衬底去除本体材料层的方法以及适于该方法的化学机械抛光剂 |
CN102277573A (zh) * | 2011-08-19 | 2011-12-14 | 绵阳艾萨斯电子材料有限公司 | 液晶显示屏用铬蚀刻液及其制备方法 |
CN103740280A (zh) * | 2013-12-31 | 2014-04-23 | 深圳市力合材料有限公司 | 一种适用于硅晶片边抛光的抛光组合物及其制备方法 |
CN104479559A (zh) * | 2014-12-10 | 2015-04-01 | 深圳市力合材料有限公司 | 一种适用于晶片边缘抛光的组合物及其制备方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107935400A (zh) * | 2017-11-24 | 2018-04-20 | 无锡南理工新能源电动车科技发展有限公司 | 一种基于纳米二氧化硅的显示屏玻璃基板用蚀刻液 |
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CN105369250B (zh) | 2017-12-08 |
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Effective date of registration: 20171107 Address after: 400056, Chongqing District, Banan City, South Village Red Star Village 12 clubs Applicant after: Chongqing master Technology Co., Ltd. Address before: 214000 Jiangsu province Wuxi chonganou Liberation Road 918-12B9 Applicant before: WUXI JIJIN ENVIRONMENTAL PROTECTION TECHNOLOGY CO., LTD. |
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Effective date of registration: 20180117 Address after: Chongqing District of Banan city bridge 401344 Solitaire Town Street No. 11 6-8 Patentee after: Liu Mengxiang Address before: 400056, Chongqing District, Banan City, South Village Red Star Village 12 clubs Patentee before: Chongqing master Technology Co., Ltd. |
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Effective date of registration: 20180625 Address after: 518104 7, floor 701, B building, Fuxin mansion, 58 industrial area, Post Pavilion community, Baoan District manhole street, Shenzhen, Guangdong, 58 Patentee after: Shenzhen City Dongsheng new electronic materials Co. Ltd. Address before: 401344 Jinqiao street, Jinqiao street, long town, Banan District, Chongqing City, 6-8, 6-8 Patentee before: Liu Mengxiang |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171208 Termination date: 20191216 |