CN105339512B - 制造具有大表面积的低氧阀金属烧结体的方法 - Google Patents
制造具有大表面积的低氧阀金属烧结体的方法 Download PDFInfo
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- CN105339512B CN105339512B CN201480020641.1A CN201480020641A CN105339512B CN 105339512 B CN105339512 B CN 105339512B CN 201480020641 A CN201480020641 A CN 201480020641A CN 105339512 B CN105339512 B CN 105339512B
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- sintered body
- valve metal
- metal powder
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- 238000000034 method Methods 0.000 title claims abstract description 119
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 118
- 239000002184 metal Substances 0.000 title claims abstract description 118
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 206010021143 Hypoxia Diseases 0.000 title description 3
- 208000018875 hypoxemia Diseases 0.000 title description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 72
- 239000001301 oxygen Substances 0.000 claims abstract description 72
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 72
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 32
- 239000000843 powder Substances 0.000 claims description 98
- 238000005245 sintering Methods 0.000 claims description 31
- 239000003638 chemical reducing agent Substances 0.000 claims description 30
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 28
- 239000003990 capacitor Substances 0.000 claims description 24
- 229910052758 niobium Inorganic materials 0.000 claims description 20
- 239000010955 niobium Substances 0.000 claims description 20
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 19
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 239000000126 substance Substances 0.000 claims description 17
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 16
- 238000003825 pressing Methods 0.000 claims description 16
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 15
- 239000003795 chemical substances by application Substances 0.000 claims description 15
- 229910052749 magnesium Inorganic materials 0.000 claims description 14
- 239000011777 magnesium Substances 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 14
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 12
- 229910052698 phosphorus Inorganic materials 0.000 claims description 12
- 239000011574 phosphorus Substances 0.000 claims description 12
- 150000007522 mineralic acids Chemical class 0.000 claims description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 10
- 229910052785 arsenic Inorganic materials 0.000 claims description 10
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000005864 Sulphur Substances 0.000 claims description 9
- 239000011244 liquid electrolyte Substances 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 6
- 230000000994 depressogenic effect Effects 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 4
- 235000021355 Stearic acid Nutrition 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 239000011469 building brick Substances 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 239000011575 calcium Substances 0.000 claims description 4
- 239000003112 inhibitor Substances 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 claims description 4
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 claims description 4
- 239000008117 stearic acid Substances 0.000 claims description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical group [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 235000007164 Oryza sativa Nutrition 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 235000009566 rice Nutrition 0.000 claims description 3
- DSSYKIVIOFKYAU-XCBNKYQSSA-N (R)-camphor Chemical compound C1C[C@@]2(C)C(=O)C[C@@H]1C2(C)C DSSYKIVIOFKYAU-XCBNKYQSSA-N 0.000 claims description 2
- 241000723346 Cinnamomum camphora Species 0.000 claims description 2
- 239000002202 Polyethylene glycol Substances 0.000 claims description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 2
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 2
- 229960000846 camphor Drugs 0.000 claims description 2
- 229930008380 camphor Natural products 0.000 claims description 2
- 229920001223 polyethylene glycol Polymers 0.000 claims description 2
- 241000209094 Oryza Species 0.000 claims 2
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 claims 1
- 229920002125 Sokalan® Polymers 0.000 claims 1
- 238000005121 nitriding Methods 0.000 claims 1
- 239000004584 polyacrylic acid Substances 0.000 claims 1
- 230000008569 process Effects 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 12
- 238000005406 washing Methods 0.000 description 11
- 239000000203 mixture Substances 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical group [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000003792 electrolyte Substances 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 239000011164 primary particle Substances 0.000 description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 229910052790 beryllium Inorganic materials 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000010295 mobile communication Methods 0.000 description 3
- 229940110728 nitrogen / oxygen Drugs 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 238000010561 standard procedure Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 238000005904 alkaline hydrolysis reaction Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- -1 i.e. Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- 229910000952 Be alloy Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 238000013386 optimize process Methods 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 230000010181 polygamy Effects 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 230000010512 thermal transition Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/1003—Use of special medium during sintering, e.g. sintering aid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/24—After-treatment of workpieces or articles
- B22F3/26—Impregnating
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/045—Alloys based on refractory metals
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
- H01G9/0525—Powder therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/1003—Use of special medium during sintering, e.g. sintering aid
- B22F2003/1014—Getter
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2304/00—Physical aspects of the powder
- B22F2304/05—Submicron size particles
- B22F2304/056—Particle size above 100 nm up to 300 nm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Composite Materials (AREA)
- Powder Metallurgy (AREA)
Abstract
Description
实施例 | 温度/℃ | 时间/分钟 |
对比例1* | 950 | 15 |
对比例2* | 1050 | 15 |
对比例3* | 1160 | 10 |
对比例4* | 1120 | 15 |
实施例1 | 950 | 15 |
实施例2 | 1000 | 15 |
实施例3 | 1050 | 15 |
实施例4 | 1050 | 30 |
实施例5 | 950 | 15 |
实施例6 | 1000 | 15 |
实施例7 | 950 | 15 |
实施例9 | 950 | 15 |
WPS | |
实施例7 | 2.9 |
实施例8 | 16.5 |
实施例9 | 13.8 |
实施例10 | 18.6 |
Claims (63)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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DE201310206603 DE102013206603A1 (de) | 2013-04-12 | 2013-04-12 | Verfahren zur Herstellung von sauerstoffarmen Ventilmetallsinterkörpern mit hoher Oberfläche |
DE102013206603.1 | 2013-04-12 | ||
PCT/EP2014/057244 WO2014167045A2 (de) | 2013-04-12 | 2014-04-10 | Verfahren zur herstellung von sauerstoffarmen ventilmetallsinterkörpern mit hoher oberfläche |
Publications (2)
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CN105339512A CN105339512A (zh) | 2016-02-17 |
CN105339512B true CN105339512B (zh) | 2018-06-22 |
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US (2) | US20160064150A1 (zh) |
EP (1) | EP2984194B1 (zh) |
JP (1) | JP6469650B2 (zh) |
KR (1) | KR102317632B1 (zh) |
CN (1) | CN105339512B (zh) |
DE (1) | DE102013206603A1 (zh) |
HK (1) | HK1218434A1 (zh) |
IL (1) | IL240978B (zh) |
MX (2) | MX2015014156A (zh) |
PH (1) | PH12015502340B1 (zh) |
RU (1) | RU2678220C2 (zh) |
TW (1) | TWI630044B (zh) |
WO (1) | WO2014167045A2 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10290430B2 (en) * | 2014-11-24 | 2019-05-14 | Avx Corporation | Wet Electrolytic Capacitor for an Implantable Medical Device |
CN106270482B (zh) * | 2016-08-11 | 2019-01-04 | 中国振华(集团)新云电子元器件有限责任公司 | 钽粉性能改善方法以及该钽粉和该钽粉制备的钽电容器阳极块 |
DE102016011098A1 (de) | 2016-09-15 | 2018-03-15 | H.C. Starck Tantalum and Niobium GmbH | Verfahren zur Herstellung von elektronischen Bauteilen mittels 3D-Druck |
JP6908503B2 (ja) * | 2017-11-17 | 2021-07-28 | 株式会社トーキン | 電解コンデンサ |
KR102389784B1 (ko) * | 2018-03-05 | 2022-04-22 | 글로벌 어드밴스드 메탈스 유에스에이, 아이엔씨. | 구형 분말을 함유하는 애노드 및 커패시터 |
US20190287730A1 (en) * | 2018-03-15 | 2019-09-19 | Kemet Electronics Corporation | Method to Reduce Anode Lead Wire Embrittlement in Capacitors |
EP3959026A1 (en) * | 2019-04-29 | 2022-03-02 | Global Advanced Metals USA, Inc. | A ti-zr alloy powder and anode containing the same |
US12119186B2 (en) | 2020-04-03 | 2024-10-15 | Greatbatch Ltd. | Electrolytic capacitor having an anode formed from a tantalum powder with a relatively low specific charge |
CN113077989B (zh) * | 2021-03-31 | 2023-05-12 | 中国振华(集团)新云电子元器件有限责任公司(国营第四三二六厂) | 一种低氧含量固体电解质钽电容器阳极钽块的制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6340536B1 (en) * | 1999-02-05 | 2002-01-22 | Commissariat A L'energie Atomique | Zirconium and niobium alloy comprising erbium, preparation method and component containing said alloy |
CN1591721A (zh) * | 2003-08-29 | 2005-03-09 | Nec东金株式会社 | 阀金属粉末和使用该阀金属粉末的固体电解电容器 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3130392C2 (de) | 1981-07-31 | 1985-10-17 | Hermann C. Starck Berlin, 1000 Berlin | Verfahren zur Herstellung reiner agglomerierter Ventilmetallpulver für Elektrolytkondensatoren, deren Verwendung und Verfahren zur Herstellung von Sinteranoden |
DE3309891A1 (de) * | 1983-03-18 | 1984-10-31 | Hermann C. Starck Berlin, 1000 Berlin | Verfahren zur herstellung von ventilmetallanoden fuer elektrolytkondensatoren |
US4722756A (en) | 1987-02-27 | 1988-02-02 | Cabot Corp | Method for deoxidizing tantalum material |
JPH1012474A (ja) * | 1996-06-21 | 1998-01-16 | Tokin Corp | 希土類永久磁石の製造方法及び希土類永久磁石 |
JP2004500480A (ja) * | 1999-03-19 | 2004-01-08 | キャボット コーポレイション | 粉砕によるニオビウムおよびその他の金属粉末の製造 |
ATE312406T1 (de) * | 1999-10-01 | 2005-12-15 | Showa Denko Kk | Kondensator-pulver-mischung, daraus hergestellter sinterkörper und aus dem sinterkörper hergestellter kondensator |
RU2267182C2 (ru) * | 2000-08-10 | 2005-12-27 | Шова Дэнко К.К. | Ниобиевый порошок, спеченный ниобиевый материал и конденсатор, выполненный с использованием спеченного материала |
US6447570B1 (en) | 2000-11-30 | 2002-09-10 | Vishay Sprague, Inc. | Sintered Tantalum and Niobium capacitor pellets doped with Nitrogen, and method of making the same |
JP2003013115A (ja) * | 2001-06-28 | 2003-01-15 | Sumitomo Metal Mining Co Ltd | ニオブ及び/又はタンタル粉末の製造方法 |
JP2003089801A (ja) * | 2001-09-17 | 2003-03-28 | Sumitomo Metal Mining Co Ltd | ニオブ及び/またはタンタル粉の製造方法 |
EP1434243B1 (en) | 2001-10-02 | 2010-01-27 | Showa Denko K.K. | Niobium powder, sintered compact thereof, chemically modified product thereof and capacitor using them |
EP1387246A1 (en) * | 2002-07-30 | 2004-02-04 | Motorola, Inc. | User interface and method for displaying information on a plurality of displays |
US7485256B2 (en) * | 2003-04-25 | 2009-02-03 | Cabot Corporation | Method of forming sintered valve metal material |
US7481864B2 (en) * | 2004-01-14 | 2009-01-27 | Cabot Corporation | Conversion of Ta2O5 to Ta metal |
DE102004020052B4 (de) * | 2004-04-23 | 2008-03-06 | H.C. Starck Gmbh | Verfahren zur Herstellung von Niob- und Tantalpulver |
DE102004049039B4 (de) * | 2004-10-08 | 2009-05-07 | H.C. Starck Gmbh | Verfahren zur Herstellung feinteiliger Ventilmetallpulver |
DE102004049040B4 (de) * | 2004-10-08 | 2008-11-27 | H.C. Starck Gmbh | Verfahren zur Herstellung von Festelektrolytkondensatoren |
JP4914065B2 (ja) | 2005-12-21 | 2012-04-11 | 大研化学工業株式会社 | 積層セラミックコンデンサ電極用ニッケル粉末、電極形成用ペースト及び積層セラミックコンデンサ |
WO2007130483A2 (en) * | 2006-05-05 | 2007-11-15 | Cabot Corporation | Tantalum powder with smooth surface and methods of manufacturing same |
CN100528418C (zh) * | 2008-01-11 | 2009-08-19 | 宁夏东方钽业股份有限公司 | 含氮均匀的阀金属粉末及其制造方法,阀金属坯块和阀金属烧结体以及电解电容器的阳极 |
US20090279233A1 (en) | 2008-05-12 | 2009-11-12 | Yuri Freeman | High volumetric efficiency anodes for electrolytic capacitors |
JP2011210850A (ja) * | 2010-03-29 | 2011-10-20 | Tdk Corp | 希土類焼結磁石の製造方法及び希土類焼結磁石 |
-
2013
- 2013-04-12 DE DE201310206603 patent/DE102013206603A1/de not_active Withdrawn
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2014
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- 2014-04-10 EP EP14757851.2A patent/EP2984194B1/de active Active
- 2014-04-10 WO PCT/EP2014/057244 patent/WO2014167045A2/de active Application Filing
- 2014-04-10 US US14/781,913 patent/US20160064150A1/en not_active Abandoned
- 2014-04-10 MX MX2015014156A patent/MX2015014156A/es unknown
- 2014-04-10 RU RU2015148481A patent/RU2678220C2/ru active
- 2014-04-10 CN CN201480020641.1A patent/CN105339512B/zh not_active Expired - Fee Related
- 2014-04-10 JP JP2016506971A patent/JP6469650B2/ja not_active Expired - Fee Related
-
2015
- 2015-09-01 IL IL240978A patent/IL240978B/en active IP Right Grant
- 2015-10-07 MX MX2021011580A patent/MX2021011580A/es unknown
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-
2016
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6340536B1 (en) * | 1999-02-05 | 2002-01-22 | Commissariat A L'energie Atomique | Zirconium and niobium alloy comprising erbium, preparation method and component containing said alloy |
CN1591721A (zh) * | 2003-08-29 | 2005-03-09 | Nec东金株式会社 | 阀金属粉末和使用该阀金属粉末的固体电解电容器 |
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Publication number | Publication date |
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RU2678220C2 (ru) | 2019-01-24 |
US20160064150A1 (en) | 2016-03-03 |
WO2014167045A3 (de) | 2015-07-16 |
JP2016522318A (ja) | 2016-07-28 |
MX2021011580A (es) | 2021-10-13 |
US20190157011A1 (en) | 2019-05-23 |
TWI630044B (zh) | 2018-07-21 |
KR20150140288A (ko) | 2015-12-15 |
TW201505738A (zh) | 2015-02-16 |
PH12015502340A1 (en) | 2016-02-22 |
EP2984194A2 (de) | 2016-02-17 |
EP2984194B1 (de) | 2022-10-26 |
RU2015148481A3 (zh) | 2018-03-30 |
MX2015014156A (es) | 2015-12-16 |
RU2015148481A (ru) | 2017-05-15 |
WO2014167045A2 (de) | 2014-10-16 |
CN105339512A (zh) | 2016-02-17 |
KR102317632B1 (ko) | 2021-10-26 |
IL240978A0 (en) | 2015-11-30 |
HK1218434A1 (zh) | 2017-02-17 |
IL240978B (en) | 2021-03-25 |
DE102013206603A1 (de) | 2014-10-16 |
PH12015502340B1 (en) | 2016-02-22 |
JP6469650B2 (ja) | 2019-02-13 |
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