CN105316639B - 等离子体处理装置和等离子体处理方法 - Google Patents
等离子体处理装置和等离子体处理方法 Download PDFInfo
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- CN105316639B CN105316639B CN201510455789.4A CN201510455789A CN105316639B CN 105316639 B CN105316639 B CN 105316639B CN 201510455789 A CN201510455789 A CN 201510455789A CN 105316639 B CN105316639 B CN 105316639B
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- 239000007795 chemical reaction product Substances 0.000 claims abstract description 27
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 238000003851 corona treatment Methods 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
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- Chemical & Material Sciences (AREA)
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- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
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| JP6883495B2 (ja) * | 2017-09-04 | 2021-06-09 | 東京エレクトロン株式会社 | エッチング方法 |
| DE102017124682B4 (de) * | 2017-10-23 | 2019-06-27 | RF360 Europe GmbH | Wafer-Träger, Verfahren zum Abtragen von Material von einer Oberseite eines Wafers und Verfahren zum Hinzufügen von Material zu einem Wafer |
| JP7378276B2 (ja) * | 2019-11-12 | 2023-11-13 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP7595431B2 (ja) * | 2020-07-21 | 2024-12-06 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| CN115247257B (zh) * | 2021-04-25 | 2024-01-23 | 广东聚华印刷显示技术有限公司 | 成膜装置及膜层的制备方法 |
| JP2023128046A (ja) | 2022-03-02 | 2023-09-14 | キオクシア株式会社 | 半導体装置およびその製造方法 |
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| US6709553B2 (en) | 2002-05-09 | 2004-03-23 | Applied Materials, Inc. | Multiple-step sputter deposition |
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| JP4497447B2 (ja) | 2003-03-03 | 2010-07-07 | 株式会社アルバック | パルス状直流スパッタ成膜方法及び該方法のための成膜装置 |
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| US7235160B2 (en) * | 2003-08-06 | 2007-06-26 | Energy Photovoltaics, Inc. | Hollow cathode sputtering apparatus and related method |
| JP4646053B2 (ja) * | 2004-09-29 | 2011-03-09 | 株式会社アルバック | 高周波電力用分岐スイッチ及びエッチング装置 |
| JP5323306B2 (ja) * | 2006-07-12 | 2013-10-23 | 東京エレクトロン株式会社 | プラズマエッチング方法およびコンピュータ読取可能な記憶媒体 |
| JP2008028022A (ja) * | 2006-07-19 | 2008-02-07 | Tokyo Electron Ltd | プラズマエッチング方法およびコンピュータ読取可能な記憶媒体 |
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| US8846451B2 (en) * | 2010-07-30 | 2014-09-30 | Applied Materials, Inc. | Methods for depositing metal in high aspect ratio features |
| US8563428B2 (en) | 2010-09-17 | 2013-10-22 | Applied Materials, Inc. | Methods for depositing metal in high aspect ratio features |
| JP5405504B2 (ja) * | 2011-01-31 | 2014-02-05 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| JP6063264B2 (ja) * | 2012-09-13 | 2017-01-18 | 東京エレクトロン株式会社 | 被処理基体を処理する方法、及びプラズマ処理装置 |
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| EP2980829A1 (en) | 2016-02-03 |
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| KR20160014543A (ko) | 2016-02-11 |
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