CN105308208A - Igzo溅射靶和igzo膜 - Google Patents
Igzo溅射靶和igzo膜 Download PDFInfo
- Publication number
- CN105308208A CN105308208A CN201480002040.8A CN201480002040A CN105308208A CN 105308208 A CN105308208 A CN 105308208A CN 201480002040 A CN201480002040 A CN 201480002040A CN 105308208 A CN105308208 A CN 105308208A
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- raw material
- powder
- sputtering
- igzo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5409—Particle size related information expressed by specific surface values
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6583—Oxygen containing atmosphere, e.g. with changing oxygen pressures
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/77—Density
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
- C04B2235/785—Submicron sized grains, i.e. from 0,1 to 1 micron
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
- C04B2235/786—Micrometer sized grains, i.e. from 1 to 100 micron
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013-071170 | 2013-03-29 | ||
JP2013071170 | 2013-03-29 | ||
PCT/JP2014/056250 WO2014156601A1 (ja) | 2013-03-29 | 2014-03-11 | Igzoスパッタリングターゲット及びigzo膜 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN105308208A true CN105308208A (zh) | 2016-02-03 |
Family
ID=51623584
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480002040.8A Pending CN105308208A (zh) | 2013-03-29 | 2014-03-11 | Igzo溅射靶和igzo膜 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5883990B2 (ja) |
KR (2) | KR101973873B1 (ja) |
CN (1) | CN105308208A (ja) |
TW (1) | TWI639722B (ja) |
WO (1) | WO2014156601A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110770191A (zh) * | 2018-04-18 | 2020-02-07 | 三井金属矿业株式会社 | 氧化物烧结体、溅射靶和氧化物薄膜的制造方法 |
CN114752901A (zh) * | 2016-03-31 | 2022-07-15 | 捷客斯金属株式会社 | 氧化铟-氧化锌类(izo)溅射靶及其制造方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101932369B1 (ko) * | 2015-02-27 | 2018-12-24 | 제이엑스금속주식회사 | 산화물 소결체 및 그 산화물 소결체로 이루어지는 스퍼터링 타깃 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011108873A (ja) * | 2009-11-18 | 2011-06-02 | Idemitsu Kosan Co Ltd | In−Ga−Zn系酸化物焼結体スパッタリングターゲット及び薄膜トランジスタ |
CN102105619A (zh) * | 2008-06-06 | 2011-06-22 | 出光兴产株式会社 | 氧化物薄膜用溅射靶及其制造方法 |
CN102131953A (zh) * | 2008-06-27 | 2011-07-20 | 出光兴产株式会社 | 由InGaO3(ZnO)结晶相形成的氧化物半导体用溅射靶材及其制造方法 |
CN102459122A (zh) * | 2009-06-05 | 2012-05-16 | 吉坤日矿日石金属株式会社 | 氧化物烧结体、其制造方法以及氧化物烧结体制造用原料粉末 |
CN102652119A (zh) * | 2010-01-15 | 2012-08-29 | 出光兴产株式会社 | In-Ga-O系氧化物烧结体、靶、氧化物半导体薄膜以及它们的制造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3862385B2 (ja) | 1996-11-08 | 2006-12-27 | Dowaホールディングス株式会社 | 酸化スズ含有酸化インジウム粉及び焼結体の製造方法 |
CA2585071A1 (en) | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Field effect transistor employing an amorphous oxide |
JP4807331B2 (ja) | 2007-06-18 | 2011-11-02 | 住友金属鉱山株式会社 | 酸化インジウム系スパッタリングターゲットの製造方法 |
JP5403390B2 (ja) | 2008-05-16 | 2014-01-29 | 出光興産株式会社 | インジウム、ガリウム及び亜鉛を含む酸化物 |
JP4875135B2 (ja) * | 2009-11-18 | 2012-02-15 | 出光興産株式会社 | In−Ga−Zn−O系スパッタリングターゲット |
JP5591523B2 (ja) * | 2009-11-19 | 2014-09-17 | 出光興産株式会社 | 長期成膜時の安定性に優れたIn−Ga−Zn−O系酸化物焼結体スパッタリングターゲット |
JP5596963B2 (ja) * | 2009-11-19 | 2014-09-24 | 出光興産株式会社 | スパッタリングターゲット及びそれを用いた薄膜トランジスタ |
JP4843083B2 (ja) | 2009-11-19 | 2011-12-21 | 出光興産株式会社 | In−Ga−Zn系酸化物スパッタリングターゲット |
JP2012052227A (ja) * | 2010-08-05 | 2012-03-15 | Mitsubishi Materials Corp | スパッタリングターゲットの製造方法およびスパッタリングターゲット |
JP5767015B2 (ja) * | 2011-05-10 | 2015-08-19 | 出光興産株式会社 | 薄膜トランジスタ |
JP2014062316A (ja) * | 2012-09-03 | 2014-04-10 | Idemitsu Kosan Co Ltd | スパッタリングターゲット |
-
2014
- 2014-03-11 JP JP2015508253A patent/JP5883990B2/ja active Active
- 2014-03-11 KR KR1020177004745A patent/KR101973873B1/ko active IP Right Grant
- 2014-03-11 CN CN201480002040.8A patent/CN105308208A/zh active Pending
- 2014-03-11 WO PCT/JP2014/056250 patent/WO2014156601A1/ja active Application Filing
- 2014-03-11 KR KR1020157001570A patent/KR20150023832A/ko active Application Filing
- 2014-03-18 TW TW103110077A patent/TWI639722B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102105619A (zh) * | 2008-06-06 | 2011-06-22 | 出光兴产株式会社 | 氧化物薄膜用溅射靶及其制造方法 |
CN102131953A (zh) * | 2008-06-27 | 2011-07-20 | 出光兴产株式会社 | 由InGaO3(ZnO)结晶相形成的氧化物半导体用溅射靶材及其制造方法 |
CN102459122A (zh) * | 2009-06-05 | 2012-05-16 | 吉坤日矿日石金属株式会社 | 氧化物烧结体、其制造方法以及氧化物烧结体制造用原料粉末 |
JP2011108873A (ja) * | 2009-11-18 | 2011-06-02 | Idemitsu Kosan Co Ltd | In−Ga−Zn系酸化物焼結体スパッタリングターゲット及び薄膜トランジスタ |
CN102652119A (zh) * | 2010-01-15 | 2012-08-29 | 出光兴产株式会社 | In-Ga-O系氧化物烧结体、靶、氧化物半导体薄膜以及它们的制造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114752901A (zh) * | 2016-03-31 | 2022-07-15 | 捷客斯金属株式会社 | 氧化铟-氧化锌类(izo)溅射靶及其制造方法 |
CN110770191A (zh) * | 2018-04-18 | 2020-02-07 | 三井金属矿业株式会社 | 氧化物烧结体、溅射靶和氧化物薄膜的制造方法 |
CN110770191B (zh) * | 2018-04-18 | 2022-05-13 | 三井金属矿业株式会社 | 氧化物烧结体、溅射靶和氧化物薄膜的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201506182A (zh) | 2015-02-16 |
JP5883990B2 (ja) | 2016-03-15 |
KR20170023201A (ko) | 2017-03-02 |
KR101973873B1 (ko) | 2019-04-29 |
TWI639722B (zh) | 2018-11-01 |
WO2014156601A1 (ja) | 2014-10-02 |
JPWO2014156601A1 (ja) | 2017-02-16 |
KR20150023832A (ko) | 2015-03-05 |
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Address after: Tokyo, Japan Applicant after: JX NIPPON MINING & METALS CORPORATION Address before: Tokyo, Japan Applicant before: JX Nippon Mining & Metals Corporation |
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Application publication date: 20160203 |